JPS59155185A - 半導体レ−ザ素子 - Google Patents

半導体レ−ザ素子

Info

Publication number
JPS59155185A
JPS59155185A JP2899783A JP2899783A JPS59155185A JP S59155185 A JPS59155185 A JP S59155185A JP 2899783 A JP2899783 A JP 2899783A JP 2899783 A JP2899783 A JP 2899783A JP S59155185 A JPS59155185 A JP S59155185A
Authority
JP
Japan
Prior art keywords
layer
active layer
buried
type inp
semiconductor laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2899783A
Other languages
English (en)
Japanese (ja)
Other versions
JPS644672B2 (enrdf_load_stackoverflow
Inventor
Haruo Nagai
治男 永井
Etsuo Noguchi
野口　悦男
Yoshinori Nakano
中野　好典
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP2899783A priority Critical patent/JPS59155185A/ja
Publication of JPS59155185A publication Critical patent/JPS59155185A/ja
Publication of JPS644672B2 publication Critical patent/JPS644672B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2237—Buried stripe structure with a non-planar active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser

Landscapes

  • Semiconductor Lasers (AREA)
JP2899783A 1983-02-23 1983-02-23 半導体レ−ザ素子 Granted JPS59155185A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2899783A JPS59155185A (ja) 1983-02-23 1983-02-23 半導体レ−ザ素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2899783A JPS59155185A (ja) 1983-02-23 1983-02-23 半導体レ−ザ素子

Publications (2)

Publication Number Publication Date
JPS59155185A true JPS59155185A (ja) 1984-09-04
JPS644672B2 JPS644672B2 (enrdf_load_stackoverflow) 1989-01-26

Family

ID=12264048

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2899783A Granted JPS59155185A (ja) 1983-02-23 1983-02-23 半導体レ−ザ素子

Country Status (1)

Country Link
JP (1) JPS59155185A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS644672B2 (enrdf_load_stackoverflow) 1989-01-26

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