JPS59168680A - 光起電力装置の製造方法 - Google Patents
光起電力装置の製造方法Info
- Publication number
- JPS59168680A JPS59168680A JP58042641A JP4264183A JPS59168680A JP S59168680 A JPS59168680 A JP S59168680A JP 58042641 A JP58042641 A JP 58042641A JP 4264183 A JP4264183 A JP 4264183A JP S59168680 A JPS59168680 A JP S59168680A
- Authority
- JP
- Japan
- Prior art keywords
- film
- electrode film
- photosemiconductor
- photoelectric conversion
- irradiation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 238000006243 chemical reaction Methods 0.000 claims abstract description 26
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 239000004065 semiconductor Substances 0.000 claims description 26
- 230000003287 optical effect Effects 0.000 claims description 22
- 238000005121 nitriding Methods 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 238000000926 separation method Methods 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims 1
- 229910001873 dinitrogen Inorganic materials 0.000 abstract description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract description 3
- 239000011521 glass Substances 0.000 abstract description 2
- 150000003377 silicon compounds Chemical class 0.000 abstract description 2
- 238000002955 isolation Methods 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 240000002834 Paulownia tomentosa Species 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Engineering & Computer Science (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58042641A JPS59168680A (ja) | 1983-03-14 | 1983-03-14 | 光起電力装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58042641A JPS59168680A (ja) | 1983-03-14 | 1983-03-14 | 光起電力装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59168680A true JPS59168680A (ja) | 1984-09-22 |
| JPH0445990B2 JPH0445990B2 (de) | 1992-07-28 |
Family
ID=12641635
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58042641A Granted JPS59168680A (ja) | 1983-03-14 | 1983-03-14 | 光起電力装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59168680A (de) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61198685A (ja) * | 1985-02-27 | 1986-09-03 | Kanegafuchi Chem Ind Co Ltd | 半導体装置の製法 |
| JP2009158861A (ja) * | 2007-12-27 | 2009-07-16 | Sanyo Electric Co Ltd | 太陽電池モジュール及び太陽電池モジュールの製造方法 |
| WO2010064549A1 (ja) * | 2008-12-04 | 2010-06-10 | 三菱電機株式会社 | 薄膜光電変換装置の製造方法 |
-
1983
- 1983-03-14 JP JP58042641A patent/JPS59168680A/ja active Granted
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61198685A (ja) * | 1985-02-27 | 1986-09-03 | Kanegafuchi Chem Ind Co Ltd | 半導体装置の製法 |
| JPH0550871B2 (de) * | 1985-02-27 | 1993-07-30 | Kanegafuchi Chemical Ind | |
| JP2009158861A (ja) * | 2007-12-27 | 2009-07-16 | Sanyo Electric Co Ltd | 太陽電池モジュール及び太陽電池モジュールの製造方法 |
| WO2010064549A1 (ja) * | 2008-12-04 | 2010-06-10 | 三菱電機株式会社 | 薄膜光電変換装置の製造方法 |
| CN102239571A (zh) * | 2008-12-04 | 2011-11-09 | 三菱电机株式会社 | 薄膜光电变换装置的制造方法 |
| JPWO2010064549A1 (ja) * | 2008-12-04 | 2012-05-10 | 三菱電機株式会社 | 薄膜光電変換装置の製造方法 |
| US8507310B2 (en) | 2008-12-04 | 2013-08-13 | Mitsubishi Electric Corporation | Method for manufacturing thin-film photoelectric conversion device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0445990B2 (de) | 1992-07-28 |
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