CN114825270A - Overvoltage protection circuit capable of turning off thyristor and control method - Google Patents

Overvoltage protection circuit capable of turning off thyristor and control method Download PDF

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Publication number
CN114825270A
CN114825270A CN202210506234.8A CN202210506234A CN114825270A CN 114825270 A CN114825270 A CN 114825270A CN 202210506234 A CN202210506234 A CN 202210506234A CN 114825270 A CN114825270 A CN 114825270A
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China
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turn
circuit
voltage
thyristor device
thyristor
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Inventor
余占清
陈政宇
曾嵘
尚杰
许超群
王宗泽
任春频
吴锦鹏
刘佳鹏
赵彪
王蓓蓓
屈鲁
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Tsinghua University
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Tsinghua University
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
    • H02H3/20—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess voltage
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
    • H02H7/20—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for electronic equipment
    • H02H7/205—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for electronic equipment for controlled semi-conductors which are not included in a specific circuit arrangement

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Power Conversion In General (AREA)

Abstract

The invention discloses an overvoltage protection circuit capable of turning off a thyristor and a control method, belonging to the technical field of electronic circuits, wherein the protection circuit comprises: the circuit comprises a turn-off circuit, a first turn-on circuit, a second turn-on circuit and a voltage sampling module. The protection circuit of the invention realizes that when the voltage at the two ends of the anode and the cathode of the turn-off thyristor device approaches or exceeds the withstand voltage threshold value in the whole process of driving electrification/power loss, the turn-off thyristor device is triggered to be turned on, thereby avoiding overvoltage breakdown of the turn-off thyristor; the protection circuit does not change the structure of the existing turn-off thyristor drive circuit, only adds a plurality of new circuit modules, and optimizes the on-off characteristic of the original turn-off circuit when power is lost, thereby greatly reducing the cost of circuit reconstruction and simultaneously improving the reliability of action; the drive control method of the protection circuit can effectively avoid the false operation and the refusal operation of the protection circuit.

Description

Overvoltage protection circuit capable of turning off thyristor and control method
Technical Field
The invention belongs to the technical field of electronic circuits, and particularly relates to an overvoltage protection circuit capable of turning off a thyristor and a control method.
Background
An Integrated Gate Commutated Thyristor (IGCT) is a new type of switching device for high-capacity power electronic devices, and is mainly composed of a GCT chip packaged inside a tube shell and a driver integrated outside the tube shell. The IGCT driver mainly undertakes the function of receiving the communication signal of the upper control system and converting the communication signal into a voltage current signal for turning on and off the GCT chip.
In addition to IGCT, the driving circuit of other turn-off thyristor devices such as gate turn-off thyristor (GTO), super gate turn-off thyristor (SGTO), emitter commutated thyristor (ETO), integrated emitter commutated thyristor (IETO), etc. is very similar to IGCT, and the driving circuit can be improved by using the same or similar method.
The existing turn-off thyristor drive has almost no perfect anode overvoltage protection mechanism, so when the turn-off thyristor has anode overvoltage, the turn-off thyristor needs to be protected by voltage limiting devices such as MOV (metal oxide varistor) connected in parallel outside, otherwise, the devices are broken down.
The trigger switch-on of the anode overvoltage is realized by adopting a BOD device in the driving of the existing thyristor, and the thyristor can be protected from being broken down, so that the parallel MOV is not needed when the thyristor is applied. BOD devices are also available in IGCT for anode overvoltage protection because of their greatly reduced size and cost compared to MOVs.
The thyristor does not have active turn-off capability, is naturally turned off when the current crosses zero, and is not additionally processed for ensuring the reliable turn-off of the device, so that the thyristor can be smoothly turned on when the BOD acts. The turn-off thyristor drives to apply back voltage on the gate cathode during turn-off, and trigger current cannot be formed when BOD acts, so that an additional circuit needs to be added in the drive to realize the functions.
Disclosure of Invention
Aiming at the problems, the invention provides the overvoltage protection circuit capable of shutting off the thyristor and the control method thereof, which can avoid overvoltage breakdown of the shut off thyristor.
An overvoltage protection circuit for a turn-off thyristor device, comprising: the turn-off circuit is used for realizing the commutation between the gate electrode and the emitter of the turn-off thyristor device according to the control instruction; the first switching-on circuit is used for triggering the turn-off thyristor device to be switched on according to the control instruction; the second turn-on circuit is used for triggering the turn-off thyristor device to be turned on when a second voltage between the anode and the gate of the turn-off thyristor device is higher than a first voltage threshold value; and the voltage sampling module is used for acquiring a first voltage between the anode and the cathode of the turn-off thyristor device or acquiring a second voltage between the anode and the gate of the turn-off thyristor device, and sending a control instruction to the turn-off circuit and the first turn-on circuit when the first voltage is higher than a second voltage threshold value or the second voltage is higher than a third voltage threshold value.
Further, the turn-off thyristor device includes an integrated gate commutated thyristor, a gate turn-off thyristor, or a super gate turn-off thyristor.
Further, the turn-off thyristor device comprises an emitter commutated thyristor or an integrated emitter commutated thyristor.
Further, the shutdown circuit includes a first shutdown circuit; the first end of the first turn-off circuit is connected with a gate pole of the turn-off thyristor device, and the second end of the first turn-off circuit is connected with a cathode of the turn-off thyristor device; the first turn-on circuit and the first turn-off circuit are connected in parallel; the first end of the second turn-on circuit is connected with the anode of the turn-off thyristor device, and the second end of the second turn-on circuit is connected with the gate pole of the turn-off thyristor device, the first end of the first turn-on circuit and the first end of the first turn-off circuit; the first end of the voltage sampling module is connected with the first end of the second turn-on circuit and the anode of the turn-off thyristor device, the second end of the voltage sampling module is connected with the second end of the first turn-on circuit, the second end of the first turn-off circuit and the cathode of the turn-off thyristor device, or the second end of the voltage sampling module is connected with the first end of the first turn-on circuit, the first end of the first turn-off circuit and the gate of the turn-off thyristor device.
Further, the turn-off circuit comprises a second turn-off circuit and a third turn-off circuit; the first end of the third turn-off circuit is connected with the emitter of the turn-off thyristor device, the second end of the third turn-off circuit is connected with the cathode of the turn-off thyristor device, the first end of the second turn-off circuit is connected with the gate of the turn-off thyristor device, and the second end of the second turn-off circuit is connected with the cathode of the turn-off thyristor device; the first turn-on circuit and the second turn-off circuit are connected in parallel; the first end of the second turn-on circuit is connected with the anode of the turn-off thyristor device, the second end of the second turn-on circuit is connected with the gate pole of the turn-off thyristor device, the first end of the first turn-on circuit and the first end of the second turn-off circuit, the first end of the voltage sampling module is connected with the first end of the second turn-on circuit and the anode of the turn-off thyristor device, the second end of the voltage sampling module is connected with the second end of the first turn-on circuit, the second end of the second turn-off circuit and the cathode of the turn-off thyristor device, or the second end of the voltage sampling module is connected with the first end of the first turn-on circuit, the first end of the second turn-off circuit and the gate pole of the turn-off thyristor device.
Further, the second turn-on circuit includes a first BOD component; the anode of the first BOD component is connected with the anode of the turn-off thyristor device, and the cathode of the first BOD component is connected with the gate pole of the turn-off thyristor device, the first end of the first turn-on circuit and the first end of the first turn-off circuit.
Further, the second switching-on circuit comprises a first thyristor and a voltage stabilizing tube component; the cathode of the first thyristor is connected with the first end of the first turn-off circuit, the gate pole of the turn-off thyristor device and the first end of the first turn-on circuit, the anode of the first thyristor is connected with the cathode of the voltage regulator tube component, the anode of the turn-off thyristor device and the first end of the voltage sampling module, and the anode of the voltage regulator tube component is connected with the gate pole of the first thyristor.
Furthermore, the second opening circuit comprises a first valve bank to an Nth valve bank, N is a positive integer greater than 1, and each valve bank comprises a second BOD component and a voltage-sharing resistor which are connected in parallel; wherein, the second BOD subassembly negative pole in the first valves with first turn-off circuit first end, can turn off thyristor device gate pole, first circuit first end connection of opening, the second BOD subassembly positive pole in the first valves and the second BOD subassembly negative pole in the second valves are connected, the second BOD subassembly positive pole in the N-1 valves and the second BOD subassembly negative pole in the N valves are connected, the second BOD subassembly positive pole in the N valves and can turn off thyristor device positive pole, the first end connection of voltage sampling module.
Further, the second switching-on circuit comprises a third BOD component and a current-limiting resistor which are connected in series.
Furthermore, the cathode of the third BOD component is connected with the first end of the first turn-off circuit, the gate pole of the turn-off thyristor device and the first end of the first turn-on circuit, the anode of the third BOD component is connected with the first end of the current-limiting resistor, and the second end of the current-limiting resistor is connected with the anode of the turn-off thyristor device and the first end of the voltage sampling module;
or the anode of the third BOD component is connected with the anode of the turn-off thyristor device and the first end of the voltage sampling module, the cathode of the third BOD component is connected with the second end of the current-limiting resistor, and the first end of the current-limiting resistor is connected with the first end of the first turn-off circuit, the gate of the turn-off thyristor device and the first end of the first turn-on circuit.
Further, the second turn-on circuit includes a first BOD component; the anode of the first BOD component is connected with the anode of the turn-off thyristor device, and the cathode of the first BOD component is connected with the gate pole of the turn-off thyristor device, the first end of the first turn-on circuit and the first end of the second turn-off circuit.
Further, the second switching-on circuit comprises a first thyristor and a voltage stabilizing tube component; the cathode of the first thyristor is connected with the first end of the second turn-off circuit, the gate pole of the turn-off thyristor device and the first end of the first turn-on circuit, the anode of the first thyristor is connected with the cathode of the voltage regulator tube component, the anode of the turn-off thyristor device and the first end of the voltage sampling module, and the anode of the voltage regulator tube component is connected with the gate pole of the first thyristor.
Furthermore, the second opening circuit comprises a first valve bank to an Nth valve bank, N is a positive integer greater than 1, and each valve bank comprises a second BOD component and a voltage-sharing resistor which are connected in parallel;
wherein, the second BOD subassembly negative pole in the first valves and the second turn-off the first end of circuit, can turn off thyristor device gate pole, the first circuit first end connection of opening of turning on, the second BOD subassembly positive pole in the first valves and the second BOD subassembly negative pole in the second valves are connected, the second BOD subassembly positive pole in the N-1 valves and the second BOD subassembly negative pole in the N valves are connected, the second BOD subassembly positive pole in the N valves and can turn off thyristor device positive pole, the first end connection of voltage sampling module.
Further, the second switching-on circuit comprises a third BOD component and a current-limiting resistor which are connected in series.
Furthermore, the cathode of the third BOD component is connected with the first end of the second turn-off circuit, the gate pole of the turn-off thyristor device and the first end of the first turn-on circuit, the anode of the third BOD component is connected with the first end of the current-limiting resistor, and the second end of the current-limiting resistor is connected with the anode of the turn-off thyristor device and the first end of the voltage sampling module;
or the anode of the third BOD component is connected with the anode of the turn-off thyristor device and the first end of the voltage sampling module, the cathode of the third BOD component is connected with the second end of the current-limiting resistor, and the first end of the current-limiting resistor is connected with the first end of the second turn-off circuit, the gate of the turn-off thyristor device and the first end of the first turn-on circuit.
Further, the first voltage threshold is lower than the anode breakdown voltage threshold of the turn-off thyristor device, and the second voltage threshold and the third voltage threshold are both lower than the first voltage threshold.
Further, the first BOD component breakdown voltage is equal to the first voltage threshold.
Further, the breakdown voltage of the whole voltage stabilizing tube assembly is equal to the first voltage threshold value.
Furthermore, the resistance value of the voltage-sharing resistor is in direct proportion to the breakdown voltage of the second BOD component, and the sum of the breakdown voltages of the second BOD components from the first valve bank to the Nth valve bank is equal to the first voltage threshold.
Further, the third BOD component breakdown voltage is equal to the first voltage threshold.
The embodiment of the invention also provides a control method of the overvoltage protection circuit capable of turning off the thyristor device, which comprises the following steps:
the voltage sampling module collects a first voltage between the anode and the cathode of the turn-off thyristor device or a second voltage between the anode and the gate of the turn-off thyristor device, and when the first voltage is higher than a second voltage threshold value or the second voltage is higher than a third voltage threshold value, a control instruction is sent to the turn-off circuit and the first turn-on circuit;
the turn-off circuit realizes the commutation between the gate electrode and the emitter of the turn-off thyristor device according to the control instruction;
the first switching-on circuit triggers the turn-off thyristor device to be switched on according to the control instruction;
and the second turn-on circuit triggers the turn-off thyristor device to turn on when a second voltage between the anode and the gate of the turn-off thyristor device is higher than the first voltage threshold value.
Further, the turn-off thyristor device includes an integrated gate commutated thyristor, a gate turn-off thyristor, or a super gate turn-off thyristor, and the turn-off circuit includes a first turn-off circuit.
Further, the turn-off thyristor device comprises a turn-off thyristor device comprising an emitter commutated thyristor or an integrated emitter commutated thyristor, and the turn-off circuit comprises a second turn-off circuit and a third turn-off circuit.
Further, the control method of the overvoltage protection circuit is used for the following working conditions:
under a first working condition, the first turn-off circuit, the first turn-on circuit and the voltage sampling module are all electrified;
under a second working condition, the first turn-off circuit is not electrified, and the first turn-on circuit and the voltage sampling module are electrified;
under a third working condition, the first turn-off circuit and the first turn-on circuit are not electrified, and the voltage sampling module is electrified;
and under the fourth working condition, the first turn-off circuit, the first turn-on circuit and the voltage sampling module are all uncharged.
Further, in the first working condition, when the voltage sampling module detects that the first voltage is higher than the second voltage threshold or detects that the second voltage is higher than the third voltage threshold, the first turn-off circuit is controlled to remove the back voltage, meanwhile, the voltage sampling module controls the first turn-on circuit to inject a current trigger signal to the gate pole of the turn-off thyristor device, then the turn-off thyristor device is triggered to turn on, the second voltage between the anode and the gate pole of the turn-off thyristor device does not exceed the first voltage threshold, and the second turn-on circuit does not act.
Further, in a second working condition, when the voltage sampling module detects that the first voltage is higher than a second voltage threshold value, or detects that the second voltage is higher than a third voltage threshold value, the first turn-off circuit does not act; and simultaneously, the voltage sampling module controls the first switching-on circuit to inject a current trigger signal to the gate pole of the turn-off thyristor device, then the turn-off thyristor device is triggered to be switched on, a second voltage between the anode and the gate pole of the turn-off thyristor device does not exceed a first voltage threshold, and the second switching-on circuit does not act.
Further, in a third working condition, when the voltage sampling module detects that the first voltage is higher than the second voltage threshold value or detects that the second voltage is higher than the third voltage threshold value, the first turn-off circuit and the first turn-on circuit do not act, and at this time, the first turn-off circuit cannot apply back voltage; when the second voltage exceeds the first voltage threshold, the second turn-on circuit acts and generates a current trigger signal to trigger the turn-off thyristor device to turn on.
Furthermore, in a fourth working condition, the first turn-off circuit, the first turn-on circuit and the voltage sampling module do not act, and when the second voltage exceeds the first voltage threshold, the second turn-on circuit acts and generates a current trigger signal to trigger the turn-off thyristor device to be turned on.
Further, the control method of the overvoltage protection circuit is used for the following working conditions:
under a fifth working condition, the first switching-on circuit, the voltage sampling module, the second switching-off circuit and the third switching-off circuit are all electrified;
in a sixth working condition, the first turn-on circuit is not electrified, and the voltage sampling module, the second turn-off circuit and the third turn-off circuit are electrified;
under a seventh working condition, the voltage sampling module is electrified, and the first switching-on circuit, the second switching-off circuit and the third switching-off circuit are not electrified;
and under the eighth working condition, the first switching-on circuit, the voltage sampling module, the second switching-off circuit and the third switching-off circuit are all uncharged.
Furthermore, in a fifth working condition, when the voltage sampling module detects that the first voltage is higher than the second voltage threshold value or detects that the second voltage is higher than the third threshold value, the second turn-off circuit is controlled to be turned off, the third turn-off circuit is controlled to be turned on, the first turn-on circuit is controlled to inject a current trigger signal to the gate pole of the turn-off thyristor device, then the turn-off thyristor device is triggered to be turned on, the second voltage does not exceed the first voltage threshold value, and the second turn-on circuit does not act.
Further, in a sixth working condition, when the voltage sampling module detects that the first voltage is higher than the second voltage threshold value or detects that the second voltage is higher than the third voltage threshold value, the second turn-off circuit is controlled to be turned off, the third turn-off circuit is controlled to be turned on, the first turn-on circuit does not act, and when the second voltage exceeds the first voltage threshold value, the second turn-on circuit acts and generates a current trigger signal, and then the thyristor device can be turned off to be triggered to be turned on.
Further, in a seventh working condition, when the voltage sampling module detects that the first voltage is higher than the second voltage threshold value, or detects that the second voltage is higher than the third voltage threshold value, the second turn-off circuit, the third turn-off circuit and the first turn-on circuit do not act; when the second voltage exceeds the first voltage threshold, the second turn-on circuit acts and generates a current trigger signal, and then the thyristor device can be turned off and triggered to turn on.
Furthermore, in an eighth working condition, the first switching-on circuit, the voltage sampling module, the second switching-off circuit and the third switching-off circuit do not act, when the second voltage exceeds the first voltage threshold, the second switching-on circuit acts and generates a current trigger signal, and then the thyristor device can be switched off and triggered to be switched on.
Further, the second turn-off circuit keeps a normally-off state when power is lost; the third off circuit keeps a normal on state when power is lost; or may become conductive when the third shutdown circuit is subjected to a positive voltage during a power loss.
Further, the first voltage threshold is lower than the anode breakdown voltage threshold of the turn-off thyristor device, and the second voltage threshold and the third voltage threshold are both lower than the first voltage threshold.
The invention has the beneficial effects that:
1. the invention provides a circuit which can trigger a turn-off thyristor device to be turned on when the voltage at the two ends of an anode and a cathode of the turn-off thyristor device approaches or exceeds a withstand voltage threshold value in the whole process of driving electrification/power loss, thereby avoiding overvoltage breakdown of the turn-off thyristor.
2. The protection circuit does not change the structure of the existing turn-off thyristor drive circuit, only adds a plurality of new circuit modules, optimizes the on-off characteristic of the original turn-off circuit when power is lost, greatly reduces the cost of circuit reconstruction, and simultaneously improves the reliability of action.
3. The drive control method of the protection circuit can effectively avoid the false operation and the refusal operation of the protection circuit.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and those skilled in the art can also obtain other drawings according to the drawings without creative efforts.
Fig. 1 shows a first schematic overall structure of an overvoltage protection circuit for a turn-off thyristor device according to the invention;
fig. 2 shows a second overall schematic diagram of an overvoltage protection circuit for a turn-off thyristor device according to the invention;
fig. 3 is a schematic diagram of a first embodiment of an overvoltage protection circuit for a turn-off thyristor device according to the invention;
fig. 4 is a schematic diagram of a second embodiment of an overvoltage protection circuit for a turn-off thyristor device according to the invention;
fig. 5 is a schematic diagram of a third embodiment of an overvoltage protection circuit for a turn-off thyristor device according to the invention;
fig. 6 is a schematic diagram of a fourth embodiment of an overvoltage protection circuit for a turn-off thyristor device according to the invention;
fig. 7 is a schematic diagram of a fifth embodiment of an overvoltage protection circuit for a turn-off thyristor device according to the invention.
In the figure: 1. a turn-off thyristor device; 2. a first turn-off circuit; 3. a first turn-on circuit; 4. a second turn-on circuit; 5. a voltage sampling module; 6. a second turn-off circuit; 7. a third shutdown circuit; 11. a turn-off thyristor device anode; 12. a turn-off thyristor device cathode; 13. a gate of a turn-off thyristor device; 14. a turn-off thyristor device emitter; 21. a first capacitor; 22. a first switching element; 31. a second capacitor; 32. a trigger circuit; 41. a first BOD component; 42. a first thyristor; 43. a pressure stabilizing pipe assembly; 44. a first valve block; 45. an Nth valve bank; 441. a second BOD component; 442. a voltage-sharing resistor; 46. a third BOD component; 47. a current limiting resistor; 61. a second switching element; 71. a third switching element.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The embodiment of the invention provides an overvoltage protection circuit capable of turning off a thyristor device, which can realize the voltage at two ends of an anode and a cathode or the voltage at two ends of an anode and a gate of the thyristor device capable of being turned off in the whole process of driving electrification/power loss, and trigger the turn-off thyristor device 1 to be turned on when the voltage approaches or exceeds a withstand voltage threshold, so that overvoltage breakdown of the turn-off thyristor device 1 is avoided.
An overvoltage protection circuit capable of turning off a thyristor device comprises a turn-off circuit, a first turn-on circuit 3, a second turn-on circuit 4 and a voltage sampling module 5.
And the turn-off circuit is used for realizing the commutation between the gate electrode 13 of the turn-off thyristor device and the emitter electrode 14 of the turn-off thyristor device according to the control instruction.
It should be noted that commutation between the gate 13 of the turn-off thyristor device and the emitter 14 of the turn-off thyristor device enables the turn-off thyristor device 1 to turn off naturally.
And the first switching-on circuit 3 is used for triggering the turn-off thyristor device 1 to be switched on according to the control instruction.
And a second turn-on circuit 4 for triggering the turn-on of the turn-off thyristor device 1 when a second voltage between the anode 11 of the turn-off thyristor device and the gate 13 of the turn-off thyristor device is higher than the first voltage threshold.
The voltage sampling module 5 is configured to collect a first voltage between the anode 11 of the turn-off thyristor device and the cathode 12 of the turn-off thyristor device, or collect a second voltage between the anode 11 of the turn-off thyristor device and the gate 13 of the turn-off thyristor device, and send a control instruction to the turn-off circuit and the first turn-on circuit 3 when the first voltage is higher than a second voltage threshold or the second voltage is higher than a third voltage threshold.
It should be noted that the voltage sampling module 5 mainly collects the anode voltage, and the reference point of the anode voltage may be a gate 13 of the turn-off thyristor device or a cathode 12 of the turn-off thyristor device, which point is more convenient to be used as a reference when designing the circuit, and has no influence on the working and protection processes of the actual circuit.
The overvoltage protection circuit of the embodiment of the invention does not change the structure of the existing drive circuit of the turn-off thyristor, only adds the second turn-on circuit 4 and the voltage sampling module 5, greatly reduces the cost of circuit transformation, and simultaneously improves the reliability of action.
Specifically, the turn-off thyristor device 1 includes an Integrated Gate Commutated Thyristor (IGCT), a gate turn-off thyristor (GTO), a super gate turn-off thyristor (SGTO), an emitter commutated thyristor (ETO), or an integrated emitter commutated thyristor (IETO).
It should be noted that the turn-off circuit of the Integrated Gate Commutated Thyristor (IGCT), gate turn-off thyristor (GTO), and super gate turn-off thyristor (SGTO) drive circuit includes a first turn-off circuit 2; the turn-off circuit of the emitter commutated thyristor (ETO), integrated emitter commutated thyristor (IETO) drive circuit comprises a second turn-off circuit 6 and a third turn-off circuit 7.
The embodiment of the invention sets the overvoltage protection circuit aiming at different turn-off circuits of the turn-off thyristor device 1.
Referring to fig. 1, fig. 1 is a schematic diagram illustrating a first overall structure of an overvoltage protection circuit for a turn-off thyristor device according to the present invention.
The overvoltage protection circuit structure shown in fig. 1 is applied to an Integrated Gate Commutated Thyristor (IGCT), a gate turn-off thyristor (GTO), or a super gate turn-off thyristor (SGTO).
For example, when the voltage sampling module 5 is used to collect a first voltage between the anode 11 of the turn-off thyristor device and the cathode 12 of the turn-off thyristor device, the circuit structure is as shown in fig. 1.
Specifically, an emitter 14 of the turn-off thyristor device is connected with a cathode 12 of the turn-off thyristor device, a first end of the first turn-off circuit 2 is connected with a gate 13 of the turn-off thyristor device, and a second end of the first turn-off circuit 2 is connected with the cathode 12 of the turn-off thyristor device; the first turn-on circuit 3 is connected in parallel with the first turn-off circuit 2; a first end of the second turn-on circuit 4 is connected with the anode 11 of the turn-off thyristor device, and a second end of the second turn-on circuit 4 is connected with the gate 13 of the turn-off thyristor device, a first end of the first turn-on circuit 3 and a first end of the first turn-off circuit 2.
When the cathode 12 of the turn-off thyristor device is taken as a reference point, the first end of the voltage sampling module 5 is connected with the first end of the second turn-on circuit 4 and the anode 11 of the turn-off thyristor device, and the second end of the voltage sampling module 5 is connected with the second end of the first turn-on circuit 3, the second end of the first turn-off circuit 2 and the cathode 12 of the turn-off thyristor device.
When the gate 13 of the turn-off thyristor device is taken as a reference point, the first end of the voltage sampling module 5 is connected with the first end of the second turn-on circuit 4 and the anode 11 of the turn-off thyristor device, and the second end of the voltage sampling module 5 is connected with the first end of the first turn-on circuit 3, the first end of the first turn-off circuit 2 and the gate 13 of the turn-off thyristor device.
When the overvoltage protection circuit is powered on, the voltage sampling module 5 collects a first voltage between the anode 11 of the turn-off thyristor device and the cathode 12 of the turn-off thyristor device, or collects a second voltage between the anode 11 of the turn-off thyristor device and the gate 13 of the turn-off thyristor device, when the first voltage is higher than a second voltage threshold value or the second voltage is higher than a third voltage threshold value, and the second voltage between the anode 11 of the turn-off thyristor device and the gate 13 of the turn-off thyristor device is not higher than the first voltage threshold value, the voltage sampling module 5 controls the first turn-off circuit 2 and the first turn-on circuit 3 to correspondingly act, and the first turn-on circuit 3 triggers the turn-on of the turn-off thyristor device 1.
When the second voltage is higher than the first voltage threshold, the second turn-on circuit 4 triggers the turn-off thyristor device 1 to turn on.
When the overvoltage protection circuit loses power and the second voltage is higher than the first voltage threshold value, the second turn-on circuit 4 triggers the turn-off thyristor device 1 to turn on.
When the first turn-off circuit 2 and the first turn-on circuit 3 are electrified, the first turn-off circuit 2 applies back pressure between the gate electrode 13 of the turn-off thyristor device and the cathode 12 of the turn-off thyristor device after receiving a turn-off instruction sent by the voltage sampling module 5, and cuts off the branch circuit after receiving a turn-on instruction sent by the voltage sampling module 5; the first switching-on circuit 3 injects trigger current to the gate pole 13 of the turn-off thyristor device after receiving a switching-on command issued by the voltage sampling module 5, and cuts off the branch circuit after receiving the switching-off command.
The second turn-on circuit 4 is a turn-on circuit for realizing the overvoltage protection function, and no matter whether the first turn-off circuit 2, the first turn-on circuit 3 and the voltage sampling module 5 are electrified, when the voltage borne by the two ends of the first turn-off circuit is higher than the first voltage threshold value, the turn-on occurs, so that the purpose that the trigger current is injected from the anode 11 of the turn-off thyristor device to the gate 13 of the turn-off thyristor device to trigger the turn-off thyristor device 1 to be turned on is realized, and the overvoltage breakdown is avoided.
The first voltage threshold is lower than the breakdown voltage threshold of the anode 11 of the turn-off thyristor device, and the second voltage threshold and the third voltage threshold are both lower than the first voltage threshold.
The voltage sampling module 5 is a sampling circuit for realizing an overvoltage protection function, and when the first turn-off circuit 2 and the first turn-on circuit 3 are electrified, a control signal is generated when the first voltage is higher than the second voltage threshold value or the second voltage is higher than the third threshold value, and is input to the first turn-off circuit 2 and the first turn-on circuit 3, and the first turn-off circuit 2 and the first turn-on circuit 3 perform corresponding actions according to actual operation conditions.
Referring to fig. 2, fig. 2 is a schematic diagram of a second overall structure of an overvoltage protection circuit for a turn-off thyristor device according to the invention.
As shown in fig. 2, the embodiment of the present invention further provides an overvoltage protection circuit structure applied to an emitter commutated thyristor (ETO) or an integrated emitter commutated thyristor (IETO).
Specifically, a first end of the third turn-off circuit 7 is connected with an emitter 14 of the turn-off thyristor device, a second end of the third turn-off circuit 7 is connected with a cathode 12 of the turn-off thyristor device, a first end of the second turn-off circuit 6 is connected with a gate 13 of the turn-off thyristor device, and a second end of the second turn-off circuit 6 is connected with the cathode 12 of the turn-off thyristor device; the first turn-on circuit 3 and the second turn-off circuit 6 are connected in parallel; a first end of the second turn-on circuit 4 is connected with the anode 11 of the turn-off thyristor device, and a second end of the second turn-on circuit 4 is connected with the gate 13 of the turn-off thyristor device, a first end of the first turn-on circuit 3 and a first end of the second turn-off circuit 6.
When the gate 13 of the turn-off thyristor device is taken as a reference point, the first end of the voltage sampling module 5 is connected with the first end of the second turn-on circuit 4 and the anode 11 of the turn-off thyristor device, and the second end of the voltage sampling module 5 is connected with the second end of the first turn-on circuit 3, the second end of the second turn-off circuit 6 and the cathode 12 of the turn-off thyristor device.
When the cathode 12 of the turn-off thyristor device is taken as a reference point, the first end of the voltage sampling module 5 is connected with the first end of the second turn-on circuit 4 and the anode 11 of the turn-off thyristor device, and the second end of the voltage sampling module 5 is connected with the first end of the first turn-on circuit 3, the first end of the second turn-off circuit 6 and the gate 13 of the turn-off thyristor device.
When the second turn-off circuit 6, the third turn-off circuit 7 and the first turn-on circuit 3 are electrified, after the second turn-off circuit 6 and the third turn-off circuit 7 receive the turn-off instruction of the voltage sampling module 5, the second turn-off circuit 6 short-circuits the gate electrode 13 of the turn-off thyristor device and the cathode 12 of the turn-off thyristor device, and the third turn-off circuit 7 opens the emitter 14 of the turn-off thyristor device and the cathode 12 of the turn-off thyristor device. After the second shutdown circuit 6 and the third shutdown circuit 7 receive the turn-on instruction of the voltage sampling module 5, the second shutdown circuit 6 opens the gate electrode 13 of the turn-off thyristor device and the cathode 12 of the turn-off thyristor device, and the third shutdown circuit 7 short-circuits the emitter 14 of the turn-off thyristor device and the cathode 12 of the turn-off thyristor device. The first switching-on circuit 3 injects trigger current to the gate 13 of the turn-off thyristor device after receiving a switching-on instruction, and cuts off the branch circuit after receiving a switching-off instruction.
It should be noted that, during electrification, the closing and opening of the second shutdown circuit 6 and the third shutdown circuit 7 are controlled by the voltage sampling module 5; when the power supply is not charged, the second turn-off circuit 6 presents a normally-off characteristic, the third turn-off circuit 7 presents a normally-on characteristic, or the third turn-off circuit 7 presents a characteristic that the two ends of the voltage borne by the two ends of the three circuits.
In this embodiment, when the second turn-off circuit 6, the third turn-off circuit 7 and the first turn-on circuit 3 are electrified, the voltage sampling module 5 generates a control signal when the first voltage is higher than the second voltage threshold value, and inputs the control signal to the second turn-off circuit 6, the third turn-off circuit 7 and the first turn-on circuit 3, and the second turn-off circuit 6, the third turn-off circuit 7 and the first turn-on circuit 3 perform corresponding actions according to actual operation conditions.
The following embodiment exemplarily illustrates the overvoltage protection circuit of the turn-off thyristor device 1 according to the present invention by using the voltage sampling module 5 to collect the first voltage between the anode 11 of the turn-off thyristor device and the cathode 12 of the turn-off thyristor device.
Referring to fig. 1 and fig. 3, fig. 3 is a schematic diagram illustrating a first embodiment of an overvoltage protection circuit for a turn-off thyristor device according to the present invention.
In one embodiment, the second turn-on circuitry 4 includes a first BOD component 41.
Specifically, when the overvoltage protection circuit structure is applied to an Integrated Gate Commutated Thyristor (IGCT), a gate turn-off thyristor (GTO) or a super gate turn-off thyristor (SGTO), the anode of the first BOD component 41 is connected with the anode 11 of the turn-off thyristor device, and the cathode of the first BOD component 41 is connected with the gate 13 of the turn-off thyristor device, the first end of the first turn-on circuit 3 and the first end of the first turn-off circuit 2.
Illustratively, the first turn-off circuit 2 includes a first capacitor 21 and a first switching element 22 connected in series, and the first turn-on circuit 3 includes a second capacitor 31 and a trigger circuit 32.
It should be noted that the positions of the first capacitor 21 and the first switch element 22 may be interchanged, and the connection manner in fig. 2 is an exemplary illustration.
In the first connection mode, as shown in fig. 3, the anode of the first capacitor 21 is connected to the cathode 12 of the turn-off thyristor device and the cathode of the second capacitor 31, the first terminal of the first switch element 22 is connected to the cathode of the first capacitor 21, the second terminal of the first switch element 22 is connected to the gate 13 of the turn-off thyristor device, the second terminal of the trigger circuit 32, and the cathode of the first BOD component 41, the anode of the second capacitor 31 is connected to the first terminal of the trigger circuit 32, the anode of the first BOD component 41 is connected to the anode 11 of the turn-off thyristor device, and the voltage sampling module 5 controls the first switch element 22 and the trigger circuit 32 to operate.
In a second connection mode, the cathode of the first capacitor 21 is connected to the gate 13 of the turn-off thyristor device, the second terminal of the trigger circuit 32 and the cathode of the first BOD component 41, the anode of the first capacitor 21 is connected to the second terminal of the first switching element 22, the first terminal of the first switching element 22 is connected to the cathode 12 of the turn-off thyristor device and the cathode of the second capacitor 31, the anode of the second capacitor 31 is connected to the first terminal of the trigger circuit 32, and the anode of the first BOD component 41 is connected to the anode 11 of the turn-off thyristor device.
Specifically, after receiving the turn-off instruction, the voltage sampling module 5 controls the first switching element 22 to be closed, and the negative electrode of the first capacitor 21 is short-circuited with the gate electrode 13 of the turn-off thyristor device, so that the back voltage is applied to the gate electrode 13 of the turn-off thyristor device and the cathode 12 of the turn-off thyristor device. When receiving the turn-on instruction, the voltage sampling module 5 controls the first switching element 22 to be turned off, so that the negative electrode of the first capacitor 21 is opened with the gate 13 of the turn-off thyristor device, and the back voltage is removed.
When receiving the turn-on instruction, the trigger circuit 32 acts to inject a current trigger signal with a specific waveform into the gate 13 of the turn-off thyristor device, and triggers the turn-on of the turn-off thyristor device 1. When receiving the turn-off command, the trigger circuit 32 does not operate, and opens the positive electrode of the second capacitor 31 and the gate 13 of the turn-off thyristor device, and removes the current.
The first BOD component 41 is a BOD component with reverse voltage withstanding capability, and may be a BOD element with a fast recovery diode integrated in a package, or may be a serial connection of a discrete fast recovery diode and a BOD element, and the breakdown voltage of the first BOD component 41 is equal to the first voltage threshold.
When the second voltage between the anode 11 of the turn-off thyristor device and the gate 13 of the turn-off thyristor device is higher than the first voltage threshold, the first BOD component 41 breaks down, short-circuits the anode 11 of the turn-off thyristor device and the gate 13 of the turn-off thyristor device, and injects a short-time current pulse into the gate 13 of the turn-off thyristor device to trigger the turn-on of the turn-off thyristor device 1. It is then necessary to ensure that the first switching element 22 is open, otherwise the injected current pulse is absorbed by the first capacitor 21 and cannot be used to the desired effect.
Referring to fig. 4, fig. 4 is a schematic diagram illustrating a second embodiment of an overvoltage protection circuit for a turn-off thyristor device according to the invention.
Specifically, when the overvoltage protection circuit structure is applied to an emitter commutated thyristor (ETO) or an integrated emitter commutated thyristor (IETO), the anode of the first BOD component 41 is connected with the anode 11 of the turn-off thyristor device, and the cathode of the first BOD component 41 is connected with the gate 13 of the turn-off thyristor device, the first end of the first turn-on circuit 3, and the first end of the second turn-off circuit 6.
Illustratively, the second turn-off circuit 6 includes a second switching element 61, and the third turn-off circuit 7 includes a third switching element 71.
A first end of the third switching element 71 is connected to the emitter 14 of the turn-off thyristor device, a second end of the third switching element 71 is connected to the cathode 12 of the turn-off thyristor device, a first end of the second switching element 61 is connected to the gate 13 of the turn-off thyristor device, the cathode of the first BOD component 41 and the second end of the triggering circuit 32, the anode of the second capacitor 31 is connected to the first end of the triggering circuit 32, the cathode of the second capacitor 31 is connected to the second end of the second switching element 61 and the cathode 12 of the turn-off thyristor device, and the anode of the first BOD component 41 is connected to the anode 11 of the turn-off thyristor device.
When receiving the turn-on instruction, the trigger circuit 32 acts to inject a current trigger signal with a specific waveform into the gate 13 of the turn-off thyristor device, and the current trigger signal forms a loop through the emitter 14 of the turn-off thyristor device, the third switch element 71 and the cathode 12 of the turn-off thyristor device, thereby triggering the turn-on of the turn-off thyristor device 1. When receiving the turn-off command, the trigger circuit 32 does not operate, and opens the positive electrode of the second capacitor 31 and the gate 13 of the turn-off thyristor device, and removes the current.
When the second voltage between the anode 11 of the turn-off thyristor device and the gate 13 of the turn-off thyristor device is higher than the first voltage threshold, the first BOD component 41 breaks down, short-circuits the anode 11 of the turn-off thyristor device and the gate 13 of the turn-off thyristor device, and injects a short-time current pulse into the gate 13 of the turn-off thyristor device to trigger the turn-on of the turn-off thyristor device 1. At this time, it is necessary to ensure that the second switching element 61 is open and the third switching element 71 is closed, otherwise the injected current pulse is bypassed by the second switching element 61 and cannot achieve the desired effect.
It should be noted that the above implementation of the first turn-off circuit 2, the second turn-off circuit 6, the third turn-off circuit 7 and the first turn-on circuit 3 is an exemplary description of the prior art.
The embodiment has the advantages of simple structure and better consistency of the protection threshold.
In this embodiment, the implementation manner of the second turn-on circuit 4 includes, but is not limited to, BOD components, thyristor components, resistors, diodes, gas discharge tubes, and the like.
The following embodiments exemplarily illustrate the structure of the second turn-on circuit 4 in the case where the overvoltage protection circuit structure is applied to an Integrated Gate Commutated Thyristor (IGCT), a gate turn-off thyristor (GTO), or a super gate turn-off thyristor (SGTO).
Referring to fig. 5, fig. 5 is a schematic diagram illustrating a third embodiment of an overvoltage protection circuit for a turn-off thyristor device according to the invention.
In one embodiment, the second turn-on circuit 4 includes a first thyristor 42 and a voltage regulator tube assembly 43, wherein a cathode of the first thyristor 42 is connected to the second terminal of the first switch element 22, the gate 13 of the turn-off thyristor device, and the second terminal of the trigger circuit 32, an anode of the first thyristor 42 is connected to a cathode of the voltage regulator tube assembly 43, the anode 11 of the turn-off thyristor device, and the first terminal of the voltage sampling module 5, and an anode of the voltage regulator tube assembly 43 is connected to the gate of the first thyristor 42.
The breakdown voltage of the zener diode component 43 is equal to the first voltage threshold, and may be a single zener diode component or a series connection of several zener diodes.
When the second voltage between the anode 11 of the turn-off thyristor device and the gate 13 of the turn-off thyristor device is higher than the first voltage threshold value, the voltage regulator tube component 43 breaks down to generate a current signal to trigger the first thyristor 42 to turn on, so that the anode 11 of the turn-off thyristor device and the gate 13 of the turn-off thyristor device are short-circuited, a short-time current pulse is injected into the gate 13 of the turn-off thyristor device to trigger the turn-on of the turn-off thyristor device 1. It is then necessary to ensure that the first switching element 22 is open, otherwise the injected current pulse is absorbed by the first capacitor 21 and cannot be used to the desired effect.
The advantage of this embodiment is that withstand surge current ability is strong, and the triggering characteristic is good.
Referring to fig. 6, fig. 6 is a schematic diagram illustrating a fourth embodiment of an overvoltage protection circuit for a turn-off thyristor device according to the invention.
In one embodiment, the second turn-on circuit 4 includes a first valve bank 44 to an nth valve bank 45, N is a positive integer greater than 1, each valve bank includes a second BOD component 441 and a voltage-equalizing resistor 442 connected in parallel, a cathode of the second BOD component 441 in the first valve bank 44 is connected to the second end of the first switching element 22, the gate 13 of the turn-off thyristor device, and the second end of the trigger circuit 32, an anode of the second BOD component 441 in the first valve bank 44 is connected to a cathode of the second BOD component 441 in the second valve bank, an anode of the second BOD component 441 in the nth-1 valve bank is connected to a cathode of the second BOD component 441 in the nth valve bank 45, and an anode of the second BOD component 441 in the nth valve bank 45 is connected to the anode 11 of the turn-off thyristor device and the first end of the voltage sampling module 5.
It should be noted that the second BOD component 441 is the same as the first BOD component 41, the resistance value of the voltage equalizing resistor 442 is proportional to the breakdown voltage of the second BOD component 441, and the sum of the breakdown voltages of the second BOD components 441 in the first valve bank 44 to the nth valve bank 45 is equal to the first voltage threshold.
When the second voltage across the anode 11 of the turn-off thyristor device and the gate 13 of the turn-off thyristor device is higher than the first voltage threshold, all the second BOD components 441 in the first to nth valve banks 44 to 45 are broken down, so as to short-circuit the anode 11 of the turn-off thyristor device and the gate 13 of the turn-off thyristor device, and inject a short-time current pulse into the gate 13 of the turn-off thyristor device, thereby triggering the turn-on of the turn-off thyristor device 1. It is then necessary to ensure that the first switching element 22 is open, otherwise the injected current pulse is absorbed by the first capacitor 21 and cannot be used to the desired effect.
The advantage of this embodiment is that the first voltage threshold is selectable over a wide range.
Referring to fig. 7, fig. 7 is a schematic diagram illustrating a fifth embodiment of an overvoltage protection circuit for a turn-off thyristor device according to the invention.
In one embodiment, the second turn-on circuit 4 includes a third BOD component 46 and a current limiting resistor 47 in series.
In the first connection mode, the cathode of the third BOD component 46 is connected to the second end of the first switch element 22, the gate 13 of the turn-off thyristor device, and the second end of the trigger circuit 32, the anode of the third BOD component 46 is connected to the first end of the current limiting resistor 47, and the second end of the current limiting resistor 47 is connected to the anode 11 of the turn-off thyristor device and the first end of the voltage sampling module 5.
In the second connection mode, the anode of the third BOD component 46 is connected to the anode 11 of the turn-off thyristor device and the first end of the voltage sampling module 5, the cathode of the third BOD component 46 is connected to the second end of the current limiting resistor 47, and the first end of the current limiting resistor 47 is connected to the second end of the first switch element 22, the gate 13 of the turn-off thyristor device, and the second end of the trigger circuit 32.
It should be noted that the third BOD component 46 is the same as the first BOD component 41, and the breakdown voltage of the third BOD component 46 is equal to the first voltage threshold.
When the second voltage across the anode 11 of the turn-off thyristor device and the gate 13 of the turn-off thyristor device is higher than the first voltage threshold, the third BOD component 46 breaks down, so that only the current-limiting resistor 47 remains between the anode 11 of the turn-off thyristor device and the gate 13 of the turn-off thyristor device, and a short-time current pulse limited by the current-limiting resistor 47 is sent to the gate 13 of the turn-off thyristor device to trigger the turn-on of the turn-off thyristor device 1. It is then necessary to ensure that the first switching element 22 is open, otherwise the injected current pulse is absorbed by the first capacitor 21 and cannot be used to the desired effect.
An advantage of this embodiment is that the injected trigger current is limited by the current limiting resistor 47, avoiding that the turn-off thyristor device 1 and the third BOD component 46 are damaged.
It should be noted that the above embodiments only provide the simplest solution, and it is obvious that in all the above embodiments, the current limiting resistor 47 can be connected in series in the second turn-on circuit 4 to implement the corresponding function, so that the description is not given too much.
It should be understood by those skilled in the art that the second turn-on circuit 4 of the above embodiment can be applied to an overvoltage protection circuit of an emitter commutated thyristor (ETO) or an integrated emitter commutated thyristor (IETO), and will not be described in detail.
The embodiment of the invention also provides a control method matched with the overvoltage protection circuit of the turn-off thyristor device 1, which can effectively avoid the malfunction and the refusal of the protection circuit.
A control method of an overvoltage protection circuit of a turn-off thyristor device comprises the following steps:
and the turn-off circuit realizes the commutation between the gate electrode 13 of the turn-off thyristor device and the emitter electrode 14 of the turn-off thyristor device according to the control instruction.
In this step, the specific implementation of the commutation between the gate 13 of the turn-off thyristor device and the emitter 14 of the turn-off thyristor device is as follows: applying a back voltage to the gate 13 of the turn-off thyristor device and the cathode 12 of the turn-off thyristor device; or controlling the turn-off circuit to be disconnected; or to control the shutdown circuit to close.
The first turn-on circuit 3 triggers the turn-off thyristor device 1 to turn on according to the control instruction.
And a second turn-on circuit 4 for triggering the turn-off thyristor device 1 to turn on when a second voltage between the anode 11 of the turn-off thyristor device and the gate 13 of the turn-off thyristor device is higher than a third voltage threshold.
The voltage sampling module 5 collects a first voltage between the anode 11 of the turn-off thyristor device and the cathode 12 of the turn-off thyristor device, or collects a second voltage between the anode 11 of the turn-off thyristor device and the gate 13 of the turn-off thyristor device, and when the first voltage is higher than a second voltage threshold value or the second voltage is higher than a third voltage threshold value, a control instruction is sent to the turn-off circuit and the first turn-on circuit 3.
Referring to fig. 1 and 3, when the method for controlling the overvoltage protection circuit of the turn-off thyristor device 1 according to the embodiment of the present invention is applied to an Integrated Gate Commutated Thyristor (IGCT), a gate turn-off thyristor (GTO), or a super gate turn-off thyristor (SGTO), the method is different based on the charging conditions of the first turn-off circuit 2, the first turn-on circuit 3, and the voltage sampling module 5, and in the normal case, the first turn-off circuit 2, the first turn-on circuit 3, and the voltage sampling module 5 are powered on first and powered off last in the power-on and power-off processes, and the first turn-on circuit 3 times, the first turn-off circuit 2 is powered on last and powered off first, so the charging conditions of the three are divided into the following four types:
under a first working condition, the first turn-off circuit 2, the first turn-on circuit 3 and the voltage sampling module 5 are all electrified.
Under the second working condition, the first turn-off circuit 2 is not electrified, and the first turn-on circuit 3 and the voltage sampling module 5 are electrified.
In the third working condition, the first turn-off circuit 2 and the first turn-on circuit 3 are not electrified, and the voltage sampling module 5 is electrified.
Under the fourth working condition, the first turn-off circuit 2, the first turn-on circuit 3 and the voltage sampling module 5 are all uncharged.
The control methods of the above four working conditions, namely the first working condition, the second working condition and the third working condition, are respectively as follows:
for the first working condition, when the voltage sampling module 5 detects that the first voltage between the anode 11 of the turn-off thyristor device and the cathode 12 of the turn-off thyristor device is higher than the second voltage threshold value, or detects that the second voltage between the anode 11 of the turn-off thyristor device and the gate 13 of the turn-off thyristor device is higher than the third voltage threshold value, the first turn-off circuit 2 is controlled to remove the back voltage, the first turn-on circuit 3 is controlled to inject the current trigger signal to the gate 13 of the turn-off thyristor device, then the turn-off thyristor device 1 is triggered to turn on, the second voltage between the anode 11 of the turn-off thyristor device and the gate 13 of the turn-off thyristor device does not exceed the first voltage threshold value, and the second turn-on circuit 4 does not work.
For the second working condition, when the voltage sampling module 5 detects that the first voltage between the anode 11 of the turn-off thyristor device and the cathode 12 of the turn-off thyristor device is higher than the second voltage threshold, or detects that the second voltage between the anode 11 of the turn-off thyristor device and the gate 13 of the turn-off thyristor device is higher than the third voltage threshold, the first turn-off circuit 2 does not act; meanwhile, the voltage sampling module 5 controls the first turn-on circuit 3 to inject a current trigger signal to the gate electrode 13 of the turn-off thyristor device, then the turn-off thyristor device 1 is triggered to turn on, a second voltage between the anode 11 of the turn-off thyristor device and the gate electrode 13 of the turn-off thyristor device does not exceed a first voltage threshold, and the second turn-on circuit 4 does not work.
For the third working condition, when the voltage sampling module 5 detects that the first voltage between the anode 11 of the turn-off thyristor device and the cathode 12 of the turn-off thyristor device is higher than the second voltage threshold value, or detects that the second voltage between the anode 11 of the turn-off thyristor device and the gate 13 of the turn-off thyristor device is higher than the third voltage threshold value, the first turn-off circuit 2 and the first turn-on circuit 3 do not act, at this time, the first turn-off circuit 2 loses power, and the back voltage cannot be applied originally; when a second voltage between the anode 11 of the turn-off thyristor device and the gate 13 of the turn-off thyristor device exceeds a first voltage threshold, the second turn-on circuit 4 acts and generates a current trigger signal, and then the turn-off thyristor device 1 is triggered to turn on;
for the fourth working condition, the first turn-off circuit 2, the first turn-on circuit 3 and the voltage sampling module 5 do not act, when the second voltage exceeds the first voltage threshold, the second turn-on circuit 4 acts and generates a current trigger signal, and then the thyristor device 1 can be turned off to be triggered and turned on.
Referring to fig. 2 and fig. 4, when the method for controlling the overvoltage protection circuit of the turn-off thyristor device 1 according to the embodiment of the present invention is applied to an emitter commutated thyristor (ETO) or an integrated emitter commutated thyristor (IETO), based on the difference between the charging conditions of the first turn-on circuit 3, the voltage sampling module 5, the second turn-off circuit 6, and the third turn-off circuit 7, in the normal case, the first turn-on circuit 3, the voltage sampling module 5, the second turn-off circuit 6, and the third turn-off circuit 7 are powered on first and powered off last, the second turn-off circuit 6 and the third turn-off circuit 7 times, and the first turn-on circuit 3 is powered on last and powered off first, so the charging conditions of the three are divided into the following four types:
in the fifth working condition, the first on circuit 3, the voltage sampling module 5, the second off circuit 6 and the third off circuit 7 are all electrified.
In the sixth working condition, the first turn-on circuit 3 is not electrified, and the voltage sampling module 5, the second turn-off circuit 6 and the third turn-off circuit 7 are electrified.
In the seventh working condition, the voltage sampling module 5 is electrified, and the first switching-on circuit 3, the second switching-off circuit 6 and the third switching-off circuit 7 are not electrified.
Under the eighth working condition, the first turn-on circuit 3, the voltage sampling module 5, the second turn-off circuit 6 and the third turn-off circuit 7 are all uncharged.
It should be noted that the second shutdown circuit maintains a normally-off state when power is lost; the third off circuit keeps a normal on state when power is lost; or may become conductive when the third shutdown circuit is subjected to a positive voltage during a power loss.
The control methods of the fifth working condition, the eighth working condition and the like are respectively as follows:
for the fifth working condition, when the voltage sampling module 5 detects that the first voltage between the anode 11 of the turn-off thyristor device and the cathode 12 of the turn-off thyristor device is higher than the second voltage threshold, or detects that the second voltage between the anode 11 of the turn-off thyristor device and the gate 13 of the turn-off thyristor device is higher than the third voltage threshold, the second turn-off circuit 6 is controlled to be turned off, the third turn-off circuit 7 is controlled to be turned on, the first turn-on circuit 3 is controlled to inject the current trigger signal to the gate 13 of the turn-off thyristor device, then the turn-off thyristor device 1 is triggered to be turned on, the second voltage between the anode 11 of the turn-off thyristor device and the gate 13 of the turn-off thyristor device does not exceed the first voltage threshold, and the second turn-on circuit 4 does not work.
For the sixth working condition, when the voltage sampling module 5 detects that the first voltage between the anode 11 of the turn-off thyristor device and the cathode 12 of the turn-off thyristor device is higher than the second voltage threshold, or detects that the second voltage between the anode 11 of the turn-off thyristor device and the gate 13 of the turn-off thyristor device is higher than the third voltage threshold, the second turn-off circuit 6 is controlled to be turned off, the third turn-off circuit 7 is controlled to be turned on, the first turn-on circuit 3 does not act, and when the second voltage between the anode 11 of the turn-off thyristor device and the gate 13 of the turn-off thyristor device exceeds the first voltage threshold, the second turn-on circuit 4 acts and generates a current trigger signal, and then the turn-off thyristor device 1 triggers to be turned on.
For the seventh working condition, when the voltage sampling module 5 detects that the first voltage between the anode 11 of the turn-off thyristor device and the cathode 12 of the turn-off thyristor device is higher than the second voltage threshold value, or detects that the second voltage between the anode 11 of the turn-off thyristor device and the gate 13 of the turn-off thyristor device is higher than the third voltage threshold value, the second turn-off circuit 6, the third turn-off circuit 7 and the first turn-on circuit 3 are not operated, and the second turn-off circuit 6 is in a normally-off state; when a second voltage between the anode 11 of the turn-off thyristor device and the gate 13 of the turn-off thyristor device exceeds a first voltage threshold, the second turn-on circuit 4 acts and generates a current trigger signal, and then the turn-off thyristor device 1 is triggered to turn on;
for the eighth working condition, the first turn-on circuit 3, the voltage sampling module 5, the second turn-off circuit 6 and the third turn-off circuit 7 do not act, when the second voltage exceeds the first voltage threshold, the second turn-on circuit 4 acts and generates a current trigger signal, and then the thyristor device 1 can be turned off to be triggered and turned on.
Although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.

Claims (35)

1. An overvoltage protection circuit for a turn-off thyristor device, comprising:
the turn-off circuit is used for realizing the commutation between the gate electrode and the emitter of the turn-off thyristor device according to the control instruction;
the first switching-on circuit is used for triggering the turn-off thyristor device to be switched on according to the control instruction;
the second turn-on circuit is used for triggering the turn-off thyristor device to be turned on when a second voltage between the anode and the gate of the turn-off thyristor device is higher than a first voltage threshold value;
and the voltage sampling module is used for acquiring a first voltage between the anode and the cathode of the turn-off thyristor device or acquiring a second voltage between the anode and the gate of the turn-off thyristor device, and sending a control instruction to the turn-off circuit and the first turn-on circuit when the first voltage is higher than a second voltage threshold value or the second voltage is higher than a third voltage threshold value.
2. The overvoltage protection circuit for a turn-off thyristor device according to claim 1, wherein the turn-off thyristor device comprises an integrated gate-commutated thyristor, a gate-turn-off thyristor or a super-gate-turn-off thyristor.
3. A turn-off thyristor device overvoltage protection circuit according to claim 1, characterized in that the turn-off thyristor device comprises an emitter commutated thyristor or an integrated emitter commutated thyristor.
4. The overvoltage protection circuit for a turn-off thyristor device of claim 2, wherein the turn-off circuit comprises a first turn-off circuit;
the first end of the first turn-off circuit is connected with a gate pole of the turn-off thyristor device, and the second end of the first turn-off circuit is connected with a cathode of the turn-off thyristor device; the first turn-on circuit and the first turn-off circuit are connected in parallel; the first end of the second turn-on circuit is connected with the anode of the turn-off thyristor device, and the second end of the second turn-on circuit is connected with the gate pole of the turn-off thyristor device, the first end of the first turn-on circuit and the first end of the first turn-off circuit; the first end of the voltage sampling module is connected with the first end of the second turn-on circuit and the anode of the turn-off thyristor device, the second end of the voltage sampling module is connected with the second end of the first turn-on circuit, the second end of the first turn-off circuit and the cathode of the turn-off thyristor device, or the second end of the voltage sampling module is connected with the first end of the first turn-on circuit, the first end of the first turn-off circuit and the gate of the turn-off thyristor device.
5. The overvoltage protection circuit for a turn-off thyristor device according to claim 3, wherein the turn-off circuit comprises a second turn-off circuit and a third turn-off circuit;
the first end of the third turn-off circuit is connected with the emitter of the turn-off thyristor device, the second end of the third turn-off circuit is connected with the cathode of the turn-off thyristor device, the first end of the second turn-off circuit is connected with the gate of the turn-off thyristor device, and the second end of the second turn-off circuit is connected with the cathode of the turn-off thyristor device; the first turn-on circuit and the second turn-off circuit are connected in parallel; the first end of the second turn-on circuit is connected with the anode of the turn-off thyristor device, the second end of the second turn-on circuit is connected with the gate pole of the turn-off thyristor device, the first end of the first turn-on circuit and the first end of the second turn-off circuit, the first end of the voltage sampling module is connected with the first end of the second turn-on circuit and the anode of the turn-off thyristor device, the second end of the voltage sampling module is connected with the second end of the first turn-on circuit, the second end of the second turn-off circuit and the cathode of the turn-off thyristor device, or the second end of the voltage sampling module is connected with the first end of the first turn-on circuit, the first end of the second turn-off circuit and the gate pole of the turn-off thyristor device.
6. The turn-off thyristor device overvoltage protection circuit of claim 4, wherein the second turn-on circuit comprises a first BOD component;
the anode of the first BOD component is connected with the anode of the turn-off thyristor device, and the cathode of the first BOD component is connected with the gate pole of the turn-off thyristor device, the first end of the first turn-on circuit and the first end of the first turn-off circuit.
7. The over-voltage protection circuit for a turn-off thyristor device according to claim 4, wherein the second turn-on circuit comprises a first thyristor and a regulator component;
the cathode of the first thyristor is connected with the first end of the first turn-off circuit, the gate pole of the turn-off thyristor device and the first end of the first turn-on circuit, the anode of the first thyristor is connected with the cathode of the voltage regulator tube component, the anode of the turn-off thyristor device and the first end of the voltage sampling module, and the anode of the voltage regulator tube component is connected with the gate pole of the first thyristor.
8. The overvoltage protection circuit for a turn-off thyristor device according to claim 4, wherein the second turn-on circuit comprises a first valve bank to an Nth valve bank, N is a positive integer greater than 1, and each valve bank comprises a second BOD component and a voltage equalizing resistor connected in parallel;
wherein, the second BOD subassembly negative pole in the first valves with first turn-off circuit first end, can turn off thyristor device gate pole, first circuit first end connection of opening, the second BOD subassembly positive pole in the first valves and the second BOD subassembly negative pole in the second valves are connected, the second BOD subassembly positive pole in the N-1 valves and the second BOD subassembly negative pole in the N valves are connected, the second BOD subassembly positive pole in the N valves and can turn off thyristor device positive pole, the first end connection of voltage sampling module.
9. The device of claim 4, wherein the second turn-on circuit comprises a third BOD component and a current limiting resistor connected in series.
10. The turn-off thyristor device overvoltage protection circuit of claim 9, wherein a cathode of the third BOD component is connected to the first end of the first turn-off circuit, the gate of the turn-off thyristor device, and the first end of the first turn-on circuit, an anode of the third BOD component is connected to the first end of the current limiting resistor, and the second end of the current limiting resistor is connected to the anode of the turn-off thyristor device and the first end of the voltage sampling module;
or the anode of the third BOD component is connected with the anode of the turn-off thyristor device and the first end of the voltage sampling module, the cathode of the third BOD component is connected with the second end of the current-limiting resistor, and the first end of the current-limiting resistor is connected with the first end of the first turn-off circuit, the gate of the turn-off thyristor device and the first end of the first turn-on circuit.
11. The turn-off thyristor device overvoltage protection circuit of claim 5, wherein the second turn-on circuit comprises a first BOD component;
the anode of the first BOD component is connected with the anode of the turn-off thyristor device, and the cathode of the first BOD component is connected with the gate pole of the turn-off thyristor device, the first end of the first turn-on circuit and the first end of the second turn-off circuit.
12. The overvoltage protection circuit for a turn-off thyristor device according to claim 5, wherein the second turn-on circuit comprises a first thyristor and a regulator tube assembly;
the cathode of the first thyristor is connected with the first end of the second turn-off circuit, the gate pole of the turn-off thyristor device and the first end of the first turn-on circuit, the anode of the first thyristor is connected with the cathode of the voltage regulator tube component, the anode of the turn-off thyristor device and the first end of the voltage sampling module, and the anode of the voltage regulator tube component is connected with the gate pole of the first thyristor.
13. The overvoltage protection circuit for a turn-off thyristor device according to claim 5, wherein the second turn-on circuit comprises a first valve bank to an Nth valve bank, N is a positive integer greater than 1, and each valve bank comprises a second BOD component and a voltage equalizing resistor connected in parallel;
wherein, the second BOD subassembly negative pole in the first valves and the second turn-off the first end of circuit, can turn off thyristor device gate pole, the first circuit first end connection of opening of turning on, the second BOD subassembly positive pole in the first valves and the second BOD subassembly negative pole in the second valves are connected, the second BOD subassembly positive pole in the N-1 valves and the second BOD subassembly negative pole in the N valves are connected, the second BOD subassembly positive pole in the N valves and can turn off thyristor device positive pole, the first end connection of voltage sampling module.
14. The device of claim 5, wherein the second turn-on circuit comprises a third BOD component and a current limiting resistor connected in series.
15. The turn-off thyristor device overvoltage protection circuit of claim 14, wherein a cathode of the third BOD component is connected to the first end of the second turn-off circuit, the gate of the turn-off thyristor device, and the first end of the first turn-on circuit, an anode of the third BOD component is connected to the first end of the current limiting resistor, and the second end of the current limiting resistor is connected to the anode of the turn-off thyristor device and the first end of the voltage sampling module;
or the anode of the third BOD component is connected with the anode of the turn-off thyristor device and the first end of the voltage sampling module, the cathode of the third BOD component is connected with the second end of the current-limiting resistor, and the first end of the current-limiting resistor is connected with the first end of the second turn-off circuit, the gate of the turn-off thyristor device and the first end of the first turn-on circuit.
16. A turn-off thyristor device overvoltage protection circuit according to any one of claims 1 to 15, wherein the first voltage threshold is lower than an anode breakdown voltage threshold of the turn-off thyristor device, and the second voltage threshold and the third voltage threshold are both lower than the first voltage threshold.
17. The turn-off thyristor device overvoltage protection circuit of claim 6 or 11, wherein the first BOD component breakdown voltage is equal to the first voltage threshold.
18. The overvoltage protection circuit for a turn-off thyristor device according to claim 7 or 12, wherein the overall breakdown voltage of the zener diode component is equal to the first voltage threshold.
19. The overvoltage protection circuit of a turn-off thyristor device according to claim 8 or 13, wherein the value of the equalizing resistor is proportional to the breakdown voltage of the second BOD component, and the sum of the breakdown voltages of the second BOD components in the first to nth banks is equal to the first voltage threshold.
20. The overvoltage protection circuit for a turn-off thyristor device according to claim 9 or 14, wherein the third BOD component breakdown voltage is equal to the first voltage threshold.
21. A control method of an overvoltage protection circuit capable of turning off a thyristor device is characterized by comprising the following steps:
the voltage sampling module collects a first voltage between an anode and a cathode of the turn-off thyristor device or a second voltage between the anode and a gate pole of the turn-off thyristor device, and when the first voltage is higher than a second voltage threshold value or the second voltage is higher than a third voltage threshold value, a control instruction is sent to the turn-off circuit and the first turn-on circuit;
the turn-off circuit realizes the commutation between the gate electrode and the emitter of the turn-off thyristor device according to the control instruction;
the first switching-on circuit triggers the turn-off thyristor device to be switched on according to the control instruction;
and the second turn-on circuit triggers the turn-off thyristor device to turn on when a second voltage between the anode and the gate of the turn-off thyristor device is higher than the first voltage threshold value.
22. The method of claim 21, wherein the turn-off thyristor device comprises an integrated gate-commutated thyristor, a gate turn-off thyristor or a super-gate turn-off thyristor, and the turn-off circuit comprises a first turn-off circuit.
23. A method of controlling an overvoltage protection circuit for a turn-off thyristor device according to claim 21, wherein the turn-off thyristor device comprises a turn-off thyristor device comprising an emitter commutated thyristor or an integrated emitter commutated thyristor, and the turn-off circuit comprises a second turn-off circuit and a third turn-off circuit.
24. The method of claim 22, wherein the overvoltage protection circuit is configured to operate in:
under a first working condition, the first turn-off circuit, the first turn-on circuit and the voltage sampling module are all electrified;
under a second working condition, the first turn-off circuit is not electrified, and the first turn-on circuit and the voltage sampling module are electrified;
under a third working condition, the first turn-off circuit and the first turn-on circuit are not electrified, and the voltage sampling module is electrified;
and under the fourth working condition, the first turn-off circuit, the first turn-on circuit and the voltage sampling module are all uncharged.
25. The method of claim 24, wherein in the first operating condition, when the voltage sampling module detects that the first voltage is higher than the second voltage threshold or detects that the second voltage is higher than the third voltage threshold, the first turn-off circuit is controlled to remove the back voltage, and the voltage sampling module controls the first turn-on circuit to inject the current trigger signal to the gate of the turn-off thyristor device, and then the turn-off thyristor device is triggered to turn on, and the second voltage between the anode and the gate of the turn-off thyristor device does not exceed the first voltage threshold, and the second turn-on circuit does not act.
26. The method of claim 24, wherein in the second operating condition, the first turn-off circuit is disabled when the voltage sampling module detects that the first voltage is higher than the second voltage threshold or detects that the second voltage is higher than the third voltage threshold; and simultaneously, the voltage sampling module controls the first switching-on circuit to inject a current trigger signal to the gate pole of the turn-off thyristor device, then the turn-off thyristor device is triggered to be switched on, a second voltage between the anode and the gate pole of the turn-off thyristor device does not exceed a first voltage threshold, and the second switching-on circuit does not act.
27. The method according to claim 24, wherein in the third condition, when the voltage sampling module detects that the first voltage is higher than the second voltage threshold or detects that the second voltage is higher than the third voltage threshold, the first turn-off circuit and the first turn-on circuit do not act, and the first turn-off circuit cannot apply the back voltage; when the second voltage exceeds the first voltage threshold, the second turn-on circuit acts and generates a current trigger signal to trigger the turn-off thyristor device to turn on.
28. The method of claim 24, wherein in a fourth operating condition, the first turn-off circuit, the first turn-on circuit, and the voltage sampling module are all inactive, and when the second voltage exceeds the first voltage threshold, the second turn-on circuit is active and generates a current trigger signal to trigger the turn-off thyristor device to turn on.
29. A method for controlling an overvoltage protection circuit for a turn-off thyristor device according to claim 23, wherein the method for controlling the overvoltage protection circuit is used in the following operating conditions:
under a fifth working condition, the first switching-on circuit, the voltage sampling module, the second switching-off circuit and the third switching-off circuit are all electrified;
in a sixth working condition, the first turn-on circuit is not electrified, and the voltage sampling module, the second turn-off circuit and the third turn-off circuit are electrified;
under a seventh working condition, the voltage sampling module is electrified, and the first switching-on circuit, the second switching-off circuit and the third switching-off circuit are not electrified;
and under the eighth working condition, the first switching-on circuit, the voltage sampling module, the second switching-off circuit and the third switching-off circuit are all uncharged.
30. The method as claimed in claim 29, wherein in the fifth operating condition, when the voltage sampling module detects that the first voltage is higher than the second voltage threshold or detects that the second voltage is higher than the third voltage threshold, the second turn-off circuit is controlled to be turned off, the third turn-off circuit is controlled to be turned on, the first turn-on circuit is controlled to inject the current trigger signal to the gate of the turn-off thyristor device, and then the turn-off thyristor device is controlled to be turned on, the second voltage does not exceed the first voltage threshold, and the second turn-on circuit is not operated.
31. The method as claimed in claim 29, wherein in the sixth operating condition, when the voltage sampling module detects that the first voltage is higher than the second voltage threshold or detects that the second voltage is higher than the third voltage threshold, the second turn-off circuit is controlled to be turned off, the third turn-off circuit is controlled to be turned on, the first turn-on circuit is not operated, and when the second voltage exceeds the first voltage threshold, the second turn-on circuit is operated and generates the current trigger signal, and then the thyristor device is turned off to trigger to be turned on.
32. The method of claim 29, wherein in a seventh operating condition, when the voltage sampling module detects that the first voltage is higher than the second voltage threshold, or detects that the second voltage is higher than the third voltage threshold, the second turn-off circuit, the third turn-on circuit, and the first turn-on circuit are not activated; when the second voltage exceeds the first voltage threshold, the second turn-on circuit acts and generates a current trigger signal, and then the thyristor device can be turned off and triggered to turn on.
33. The method of claim 29, wherein in an eighth operating condition, the first turn-on circuit, the voltage sampling module, the second turn-off circuit, and the third turn-off circuit are all inactive, and when the second voltage exceeds the first voltage threshold, the second turn-on circuit is active and generates a current trigger signal, and then the thyristor device is turned off to trigger on.
34. A method of controlling an overvoltage protection circuit for a turn-off thyristor device according to any one of claims 29 to 33, wherein the second turn-off circuit is maintained in a normally-off state in the event of a loss of power; the third off circuit keeps a normal on state when power is lost; or may become conductive when the third shutdown circuit is subjected to a positive voltage during a power loss.
35. A method of controlling an overvoltage protection circuit for a turn-off thyristor device according to any one of claims 21 to 33, wherein the first voltage threshold is lower than an anode breakdown voltage threshold of the turn-off thyristor device, and the second voltage threshold and the third voltage threshold are both lower than the first voltage threshold.
CN202210506234.8A 2022-05-11 2022-05-11 Overvoltage protection circuit capable of turning off thyristor and control method Pending CN114825270A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117176121A (en) * 2023-11-02 2023-12-05 成都沃飞天驭科技有限公司 Electronic switch driving circuit, control method and electric aircraft

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117176121A (en) * 2023-11-02 2023-12-05 成都沃飞天驭科技有限公司 Electronic switch driving circuit, control method and electric aircraft
CN117176121B (en) * 2023-11-02 2024-02-23 成都沃飞天驭科技有限公司 Electronic switch driving circuit, control method and electric aircraft

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