JPS59157282A - 高シリコンニクロム系スパツタリング用タ−ゲツト - Google Patents

高シリコンニクロム系スパツタリング用タ−ゲツト

Info

Publication number
JPS59157282A
JPS59157282A JP58028569A JP2856983A JPS59157282A JP S59157282 A JPS59157282 A JP S59157282A JP 58028569 A JP58028569 A JP 58028569A JP 2856983 A JP2856983 A JP 2856983A JP S59157282 A JPS59157282 A JP S59157282A
Authority
JP
Japan
Prior art keywords
target
resistance
alloy
temp
sputtering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58028569A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0323630B2 (enrdf_load_html_response
Inventor
Yuji Kawahara
河原　祐路
Masuo Ueda
植田　益夫
Masaru Kawakami
勝 川上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tosoh Corp
Original Assignee
Toyo Soda Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyo Soda Manufacturing Co Ltd filed Critical Toyo Soda Manufacturing Co Ltd
Priority to JP58028569A priority Critical patent/JPS59157282A/ja
Publication of JPS59157282A publication Critical patent/JPS59157282A/ja
Publication of JPH0323630B2 publication Critical patent/JPH0323630B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
JP58028569A 1983-02-24 1983-02-24 高シリコンニクロム系スパツタリング用タ−ゲツト Granted JPS59157282A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58028569A JPS59157282A (ja) 1983-02-24 1983-02-24 高シリコンニクロム系スパツタリング用タ−ゲツト

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58028569A JPS59157282A (ja) 1983-02-24 1983-02-24 高シリコンニクロム系スパツタリング用タ−ゲツト

Publications (2)

Publication Number Publication Date
JPS59157282A true JPS59157282A (ja) 1984-09-06
JPH0323630B2 JPH0323630B2 (enrdf_load_html_response) 1991-03-29

Family

ID=12252251

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58028569A Granted JPS59157282A (ja) 1983-02-24 1983-02-24 高シリコンニクロム系スパツタリング用タ−ゲツト

Country Status (1)

Country Link
JP (1) JPS59157282A (enrdf_load_html_response)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5718778A (en) * 1995-03-31 1998-02-17 Hitachi Metals, Ltd. Chromium target and process for producing the same
US6365014B2 (en) * 1991-11-29 2002-04-02 Ppg Industries Ohio, Inc. Cathode targets of silicon and transition metal
US6793781B2 (en) 1991-11-29 2004-09-21 Ppg Industries Ohio, Inc. Cathode targets of silicon and transition metal
CN114015921A (zh) * 2021-11-04 2022-02-08 温州市铜仁新材料研究院 高阻电阻磁控溅射靶材及其制备方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5822379A (ja) * 1981-07-30 1983-02-09 Tama Denki Kogyo Kk スパツタリング用タ−ゲツト

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5822379A (ja) * 1981-07-30 1983-02-09 Tama Denki Kogyo Kk スパツタリング用タ−ゲツト

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6365014B2 (en) * 1991-11-29 2002-04-02 Ppg Industries Ohio, Inc. Cathode targets of silicon and transition metal
US6793781B2 (en) 1991-11-29 2004-09-21 Ppg Industries Ohio, Inc. Cathode targets of silicon and transition metal
US5718778A (en) * 1995-03-31 1998-02-17 Hitachi Metals, Ltd. Chromium target and process for producing the same
CN114015921A (zh) * 2021-11-04 2022-02-08 温州市铜仁新材料研究院 高阻电阻磁控溅射靶材及其制备方法

Also Published As

Publication number Publication date
JPH0323630B2 (enrdf_load_html_response) 1991-03-29

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