JPS5915163B2 - Cylindrical domain element - Google Patents
Cylindrical domain elementInfo
- Publication number
- JPS5915163B2 JPS5915163B2 JP51017244A JP1724476A JPS5915163B2 JP S5915163 B2 JPS5915163 B2 JP S5915163B2 JP 51017244 A JP51017244 A JP 51017244A JP 1724476 A JP1724476 A JP 1724476A JP S5915163 B2 JPS5915163 B2 JP S5915163B2
- Authority
- JP
- Japan
- Prior art keywords
- magnetic domain
- cylindrical magnetic
- domain element
- cylindrical
- rgg
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
- G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/06—Thin magnetic films, e.g. of one-domain structure characterised by the coupling or physical contact with connecting or interacting conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/26—Thin magnetic films, e.g. of one-domain structure characterised by the substrate or intermediate layers
- H01F10/28—Thin magnetic films, e.g. of one-domain structure characterised by the substrate or intermediate layers characterised by the composition of the substrate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thin Magnetic Films (AREA)
Description
【発明の詳細な説明】
本発明は円筒磁区素子の製作において、その歩留りを向
上せしめる構成をもつ円筒磁区素子に関するものである
。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a cylindrical magnetic domain element having a structure that improves the yield in manufacturing the cylindrical magnetic domain element.
磁性ガーネットを円筒磁区材料として用いる際膜厚は数
μｍ程度の薄膜であることが必要である。When using magnetic garnet as a cylindrical magnetic domain material, the film needs to be a thin film with a thickness of about several μm.
磁性ガーネットを薄膜にするには磁性ガーネットを単結
晶基板上にエピタキシャル成長させる方法が１９７１年
ヴアーネリンによつてアイ●イー。イー・イートランザ
クシヨン オン マグネテイツクス誌ＭＡＧ−７巻４０
４頁〜４０９頁（Ｌ、Ｊ、Ｖａｒｎｅｒｉｎ｜１ＥＥＥ
Ｔｒａｎｓａｃｔｉ０ｎ０ｎＭａｇｎｅｔｉｃｓ、ＭＡ
Ｇ−７、４０４〜４０９、１９７１）で発表されてから
は、この方法によつて作られた磁性ガーネット薄膜が円
筒磁区材料と５ して一般に用いられている。円筒磁区
材料用の単結晶基板としては例えばガドリニウムのよう
な希土類を含んだ希土類ガリウムガーネット（以下ＲＧ
Ｇと称す。）の（１１１）面で切り出し、研磨した平板
である。１０円筒磁区素子の・一般的な構成は、チヤン
の編集になるマグネテイツク●バブル●テクノロジーの
１８２頁〜１８６頁（“’ＭａｇｎｅｔｉｃＢｕｂｂｌ
ｅＴｅｃｈｎｏｌｏｇｙ’’ｅｄｉｔｅｄｂｙＨｓｕＣ
ｈａｎｇ｜ｐｐ１８２〜１８６、ｐｕｂｌｉｓｈｅｄｉ
ｎ１９７５ｂｙＩＥＥＥ１５Ｉｎｃ、、ＮｅｗＹｏｒｋ
）に示されるようにＲＧＧ基板上に磁性ガーネットをエ
ピタキシャル成長させて円筒磁区材料となしその上に適
当なスペーサー層を介してパーマロイ等の円筒磁区転送
用軟磁性体パターンや転送制御用の導体パターンを設け
る２０ことにより為されている。In 1971, Vannerin developed a method of epitaxially growing magnetic garnet on a single crystal substrate to make a thin film of magnetic garnet. E-E Transaction on Magnetics Magazine MAG-7 Volume 40
Pages 4-409 (L, J, Varnerin | 1EEE
Transacti0n0nMagnetics, MA
G-7, 404-409, 1971), magnetic garnet thin films made by this method have been generally used as cylindrical magnetic domain materials. As a single crystal substrate for cylindrical magnetic domain material, for example, rare earth gallium garnet (hereinafter referred to as RG) containing rare earth elements such as gadolinium is used.
It's called G. ) is a flat plate cut and polished on the (111) plane. The general configuration of 10 cylindrical magnetic domain elements is described in pages 182 to 186 of Magnetic Bubble Technology edited by Chiang.
eTechnology''editedbyHsuC
hang｜pp182-186, publishedi
n1975byIEEE15Inc, New York
), magnetic garnet is epitaxially grown on an RGG substrate to form a cylindrical magnetic domain material, and a soft magnetic material pattern such as permalloy for cylindrical magnetic domain transfer and a conductor pattern for transfer control are formed on the cylindrical magnetic domain material through an appropriate spacer layer. This is done by providing 20.
円筒磁区素子のパーマロイや導体パターンはホトリソグ
ラフの技法で作られるのでホトマスクの製造精度やホト
リソグラフィ工程での歩留りの点から、円筒磁区素子の
完全な機能をもつ単位ブロック（円筒磁区素子チッ２５
プ）の大きさには制限が加えられる。現在ではチップサ
イズとしては６ｍｍ×６ｍｍが一般に用いられている。
円筒磁区素子製造の工程を考慮すると、大きな円筒磁区
材料に前記の如き円筒磁区素子チップを３０多数設けて
、最終製造工程で各チップを個々に切り離すことの有利
さは、半導体ＩＣ技術ですでに公知である。The permalloy and conductor patterns of the cylindrical magnetic domain element are made using photolithographic techniques, so from the viewpoint of photomask manufacturing accuracy and yield in the photolithography process, it is necessary to use a unit block with a complete function of the cylindrical magnetic domain element (cylindrical magnetic domain element chip 25).
There are restrictions on the size of the pool. Currently, a chip size of 6 mm x 6 mm is generally used.
Considering the manufacturing process of cylindrical magnetic domain elements, the advantage of providing 30 cylindrical magnetic domain element chips as described above on a large cylindrical magnetic domain material and separating each chip individually in the final manufacturing process is already known in semiconductor IC technology. It is publicly known.
円筒磁区素子チップの切り離しは割線と分割によつて行
われ得る。一般に円筒磁区素子チップは矩形状に製造さ
れていて、矩形の辺に３５平行に切り離される。矩形状
チップの辺に平行に割線を入れ、その割線に沿つて分割
することによりチップを切り離すのが一般的である。し
かし乍ら円筒磁区素子チツプを切り離す際、切り離し線
を示す刻線部分よりはずれてウエハ一が割れやすく、該
当する円筒磁区素子チツプは不良品となり全体の歩留り
が悪くなる欠点がある。また刻線を入れる方法の一つと
してダイアモンド針先で刻線を入れるダイアモンド・ス
クライバ一が普及しているが、ＲＧＧは臂開性は顕著で
ないため分割の良否はスクライバ一のダイアモンド針先
の鋭さに依存し、長く使用したダイアモンド針先では円
筒磁区素子チツプの不整割れが生じやすく、したがつて
ダイアモンド針の寿命が短い欠点がある。Separation of the cylindrical domain element chips can be performed by scoring and dividing. Generally, a cylindrical magnetic domain element chip is manufactured in a rectangular shape and is cut into 35 pieces parallel to the sides of the rectangle. Generally, a dividing line is drawn parallel to the side of a rectangular chip, and the chips are separated by dividing along the dividing line. However, when the cylindrical magnetic domain element chips are separated, the wafer tends to break away from the marked line indicating the separation line, and the corresponding cylindrical magnetic domain element chips become defective, resulting in a lower overall yield. Diamond scribers, which use a diamond stylus tip to make scribe lines, are popular as one of the methods for making scribe lines, but since RGG does not have remarkable opening properties, the quality of the division depends on the sharpness of the scriber's diamond stylus tip. The disadvantage is that a diamond needle tip that has been used for a long time tends to cause irregular cracking of the cylindrical magnetic domain element chip, and therefore the life of the diamond needle is short.
本発明の目的はＲＧＧ基板をもつ円筒磁区素子製作に関
し、円筒磁区素子チツブの歩留りを向上させ、且つダイ
アモンド●スクライバ一のダイアモンド針端の寿命の延
長可能な素子構成をもつ円筒磁区素子を提供することで
ある。An object of the present invention is to provide a cylindrical magnetic domain element having an element configuration that can improve the yield of cylindrical magnetic domain element chips and extend the life of the diamond stylus end of a diamond scriber, with respect to manufacturing a cylindrical magnetic domain element having an RGG substrate. That's true.
すなわち本発明による円筒磁区素子はＲＧＧ単結晶の（
１１１）を表面とする薄片を基板とする円筒磁区を保持
し得る円筒磁区材料と、この材料上にＲＧＧ単結晶基板
の〔Ｉｉ２〕若しくは〔１２１〕若しくは〔２１１〕方
向に垂直な方向より５度以内の方向に円筒磁区素子の平
行四辺形の少なくとも一つの端辺を持つように設けられ
た導体パターンや円筒磁区転送用軟磁性パターンとによ
り構成される。That is, the cylindrical magnetic domain element according to the present invention is an RGG single crystal (
A cylindrical magnetic domain material capable of holding a cylindrical magnetic domain whose surface is a thin piece having a surface of It is composed of a conductor pattern and a soft magnetic pattern for cylindrical domain transfer, which are provided so as to have at least one edge of the parallelogram of the cylindrical domain element in the direction within the range.
次に本発明を詳しく説明する。Next, the present invention will be explained in detail.
一般にガドリニウム●ガリウム●ガーネツト（以下ＧＧ
Ｇと称す）の如きＲＧＧは強い臂開性を持たないと考え
られている。Generally, gadolinium ● gallium ● garnet (hereinafter referred to as GG)
It is believed that RGG such as G) does not have strong arm-opening properties.
しかしＧＧＧの（１１１）ウエ・・−に関する本発明者
の研究の結果次の事が明らかになつた。即ち（１１１）
ウエハ一に集中圧力をかけてこのウエハ一を割つた場合
、その割れ痕は〔１１２〕あるいは〔１２１〕あるいは
〔２１１〕に垂直な方向（すなわち〔０１１〕あるいは
〔１０１〕あるいは〔０ｉ０から２度の範囲内に８０ｑ
６の割合に、さらに１０度の範囲内には９５％の割合に
あることが明らかとなつた。さらに（１１１）ウエ・・
一に刻線がある場合にもこの刻線が充分に深く且つ鋭く
ないと、ウエハ一の刻線の裏より刻線に沿つて圧力をか
けても、刻線通りには割れずに基板の〔１１２〕若しく
は〔１２１〕若しくは〔２１１〕方向に垂直な方向へ割
れ目が走る。以上の事実よりＧＧＧの（１１１）ウエハ
一には〔Ｉｉ２〕〔１２１〕及び〔２１１〕方向に垂直
な方向に勢開性のあることが明らかになつた。従つて円
筒磁区素子チツプの端辺を〔Ｉｉ２］若しくは〔１２１
〕若しくは〔２１１〕に垂直にしておくと、端辺に平行
なチツプ切り離しの為の刻線に沿つてこの（１１１）Ｇ
ＧＧウエハ一よりなる円筒磁区材料は割れ易くなる。Ｇ
ＧＧ以外のＲＧＧもＧＧＧとの結晶対称性、機械的強度
の等しさより全く同様である。換言すれば、このような
構成をもつ円筒磁区素子チツプでは、そのチツプ割り出
しの歩留りの向上が見られ、ひいてはスクライバ一のダ
イアモンド針先の寿命を延ばすことにつながる。本発明
を実施例により更に詳細に説明する。However, as a result of the present inventor's research on the (111) wafer of GGG, the following has become clear. That is (111)
If concentrated pressure is applied to wafer 1 and wafer 1 is cracked, the crack marks will be in the direction perpendicular to [112] or [121] or [211] (i.e. 2 degrees from [011] or [101] or [0i0). 80q within the range of
It has become clear that 95% of the angles are within a range of 10 degrees. Furthermore (111) ue...
Even if there is a score line on the first wafer, if this score line is not deep and sharp enough, even if pressure is applied along the score line from the back of the first wafer, the substrate will not crack along the score line. The crack runs in a direction perpendicular to the [112], [121], or [211] direction. From the above facts, it has become clear that the GGG (111) wafer has a tendency to open in the direction perpendicular to the [Ii2] [121] and [211] directions. Therefore, the edge of the cylindrical magnetic domain element chip is [Ii2] or [121
] or perpendicular to [211], the (111)
The cylindrical magnetic domain material made of GG wafers becomes susceptible to cracking. G
RGG other than GG is completely similar to GGG due to its crystal symmetry and mechanical strength. In other words, with the cylindrical magnetic domain element chip having such a configuration, the yield of chip indexing is improved, which in turn leads to extending the life of the diamond tip of the scriber. The present invention will be explained in more detail with reference to Examples.
第１図は第１の実施例を説明する図である。矩形状をな
す円筒磁区素子チツプ５の端辺が、ＲＧＧの（１１１）
ウエハ一を基板とする円筒磁区材料１において矢印３で
示される３つの〔１１２〕〔Ｉ２ｉ〕及び〔２１１〕方
向の内の任意の一方向に平行及び垂直になるように設け
られた円筒磁区素子チツプ５は前記〔Ｉｉ２〕〔１２１
〕及び〔２１１〕のうちの一つに垂直な方向をもつ刻線
２で分割され夫々独立な円筒磁区素子となる。この場合
ＲＧＧの（１１１）ウエハ一に前記〔１１２〕〔１２１
〕及び〔２１１〕のうちの一つの方向を示すための端面
研摩部分４が設けられていると、本発明の円筒磁区素子
の製作に便利であることはいうまでもない。第２図は本
発明の第２の実施例を示す。FIG. 1 is a diagram illustrating a first embodiment. The end side of the rectangular cylindrical magnetic domain element chip 5 is (111) of RGG.
A cylindrical magnetic domain element provided in a cylindrical magnetic domain material 1 having a wafer 1 as a substrate so as to be parallel and perpendicular to any one of the three [112] [I2i] and [211] directions indicated by arrows 3. Chip 5 is the above [Ii2] [121
] and [211], each having an independent cylindrical magnetic domain element. In this case, the above [112] [121] is placed on the (111) wafer of RGG.
It goes without saying that it is convenient to manufacture the cylindrical magnetic domain element of the present invention if the end face polished portion 4 is provided to indicate one of the directions of [211] and [211]. FIG. 2 shows a second embodiment of the invention.
本実施例では第１の実施例と異つて円筒磁区材料である
ＲＧＧの（１１１）ウエハ一１の矢印３で、示される〔
Ｉｌ２〕〔１２１〕及び〔２１１〕方向の内の任意の一
方向に垂直な方向を表わす研摩端面４を設け、この端面
を基準にしてそれに平行な方向にその端辺にもつ円筒磁
区素子チツプ５を切り離すための刻線２が第１の実施例
の場合と同様に設けられている。以上の実施例において
は、円筒磁区素子チツプの形伏が矩形の場合Ｋついて説
明したが、平行四辺形についてもその端辺が基板の〔１
１２〕〔１２１〕及び〔２１１〕の垂直方向のいずれか
１つより５度以内の方向にあるものは本発明に含まれ、
本発明の効果を呈することは明らかである。In this example, unlike the first example, a (111) wafer 1 of RGG, which is a cylindrical magnetic domain material, is shown by an arrow 3.
Il2] A cylindrical magnetic domain element chip 5 having a polished end face 4 representing a direction perpendicular to any one of the [121] and [211] directions, and having a cylindrical magnetic domain element chip 5 on its edge in a direction parallel to this end face as a reference. A score line 2 for separating the parts is provided in the same way as in the first embodiment. In the above embodiments, the case where the shape of the cylindrical magnetic domain element chip is rectangular has been explained, but the edge of the parallelogram is also
12] Those located within 5 degrees from any one of the vertical directions of [121] and [211] are included in the present invention,
It is clear that the effects of the present invention are exhibited.
以上説明したように本発明に従うならば、ＲＧＧ単結晶
の（１１１）を表面とする薄片を基板にもつ円筒磁区素
子の製作に関して、円筒磁区素子チツプの歩留りを向上
させ、且つスクライバ一のダイアモンド針端の寿命を延
長させることが可能となる。As explained above, according to the present invention, when manufacturing a cylindrical magnetic domain element having a thin piece of RGG single crystal (111) as a substrate, the yield of the cylindrical magnetic domain element chip can be improved, and the diamond needle of the scriber can be improved. It becomes possible to extend the life of the end.
第１図及び第２図は本発明の実施例を示す図である。
１・・・・・・ＲＧＧ単結晶の（１１１）ウエハ一 ２
・・・・・・刻線、３・・・・・・ＲＧＧ単結晶の〔１
１２〕〔１２１〕〔２１１〕方向、４・・・・・・端面
研摩面、５・・・・・・円筒磁区素子の単位プロツク。FIGS. 1 and 2 are diagrams showing embodiments of the present invention. 1... RGG single crystal (111) wafer 2
...Screen line, 3... RGG single crystal [1
12] [121] [211] direction, 4... End face polished surface, 5... Unit block of cylindrical magnetic domain element.
Claims (1)
面とする薄片を基板とする円筒磁区を保持し得る円磁区
材料と、該材料上に前記基板の〔＠１＠＠１＠２〕若し
くは〔＠１＠２＠１＠〕若しくは〔２＠１＠＠１＠〕方
向に垂直な方向に少なくとも一つの端辺を持つ完結した
まとまりを示す平行四辺形状のチップを形成するように
設けられた導体パターン及び円筒磁区転送用軟磁性体パ
ターン、又は前記パターンのいずれか一方とより構成さ
れることを特徴とする円筒磁区素子。[Scope of Claims] 1. A circular magnetic domain material capable of holding a cylindrical magnetic domain whose substrate is a thin piece of rare earth gallium garnet single crystal (111); 2] or [@1@2@1@] or [2@1@@1@] to form a parallelogram-shaped chip showing a complete unit with at least one edge in a direction perpendicular to the direction. A cylindrical magnetic domain element comprising a conductor pattern provided, a soft magnetic material pattern for cylindrical magnetic domain transfer, or one of the above patterns.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP51017244A JPS5915163B2 (en) | 1976-02-19 | 1976-02-19 | Cylindrical domain element |
| DE19772706903 DE2706903A1 (en) | 1976-02-19 | 1977-02-17 | Bubble domain chip prodn. - on a substrate comprising a disc of rare earth-gallium-garnet single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP51017244A JPS5915163B2 (en) | 1976-02-19 | 1976-02-19 | Cylindrical domain element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS52100197A JPS52100197A (en) | 1977-08-22 |
| JPS5915163B2 true JPS5915163B2 (en) | 1984-04-07 |
Family
ID=11938530
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP51017244A Expired JPS5915163B2 (en) | 1976-02-19 | 1976-02-19 | Cylindrical domain element |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPS5915163B2 (en) |
| DE (1) | DE2706903A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6154570A (en) * | 1984-08-23 | 1986-03-18 | Nippon Electric Ind Co Ltd | Bar code reader using light source diffusing filter |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4317700A (en) * | 1980-08-20 | 1982-03-02 | Rockwell International Corporation | Method of fabrication of planar bubble domain device structures |
-
1976
- 1976-02-19 JP JP51017244A patent/JPS5915163B2/en not_active Expired
-
1977
- 1977-02-17 DE DE19772706903 patent/DE2706903A1/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6154570A (en) * | 1984-08-23 | 1986-03-18 | Nippon Electric Ind Co Ltd | Bar code reader using light source diffusing filter |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2706903A1 (en) | 1977-08-25 |
| JPS52100197A (en) | 1977-08-22 |
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