JPS59155935A - プラズマを用いたパタ−ン形成法 - Google Patents

プラズマを用いたパタ−ン形成法

Info

Publication number
JPS59155935A
JPS59155935A JP3051683A JP3051683A JPS59155935A JP S59155935 A JPS59155935 A JP S59155935A JP 3051683 A JP3051683 A JP 3051683A JP 3051683 A JP3051683 A JP 3051683A JP S59155935 A JPS59155935 A JP S59155935A
Authority
JP
Japan
Prior art keywords
plasma
pattern
substrate
light
reaction chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3051683A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0526329B2 (enExample
Inventor
Yoshio Komiya
小宮　祥男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP3051683A priority Critical patent/JPS59155935A/ja
Publication of JPS59155935A publication Critical patent/JPS59155935A/ja
Publication of JPH0526329B2 publication Critical patent/JPH0526329B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
JP3051683A 1983-02-25 1983-02-25 プラズマを用いたパタ−ン形成法 Granted JPS59155935A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3051683A JPS59155935A (ja) 1983-02-25 1983-02-25 プラズマを用いたパタ−ン形成法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3051683A JPS59155935A (ja) 1983-02-25 1983-02-25 プラズマを用いたパタ−ン形成法

Publications (2)

Publication Number Publication Date
JPS59155935A true JPS59155935A (ja) 1984-09-05
JPH0526329B2 JPH0526329B2 (enExample) 1993-04-15

Family

ID=12305969

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3051683A Granted JPS59155935A (ja) 1983-02-25 1983-02-25 プラズマを用いたパタ−ン形成法

Country Status (1)

Country Link
JP (1) JPS59155935A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61174639A (ja) * 1985-01-28 1986-08-06 Semiconductor Energy Lab Co Ltd 光エツチング方法
JPS6298731A (ja) * 1985-10-25 1987-05-08 Hitachi Ltd 表面処理方法およびその装置
JPH03163825A (ja) * 1989-08-02 1991-07-15 Nec Corp エッチング方法およびエッチング装置
JP2016514364A (ja) * 2013-02-26 2016-05-19 ソイテックＳｏｉｔｅｃ 構造を処理するためのプロセス

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50130370A (enExample) * 1974-04-01 1975-10-15
JPS55113329A (en) * 1979-02-23 1980-09-01 Chiyou Lsi Gijutsu Kenkyu Kumiai Light dry etching
JPS57181119A (en) * 1981-05-01 1982-11-08 Agency Of Ind Science & Technol Forming method for pattern

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50130370A (enExample) * 1974-04-01 1975-10-15
JPS55113329A (en) * 1979-02-23 1980-09-01 Chiyou Lsi Gijutsu Kenkyu Kumiai Light dry etching
JPS57181119A (en) * 1981-05-01 1982-11-08 Agency Of Ind Science & Technol Forming method for pattern

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61174639A (ja) * 1985-01-28 1986-08-06 Semiconductor Energy Lab Co Ltd 光エツチング方法
JPS6298731A (ja) * 1985-10-25 1987-05-08 Hitachi Ltd 表面処理方法およびその装置
JPH03163825A (ja) * 1989-08-02 1991-07-15 Nec Corp エッチング方法およびエッチング装置
JP2016514364A (ja) * 2013-02-26 2016-05-19 ソイテックＳｏｉｔｅｃ 構造を処理するためのプロセス

Also Published As

Publication number Publication date
JPH0526329B2 (enExample) 1993-04-15

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