JPS59152662A - フオトセンサ−用ｉｃ - Google Patents

フオトセンサ−用ｉｃ

Info

Publication number
JPS59152662A
JPS59152662A JP58026691A JP2669183A JPS59152662A JP S59152662 A JPS59152662 A JP S59152662A JP 58026691 A JP58026691 A JP 58026691A JP 2669183 A JP2669183 A JP 2669183A JP S59152662 A JPS59152662 A JP S59152662A
Authority
JP
Japan
Prior art keywords
light
transistor
circuit
shielded
photo
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58026691A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6139744B2 (enrdf_load_stackoverflow
Inventor
Naomi Kawaguchi
河口　直巳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP58026691A priority Critical patent/JPS59152662A/ja
Publication of JPS59152662A publication Critical patent/JPS59152662A/ja
Publication of JPS6139744B2 publication Critical patent/JPS6139744B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/197—Bipolar transistor image sensors

Landscapes

  • Bipolar Transistors (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP58026691A 1983-02-20 1983-02-20 フオトセンサ−用ｉｃ Granted JPS59152662A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58026691A JPS59152662A (ja) 1983-02-20 1983-02-20 フオトセンサ−用ｉｃ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58026691A JPS59152662A (ja) 1983-02-20 1983-02-20 フオトセンサ−用ｉｃ

Publications (2)

Publication Number Publication Date
JPS59152662A true JPS59152662A (ja) 1984-08-31
JPS6139744B2 JPS6139744B2 (enrdf_load_stackoverflow) 1986-09-05

Family

ID=12200412

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58026691A Granted JPS59152662A (ja) 1983-02-20 1983-02-20 フオトセンサ−用ｉｃ

Country Status (1)

Country Link
JP (1) JPS59152662A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4743955A (en) * 1985-05-01 1988-05-10 Canon Kabushiki Kaisha Photoelectric converting device
JP2006281806A (ja) * 2005-03-31 2006-10-19 Mazda Motor Corp 車両用エンジン補機の配設構造

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4743955A (en) * 1985-05-01 1988-05-10 Canon Kabushiki Kaisha Photoelectric converting device
JP2006281806A (ja) * 2005-03-31 2006-10-19 Mazda Motor Corp 車両用エンジン補機の配設構造

Also Published As

Publication number Publication date
JPS6139744B2 (enrdf_load_stackoverflow) 1986-09-05

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