JPS59169994A - ダイヤモンド結晶の成長法 - Google Patents
ダイヤモンド結晶の成長法Info
- Publication number
- JPS59169994A JPS59169994A JP58041647A JP4164783A JPS59169994A JP S59169994 A JPS59169994 A JP S59169994A JP 58041647 A JP58041647 A JP 58041647A JP 4164783 A JP4164783 A JP 4164783A JP S59169994 A JPS59169994 A JP S59169994A
- Authority
- JP
- Japan
- Prior art keywords
- diamond
- diamonds
- solvent metal
- seeds
- carbon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010432 diamond Substances 0.000 title claims abstract description 51
- 229910003460 diamond Inorganic materials 0.000 title claims description 37
- 239000013078 crystal Substances 0.000 title claims description 17
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 23
- 239000002904 solvent Substances 0.000 claims abstract description 22
- 239000002245 particle Substances 0.000 claims abstract description 21
- 239000002184 metal Substances 0.000 claims abstract description 20
- 229910052751 metal Inorganic materials 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 20
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 15
- 239000000376 reactant Substances 0.000 claims description 5
- 238000002109 crystal growth method Methods 0.000 claims description 2
- 239000002699 waste material Substances 0.000 claims 1
- 229910002804 graphite Inorganic materials 0.000 abstract description 8
- 239000010439 graphite Substances 0.000 abstract description 8
- 239000002994 raw material Substances 0.000 abstract description 4
- 230000002194 synthesizing effect Effects 0.000 abstract description 4
- 239000000843 powder Substances 0.000 abstract description 3
- 229910052742 iron Inorganic materials 0.000 abstract description 2
- 229910052804 chromium Inorganic materials 0.000 abstract 1
- 239000006185 dispersion Substances 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 229910052715 tantalum Inorganic materials 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000003786 synthesis reaction Methods 0.000 description 7
- 239000000956 alloy Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 241000951471 Citrus junos Species 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 230000002706 hydrostatic effect Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229920003319 Araldite® Polymers 0.000 description 1
- 239000004819 Drying adhesive Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000009760 electrical discharge machining Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000002648 laminated material Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B9/00—Single-crystal growth from melt solutions using molten solvents
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58041647A JPS59169994A (ja) | 1983-03-14 | 1983-03-14 | ダイヤモンド結晶の成長法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58041647A JPS59169994A (ja) | 1983-03-14 | 1983-03-14 | ダイヤモンド結晶の成長法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59169994A true JPS59169994A (ja) | 1984-09-26 |
| JPH0360797B2 JPH0360797B2 (enrdf_load_stackoverflow) | 1991-09-17 |
Family
ID=12614134
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58041647A Granted JPS59169994A (ja) | 1983-03-14 | 1983-03-14 | ダイヤモンド結晶の成長法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59169994A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6328438A (ja) * | 1986-07-17 | 1988-02-06 | Tatsuro Kuratomi | ダイアモンド粉末の製造法 |
| JPH0523574A (ja) * | 1991-07-22 | 1993-02-02 | Sumitomo Electric Ind Ltd | ダイヤモンド砥粒の合成方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3297407A (en) * | 1962-12-10 | 1967-01-10 | Gen Electric | Method of growing diamond on a diamond seed crystal |
| US3423177A (en) * | 1966-12-27 | 1969-01-21 | Gen Electric | Process for growing diamond on a diamond seed crystal |
| JPS5288289A (en) * | 1976-01-16 | 1977-07-23 | Gen Electric | Method and apparatus for making diamonds |
| JPS5354194A (en) * | 1976-10-27 | 1978-05-17 | Ishizuka Kenkyusho | Synthesis of diamond and reaction vessels therefor |
| JPS56100122A (en) * | 1980-01-14 | 1981-08-11 | Sumitomo Electric Ind Ltd | Diamond synthesizing method |
-
1983
- 1983-03-14 JP JP58041647A patent/JPS59169994A/ja active Granted
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3297407A (en) * | 1962-12-10 | 1967-01-10 | Gen Electric | Method of growing diamond on a diamond seed crystal |
| US3423177A (en) * | 1966-12-27 | 1969-01-21 | Gen Electric | Process for growing diamond on a diamond seed crystal |
| JPS5288289A (en) * | 1976-01-16 | 1977-07-23 | Gen Electric | Method and apparatus for making diamonds |
| JPS5354194A (en) * | 1976-10-27 | 1978-05-17 | Ishizuka Kenkyusho | Synthesis of diamond and reaction vessels therefor |
| JPS56100122A (en) * | 1980-01-14 | 1981-08-11 | Sumitomo Electric Ind Ltd | Diamond synthesizing method |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6328438A (ja) * | 1986-07-17 | 1988-02-06 | Tatsuro Kuratomi | ダイアモンド粉末の製造法 |
| JPH0523574A (ja) * | 1991-07-22 | 1993-02-02 | Sumitomo Electric Ind Ltd | ダイヤモンド砥粒の合成方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0360797B2 (enrdf_load_stackoverflow) | 1991-09-17 |
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