JPS59141268A - Controlled rectifying device - Google Patents

Controlled rectifying device

Info

Publication number
JPS59141268A
JPS59141268A JP1658983A JP1658983A JPS59141268A JP S59141268 A JPS59141268 A JP S59141268A JP 1658983 A JP1658983 A JP 1658983A JP 1658983 A JP1658983 A JP 1658983A JP S59141268 A JPS59141268 A JP S59141268A
Authority
JP
Japan
Prior art keywords
thyristor
auxiliary
current
main
main thyristor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1658983A
Other languages
Japanese (ja)
Inventor
Jiyunji Hinatsu
日夏　順次
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP1658983A priority Critical patent/JPS59141268A/en
Publication of JPS59141268A publication Critical patent/JPS59141268A/en
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7424—Thyristor-type devices, e.g. having four-zone regenerative action having a built-in localised breakdown/breakover region, e.g. self-protected against destructive spontaneous, e.g. voltage breakover, firing

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Conversion In General (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To prevent the concentration of re-applied currents, and to obviate the breakdown of a main thyristor by connecting cathodes in the main thyristor and an auxiliary thyristor by an inductive element and flowing currents from the auxiliary thyristor on the failure of commutation. CONSTITUTION:Cathode electrodes in an auxiliary thyristor 12 and a main thyristor 11 are connected by an inductive element 6 consisting of an element or a substance, an inductance component therein is large. When the life time of carriers at a low current level of the auxiliary thyristor section 12 is made previously larger than that of the main thyristor section 11, commutation fails from the auxiliary thyristor section 12 when applying re-applied voltage, high voltage is applied to the inductance element 6, high currents flow into a gate in the main thyristor 11 through a resistance region 7, and the main thyristor 11 is turned ON. Accordingly, sufficient resistance is obtained even to the large di/dt of re-applied currents 18 in the main thyristor 11.

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明は、主サイリスタと補助サイリスタとからなる制
御整流素子に関し、両サイリスタのカソード電極間をイ
ンダクタンス成分の大きな素子又は物質で接続し、更に
補助サイリスタでターン・オフ失敗するようにしておく
ことにより、転流失敗の電流集中による主サイリスタの
破壊を防止するようにしたものである。Detailed Description of the Invention [Technical Field of the Invention] The present invention relates to a controlled rectifying element consisting of a main thyristor and an auxiliary thyristor, in which the cathode electrodes of both thyristors are connected by an element or substance with a large inductance component, and the auxiliary thyristor is By setting the thyristor to fail in turn-off, it is possible to prevent the main thyristor from being destroyed due to current concentration due to failed commutation.

〔従来技繭〕[Conventional technique cocoon]

一般にサイリスタにおいて、サイリスタをターン・オフ
する、即ちオン状態から阻止状態に移行させるためには
、逆バイアス畦圧をある一定期間以上印加することによ
りこれを行なうことができ、これを転流という。この際
、逆バイアス電圧をかける時間が短かければ、阻止状態
に移行できず、再印加″畦圧を印加しようとすると、再
印加電流が流れることになり、これを転流失敗という。Generally, in a thyristor, in order to turn off the thyristor, that is, to move the thyristor from an on state to a blocking state, this can be done by applying a reverse bias ridge pressure for a certain period or more, and this is called commutation. At this time, if the time for applying the reverse bias voltage is too short, it will not be possible to shift to the blocking state, and when an attempt is made to reapply the ridge pressure, a reapplying current will flow, and this is called a commutation failure.

この転流が可能となる最小の逆バイアス畦圧の印加時間
をターン・オフ時間（【ｑ）と呼ぶ。The application time of the minimum reverse bias ridge pressure that enables this commutation is called the turn-off time ([q)].

ところで一方補助サイリスタつきサイリスタ構造は、タ
ーン・オン時のｄｉ／ｄｔ耐量を向上させるために工夫
されたものである。On the other hand, the thyristor structure with an auxiliary thyristor is devised to improve the di/dt tolerance at turn-on.

しかしながら、転流失敗の原流れる再印加゛電流に対し
ては、補助サイリスタは作用せず、主サイリスタにおい
て再印加電流が流れ始める。したがって、再印加電流に
対するｄ　ｉ／ｄ　を耐量は、電流がン時のｄ　ｉ／ｄ
　を耐量に比較して非常に弱いものとなる。However, the auxiliary thyristor does not act on the reapplying current that flows when commutation fails, and the reapplying current begins to flow in the main thyristor. Therefore, the withstand capacity of d i/d for reapplying current is d i/d when the current is turned on.
It is very weak compared to the tolerable amount.

次に以上のことを第３図を用いてより詳細に説明する。Next, the above will be explained in more detail using FIG.

ここで％３図はサイリスタがオン状態から転流する場合
の電圧、電流の時間的変化を示し、図において、ｄ４は
オン電圧、叫は逆回復電流、Ｕωは逆バイアス電圧、Ｕ
ηは再印加電圧、（旧は転流失敗した場合の再印加電流
、１ｌｉ１はオン電流である。Here, the %3 diagram shows the temporal changes in voltage and current when the thyristor commutates from the on state. In the diagram, d4 is the on voltage, y is the reverse recovery current, Uω is the reverse bias voltage, and U
η is the reapplying voltage, (old is the reapplying current when commutation fails, and 1li1 is the on-current.

サイリスタにおいては、％３図＋ａｌに示すように一定
期間逆バイアス電圧叫を印加して、オン状態で蓄積され
ている電荷を排出したのち再印加電圧ｕ′？）を印加す
ることにより阻止状態に移行できる。In the thyristor, as shown in Figure 3+al, a reverse bias voltage is applied for a certain period of time to discharge the charge accumulated in the on state, and then the re-applied voltage u'? ) can shift to the blocking state.

ところが、この電荷の排出が不十分なうちに、すなわち
、逆バイアス期間がターン・オフ時間（ｑ　より短いう
ちに再印加電圧ｄ７）を印加すると阻止状態に移行でき
ず、第３図ｆｂ）に示すようｌど再印加電流ｕ８１が流
れてしまう。However, if the reapplying voltage d7 is applied before the discharge of this charge is insufficient, that is, while the reverse bias period is shorter than the turn-off time (q), the blocking state cannot be achieved, and the state shown in Fig. 3 fb) is applied. As shown, the re-applying current u81 flows.

とくに、ターン・オフ時間【９　より少し短い時間逆バ
イアス電圧１６１を印加したのち、再印加電圧Ｕηを印
加した場合、再印加電流１秒が流れるが、電荷排出の不
均一等により、ある条件では再印加電流ＩＩａｌハ極め
て集中しやすｈ状況にある。In particular, when the reverse bias voltage 161 is applied for a time slightly shorter than the turn-off time [9] and then the re-applying voltage Uη is applied, a re-applying current of 1 second flows, but under certain conditions due to non-uniform charge discharge, etc. The reapplying current IIal is in a situation where it is extremely easy to concentrate.

ところでサイリスタにおいてターン・オン時の電流集中
を改善するものとして、主サイリスタのアノードとゲー
ト闇ｉｔ補助サイリスタを設けた補助サイリスタフきサ
イリスタが採用されており、これにより大きなｄｉ／ｄ
ｔ＃量のものが得られている。By the way, in order to improve current concentration during turn-on in thyristors, a thyristor with an auxiliary thyristor is used, which has an anode of the main thyristor and an auxiliary thyristor with a gate.
t# amount has been obtained.

しかしながらこの補助サイリスタ付サイリスタでは、補
助サイリスタに流れるオン電流は、ターン・オン後主サ
イリスタが十分ターン・オンすれば極めて小さいものと
なってしまう。このような状況では、第３図ｔａ）に示
す逆バイアス電圧（旧を印加して、再印加゛電圧Ｕηを
かけた場合、補助サイリスタは主サイリスタよりも蓄積
電荷が少ないため、再印加電流は補助サイリスタには流
れず、主サイリスタの一部に流れてしまう。However, in this thyristor with an auxiliary thyristor, the on-current flowing through the auxiliary thyristor becomes extremely small if the main thyristor is sufficiently turned on after turning on. In such a situation, if the reverse bias voltage shown in Figure 3 (ta) is applied and the re-applied voltage Uη is applied, the re-applied current will be It does not flow to the auxiliary thyristor, but flows to a part of the main thyristor.

従って、この補助サイリスタつきサイリスタは、ターン
・オン時、補助サイリスタからターン・オ（４） ン電流が流れ始め、この電流がゲート周長のより長い主
サイリスタをターン・オンさせることにより、大きなｄ
　ｉ／ｄ　を耐量が得られるものであったが。Therefore, when this thyristor with an auxiliary thyristor is turned on, a turn-on current begins to flow from the auxiliary thyristor, and this current turns on the main thyristor, which has a longer gate circumference, resulting in a large d
However, it was possible to obtain a tolerable amount of i/d.

転流失敗時には再印加電流（］８１は補助サイリスタか
らではなく、主サイリスタから直接流れてしまい、この
′電流が集中した場合、ターン・オン時のような大きな
ｄ　ｉ／ｄ　１耐量が得られないこととなる。When commutation fails, the re-applied current (81) flows directly from the main thyristor, not from the auxiliary thyristor, and when this current is concentrated, a large di/d 1 withstand capability like that at turn-on cannot be obtained. There will be no.

これはとりもなおさず、Ｍ助すイリスタに流れるターン
・オン電流が、主サイリスタがターン・オンした後非常
に微小になるか、あるいは保持（流以丁となって補助サ
イリスタが切れてしまうため、ターン・オン時と異なっ
て、補助サイリスタから電流が流れ出して行かないため
である。This is because the turn-on current that flows through the auxiliary thyristor becomes extremely small after the main thyristor turns on, or the auxiliary thyristor is cut off due to a hold-on current. This is because current does not flow out of the auxiliary thyristor, unlike when it is turned on.

〔発明の概要〕[Summary of the invention]

この発明は上記のような従来のものの欠点を除去するた
めになされたもので、補助サイリスタのカソード電極と
主サイリスタのカソード電極とを適切なるインダクタン
ス成分をもつ素子又は物質で接続し、転流失敗時の再印
加電流に対しても、補助サイリスタから電流が流れ始め
るようにすることにより、再印加電流の集中を防ぎ、主
サイリスタの破壊を防止することのできる制御整流素子
を提供することを目的としている。This invention was made in order to eliminate the drawbacks of the conventional ones as described above, and it connects the cathode electrode of the auxiliary thyristor and the cathode electrode of the main thyristor with an element or substance having an appropriate inductance component, thereby preventing commutation failure. The purpose of the present invention is to provide a controlled rectifier element that can prevent the concentration of reapplied current and prevent the destruction of the main thyristor by causing the current to start flowing from the auxiliary thyristor even when the reapplied current is applied at the same time. It is said that

〔発明の実施例〕[Embodiments of the invention]

以下、この発明の一実施例をｍ−について説明する。 Hereinafter, one embodiment of the present invention will be described for m-.

第１図は本発明の一実施例による制御整流素子を示し、
図において、１１）は主サイリスタのカソード電極、（
２）は主サイリスタのＮＥ　層、（３）はＰＢ　層、（
４）はＮＢ層、＋５）はＰＢ層、（８）は補助サイリス
タ電極、（９）は補助サイリスタのＮ８層、ＬｌＧはゲ
ート電極である。また＋７１　Ｆｉ補助サイリスタと主
サイリスタの抵抗領域、（６）はインダクタンス成分の
大きな素子又は物質からなる誘導性素子、Ｕυは主サイ
リスタ、ｕ２は補助サイリスタ、ｕ謙は外部インピーダ
ンス、Ｖｃｃ　ｒｉ’４１１電圧テアル。FIG. 1 shows a controlled rectifier according to an embodiment of the present invention,
In the figure, 11) is the cathode electrode of the main thyristor, (
2) is the NE layer of the main thyristor, (3) is the PB layer, (
4) is the NB layer, +5) is the PB layer, (8) is the auxiliary thyristor electrode, (9) is the N8 layer of the auxiliary thyristor, and LlG is the gate electrode. In addition, +71 Fi is the resistance area of the auxiliary thyristor and the main thyristor, (6) is an inductive element made of an element or substance with a large inductance component, Uυ is the main thyristor, u2 is the auxiliary thyristor, u is the external impedance, and Vcc ri'411 voltage Teal.

第２図は本実施例の動作を説明するための本実施例装置
の等価回路図であり、図において第１図と同−符’ｉ＋
＃′ｉ同一のものを示す。FIG. 2 is an equivalent circuit diagram of the device of this embodiment for explaining the operation of this embodiment, and in the figure, the same symbol as in FIG.
#'i indicates the same thing.

本実施例は第１図に見られるように、補助サイリスク（
１２１と主サイリスタ＋１１１のカソード峨極間を適切
なインダクタンス成分の素子又は物質で接続したもので
あり、これにより補助サイリスタｕ２１がターン・オン
した後も緩やかな電流変化に対しては両ナイリスタ１１
１）　ＩＩりは短絡状態にあると同様であり、主サイリ
スタｔｉｌｌがターン・オンした後も補助サイリスタｕ
４にも主サイリスタｕＤの電流ｉ１　　とほぼ同等の覗
流密度で電流ｉｂ　　が流れることとなる。−力木装置
のターン・オン時の動作に８いて、補助サイリスタ（１
２１に大きな電流増大が生じた場合、インダクタンス素
子（６）に大きな電圧（Ｌ−ｄｉ／ｄｔ）がかかり、こ
の電圧により主サイリスタｄ１１と補助サイリスタ０２
１間の抵抗（７）に電流が分流して主サイリスタＯＩ）
のゲート部に電流が流れ込み、主サイリスタｔｉｌｌを
ターン・オンさせることになる。As shown in FIG.
121 and the cathode terminal of the main thyristor +111 are connected by an element or material with an appropriate inductance component, so that even after the auxiliary thyristor u21 is turned on, both thyristors 11
1) II is the same as in a short-circuit condition, and even after the main thyristor till turns on, the auxiliary thyristor
4, the current ib flows with a peeking current density that is almost the same as the current i1 of the main thyristor uD. - In operation at turn-on of the strength-lifting device, the auxiliary thyristor (1
21, a large voltage (L-di/dt) is applied to the inductance element (6), and this voltage causes the main thyristor d11 and the auxiliary thyristor 02 to
Current is shunted to the resistor (7) between 1 and the main thyristor OI)
A current flows into the gate of TILL, turning on the main thyristor TILL.

したがって、本装置の補助サイリスタ（１つはターン・
オン時の大なるｄ　ｉ／ｄ　ｔに対しては通常の補助サ
イリスタと同様の動作が可能であり、ｄ　＊／ｄ　を耐
量を大幅に減じることはない。Therefore, the auxiliary thyristors of this device (one is a turn
The same operation as a normal auxiliary thyristor is possible for large d i/d t when turned on, and the withstand capability of d */d is not significantly reduced.

一方、ターン・オフ時、転流失敗する場合を考えてみる
と、主８よび補助サイリスタＵυ（１２１をインダクタ
ンス素子（６）で接続しであるので、オン状態の通常の
電流変化ではインダクタンス素子（６）にかかる電圧（
Ｌ−ｄｉ／ｄｔ）は小さく、補助サイリスタ（１２＋と
主サイリスタｕ１）には、上述のように第２図＋ａ）に
示すようにほぼ同等の′電流密度で磁流ｉ、、ｉｂ　　
が流れる。そしてこの状態で逆バイアス電圧ｔ１６１が
かかり、蓄積電荷が排出されると、第２図（ｂ）に示す
ようにこのとき排出される電流ｉｏ、ｉａの変化は、通
常のオン電流四の電流変化と同じレベルであり、このた
めインダクタンス素子（６）を介して主サイリスタ（１
１１と補助サイリスタ＠は、はぼ同様に蓄積電より長く
伐るので、転流失敗は補助サイリスタ部ｕ２から生じる
。このときの再印加電流ｕ印のｄ　ｉ／ｄ　ｔが大きけ
れば素子は破壊されやすいが、この場合Ｌ　−ｄ　ｉ／
ｄ　ｔが大きくなるため、この電圧により第２図（Ｃ）
に示すように抵抗＠域（７）を通って大きな電流ｉ・　
が補助サイリスタαりから主サイリスタ圓のゲートに流
れ込み、主サイリスタｕＤをターン・オンさせる。した
がって、ターン・オン時のとΦの補助サイリスタ叫と同
様の動作を行うため、主サイリスタｕ１１は再印加電流
叩の大きなｄ　ｉ／ｄ　ｔに対しても十分な耐量が得ら
れることとなる。On the other hand, considering the case where commutation fails at turn-off, since the main 8 and auxiliary thyristor Uυ (121) are connected by an inductance element (6), normal current changes in the on state cause the inductance element ( 6) Voltage applied to (
L-di/dt) is small, and the auxiliary thyristor (12+ and main thyristor u1) are supplied with magnetic currents i,, ib with approximately equal current densities as shown in Figure 2+a) as described above.
flows. When the reverse bias voltage t161 is applied in this state and the accumulated charges are discharged, the changes in the discharged currents io and ia at this time are the same as the normal on-current changes, as shown in FIG. 2(b). Therefore, the main thyristor (1) is connected via the inductance element (6).
Since the auxiliary thyristor 11 and the auxiliary thyristor @ operate longer than the stored electricity, the commutation failure occurs from the auxiliary thyristor part u2. If d i/d t of the re-applied current u at this time is large, the element is likely to be destroyed, but in this case L - d i/
Since d t increases, this voltage causes the voltage shown in Fig. 2 (C)
As shown in , a large current i・
flows from the auxiliary thyristor α into the gate of the main thyristor circle, turning on the main thyristor uD. Therefore, since the main thyristor u11 performs the same operation as the auxiliary thyristor scream of Φ at turn-on, a sufficient withstand capability can be obtained even against the large reapply current d i/d t.

〔発明の効果〕〔Effect of the invention〕

以上のように本発明によれば、主サイリスタと補助サイ
リスタのカソード同志を適切なるインダクタンス成分を
有する誘導性素子で接続し、転流失敗時の再印加電流に
対しても補助サイリスタから電流が流れ始めるようにし
たので、再印加電流の集中、さらには主サイリスタの破
壊を防止できる効果がある。As described above, according to the present invention, the cathodes of the main thyristor and the auxiliary thyristor are connected by an inductive element having an appropriate inductance component, and current flows from the auxiliary thyristor even when a current is reapplied when commutation fails. This has the effect of preventing concentration of re-applied current and furthermore, destruction of the main thyristor.

【図面の簡単な説明】[Brief explanation of the drawing]

ＩＡ１図は本発明の一実施例による制御金流素子の断面
図および等価回路図、第２図は第１図の素子の動作説明
図、第３図はサイリスタがオン状態から転流する場合の
電圧、電流の時間的変化を示す図である。 １１・・・主サイリスタ、１・・・カソード電ｉ、１２
・・・補助サイリスタ、８・・・補助サイリスタ磁極（
カソード電極）、６・・・インダクタンスの大きな素子
又は物質（誘導性素子）。 なお図中同一符号は同−又は相当部分を示す。 代　　理　　人　　　　　　　葛　　野　　信　　−第
１図 （ｂ） 第２図 第３図 手続補正書（自発） 特許庁長官殿 １、事件の表示　　　特願昭５８−１６５８９　　号２
、発明の名称 制御整流素子 ３、補正をする者 代表者片山仁へ部 ４、代理人 住　所　　　　東京都千代田区丸の内二丁目２番３号５
、補正の対象 明細書の特許請求の範囲の欄、及び発明の詳細な説明の
欄 ６、補正の内容 （１１明細書の特許請求の範囲を別紙の通り訂正する。 （２）明細書第１頁第１６行の「補助サイリスタ」を「
増巾ゲート補助サイリスタ（以下補助サイリスクと称す
）」に訂正する。 （３）同第２頁第１１行の［流れることになり、」を「
流れることとなる。」に訂正する。 （４）同第４頁第１３行の「極めて小さい」を「小さい
」に訂正する。 以　　　上 特許請求の範囲 （１）　　主サイリスタと、少くとも１つのＭｉ卯アニ
上補助サイリスタと、上記いずれかの、１ν４二」−補
助サイリスクのカソード電極と上記主サイリスタのカソ
ード電極との間に接続された誘導性素子とを備えたこと
を特徴とする制御整流素子。 （２）　　上記１１シＬ二１□補助サイリスタ部の低電
流レベルでのキャリアのライフタイムが主サイリスタ部
のそれより長いことを特徴とする特許請求の範囲第１項
記載の制御整流素子。Figure IA1 is a cross-sectional view and an equivalent circuit diagram of a control metal flow element according to an embodiment of the present invention, Figure 2 is an explanatory diagram of the operation of the element in Figure 1, and Figure 3 is a diagram showing the state in which the thyristor commutates from the on state. FIG. 3 is a diagram showing temporal changes in voltage and current. 11... Main thyristor, 1... Cathode electrode i, 12
... Auxiliary thyristor, 8... Auxiliary thyristor magnetic pole (
cathode electrode), 6... Element or substance with large inductance (inductive element). Note that the same reference numerals in the figures indicate the same or equivalent parts. Agent Makoto Kuzuno - Figure 1 (b) Figure 2 Figure 3 Procedural Amendment (Voluntary) Commissioner of the Japan Patent Office 1, Indication of Case Patent Application No. 16589-1982 2
, Title of the invention: Controlled rectifying element 3, Person making the amendment Representative: Hitoshi Katayama Department 4, Agent address: 2-2-3-5 Marunouchi, Chiyoda-ku, Tokyo
, the claims column of the specification to be amended, and the detailed description of the invention column 6, the content of the amendment (11 The claims of the specification are corrected as shown in the attached sheet. (2) Specification No. 1 Change “Auxiliary thyristor” in line 16 of the page to “
"Width gate auxiliary thyristor (hereinafter referred to as auxiliary thyristor)". (3) On page 2, line 11 of the same page, change “to flow,” to “
It will flow. ” is corrected. (4) On page 4, line 13, "extremely small" is corrected to "small." Claims (1) A main thyristor, at least one auxiliary thyristor, and any one of the above, between the cathode electrode of the auxiliary thyristor and the cathode electrode of the main thyristor. A controlled rectifying element, characterized in that it comprises a connected inductive element. (2) The controlled rectifier device according to claim 1, wherein the lifetime of carriers at a low current level in the auxiliary thyristor section is longer than that in the main thyristor section.

Claims (2)

【特許請求の範囲】[Claims] （１）　　主サイリスタと、少くとも１つの補助サイリ
スタと、上記いずれかの補助サイリスタのカソード電極
と上記主サイリスタのカソード電極との間に接続された
誘導性素子とを備えたことを特徴とする制御整流素子。(1) A main thyristor, at least one auxiliary thyristor, and an inductive element connected between the cathode electrode of any of the auxiliary thyristors and the cathode electrode of the main thyristor. Controlled rectifier. （２）上記補助サイリスタ部の低電流レベルでのキャリ
アのライフタイムが主サイリスタ部のそれより長いこと
を特徴とする特許ａ才の範囲第１項記載の制御整流素子
。(2) The controlled rectifier device according to item 1 of the scope of the patent, characterized in that the lifetime of carriers at low current levels in the auxiliary thyristor section is longer than that in the main thyristor section.
JP1658983A 1983-02-02 1983-02-02 Controlled rectifying device Pending JPS59141268A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1658983A JPS59141268A (en) 1983-02-02 1983-02-02 Controlled rectifying device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1658983A JPS59141268A (en) 1983-02-02 1983-02-02 Controlled rectifying device

Publications (1)

Publication Number Publication Date
JPS59141268A true JPS59141268A (en) 1984-08-13

Family

ID=11920460

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1658983A Pending JPS59141268A (en) 1983-02-02 1983-02-02 Controlled rectifying device

Country Status (1)

Country Link
JP (1) JPS59141268A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107612015A (en) * 2017-09-20 2018-01-19 华北电力大学 A kind of commutation failure of high voltage direct current system based on resistance power consumption resists device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107612015A (en) * 2017-09-20 2018-01-19 华北电力大学 A kind of commutation failure of high voltage direct current system based on resistance power consumption resists device
CN107612015B (en) * 2017-09-20 2021-01-01 华北电力大学 High-voltage direct-current system commutation failure resisting device based on resistance energy consumption

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