JPH04369489A - Failure detection circuit for gto element - Google Patents

Failure detection circuit for gto element

Info

Publication number
JPH04369489A
JPH04369489A JP17172291A JP17172291A JPH04369489A JP H04369489 A JPH04369489 A JP H04369489A JP 17172291 A JP17172291 A JP 17172291A JP 17172291 A JP17172291 A JP 17172291A JP H04369489 A JPH04369489 A JP H04369489A
Authority
JP
Japan
Prior art keywords
voltage
gto
gto element
gate
turn
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17172291A
Other languages
Japanese (ja)
Inventor
Shigetada Goto
後藤 茂忠
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP17172291A priority Critical patent/JPH04369489A/en
Publication of JPH04369489A publication Critical patent/JPH04369489A/en
Pending legal-status Critical Current

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  • Testing Of Individual Semiconductor Devices (AREA)
  • Thyristors (AREA)
  • Power Conversion In General (AREA)
  • Thyristor Switches And Gates (AREA)

Abstract

PURPOSE:To prevent thermal breakdown of an electric part in a GTO drive circuit by detecting a short circuit failure between gate cathodes of a GTO element and terminating the power of the drive circuit. CONSTITUTION:The arcless pulse peak current supplied between the gate G and the cathode K of a GTO element from a capacitor 13 during a turn-off operation is converted with CT 14 and a load resistance 16 to voltage and is detected. A comparison calculation between this detection voltage and a predetermined negative voltage Vs for comparison which absolute value is larger than the usual voltage, is performed with a comparator 17 to detect a short circuit failure in the GTO element 1.

Description

【発明の詳細な説明】[Detailed description of the invention]

【0001】0001

【産業上の利用分野】本発明は、GTO素子の故障検出
回路に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a failure detection circuit for GTO elements.

【0002】0002

【従来の技術】図3は従来のGTO素子の駆動回路を示
す回路図である。図において、1はGTO素子で、その
主回路は図示が省略されているが、例えば他のGTO素
子と直列、並列に接続されてチョッパ装置等を構成する
。GおよびKはGTO素子1のゲートおよびカソードを
示す。E1は点弧用電源、E2は逆バイアス電源を兼ね
た消弧用電源、2はオン/オフ指令入力端子、3はその
ベースが指令入力端子2に接続されたトランジスタ、4
は点弧パルスピーク電流(ハイゲートオンパルスのハイ
ゲート電流)IGMを供給するためのコンデンサ、5は
コンデンサ4の放電電流を制限するための制限抵抗、6
は定常ゲート電流を制限するための制限抵抗、7は点弧
用のトランジスタ、8はトランジスタ7のベース電流を
制限するための制限抵抗、9は所定時間幅の消弧制御パ
ルスを発生するワンショットマルチバイブレータ(OS
M)、10は逆バイアス用のトランジスタ、11はトラ
ンジスタ10のコレクタ電流を制限するための制限抵抗
、12は消弧用のトランジスタ、13は消弧パルスピー
ク電流(ハイゲートオフパルスのハイゲート電流)IG
Rを供給するためのコンデンサである。
2. Description of the Related Art FIG. 3 is a circuit diagram showing a conventional driving circuit for a GTO element. In the figure, 1 is a GTO element, and although its main circuit is not shown, it is connected in series or parallel with other GTO elements to form a chopper device or the like. G and K indicate the gate and cathode of GTO element 1. E1 is an ignition power supply, E2 is an extinguishing power supply that also serves as a reverse bias power supply, 2 is an on/off command input terminal, 3 is a transistor whose base is connected to the command input terminal 2, and 4
5 is a capacitor for supplying the ignition pulse peak current (high gate current of high gate on pulse) IGM; 5 is a limiting resistor for limiting the discharge current of capacitor 4; 6
is a limiting resistor for limiting the steady gate current, 7 is a transistor for ignition, 8 is a limiting resistor for limiting the base current of transistor 7, and 9 is a one-shot for generating an extinguishing control pulse of a predetermined time width. Multivibrator (OS
M), 10 is a transistor for reverse bias, 11 is a limiting resistor for limiting the collector current of transistor 10, 12 is a transistor for arc extinction, 13 is an arc extinction pulse peak current (high gate current of high gate off pulse) IG
This is a capacitor for supplying R.

【0003】次に動作を図4のタイムチャートをも参照
して説明する。今、指令入力端子2にオン指令が入力さ
れHレベルになったとすると、これに伴いトランジスタ
3そしてトランジスタ7がオン状態となる。この結果、
コンデンサ4に蓄積されていた電荷が制限抵抗5および
トランジスタ7を経て放電し、GTO素子1のゲートG
−カソードK間に点弧パルスピーク電流IGMを供給す
る。コンデンサ4の放電後、点弧用電源E1から電流が
供給され、この電流は制限抵抗6で制限される点弧パル
ス定常電流IG になる。なお、図4において、オン期
間のG−K出力で点線で示すVG はゲート順電圧で、
通常数ボルト以下の値である。
Next, the operation will be explained with reference to the time chart shown in FIG. Now, suppose that an ON command is input to the command input terminal 2 and becomes H level, and accordingly, the transistor 3 and the transistor 7 are turned on. As a result,
The charge accumulated in the capacitor 4 is discharged through the limiting resistor 5 and the transistor 7, and the gate G of the GTO element 1 is discharged.
- supplying an ignition pulse peak current IGM between the cathode K; After the capacitor 4 is discharged, a current is supplied from the ignition power source E1, and this current becomes an ignition pulse steady-state current IG limited by the limiting resistor 6. In addition, in FIG. 4, VG shown by the dotted line in the G-K output during the on period is the gate forward voltage,
Usually less than a few volts.

【0004】この状態で、次にオフ指令が入力されると
、指令入力端子2はLレベルに低下する。これに伴いト
ランジスタ3がオフ状態となってそのコレクタ電位が上
昇し、トランジスタ7がオフ状態になるとともにOSM
9が駆動され、消弧制御パルスを出力してトランジスタ
12を所定時間導通させコンデンサ13からGTO素子
1のゲートG−カソードK間に消弧パルスピーク電流I
GRを供給する。また、トランジスタ3のオフと同時に
トランジスタ10がオン状態となるので、消弧用電源E
2からトランジスタ10および制限抵抗11を経てGT
O素子1のゲートG−カソードK間に電流が供給され、
この電流は制限抵抗11で制限される逆バイアス電流I
GRB になる。
[0004] In this state, when an off command is input next, the command input terminal 2 falls to the L level. Along with this, transistor 3 is turned off and its collector potential rises, transistor 7 is turned off, and OSM
9 is driven, outputs an arc-extinguishing control pulse, makes the transistor 12 conductive for a predetermined period of time, and generates an arc-extinguishing pulse peak current I between the capacitor 13 and the gate G and cathode K of the GTO element 1.
Supply GR. Also, since the transistor 10 is turned on at the same time as the transistor 3 is turned off, the arc extinguishing power source E
2 to GT via transistor 10 and limiting resistor 11
A current is supplied between the gate G and cathode K of O element 1,
This current is a reverse bias current I that is limited by a limiting resistor 11.
Become GRB.

【0005】なお、図4のオフ期間に点線で示した逆電
圧の内、VGRMはゲートカソード接合のアバランシェ
電圧で、ターンオフ動作開始後TW1経過して立ち上が
りTW2経過後消滅する。VGRは消弧用電源E2から
供給された電圧、VGRB はゲート逆バイアス電圧で
、消弧用電源E2の電圧がGOT素子1の内部抵抗と制
限抵抗11とで分圧されたものである。
Note that, among the reverse voltages shown by dotted lines during the OFF period in FIG. 4, VGRM is an avalanche voltage of the gate-cathode junction, which rises after TW1 has elapsed after the start of the turn-off operation and disappears after TW2 has elapsed. VGR is the voltage supplied from the arc-extinguishing power source E2, and VGRB is the gate reverse bias voltage, which is obtained by dividing the voltage of the arc-extinguishing power source E2 by the internal resistance of the GOT element 1 and the limiting resistor 11.

【0006】[0006]

【発明が解決しようとする課題】従来のGTO素子の駆
動回路は以上のように構成されているので、GTO素子
1のゲートカソード間G−Kが短絡すると、検出手段が
設けられていないので短絡後も通電が継続して過大な電
流が流れ、電気部品を熱破壊してしまう可能性があると
いう問題点があった。
[Problem to be Solved by the Invention] Since the conventional drive circuit for the GTO element is configured as described above, if G-K between the gate and cathode of the GTO element 1 is short-circuited, the short-circuit will occur because no detecting means is provided. There was a problem in that the current continued to flow even after this, causing an excessive current to flow and potentially damaging the electrical components due to heat.

【0007】本発明は、上記のような問題点を解決する
ためになされたもので、GTO素子のゲートカソード間
の短絡故障が検出できるとともに、駆動回路の電源を遮
断し、電気部品の熱破壊を防ぐことができるGTO素子
の故障検出回路を提供することを目的としている。
The present invention has been made to solve the above-mentioned problems, and is capable of detecting a short-circuit failure between the gate and cathode of a GTO element, and also cuts off the power supply to the drive circuit and prevents thermal breakdown of electrical components. It is an object of the present invention to provide a failure detection circuit for a GTO element that can prevent this.

【0008】[0008]

【課題を解決するための手段】本発明に係るGTO素子
の故障検出回路は、GTO素子のターンオフ動作時に、
ゲートカ−ソード間に供給されるターンオフ電流に応じ
た電圧を検出する検出手段と、予め正常な最大ターンオ
フ動作時の電流を電圧に変換した値よりも大きな値を基
準値とし、その両者を比較して基準値を越えた事でGT
O素子の短絡故障とみなす比較器とを備えたものである
[Means for Solving the Problems] A failure detection circuit for a GTO element according to the present invention provides a fault detection circuit for a GTO element during a turn-off operation of a GTO element.
A detection means for detecting a voltage corresponding to the turn-off current supplied between the gate cathode and a reference value that is larger than the value obtained by converting the current during normal maximum turn-off operation into voltage is compared. GT due to exceeding the standard value
It is equipped with a comparator that considers a short-circuit failure of the O element.

【0009】[0009]

【作用】本発明においては、GTO素子のターンオフ動
作時にGTO素子に供給されるターンオフ電流を電圧に
変換して検出し、この検出電圧と予め設定した電圧を比
較電圧として比較器により比較演算を行い、検出電圧が
この比較電圧より絶対値が大きいとGTO素子の短絡故
障と判定する。
[Operation] In the present invention, the turn-off current supplied to the GTO element during the turn-off operation of the GTO element is converted into a voltage and detected, and a comparator performs a comparison operation using this detected voltage and a preset voltage as a comparison voltage. If the absolute value of the detected voltage is larger than this comparison voltage, it is determined that there is a short-circuit failure of the GTO element.

【0010】0010

【実施例】【Example】

実施例1.以下、本発明の一実施例を図について説明す
る。図1において、1ないし3およびG,K,E1,E
2は図3に示す従来例と同一であるので説明を省略する
。14はコンデンサ13ヘ流れる電流を取り出すための
CT、15はCT14で取り出した電流を一方向に流す
ためのダイオード、16はCT14で取り出した電流に
より電圧を発生させるための負荷抵抗、17は負荷抵抗
16により発生させた電圧と比較電圧VN とのは比較
演算を行う比較器、SW1は点弧用電源E1を入切する
ためのスイッチ、SW2は消弧用電源E2を入切するた
めのスイッチである。
Example 1. Hereinafter, one embodiment of the present invention will be described with reference to the drawings. In Figure 1, 1 to 3 and G, K, E1, E
2 is the same as the conventional example shown in FIG. 3, so its explanation will be omitted. 14 is a CT for taking out the current flowing to the capacitor 13, 15 is a diode for making the current taken out by CT14 flow in one direction, 16 is a load resistor for generating a voltage by the current taken out by CT14, and 17 is a load resistor. 16 is a comparator that performs comparison calculations with the comparison voltage VN, SW1 is a switch for turning on and off the ignition power source E1, and SW2 is a switch for turning on and off the arc extinguishing power source E2. be.

【0011】次に動作を図2のタイムチャートをも参照
し、特にGTO素子1の故障検出動作を中心に説明する
。指令入力端子2にオフ指令が入力されている状態でタ
ーンオフ失敗によりいわゆる素子短絡の現象が発生した
場合を想定する。即ち、ターンオフ動作開始で消弧パル
スピーク電流を電圧に変換した値VIGR が急峻に立
ち上がるが、ここでターンオフ失敗を起しGTO素子1
が破損しそのゲートG−カソードK間も短絡したとする
と、GTO素子1が健全なときに発生するアバランシェ
電圧VGRM およびこれに続く逆電圧VGR,VGR
B が発生しない。
Next, the operation will be explained with particular reference to the failure detection operation of the GTO element 1, with reference also to the time chart of FIG. Assume that a so-called element short circuit occurs due to turn-off failure while an off command is input to the command input terminal 2. That is, at the start of the turn-off operation, the value VIGR obtained by converting the extinguishing pulse peak current into a voltage rises steeply, but at this point the turn-off failure occurs and the GTO element 1
If the GTO element 1 is damaged and its gate G and cathode K are also short-circuited, the avalanche voltage VGRM and the subsequent reverse voltages VGR and VGR that occur when the GTO element 1 is healthy
B does not occur.

【0012】この結果、消弧用電源E2とコンデンサ1
3とから電流供給が続き、VIGR は増大し続けるこ
とになる。そして、比較器17に入力される検出電圧は
比較電圧VN の絶対値より大きくなり、比較器17が
動作しSW1,SW2をオフさせ駆動回路の電源を遮断
する。
As a result, the arc extinguishing power source E2 and the capacitor 1
Current supply continues from 3 and VIGR continues to increase. Then, the detected voltage input to the comparator 17 becomes larger than the absolute value of the comparison voltage VN, and the comparator 17 operates to turn off SW1 and SW2 to cut off the power to the drive circuit.

【0013】[0013]

【発明の効果】以上のように、本発明によれば、GTO
素子の消弧制御時にゲート−カソード間に供給する消弧
パルスピーク電流を電圧に変換して検出し、これと所定
の比較電圧とを比較演算してGTO素子の故障を検出す
るようにしたので、GTO素子の故障発生を直ちに検出
でき、また、駆動回路の電源を遮断し電気部品の熱破壊
を防ぐことができる。
[Effects of the Invention] As described above, according to the present invention, the GTO
During arc-extinguishing control of the element, the arc-extinguishing pulse peak current supplied between the gate and cathode is converted into voltage and detected, and this is compared with a predetermined comparison voltage to detect a failure of the GTO element. , the occurrence of a failure in the GTO element can be immediately detected, and the power to the drive circuit can be cut off to prevent thermal destruction of electrical components.

【図面の簡単な説明】[Brief explanation of drawings]

【図1】本発明の一実施例によるGTO素子の駆動回路
を示す回路図である。
FIG. 1 is a circuit diagram showing a driving circuit for a GTO element according to an embodiment of the present invention.

【図2】図1におけるGTO素子の制御時のタイムチャ
ートである。
FIG. 2 is a time chart during control of the GTO element in FIG. 1;

【図3】従来のGTO素子の駆動回路を示す回路図であ
る。
FIG. 3 is a circuit diagram showing a conventional GTO element drive circuit.

【図4】図3におけるGTO素子の制御時のタイムチャ
ートである。
FIG. 4 is a time chart when controlling the GTO element in FIG. 3;

【符号の説明】[Explanation of symbols]

1    GTO素子 2    指令入力端子 3    トランジスタ 4    コンデンサ 5    抵抗 6    抵抗 7    トラランジスタ 8    抵抗 10    トランジスタ 11    抵抗 13    コンデンサ 14    CT 14    ダイオード 16    負荷抵抗 17    比較器 E1    点弧用電源 E1    消弧用電源 SW1    スイッチ SW2    スイッチ G    ゲート K    カソード VN     比較電圧 1 GTO element 2 Command input terminal 3 Transistor 4 Capacitor 5 Resistance 6 Resistance 7 Tralangista 8 Resistance 10 Transistor 11 Resistance 13 Capacitor 14 CT 14 Diode 16 Load resistance 17 Comparator E1 Ignition power supply E1 Arc extinguishing power supply SW1 Switch SW2 Switch G Gate K Cathode VN Comparison voltage

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】  GTO素子のターンオフ動作時に、ゲ
ート−カソード間に供給されるターンオフ電流に応じた
電圧を検出する検出手段と、予め正常な最大ターンオフ
動作時の電流を電圧に変換した値よりも大きな値を基準
値とし、検出電圧と比較して基準値を越えた事でGTO
素子の短絡故障とみなす比較器とを備えたGTO素子の
故障検出回路。
1. A detection means for detecting a voltage corresponding to a turn-off current supplied between the gate and the cathode during a turn-off operation of a GTO element, and a detection means for detecting a voltage corresponding to a turn-off current supplied between a gate and a cathode, and a detection means for detecting a voltage corresponding to a turn-off current supplied between a gate and a cathode, and a voltage that is higher than a value obtained by converting the current during a normal maximum turn-off operation into a voltage. A large value is used as a reference value, and when it is compared with the detection voltage and exceeds the reference value, GTO is detected.
A failure detection circuit for a GTO element, comprising a comparator that considers a short-circuit failure of the element.
JP17172291A 1991-06-17 1991-06-17 Failure detection circuit for gto element Pending JPH04369489A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17172291A JPH04369489A (en) 1991-06-17 1991-06-17 Failure detection circuit for gto element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17172291A JPH04369489A (en) 1991-06-17 1991-06-17 Failure detection circuit for gto element

Publications (1)

Publication Number Publication Date
JPH04369489A true JPH04369489A (en) 1992-12-22

Family

ID=15928458

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17172291A Pending JPH04369489A (en) 1991-06-17 1991-06-17 Failure detection circuit for gto element

Country Status (1)

Country Link
JP (1) JPH04369489A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100321060B1 (en) * 1997-12-05 2002-03-08 이구택 Thrystor deterioration diagnosis apparatus
CN108828421A (en) * 2018-04-09 2018-11-16 厦门科华恒盛股份有限公司 A kind of thyristor malfunction detection system and method
WO2020007034A1 (en) * 2018-07-03 2020-01-09 北方工业大学 Method and system for rapidly detecting short circuit of cathode

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100321060B1 (en) * 1997-12-05 2002-03-08 이구택 Thrystor deterioration diagnosis apparatus
CN108828421A (en) * 2018-04-09 2018-11-16 厦门科华恒盛股份有限公司 A kind of thyristor malfunction detection system and method
WO2020007034A1 (en) * 2018-07-03 2020-01-09 北方工业大学 Method and system for rapidly detecting short circuit of cathode

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