JPS59145779A - 光化学蒸着装置 - Google Patents

光化学蒸着装置

Info

Publication number
JPS59145779A
JPS59145779A JP1877683A JP1877683A JPS59145779A JP S59145779 A JPS59145779 A JP S59145779A JP 1877683 A JP1877683 A JP 1877683A JP 1877683 A JP1877683 A JP 1877683A JP S59145779 A JPS59145779 A JP S59145779A
Authority
JP
Japan
Prior art keywords
electrodes
discharge
space
plasma
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1877683A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6150151B2 (enExample
Inventor
Shinji Sugioka
晋次 杉岡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ushio Denki KK
Ushio Inc
Original Assignee
Ushio Denki KK
Ushio Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ushio Denki KK, Ushio Inc filed Critical Ushio Denki KK
Priority to JP1877683A priority Critical patent/JPS59145779A/ja
Publication of JPS59145779A publication Critical patent/JPS59145779A/ja
Publication of JPS6150151B2 publication Critical patent/JPS6150151B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
JP1877683A 1983-02-09 1983-02-09 光化学蒸着装置 Granted JPS59145779A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1877683A JPS59145779A (ja) 1983-02-09 1983-02-09 光化学蒸着装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1877683A JPS59145779A (ja) 1983-02-09 1983-02-09 光化学蒸着装置

Publications (2)

Publication Number Publication Date
JPS59145779A true JPS59145779A (ja) 1984-08-21
JPS6150151B2 JPS6150151B2 (enExample) 1986-11-01

Family

ID=11981031

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1877683A Granted JPS59145779A (ja) 1983-02-09 1983-02-09 光化学蒸着装置

Country Status (1)

Country Link
JP (1) JPS59145779A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6156281A (ja) * 1984-08-25 1986-03-20 Yasuo Tarui 成膜方法
US5650013A (en) * 1984-11-26 1997-07-22 Semiconductor Energy Laboratory Co., Ltd. Layer member forming method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6156281A (ja) * 1984-08-25 1986-03-20 Yasuo Tarui 成膜方法
US5650013A (en) * 1984-11-26 1997-07-22 Semiconductor Energy Laboratory Co., Ltd. Layer member forming method

Also Published As

Publication number Publication date
JPS6150151B2 (enExample) 1986-11-01

Similar Documents

Publication Publication Date Title
JPS6150150B2 (enExample)
JPS59159167A (ja) アモルフアスシリコン膜の形成方法
JPH07101685B2 (ja) マイクロ波プラズマ処理装置
TW200307314A (en) Method of and apparatus for manufacturing semiconductor device
JPH0387372A (ja) 堆積膜形成方法
TWI291842B (en) Plasma source coil for generating plasma and plasma chamber using the same
JPS59145779A (ja) 光化学蒸着装置
US4500565A (en) Deposition process
KR920703871A (ko) 마이크로파-발생 기체-지지 플라즈마 상태에서의 기판 처리장치
JPS60117711A (ja) 薄膜形成装置
JPH0750701B2 (ja) 放電反応装置
JPH0346172B2 (enExample)
JPS6150152B2 (enExample)
JPS60218474A (ja) 成膜方法
KR20170139759A (ko) 균일한 가스 분배를 위한 가스 분배 플레이트를 포함하는 플라즈마 챔버
JPH0627345B2 (ja) プラズマプロセス装置
JPS59145780A (ja) 光化学蒸着装置
JPH02213468A (ja) 反応性スパツタリング装置
JPS6043487A (ja) 薄膜の形成方法および形成装置
JPH09283449A (ja) プラズマ化学蒸着装置
JPS60212224A (ja) 光化学反応装置
JPS6254083A (ja) 膜の形成方法
JPS60212222A (ja) 光化学反応装置
JPS6230880A (ja) プラズマｃｖｄ法による堆積膜形成装置
JPS60209246A (ja) 光化学反応装置