JPS59168680A - 光起電力装置の製造方法 - Google Patents

光起電力装置の製造方法

Info

Publication number
JPS59168680A
JPS59168680A JP58042641A JP4264183A JPS59168680A JP S59168680 A JPS59168680 A JP S59168680A JP 58042641 A JP58042641 A JP 58042641A JP 4264183 A JP4264183 A JP 4264183A JP S59168680 A JPS59168680 A JP S59168680A
Authority
JP
Japan
Prior art keywords
film
electrode film
photosemiconductor
photoelectric conversion
irradiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58042641A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0445990B2 (enrdf_load_stackoverflow
Inventor
Toshiaki Yokoo
横尾　敏昭
Takashi Shibuya
澁谷　尚
Masaru Takeuchi
勝 武内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd, Sanyo Denki Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP58042641A priority Critical patent/JPS59168680A/ja
Publication of JPS59168680A publication Critical patent/JPS59168680A/ja
Publication of JPH0445990B2 publication Critical patent/JPH0445990B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)
JP58042641A 1983-03-14 1983-03-14 光起電力装置の製造方法 Granted JPS59168680A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58042641A JPS59168680A (ja) 1983-03-14 1983-03-14 光起電力装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58042641A JPS59168680A (ja) 1983-03-14 1983-03-14 光起電力装置の製造方法

Publications (2)

Publication Number Publication Date
JPS59168680A true JPS59168680A (ja) 1984-09-22
JPH0445990B2 JPH0445990B2 (enrdf_load_stackoverflow) 1992-07-28

Family

ID=12641635

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58042641A Granted JPS59168680A (ja) 1983-03-14 1983-03-14 光起電力装置の製造方法

Country Status (1)

Country Link
JP (1) JPS59168680A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61198685A (ja) * 1985-02-27 1986-09-03 Kanegafuchi Chem Ind Co Ltd 半導体装置の製法
JP2009158861A (ja) * 2007-12-27 2009-07-16 Sanyo Electric Co Ltd 太陽電池モジュール及び太陽電池モジュールの製造方法
WO2010064549A1 (ja) * 2008-12-04 2010-06-10 三菱電機株式会社 薄膜光電変換装置の製造方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61198685A (ja) * 1985-02-27 1986-09-03 Kanegafuchi Chem Ind Co Ltd 半導体装置の製法
JP2009158861A (ja) * 2007-12-27 2009-07-16 Sanyo Electric Co Ltd 太陽電池モジュール及び太陽電池モジュールの製造方法
WO2010064549A1 (ja) * 2008-12-04 2010-06-10 三菱電機株式会社 薄膜光電変換装置の製造方法
CN102239571A (zh) * 2008-12-04 2011-11-09 三菱电机株式会社 薄膜光电变换装置的制造方法
JPWO2010064549A1 (ja) * 2008-12-04 2012-05-10 三菱電機株式会社 薄膜光電変換装置の製造方法
US8507310B2 (en) 2008-12-04 2013-08-13 Mitsubishi Electric Corporation Method for manufacturing thin-film photoelectric conversion device

Also Published As

Publication number Publication date
JPH0445990B2 (enrdf_load_stackoverflow) 1992-07-28

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