JPS59143376A - 光起電力装置の製造方法 - Google Patents

光起電力装置の製造方法

Info

Publication number
JPS59143376A
JPS59143376A JP58017747A JP1774783A JPS59143376A JP S59143376 A JPS59143376 A JP S59143376A JP 58017747 A JP58017747 A JP 58017747A JP 1774783 A JP1774783 A JP 1774783A JP S59143376 A JPS59143376 A JP S59143376A
Authority
JP
Japan
Prior art keywords
layer
electrode layer
tip
region
photoelectric conversion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58017747A
Other languages
English (en)
Japanese (ja)
Other versions
JPS649745B2 (cg-RX-API-DMAC10.html
Inventor
Yasuo Kishi
岸　靖雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd, Sanyo Denki Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP58017747A priority Critical patent/JPS59143376A/ja
Publication of JPS59143376A publication Critical patent/JPS59143376A/ja
Publication of JPS649745B2 publication Critical patent/JPS649745B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)
JP58017747A 1983-02-04 1983-02-04 光起電力装置の製造方法 Granted JPS59143376A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58017747A JPS59143376A (ja) 1983-02-04 1983-02-04 光起電力装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58017747A JPS59143376A (ja) 1983-02-04 1983-02-04 光起電力装置の製造方法

Publications (2)

Publication Number Publication Date
JPS59143376A true JPS59143376A (ja) 1984-08-16
JPS649745B2 JPS649745B2 (cg-RX-API-DMAC10.html) 1989-02-20

Family

ID=11952334

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58017747A Granted JPS59143376A (ja) 1983-02-04 1983-02-04 光起電力装置の製造方法

Country Status (1)

Country Link
JP (1) JPS59143376A (cg-RX-API-DMAC10.html)

Also Published As

Publication number Publication date
JPS649745B2 (cg-RX-API-DMAC10.html) 1989-02-20

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