JPS59167059A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS59167059A
JPS59167059A JP58040900A JP4090083A JPS59167059A JP S59167059 A JPS59167059 A JP S59167059A JP 58040900 A JP58040900 A JP 58040900A JP 4090083 A JP4090083 A JP 4090083A JP S59167059 A JPS59167059 A JP S59167059A
Authority
JP
Japan
Prior art keywords
film
type
region
wiring layer
adhered
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58040900A
Other languages
English (en)
Japanese (ja)
Other versions
JPH056342B2 (enrdf_load_stackoverflow
Inventor
Takahiro Tsuchitani
槌谷 孝裕
Kiyoshi Watabe
渡部 潔
Toshio Kurahashi
倉橋 敏男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP58040900A priority Critical patent/JPS59167059A/ja
Publication of JPS59167059A publication Critical patent/JPS59167059A/ja
Publication of JPH056342B2 publication Critical patent/JPH056342B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/60Electrodes characterised by their materials
    • H10D64/62Electrodes ohmically coupled to a semiconductor

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP58040900A 1983-03-11 1983-03-11 半導体装置の製造方法 Granted JPS59167059A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58040900A JPS59167059A (ja) 1983-03-11 1983-03-11 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58040900A JPS59167059A (ja) 1983-03-11 1983-03-11 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS59167059A true JPS59167059A (ja) 1984-09-20
JPH056342B2 JPH056342B2 (enrdf_load_stackoverflow) 1993-01-26

Family

ID=12593384

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58040900A Granted JPS59167059A (ja) 1983-03-11 1983-03-11 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS59167059A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61256654A (ja) * 1985-05-09 1986-11-14 Nec Corp 多層配線の形成方法
US4920071A (en) * 1985-03-15 1990-04-24 Fairchild Camera And Instrument Corporation High temperature interconnect system for an integrated circuit
US5535843A (en) * 1993-12-20 1996-07-16 Nippondenso Co., Ltd. Traveling carriage

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57133683A (en) * 1981-02-12 1982-08-18 Nec Corp Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57133683A (en) * 1981-02-12 1982-08-18 Nec Corp Semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4920071A (en) * 1985-03-15 1990-04-24 Fairchild Camera And Instrument Corporation High temperature interconnect system for an integrated circuit
US5414301A (en) * 1985-03-15 1995-05-09 National Semiconductor Corporation High temperature interconnect system for an integrated circuit
JPS61256654A (ja) * 1985-05-09 1986-11-14 Nec Corp 多層配線の形成方法
US5535843A (en) * 1993-12-20 1996-07-16 Nippondenso Co., Ltd. Traveling carriage

Also Published As

Publication number Publication date
JPH056342B2 (enrdf_load_stackoverflow) 1993-01-26

Similar Documents

Publication Publication Date Title
KR930005949B1 (ko) 반도체 디바이스 제조공정
JPS5815250A (ja) 半導体装置の製造方法
US5055906A (en) Semiconductor device having a composite insulating interlayer
US4172758A (en) Magnetic bubble domain device fabrication technique
JP2622156B2 (ja) 集積回路パッド用の接触方法とその構造
KR960001595B1 (ko) 전도층 연결을 위한 단차 영역에서의 제조방법
JPS59167059A (ja) 半導体装置の製造方法
JPS6271256A (ja) 化合物半導体集積回路
JPH05267290A (ja) 半導体集積回路およびその製造方法
JPH05234991A (ja) 半導体装置
JP2803940B2 (ja) 半導体装置
JPH02140955A (ja) 半導体装置
JP2643004B2 (ja) ハイブリッドic基板
JPH01268150A (ja) 半導体装置
JPS58110055A (ja) 半導体装置
KR100265990B1 (ko) 반도체장치의 금속배선 형성방법
JPH0982799A (ja) 配線基板およびその製造方法
JPS63299143A (ja) 半導体集積回路装置およびその製造方法
JPS6154645A (ja) 半導体装置
JPS6149439A (ja) 半導体装置の製造方法
JPS5815253A (ja) 半導体装置の電極製造方法
JPH04250628A (ja) 半導体装置の製造方法
JPS60180143A (ja) 半導体装置
JPS6256663B2 (enrdf_load_stackoverflow)
JPS63147345A (ja) 半導体集積回路装置及びその製造方法