JPS59154800A - プラズマ発生用高周波発振器 - Google Patents
プラズマ発生用高周波発振器Info
- Publication number
- JPS59154800A JPS59154800A JP58028196A JP2819683A JPS59154800A JP S59154800 A JPS59154800 A JP S59154800A JP 58028196 A JP58028196 A JP 58028196A JP 2819683 A JP2819683 A JP 2819683A JP S59154800 A JPS59154800 A JP S59154800A
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- circuit
- output
- oscillator
- high frequency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000010355 oscillation Effects 0.000 claims description 14
- 230000003321 amplification Effects 0.000 claims description 3
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 3
- 239000003990 capacitor Substances 0.000 description 21
- 239000000463 material Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
Landscapes
- Plasma Technology (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58028196A JPS59154800A (ja) | 1983-02-22 | 1983-02-22 | プラズマ発生用高周波発振器 |
| US06/580,853 US4577165A (en) | 1983-02-22 | 1984-02-16 | High-frequency oscillator with power amplifier and automatic power control |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58028196A JPS59154800A (ja) | 1983-02-22 | 1983-02-22 | プラズマ発生用高周波発振器 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59154800A true JPS59154800A (ja) | 1984-09-03 |
| JPH0534800B2 JPH0534800B2 (enExample) | 1993-05-24 |
Family
ID=12241915
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58028196A Granted JPS59154800A (ja) | 1983-02-22 | 1983-02-22 | プラズマ発生用高周波発振器 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59154800A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0235722A (ja) * | 1988-07-26 | 1990-02-06 | Matsushita Electric Ind Co Ltd | 反応性イオンエッチング装置 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5798678A (en) * | 1980-12-11 | 1982-06-18 | Toshiba Corp | Method and device for dry etching |
| JPS5864030A (ja) * | 1981-10-13 | 1983-04-16 | Nec Kyushu Ltd | プラズマエツチング装置 |
| JPS58163435A (ja) * | 1982-03-25 | 1983-09-28 | Semiconductor Energy Lab Co Ltd | プラズマ反応用装置 |
-
1983
- 1983-02-22 JP JP58028196A patent/JPS59154800A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5798678A (en) * | 1980-12-11 | 1982-06-18 | Toshiba Corp | Method and device for dry etching |
| JPS5864030A (ja) * | 1981-10-13 | 1983-04-16 | Nec Kyushu Ltd | プラズマエツチング装置 |
| JPS58163435A (ja) * | 1982-03-25 | 1983-09-28 | Semiconductor Energy Lab Co Ltd | プラズマ反応用装置 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0235722A (ja) * | 1988-07-26 | 1990-02-06 | Matsushita Electric Ind Co Ltd | 反応性イオンエッチング装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0534800B2 (enExample) | 1993-05-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4577165A (en) | High-frequency oscillator with power amplifier and automatic power control | |
| CN100409565C (zh) | 用于开关模式rf放大器的可变偏压控制 | |
| EP1378057A2 (en) | Saturation prevention and amplifier distortion reduction | |
| JPS62274906A (ja) | 高周波増幅器 | |
| WO2001020349A1 (fr) | Detecteur magnetique et detecteur de courant | |
| JP3892725B2 (ja) | 電力用デバイスのｖｇｓドリフト及び熱補償のためのバイアス回路 | |
| JPS59154800A (ja) | プラズマ発生用高周波発振器 | |
| CN115085700B (zh) | 一种固态脉冲源输出波形延时控制装置及方法 | |
| JPH08102647A (ja) | パルス電源装置 | |
| CN107124148A (zh) | 一种控制电路、偏置电路及控制方法 | |
| CN112290641B (zh) | 一种低噪声浮地电流源 | |
| EP0418899A2 (en) | Amplifier circuit | |
| JP4298611B2 (ja) | プラズマ処理装置 | |
| ATE393980T1 (de) | Schaltung für leistungsverstärker | |
| US6809593B1 (en) | Power amplifier device and method thereof | |
| TWI841911B (zh) | 用於逐次逼近暫存器類比數位轉換器的電路 | |
| CN113452333B (zh) | 差分放大器和激光器驱动电路 | |
| Maeding | A CMOS operational amplifier with low impedance drive capability | |
| JP3976480B2 (ja) | プラズマ処理装置 | |
| WO1985001301A1 (fr) | Dispositif pulverisateur | |
| JPH07320857A (ja) | マイクロ波発生装置 | |
| WO2024055141A1 (en) | Semiconductor testing device and method of operating semiconductor testing device | |
| TWI775374B (zh) | 閉迴路開關控制系統、用於將開關之阻抗調節至參考阻抗之控制單元、以及用於控制開關之阻抗之方法 | |
| US6614304B2 (en) | Variable gain circuit having external controls and a low supply voltage | |
| JP2853483B2 (ja) | 化合物半導体マイクロ波用モノリシックｉｃ増幅回路 |