JPS57181119A - Forming method for pattern - Google Patents

Forming method for pattern

Info

Publication number
JPS57181119A
JPS57181119A JP6624381A JP6624381A JPS57181119A JP S57181119 A JPS57181119 A JP S57181119A JP 6624381 A JP6624381 A JP 6624381A JP 6624381 A JP6624381 A JP 6624381A JP S57181119 A JPS57181119 A JP S57181119A
Authority
JP
Japan
Prior art keywords
film
pattern
alpha3
poly
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6624381A
Other languages
Japanese (ja)
Inventor
Yoshio Komiya
Tetsuo Takahashi
Suminori Sakamoto
Hitoshi Kawanami
Michimasa Koyanagi
Yasuo Tarui
Koichiro Ootori
Koichi Murakami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP6624381A priority Critical patent/JPS57181119A/en
Publication of JPS57181119A publication Critical patent/JPS57181119A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To form a substance changing section corresponding to a desired pattern on a substrate by making energy beam itself possess necessary pattern information or pattern distribution. CONSTITUTION:An insulating film alpha2 made of SiO2 is shaped onto the Si substrate alpha1, and an amorphous Si film alpha3 is further deposited. Partial pulse laser annealing is conducted to the film 3. That is, the film alpha3 is changed into poly Si as a substance change through a melting reaction by giving energy beam itself the pattern information and irradiating the film alpha3, and a poly Si pattern is formed. An island alpha4 mde of poly Si is shaped according to the difference of the speed of etching through dry etching. Consequently, a process can be turned in a resistless dry process.
JP6624381A 1981-05-01 1981-05-01 Forming method for pattern Pending JPS57181119A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6624381A JPS57181119A (en) 1981-05-01 1981-05-01 Forming method for pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6624381A JPS57181119A (en) 1981-05-01 1981-05-01 Forming method for pattern

Publications (1)

Publication Number Publication Date
JPS57181119A true JPS57181119A (en) 1982-11-08

Family

ID=13310223

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6624381A Pending JPS57181119A (en) 1981-05-01 1981-05-01 Forming method for pattern

Country Status (1)

Country Link
JP (1) JPS57181119A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59155935A (en) * 1983-02-25 1984-09-05 Agency Of Ind Science & Technol Forming method of pattern by using plasma
JPS59165422A (en) * 1983-03-10 1984-09-18 Agency Of Ind Science & Technol Dry process apparatus
JPS60101932A (en) * 1983-11-08 1985-06-06 Agency Of Ind Science & Technol Formation of pattern
JPS60216555A (en) * 1984-04-12 1985-10-30 Fuji Electric Corp Res & Dev Ltd Manufacture of semiconductor device
JPH01259530A (en) * 1988-04-11 1989-10-17 Tokyo Electron Ltd Processing apparatus
JPH01274432A (en) * 1988-04-27 1989-11-02 Nec Corp Film forming method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53132270A (en) * 1977-04-20 1978-11-17 Thomson Csf Optical device for projecting pattern
JPS54131866A (en) * 1978-04-05 1979-10-13 Nippon Telegr & Teleph Corp <Ntt> Heat treatment device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53132270A (en) * 1977-04-20 1978-11-17 Thomson Csf Optical device for projecting pattern
JPS54131866A (en) * 1978-04-05 1979-10-13 Nippon Telegr & Teleph Corp <Ntt> Heat treatment device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59155935A (en) * 1983-02-25 1984-09-05 Agency Of Ind Science & Technol Forming method of pattern by using plasma
JPH0526329B2 (en) * 1983-02-25 1993-04-15 Kogyo Gijutsuin
JPS59165422A (en) * 1983-03-10 1984-09-18 Agency Of Ind Science & Technol Dry process apparatus
JPS60101932A (en) * 1983-11-08 1985-06-06 Agency Of Ind Science & Technol Formation of pattern
JPS60216555A (en) * 1984-04-12 1985-10-30 Fuji Electric Corp Res & Dev Ltd Manufacture of semiconductor device
JPH01259530A (en) * 1988-04-11 1989-10-17 Tokyo Electron Ltd Processing apparatus
JPH01274432A (en) * 1988-04-27 1989-11-02 Nec Corp Film forming method

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