JPS59154080A - Photoelectric conversion semiconductor device - Google Patents

Abstract

PURPOSE:To reduce the area necessary to connect elements by a method wherein the first and second electrodes are provided in electric connection, and an open groove isolating the second electrodes of photoelectric conversion elements adjacent to each other is provided over the side of one of said elements. CONSTITUTION:The first electrode 2 of the first element 31 is electrically connected on the side surface 8 of said electrode 2 by a connector 30 extending along on passivation films 33 and 34 from the second electrode 38 at a connecting path 12, resulting in the series connection of the two elements. Further, since the third open groove 20 shift to the side of the first element 31, the right end of said groove 20 is provided by boring the connector part 30. Thus, the second electrodes 4 of the first and second elements 31 and 11 are cut and isolated in electric manner, and the leakage between these electrodes can be reduced.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention provides a photoelectric conversion method using a non-single crystal semiconductor including an amorphous semiconductor having at least one junction capable of generating a photovoltaic force upon irradiation with light, provided on a transparent insulating substrate. This invention relates to a photoelectric conversion device in which a plurality of elements (also referred to as elements) are electrically connected in series and capable of generating high voltage.

This invention uses a maskless process to reduce the area required for connecting multiple elements to 1/10 to 1/100 of the conventional mask bonding method. ).

The arrangement, size, and shape of the elements in the device of the present invention are determined by the design a1 specifications.

However, in order to simplify the content of the present invention, in the following detailed description, the first electrode on the lower side (substrate side) of the first element and the second electrode arranged on the right side of the first electrode will be described. The pattern will be described based on the case where the second electrode of the element (the upper part of the semiconductor and the 3 sides ll1ll from the substrate) are electrically connected in series.

In such a pattern, an opening groove that separates the non-single crystal semiconductors of the first element and the second element is provided across the transparent conductive film (hereinafter referred to as CT, F) of the first element, and The opening groove separating the second electrode of the first element extends over the nine halves of the first element, and the depth of the groove is set to 10 to 15 degrees below that depth, thereby reducing the manufacturing process. The feature is that it has redundancy to improve yield.

This invention provides a groove separating the second electrodes from the second electrode of the first element to the third electrode of the first element and the third electrode of the first element at the connection part by providing an open groove across the side of the first element. 2
There is an electrical connection between a connecting conductor (hereinafter simply referred to as a connector) made of an oxide conductor (hereinafter referred to as CO) that electrically connects the second electrode of the second element and the second electrode of the second element. This is to prevent leaks from occurring.

This invention is a semiconductor or a non-single-crystal semiconductor, and the electrical conductivity is ';f=IO(ncm)%=1(1-1
0CQcm), which is extremely poor, and the thickness of this semiconductor is 0.0CQcm).
By making the crossing depth more than 5 times that of 3~09''JI!, sufficient insulation can be achieved.By applying this fact, the isolation (electrical The aim is to carry out a

In other words, if the electrical insulation is 54g or more compared to the thickness,
It takes advantage of the characteristic of non-single crystal semiconductors that their insulation properties increase exponentially by a factor of 10.

When this end portion is 15≠ or more, the area required for connection at this connection portion becomes large, which is not preferable.

Conventionally, in the mask fitting method, the connecting part is 5 to 1
IM was needed, but the present invention is 1/10th of that.
~1/100 of 350~3, preferably 200.~5
By making it o/IA, some of this series can be reduced to 10 to 5
Considering the hybrid redo method that requires 0 stages, the area for generating photovoltaic power of the Rei panel used as a photoelectric conversion device (referred to as the existing lino area or actual lino area) is smaller than the conventional 7
It is characterized by increasing the effective conversion efficiency from 5 to 50% to 97 to 90%, and substantially improving the effective conversion efficiency by 10 to 20%.

This invention is a maskless process using the LS method, and in this manufacturing process, the open grooves formed in the previous process are
It is enlarged 300 times and projected on a television, etc., and the monitored opening is displayed on a computer (microcomputer).
Atlus within. Furthermore, shift from there based on this input information! - Define the position of the groove to be created in this process by sounding the amount and the information stored in the memory.

Then, at this specified position, a laser beam for LS, for example, a YAG laser with a wavelength of 1.0-
, laser beam diameter 2-) is irradiated.

Furthermore, it is moved at a speed of, for example, 5 m/min to create an open groove that is subordinate to the previous process.

By combining Kakunodo and <LS with a microcomputer, it has been experimentally determined that y is less than 2.5 for the desired value.
Open grooves in the next process can be created with accuracy of II or less.

That is, the LS of the present invention can perform a substantially computer-controlled self-line method.
It has another 4 digits, which is the d'w third degree system.

For this reason, all the problems such as mask misalignment, warping, and a decrease in manufacturing yield due to alignment accuracy, which are necessary with the conventional mask alignment method, occur! The feature is that the cause of the price increase and yield decrease in v'L is eliminated at once by ul.

Conventionally, many examples of photoelectric conversion devices (hereinafter simply referred to as devices), that is, devices □ in which a plurality of elements are arranged on the same substrate and are integrated, arrayed, or composited, are known.

For example, JP-A-55-4994, JP-A-55-1242
74 Furthermore, the patent application No. 54-9009 filed by the present inventor
7/90098/90099 (Showa 54.7.16
application) is known.

For example, the patent filed by the present inventor, Qi, covers 5 semiconductors.
ix (:1-e-5i), which is different from the case where only amorphous Si is used, and furthermore, as this semiconductor, in addition to the amorphous structure, hydrogen or halogen elements containing a microcrystalline structure are added. It has the feature that it is an integrated or hybridized non-single crystal semiconductor having at least one PN or PIN junction.

However, in all of these conventional inventions, as shown in FIG. 1, which is a vertical cross-sectional view, the mask matching-U method is used, and the matching accuracy is insufficient and a large area is required for the connecting portion.

For example, even when a metal mask is used, in a method of directly and selectively producing a conductive layer or a semiconductor layer, the mask that imparts this selectivity may deviate by 0.5 to 3 mm during film formation.

Furthermore, since coating components are formed on this mask, the mask becomes contaminated, the peripheral edge of the coating formed along the mask becomes unclear, and crosstalk (leakage current) between adjacent electrodes occurs. It had many drawbacks, such as being a factor in the occurrence of the disease.

Furthermore, conventionally, in known screen printing methods, conductors or semiconductors formed entirely on a substrate are
This is a method of etching and removing using an IR mask.

However, in this method, the process is extremely time consuming, such as the process of aligning the mask for screen printing, the coating process of lettuce 1, the beta solidification process, the etching removal process of conductors or semiconductors, and the process of removing lettuce I. As a result, manufacturing prices could not be avoided.

However, in the photoelectric conversion device of the present invention, particularly in the H-shaped photogravitational conversion device, both the electrode conductive layer and the semiconductor layer each have a thickness of 500 to 300 A).
0 A, 0.2-0. It was found that by using the LS method, it was possible to manufacture the mask without requiring computer-controlled automatic mask alignment.

As a result, since the mask of the present invention is not used at all in place of the conventional mask alignment process, it is a maskless process, which is extremely simple and highly accurate, and reduces the manufacturing cost of the device, resulting in a cost of 500 yen/W. The purpose is to provide an extremely innovative photoelectric conversion device that can be manufactured at a price of 100 to 200 yen/W by expanding the manufacturing scale.

The structures of the conventional example and the present invention are described below according to the drawings.

FIG. 1 is a longitudinal sectional view of a conventionally known photoelectric conversion device using a mask alignment method.

In the drawings, a transparent conductive film (abbreviated as CTF) constituting a first electrode is selectively formed on a transparent substrate (for example, made of glass) (1) by a first mask alignment step.

Further, a semiconductor layer (3) is similarly selectively formed by a second mask alignment step.

Furthermore, the second electrode (4) is formed by a third mask combining process.
is provided.

In FIG. 1, there is a connecting part (12) between the elements (11) and (31), and in the connecting part, one side surface (16) of the CTF is covered by the semiconductor layer (3), and the other side is covered with the semiconductor layer (3). CTF of
In order to prevent the semiconductor layer (3) from covering the surface (14) of the CTFO, a gap of l ~5 mm, for example 3 mm, is required between the CTFOs (13).

Furthermore, the first electrode (37) and the second electrode (38) are (1
There is electrical connection on the surface of 4), but this part is connected to (39)
Since the second electrode of
In particular, this second electrode (39) is characterized by a gap (6) of m.
) is of critical importance to manufacturing yield, in order to avoid short-circuiting the connecting portion (
12) has become wider. In addition, the first electric ti
(37) and the second electrode (39) tend to leak through the semiconductor surface (28), resulting in a decrease in reliability.

Therefore, the first electrode (37) and the second electrode (39) can be made without adding any steps in the manufacturing process.
A structure in which leakage between electrodes is eliminated by covering the surface of the semiconductor between the electrodes with a panshihation film and setting the depth to 10 to 150/lI is an excellent method for improving manufacturing yield. It was something. In addition, especially in the present invention, the electrodes and connectors are made of conductive oxide in order to prevent the first and second electrodes from becoming loose. Therefore, in the present invention, high reliability can be obtained while minimizing the required area of the connecting part, which is extremely important.
It was 1J1.

The present invention meets this objective.

In addition, in the conventional example, the gap between the connecting parts is 3ml1+, for example, 20cm x 60cm and 1]15mm (2
0cm x 15mm), if the end of the element is 5mm long, there will be 33 stages of connections, and the total connection area will be 10cm.
m (area of 200c+n'), and as a result, the effective area remained at 75%, taking into account the peripheral area.

The object of the present invention is to provide an innovative photoelectric conversion device that eliminates the complexity of such a process and can increase the self-supporting surface to 87%.

The details of the invention are shown below in accordance with the drawings.

Figure S2 is a vertical lli view showing the manufacturing process of the present invention.

In the drawings, the transparent substrate (1) is a glass plate (for example, thickness 0.6 to 2.2 mm, e.g. 1.2 mm, length [left-right direction in the drawings] 60 cm, middle 20 cm).

Furthermore, a transparent conductive film such as I
TO (M-modified indium tin oxide mixture, ie, a film in which 10% rK of tin oxide is added to indium oxide) (approximately 1500A) +SnO, (200 to 4008) or oxide to which a halogen element is added Vacuum deposition method L
It was formed by a PCV D method, a plasma CVD method, or a spray method.

After that, a YAG laser processing machine (manufactured by Nippon Laser) is used to process the substrate from the bottom or top of the substrate with an output of 3 to 6 W (focal length: 4
0mm), and the representative number is 3.
- is controlled by a microcomputer, a laser beam is irradiated from above, and a first opening groove (13) for a scribe line is formed by scanning the laser beam, and each inter-element region (
31), the first electrode (2) exploded at (11).

The open groove (13) formed by LS has a width of about 3 and a length of 2.
At a depth of 0 cm, each of the first electrodes was completely cut and separated.

For this reason, as is clear in the drawing, a part of the substrate (1) was hollowed out to a depth of 300 to 130 OA (four parts (6
0)).

Thus the first element (31) and the second element (11)
The middle of the area constituting the area is 15 to 30 mm, for example, 15 mm.

As described above, using the LS method, the CTF (2
) was cut and separated to form a first open groove.

Thereafter, a non-single crystal semiconductor layer (3) for PN or PININ junction was formed on the upper surface by plasma CVD or LPCVD to a thickness of 0.2 to 0.8%, typically O0≠.

Typical examples are P-type semiconductors (SixC7-xx=0.8 approx. A non-single crystal semiconductor with one PININ junction, or a P-type semiconductor (SixC1
() - ■ type, N type, P type 5i4i conductor - I m5tx
Gel (semiconductor - two PINs made of N-type Si semiconductor)
IN junction Tandem type f”1N with one IN junction
PIN,',,,I'' is an IN junction semiconductor (3).

Such a non-single crystal semiconductor (3) was formed to have a uniform thickness over the entire surface.

Further, as shown in FIG. 2(B), the first open groove (1
A second opening (18) was formed on the left side (first element side) of 3) by the second LSI process.

In this drawing, the first and second open grooves (13) (18
) are shifted by Q%.

The laser beam could be irradiated either from the direction of the lower blade of the glass (1) or from the bending force of the substrate.

The second open groove (18) thus forms a side surface (8) of the first electrode.
(9) was exposed.

The side surface (9) of this second groove may be on the left side of the side surface (16) of the first electrode of the first element, and the side surface (9) of the second groove may be shifted 10 to 10 degrees toward the first electrode side. That is, it is characterized in that it is provided over the first electrode position of the first element.

As a typical example of this, it may enter the inside (9) of the first electrode (37) as shown in FIG. 2(B).

Furthermore, in the present invention, as shown in the conventional example, it is not necessarily necessary to expose the surface (14) of the first electrode (see FIG.
The force was a little too strong, and the depth direction of this CTF (37) was removed, and as a result, the connector with the electrode (38) of S2 in Fig. 2 (C) was removed on the side surface (8). There is no practical problem even if they are in close contact.

In industrial applications of the present invention, it is extremely important to be able to provide manufacturing margin for variations in the intensity of the output pulse of the Zunawara Red light and the depth of the groove.

In Fig. 2, a second electrode (4) and a connector (30) on the back side are further formed on this - side as shown in Fig. 2 (C), and a third LS is used for cutting and separation. The third opening i+1(20) of 14k.

For this second electrode (4), a conductive oxide film (CO) (45), which is a feature of the present invention, was used. Its thickness is 700~
It was formed to a thickness of 1400λ.

As this CO, ITO (a mixture whose main components are insium oxide and soot oxide) (45) was formed here. It is also possible to form this CO with indium oxide as a main component. As a result, CO was in close contact with the semiconductor (45) (45'), and CO was also in contact with the side surface (32) of the semiconductor via the oxide insulator. As a result, since the metal constituting this co-octactor is an oxide compound from the beginning, it does not migrate into the semiconductor, making it highly reliable. Furthermore, a reflective metal (4
6) t) Al or aluminum doped with 1% or less of silicon was formed to a thickness of 300 to 3000'A.

Furthermore, nickel is added to the L side for external connection QL+9j &
It is also effective to form aluminum for preventing oxidation.

For example, ITO as CO is 1050X, silver or aluminum is 1ooo'A, and nickel is 1500X.
It has a triple structure of A.

The ITO and reflective metal are used to promote reflection of long wavelength light on the back surface side and to self-effect photoelectrically convert long wavelength light of GOO~800 nm.

Furthermore, nickel is applied to the external lead electrode (2) in the electrode part (5).
3) to improve adhesion with the material.

These are electron beam evaporation methods or CVD/! , was formed at a temperature of 300'C or less to avoid deteriorating the semiconductor layer.

ITO as CO is extremely important in the present invention. The effects are as follows: [1] The metal (4G) of the second electrode does not form an alloy layer with silicon, and the inside of the semiconductor (3) is abnormally expanded, causing a gap between the upper and lower electrodes. Prevents it from being put away.

This is useful for improving reliability in high temperature storage tests at 150 to 2006C.

[2] It is preferable that the long-wavelength light that is not absorbed in the semiconductor (3) attached to the incident light (10) is reflected by the reflective metal (46), and that the ITO thickness is particularly preferably 900 to 14mm. is 600-800 nm with an average thickness of 1050 people
This is effective in increasing the reflection of long-wavelength light and improving conversion efficiency.

[When forming the third open groove (2o) of the three-layer present invention, the metal (46) is dissolved in the scrizo region by the high temperature Q, l of 2000''C or more of the radar light, and the metal (46) is dissolved in the semiconductor (3). and the tenor leakage current between electrodes (39) and (38) becomes IOA/
It is possible to prevent the occurrence of cn1 or more.

Therefore, it is possible to prevent a decrease in manufacturing yield due to the formation of the third open groove.゛[4'] This CO also constitutes the connector, and whenever the metal penetrates the oxide insulator (33) for the sensitive active layer of the semiconductor, especially the PIN semiconductor, it causes damage at the connector part. This prevents a decline in mold yield and reliability.

[5] Semiconductor - C is compatible with P- or N-type semiconductors
By forming an O, immediately r) A CO whose main component is ITO or indium oxide is provided in close proximity to an N-type semiconductor to lower the connection resistance between the semiconductor and the electrode, and improve the fill factor and conversion efficiency. It is possible to measure the direction.

[6] Even if a part of the completed open groove is formed on the second open groove, by making the connector part a co, this part will be placed on the semiconductor when the third open groove is formed. Layer ni/III people 2
Unlike the case of metals, there is no short circuit between the two electrodes, which is advantageous in terms of manufacturing yield.

In particular, the present invention uses a connector as CO and its &J a J
) In addition to improving the retention, the third groove is connected to the first groove to prevent an electrical short between Co (45) that constitutes the second electrode and the connector (3o). The distance between the electrodes (39) and (38), which are provided over the element area (31) and where the open circuit voltage of the first element is generated, is typically 3 V for 20 to 5 mm of the laser diameter, and is approximately 3 series. It is characterized by the fact that it is spaced apart, and in addition, the crossing depth is increased by more than 10%. That is, the center of the third open groove (20) is preferably 10 to 15 strings deep compared to the center of the second open groove (30), preferably 20 to 1007 mm, typically 5 mm deep. It is installed across the element side.

For this reason, when the shift is 1~~ by the laser beam 3-,
Since the optimal contact between the Co (45) end of the second electrode (39) of the first element and the end of the connector is without fluctuation of the contact, it can be made as long as 6 contacts. Therefore, the leak during this period was less than one-tenth that of other parts, and the major feature was that there was no problem at all with regard to fluctuations in price.

This shows the case where the second electrode is irradiated with Radhe light from one side to be cut and separated to form an open groove (20).

This radar light is densely distributed on semiconductors, especially on the -L plane.
Slightly hollow out the 300A N or P type thin semiconductor layer 40) Adjacent first element (31) second element (1
1) Prevention of Lz stalk (leakage current) due to residual conductor or conductive semiconductor in the open grooves between the two.

In particular, the semiconductor (3) is a P-type semiconductor INi (42),
I-type semiconductor layer (43), N-type semiconductor 1i (44)
For example, the N-type semiconductor layer has a microcrystalline or polycrystalline structure. When the so-called electrical conductivity is as high as 1 to 200 (Qcn+), the N-type semiconductor layer of the present invention is extruded,
The fourth part (40) is an intrinsic semiconductor, and in addition, no metal atoms remain in the semiconductor, and a pad haze film of an oxide insulator such as silicon oxide (34) is provided to prevent leakage current generation. was extremely effective for high reliability. This gouge exceeds the I-type semiconductor j-,
It was preferable that the CTF for the first electrode not be reached.

In this way, it was possible to create a photoelectric conversion device in which a plurality of elements (31) and (11) were directly connected at the connecting portion at 9° shown in FIG. 2(C).

FIG. 2(D) shows the attempt to further complete the present invention as a photoelectric conversion device, in which a silicon nitride film (21) is deposited at 50% by plasma vapor phase method as a 7-wavelength film.
It was formed uniformly to a thickness of 0 to 2000 Δ, further preventing leakage current between each element from occurring due to adsorption of moisture.

Further, an external lead terminal (23) was provided at the peripheral portion (5).

These were filled with an organic resin (22) such as polyimide, polyamide, Kapton or epoxy.

In this way, for the irradiation light (10), each element was placed in the middle of 1 square (60 cm x 20 cm) as in this example.
．． 15CJ7t in the 35mm connecting part, I'l in the external extraction electrode part] 10 mm, and the peripheral part 4mm, so there are essentially 40 stages within 580mm x 192n+m, and the effective area (192+nm
102 to I11, that is, 91.8%).

As a result, if the segment has a conversion efficiency of 10.6% (1.05 cm), the panel has an effective conversion efficiency of 6.7% (theoretically 9.7%, but due to the resistance of 40 stages connected). decreased) (total 1 [100m1/C total])
It was possible to have an output power of 73.8W.

Furthermore, when this panel was subjected to a high temperature storage test at 150'C, no decrease of 10% was observed after 1000 hours, for example, with 20 panels, the worst case was 4%, X=1.5%.

This is an astonishing value considering that 17 panels were rendered inoperable in 10 hours when reliability tests were conducted under the same conditions using the conventional mask method. Ta.

FIG. 3 is a longitudinal cross-sectional view and a plan view (end portion) showing the most typical positional relationship of the grooves that are formed during three LSI cycles.

The numbers and steps are the same as in FIG.

Figure 3 (A) shows the first opening (13), the first element -
(31), the second element (moon), and the connecting portion (12) are combined.

As is clear from the drawing, the first groove (J3) is located on the substrate (
1) is slightly hollowed out.

Furthermore, the second open groove (18) does not constitute the first element.
, are provided facing toward the first electrode (2) side of the conductor (3), and these also eliminate the interference.

Therefore, the first electrode (2) of this first element (31)
and the second electrode of the second element (11) are connected to the connecting portion (12).
From this second electrode (38), the badge and Ision W
The two 4. terminals are connected in series.

Furthermore, in the drawings, one 5ixC+ semiconductor (3) having at least one PN or PINI error
((0<x<1) A semiconductor having one PIN junction consisting of P-type-I-type Si-microcrystallized N-type Si (44) is provided.

This third open groove (20) is shifted toward the first element (31) to a depth of approximately 39 mm.

Therefore, the right 11th part of the third opening a (20) is provided under the connector part (30).

Thus, the respective second electrodes (4) of the first J3 and the elements 1) (11) of the bud) 2 are electrically disconnected!・υ1 min■, and also the leakage between this electrode is IOA/c+n (
It was possible to make it smaller than ff) on the order of IOA per Ic+n+11.

FIG. 3(B) shows a plan view, and at its end (lower side in the drawing) the first, second and third openings /I+4 (13),
(18) and (20) are provided.

In order to reduce leakage in this direction, semiconductors (
3) has an 11-y structure that covers the first electrode (2);
Reduce the distance between the second electrode (Sa-U Rugogaq)
It is a sign.

In addition, part of the element is the first electrode (2), :i? Sotai,
The second electrode (4) is blinded 1" by LS (5") at a time.
0) Shita.

In this case as well, an IF society is formed on the side surface of the semiconductor like IG1.

In this drawing, the first, second, and third open grooves 11J are 5
0 to 2%, and typically 12% of the connecting portion was 1IJ150 to 8%.

This is the case when using the YAGL spot layer with an output of 3~51 (2?'') 4~7W (3V), but by further reducing the spot diameter from a technical standpoint, this connection can be achieved. The present invention has an inventive step in that it is possible to further reduce the area required for the photoelectric conversion device and further improve the effective area (effective efficiency) of the photoelectric conversion device.

FIG. 4 is an enlarged view of the externally drawn electrode portion when a small photoelectric conversion device is simultaneously manufactured in large quantities, rather than a large panel for a calculator or the like.

FIG. 4 (Δ) corresponds to FIG. 2, but the external extraction electrode part (5) has a pad (49) that contacts the conductive rubber "M" pole (47), and this pad (49) is the second electrode (
upper electrode) (4).

The pressure of this special electric 4% (47) is too strong and puff F'
The opening (13) is set so that even if (4) penetrates the first electrode (2) and semiconductor (3) below, (49) and (2) will not be damaged. ing.

Further, in the outer part, the first electrode, the semiconductor, and the second electrode are simultaneously cut and separated by an open groove (50) which is scribed in one LS.

Furthermore, FIG. 4(B) shows that another pad (48) connected to the lower first electrode (2) is made of the second electrode material (■
8) are connected and provided with ζ.

Furthermore, Pano l-' (4B) is a conductive rubber electrode (46)
Contact flIi! and is electrically connected to the outside.

Bano 1 (48) is electrically separated from the adjacent photoelectric conversion device by the open grooves (18) and (20) y FO).
1, and then cut the glass between this device.11. By cutting and cutting the li in a post-process, a large number of photoelectric conversion devices can be manufactured from one panel without using any alignment masks.

For example, on a panel of 20c+n X GOcm, 6cln
If we try to make a photoelectric conversion device (for a calculator) of

That is, the photoelectric conversion device is covered with an organic resin mold (22) except for the electrode parts (5) and (45), and if a small power solar cell is to be made after this, it can be cut 11i with a glass cutter.

Furthermore, this panel, for example, 40cm x 40cm
j! Packaged by combining E or G Oc m720cm in 3 or 4 series in an aluminum frame, 120+, +n 40cm NEDO
It is possible to provide a standard high power panel.

In addition, the EDO standard panel is made of fluorine-based material ('A') by Seaflex, and the photoelectric transformer of the present invention J9,
It is also effective to attach a cross-section to the reflective surface side (upper side in the drawing) of the 4-piece t to increase mechanical strength against wind pressure, rain, etc.

In the present invention, the substrate is made of glass, especially the back side of the transparent insulating substrate.

However, if this substrate is a flexible organic resin, 64 silicon oxide or silicon nitride is used on the resin. It is effective to use a composite substrate formed to a thickness of .

In particular, if this composite substrate is used in the embodiments described above, silicon oxide or silicon nitride will damage the CTF on its upper surface and create a mixture of the substrate and C'rF. Igiri Yuru Furono: 1 - Whitening the fruit of the fruit -
But it cost ¥4.

Further, the present invention will be described in detail below with reference to Examples.

Example 1 This embodiment is illustrated according to the drawing in FIG.

That is, chemically strengthened glass with a thickness of 1.1 as the transparent substrate (1)
m+n, M size 00cn+, medium 20cm was used.

Apply a layer of silicon oxide to a thickness of 0.1 mm on this 1-
It was called a pronokink layer.

Furthermore, CTF is added on top of that IT 01G00 suit 5nO
L3008 was produced by the electric Y beam evaporation method.

Furthermore, after this, the first open groove was prepared at a scanning speed of 501/min by controlling the first open groove at 307 u and the YAGL at output 4 using a microcomputer.

This output completely turns off the CTF, so it is open't? 5
A ■-shaped groove with a width of about 27 mm and a depth of about 3000 A was created in the center of the glass substrate by melting away the glass substrate.

The element regions (31) and (11) were set to 15 mm.

After this, the PI shown in FIG.
A non-single crystal semiconductor having one N junction was manufactured.

Its total thickness is approximately 0. It was F374.

After darning, monitor the first groove on the TV, and from there it is 5? Shift the first element (31)
-Diameter 3-, output 5W, popular 1ooc temperature “ζ
Second open by LS! (18) was prepared as shown in FIG. 2<B>.

In this way, silicon oxide (33) for padding and isolation was formed to a thickness of about 100A on the side surface (32) of the semiconductor (3).

Further, using this whole as CO, 11'○ was made by the N7 beam evaporation method to an average film thickness of 1 osoX, and on the top surface, Al containing 0.5% silicon was made into 1200 IVs by the electric Y beam deposition method. In this way, the second electrode (45) and connector (30) were constructed.

Furthermore, the third open groove (20) is similarly placed in an oxidizing atmosphere.
S was shifted from the second open groove (18) to the first element (31) side to a depth of 5 V to obtain the U-U shown in FIG. 2(C).

The output of the radar light was 3 W, and the other conditions were the same as those for producing the second open QNj.

In this way, FIG. 2(C) was produced.

After the process shown in Figure 2 (C), scan the edge of the panel using the optical output blade to scan all of the first electrode, half body, and second electrode in a rectangular shape 4 mm inside the edge of the glass. This prevents electrical short circuits with the panel frame.

After this, PCV Badge Haygeon IIQ (21)
The silicon nitride film was made into 1,000 layers using the D method.
A trowel was made at a temperature of 'C.

Then 15mm on the panel of 20c+lIX GOc+n
It is possible to make 40 stages of X 'f of 11j.

As the effective efficiency of the panel, AMI <roomW /
c+K), I was able to obtain 6.7% and a cuff output of 3.8W.

The self-effect surface is 1102c++ir, and there are 41 panels in total.
I was able to use 91.3 脣6 for Yu'Jノ.

Example 2 Substrate glass: thickness 1.1m + n size 20cm
GOcm was used. Furthermore, a plurality of photoelectric conversion devices for calculators with dimensions of 5°n+X 1 and 5cm were fabricated on the same substrate. For Gogo, the element shape is 9mm x 13mm5
Continuous stage-3) Ray.

The connecting part is 100/14, and the Ta 11 part Mio is as shown in Figure 4 (
8) It is established as the structure of (I3).

It was then possible to make 160 units of calculator equipment at once.

Fluorescent lamps as an effective conversion rate of 4.5% 2001x
I did test 1 with -.

As a result, the final assembly yield was 83% (-11%).

This is extremely difficult considering that in the conventional method, the power could not be increased by 40-50%, and the effective conversion efficiency could only be achieved up to 3.2%, depending on the required surface of the connecting part. It was something I had.

The rest is the same as in Example 1.

Embodiment 3 This embodiment is Embodiment 2, in which the board is 15 (door j'
Polyimide 4A4 resin, which is a translucent proprietary resin from Jza, was used.

Furthermore, as a blocking layer, a silicon oxide layer of 0.22/14 was prepared by the plasma vapor phase method at a temperature of 250 tons by the reaction of John and carbon dioxide gas, and this organic resin was
It was used as a blocking layer to prevent damage from S.

The rest is the same as in Example 2.

In such a method, the l+lli case of the substrate is as shown in Example 2.
It cost 30 yen, but I was able to turn it into 2 PJ/calculator elements.

In addition, it takes 511 minutes to divide each calculator element from the sheet.
Since it can be carried out using a 1 or scissors, it is extremely easy to work with and is inexpensive.

Furthermore, if you cut 1tli from 1-1 of the sea, 10-1
Automatically shuts off by LS using 5W strong pulsed light
Or 1 is now possible.

In GonosoX hL fail, the 21st Q+(1
)) As shown in (, upper protection ￥1 machine 4A・1 fat (
22) is produced, and by each knee, the photoelectric conversion device is sandwiched between the organic 4fil and the fat sheet 1, and it is packed and juggled, and the bendability is achieved.7.It is extremely cheap! 1ll
i made mass production possible.

The yield in this example is 72 from 1 [30 pieces were made].
% and the effective conversion efficiency of 4.5% is expressed as 1 (D) (!1).

In Figures 2 to 4, the light is incident on the lower transparent 111.
, box edge,! l! , I decided to treat it better.

However, the invention does not limit the light incident side to one.

[Brief explanation of drawings]

FIG. 1 shows a longitudinal section 121 of a conventional photoelectric conversion device. Figure 2 does not show the manufacturing process of the photoelectric conversion device of the present invention.
1i side view. FIG. 3 is a vertical IJJi plane view of the photoelectric conversion device of the present invention. FIG. 4 is a vertical cross-sectional view of another photoelectric conversion device of the present invention, enlarged by 1115 minutes. Patent applicant Semiconductor Energy Research Institute Co., Ltd. 112 1υ JS 1 (2) j9■ (A
(B) Always 40

Claims (1)

[Scope of Claims] (2) A first electrode of a translucent electric wire on an insulating substrate, and a non-single crystal semicircular body that is closely placed on the electrode and can generate a photovoltaic force when irradiated with light; A photoelectric conversion device in which a plurality of photoelectric conversion elements having a second electrode in close contact with the semiconductor are electrically connected in series and disposed on the insulating substrate,
The first electrode is provided electrically connected to the second electrode of the second element p adjacent to the first photoelectric conversion D'f by an oxide A9 electric wire, and the first and second A photoelectric conversion semiconductor device characterized in that the groove separating the second electrode of the photoelectric conversion element is provided across the side of the first photoelectric conversion element. 2. In claim 1, the opening groove is 10-15
A photoelectric conversion device characterized in that a P- or N-type semiconductor layer extending over the side of the first photoelectric conversion element at a depth of 0 and also separated from the second electrode is provided. Semiconductor equipment. 3. A photoelectric conversion semiconductor device according to claim 1, characterized in that the charge-giving oxide is mainly composed of indium oxide or a mixture of indium oxide and tin oxide.