JPS59155931A - Forming method of minute pattern - Google Patents

Forming method of minute pattern

Info

Publication number
JPS59155931A
JPS59155931A JP58031214A JP3121483A JPS59155931A JP S59155931 A JPS59155931 A JP S59155931A JP 58031214 A JP58031214 A JP 58031214A JP 3121483 A JP3121483 A JP 3121483A JP S59155931 A JPS59155931 A JP S59155931A
Authority
JP
Japan
Prior art keywords
photosensitive material
exposure
substrate
masks
patterns
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58031214A
Other languages
Japanese (ja)
Inventor
Masayuki Nakajima
真之 中島
Kuniaki Miyake
邦明 三宅
Hirotomo Ooga
大賀　弘朝
Kenji Takayama
健司 高山
Hideaki Itakura
秀明 板倉
Masahiro Hatanaka
畑中　正宏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP58031214A priority Critical patent/JPS59155931A/en
Publication of JPS59155931A publication Critical patent/JPS59155931A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To obtain a minute pattern of high accuracy even in a substrate having a stepped difference by preparing a plurality of masks in one process in exposure processes and using predetermined masks in response to the film thickness of a photosensitive material applied while changing the quantity of exposure. CONSTITUTION:When minute patterns are formed to a substrate 1 with a stepped difference, a photosensitive material 2 is applied on one surface of the substrate 1, and exposed and developed, and the substrate 1 is etched to obtain the desired patterns. However, there are a thick section and a thin section in the photosensitive material 2 applied, and the desired patterns are not acquired. Consequently, a plurality of masks of different thickness are prepared in exposure processes, and the masks are used selectively in response to the thickness of the photosensitive material 2 while the quantity of exposure to the photosensitive material 2 is also adjusted. Accordingly, the desired minute patterns are acquired after development.

Description

【発明の詳細な説明】 〔発明の技術分野〕 この発明は半導体集積回路装置の製造工程等における微
細パターンの形成方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a method for forming fine patterns in the manufacturing process of semiconductor integrated circuit devices.

〔従来技術〕[Prior art]

一般に、第１図に示すように、段差のある基板（１）上
に、例えばポジタイプの感光材料（２）を塗布し、パタ
ーンを形成する場合、塗布される感光材料（２）の膜厚
に差が生じ、段差上では平面上に比べて厚くなる。そし
て、このように感光材料（２）が塗布された段差のある
基板（１）全露光する場合、従来は１工程に対して１枚
のマスクを用い、どの部分の感光材料も同じ露光条件で
露光していた。このため、段差の上下の露光領域（３）
の露光量は感光材料（２）が厚い個所と薄い個所にかか
わらず一定であることから、膜厚の薄い部分では現像オ
ーバになる。このため、第２図に示すように、現像後に
精度の良いパターンが得られない欠点があった。Generally, as shown in Fig. 1, when applying, for example, a positive type photosensitive material (2) on a substrate (1) with steps to form a pattern, the film thickness of the applied photosensitive material (2) will vary. A difference occurs, and it becomes thicker on a step than on a flat surface. When exposing the entire substrate (1) coated with the photosensitive material (2) with steps as described above, conventionally one mask was used for each step, and all parts of the photosensitive material were exposed under the same exposure conditions. It was exposed. For this reason, the exposure area (3) above and below the step
Since the exposure amount is constant regardless of whether the photosensitive material (2) is thick or thin, overdevelopment occurs in thin film thickness areas. For this reason, as shown in FIG. 2, there was a drawback that a highly accurate pattern could not be obtained after development.

〔発明の概要〕[Summary of the invention]

したがって、この発明の目的は段差のある基板上にバタ
ー／を精度よく形成することができる微細パターン形成
方法全提供するものである。Therefore, an object of the present invention is to provide an entire method for forming a fine pattern by which butter/patterns can be formed with high accuracy on a substrate having steps.

このような目的を達成するため、この発明は露光工程に
おける１工程で複数枚のマスクを用い、途布された感光
材料の膜厚に応じて所定のマスクを用いると共に、それ
ぞれのマスクに対して露光量を変えるものであり、以下
実施例を用いて詳細に説明する。In order to achieve such an object, the present invention uses a plurality of masks in one step of the exposure process, uses a predetermined mask depending on the film thickness of the discarded photosensitive material, and This method changes the exposure amount, and will be explained in detail below using examples.

〔発明の実施例〕[Embodiments of the invention]

第３図はこの発明に係る徽細パターン形成方法の一実施
例によって形成した現像後のパターン形状を示す断面図
である。FIG. 3 is a sectional view showing a pattern shape after development formed by an embodiment of the fine pattern forming method according to the present invention.

次に、この発明に係る微細パターンの形成方法について
説明する。まず、レジスト露光工程において、その１工
程で、複数枚のマスクを用い、それぞれの膜厚に応じた
露光条件で露光を行なう。Next, a method for forming a fine pattern according to the present invention will be explained. First, in a resist exposure step, exposure is performed using a plurality of masks under exposure conditions depending on the film thickness of each mask.

このため、感光材料（２）が厚い個所あるいは薄い個所
に対して、それぞれ適量で露光される。したがって、現
像後では第３図に示すように、精度のよいパターンを得
ることができる。Therefore, thick or thin portions of the photosensitive material (2) are exposed to appropriate amounts of light. Therefore, after development, a highly accurate pattern can be obtained as shown in FIG.

なお、上述の笑施例ではポジタイプの感光材料および光
による露光を例にして説明したが、ネガタイプの感光材
料およびＥＢ露光またはイオンビーム露光、Ｘ線露光に
ついても同様にできることはもちろんである。Although the above-mentioned embodiments have been described using a positive type photosensitive material and light exposure as an example, it goes without saying that the same can be applied to a negative type photosensitive material and EB exposure, ion beam exposure, or X-ray exposure.

〔発明の効果〕〔Effect of the invention〕

以上詳細に説明したように、この発明に係る微細パター
ン形成方法によれば現像後に、精度のよい微細パターン
を得ることができる効果がある。As described above in detail, the method for forming a fine pattern according to the present invention has the effect of being able to obtain a fine pattern with high precision after development.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は感光材料が塗布された段差のある基板の露光段
階の状態を示す断面図、第２図は従来の微細パターン形
成方法によって形成した現像後のパターン形状を示す断
面図、第３図はこの発明に係る微細パターン形成方法に
よって形成した現像後のパターン形状を示す断面図であ
る。 （１）・・・・基板、（２）・・・・感光材料、（３）
・・・・露光領域。 なお、図中、同一符号は同一または和尚部分を示す。 代理人　　葛野信−Fig. 1 is a cross-sectional view showing the state of a substrate with steps coated with a photosensitive material at the exposure stage, Fig. 2 is a cross-sectional view showing the pattern shape after development formed by a conventional fine pattern forming method, and Fig. 3 FIG. 2 is a cross-sectional view showing the pattern shape after development formed by the fine pattern forming method according to the present invention. (1)...Substrate, (2)...Photosensitive material, (3)
...Exposure area. In addition, in the figures, the same reference numerals indicate the same or similar parts. Agent Makoto Kuzuno

Claims (1)

【特許請求の範囲】[Claims] 露光工程における１工程で複数枚のマスクを用い、塗布
された感光材料の膜厚に応じて所定のマスクを用いると
共に、それぞれのマスクに対して露光量を変えることを
特徴とする微細パターン形成方法。A fine pattern forming method characterized in that a plurality of masks are used in one step of the exposure process, a predetermined mask is used depending on the film thickness of the applied photosensitive material, and the exposure amount is changed for each mask. .
JP58031214A 1983-02-25 1983-02-25 Forming method of minute pattern Pending JPS59155931A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58031214A JPS59155931A (en) 1983-02-25 1983-02-25 Forming method of minute pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58031214A JPS59155931A (en) 1983-02-25 1983-02-25 Forming method of minute pattern

Publications (1)

Publication Number Publication Date
JPS59155931A true JPS59155931A (en) 1984-09-05

Family

ID=12325178

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58031214A Pending JPS59155931A (en) 1983-02-25 1983-02-25 Forming method of minute pattern

Country Status (1)

Country Link
JP (1) JPS59155931A (en)

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