CN110830015A - Drive protection circuit of power semiconductor element and control method thereof - Google Patents
Drive protection circuit of power semiconductor element and control method thereof Download PDFInfo
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- CN110830015A CN110830015A CN201911090504.6A CN201911090504A CN110830015A CN 110830015 A CN110830015 A CN 110830015A CN 201911090504 A CN201911090504 A CN 201911090504A CN 110830015 A CN110830015 A CN 110830015A
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- semiconductor element
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
Abstract
The invention discloses a drive protection circuit of a power semiconductor element and a control method thereof, wherein in the drive protection circuit, one ends of a turn-on module, a turn-off module and a safety unit are all connected to a gate pole of the power semiconductor element, the other ends of the turn-on module, the turn-off module and the safety unit are all connected to a cathode of the power semiconductor element, and the safety unit injects gate pole current or provides forward voltage to the power semiconductor element when the drive protection circuit is in fault, so that the power semiconductor element is in a turn-on state, or/and provides high voltage higher than reverse breakdown voltage to the power semiconductor element, so that the power semiconductor element is invalid and is in a short-circuit state. When the power semiconductor element series system integrally receives a turn-on command, the drive protection circuit can ensure that the series system integrally is in a conducting state even if the drive protection circuit of a plurality of elements fails, and improves the series reliability.
Description
Technical Field
The present invention relates to the field of electronic circuit technology, and more particularly, to a driving protection circuit for a power semiconductor device and a control method thereof.
Background
In the prior art, a gate drive circuit of a thyristor-type element (such as a thyristor, an integrated gate commutated thyristor IGCT, an emitter turn-off thyristor ETO, and the like) is driven to inject current to a gate of the element to trigger the device to be turned on when the gate drive circuit is turned on, and is driven to provide back voltage to a gate cathode of the element to reliably turn off the device when the gate drive circuit is turned off. In addition, in the gate driving circuit of the MOSFET, IGBT, etc. in the prior art, the device is turned on by driving to provide a forward voltage to the gate of the device when the device is turned on, and the device is reliably turned off by driving to provide a back voltage to the gate of the device when the device is turned off.
In high voltage applications, it is often necessary to use power semiconductor elements in series, with a certain redundancy in the number of series connections. For the elements with failure short circuit mode, when one or more series elements of the series elements have faults and the number of faults does not exceed the redundancy number, the fault elements are ensured to be in a conducting or short circuit state, so that the whole series system can still work normally.
Generally, the failure rate of the power semiconductor element drive protection circuit is significantly higher than the element itself. In the prior art, when the drive protection circuit fails, even if an on signal is received, the drive will provide back voltage to the cathode of the element gate without injecting gate current or providing forward voltage, thereby ensuring that the element is in an off state.
For a series system, overvoltage protection elements such as lightning arresters are connected in parallel across each power semiconductor element, and the overvoltage protection threshold is usually lower than the maximum withstand voltage of the power semiconductor element. When all power semiconductor elements receive an opening command at the same time, if a driving protection circuit of one power semiconductor element breaks down, the driving cannot inject current to a gate pole of the power semiconductor element, the power semiconductor element cannot be conducted, line voltage is completely applied to overvoltage protection elements connected with the power semiconductor elements in parallel, the overvoltage protection elements absorb energy of a system, and after the energy is accumulated to a certain degree, severe processes such as explosion and the like can be caused, so that other parts of equipment and even an integral series system cannot work normally.
Therefore, the gate drive protection circuit of the prior art seriously reduces the reliability of the series system of power semiconductor elements, especially for applications in the high voltage domain.
Disclosure of Invention
The present invention is directed to overcome the above-mentioned drawbacks of the prior art, and provides a driving protection circuit for a power semiconductor device and a control method thereof.
The drive protection circuit of the power semiconductor element provided by the invention comprises a switching-on module and a switching-off module, and is characterized by also comprising a safety unit,
wherein the content of the first and second substances,
one end of each of the turn-on module, the turn-off module and the safety unit is connected to the gate pole of the power semiconductor device, the other end of each of the turn-on module, the turn-off module and the safety unit is connected to the cathode of the power semiconductor device,
the safety unit injects gate current or provides forward voltage to the power semiconductor element when the driving protection circuit fails so that the power semiconductor element is in a conducting state, or/and provides high voltage higher than reverse breakdown voltage to the power semiconductor element so that the power semiconductor element fails and is in a short-circuit state.
Further, the safety unit comprises a standby opening module or a high-voltage module,
the standby switch-on module is connected between a gate and a cathode of the power semiconductor device, and injects gate current or provides forward voltage to the power semiconductor element when the driving protection circuit fails so that the power semiconductor element is in a conducting state;
the high-voltage module is connected between a gate and a cathode of the power semiconductor device, and provides a high voltage higher than a reverse breakdown voltage to the power semiconductor element when the driving protection circuit fails, so that the power semiconductor element fails and is in a short-circuit state.
Further, the standby switch-on module comprises a first voltage management circuit, a first capacitor, a current-limiting resistor and a first diode,
wherein the content of the first and second substances,
the positive electrode and the negative electrode of the first capacitor are both connected to the first voltage management circuit;
the positive electrode of the first capacitor is connected to the positive electrode of the first diode through the current-limiting resistor;
the cathode of the first diode is connected to the gate electrode of the power semiconductor element;
the negative pole of the first capacitor is connected to the cathode of the power semiconductor element,
or the standby switch-on module comprises a second voltage management circuit, a second capacitor, a freewheeling diode, a first controllable switch, an inductor, a sampling resistor and a second diode,
wherein the content of the first and second substances,
the anode and the cathode of the second capacitor are both connected to the second voltage management circuit, and the cathode of the second capacitor is connected to the anode of the freewheeling diode;
one end of the first controllable switch is connected to the anode of the second capacitor, and the other end of the first controllable switch is connected to the cathode of the freewheeling diode and one end of the inductor;
the other end of the inductor is connected to the anode of the second diode through the sampling resistor;
the cathode of the second diode is connected to the gate electrode of the power semiconductor element;
the negative electrode of the second capacitor is connected to the cathode of the power semiconductor element.
Further, the high voltage module comprises a third voltage management circuit, a high voltage capacitor, a second controllable switch and a third diode,
wherein the content of the first and second substances,
the positive electrode and the negative electrode of the high-voltage capacitor are both connected to the third voltage management circuit, and the negative electrode of the high-voltage capacitor is connected to one end of the second controllable switch;
the other end of the second controllable switch is connected to the cathode of the third diode;
the anode of the third diode is connected to the gate of the power semiconductor element;
the anode of the high-voltage capacitor is connected to the cathode of the power semiconductor element.
Further, the safety unit is connected to an external power source.
The power supply management system further comprises a control unit, a first power supply management module and a second power supply management module;
the control unit is connected to the first power management module, the standby switch-on module or the high-voltage module, the switch-on module and the second power management module;
the second power management module is connected to the switching-on module and the switching-off module;
the power semiconductor element receives a turn-on instruction when the driving protection circuit is in fault, when the control unit detects that the turn-on module or the second power management module is in fault, the control unit controls the standby turn-on module to work, and injects gate current to the power semiconductor element to conduct the power semiconductor element or applies forward voltage to the gate of the power semiconductor element to conduct the power semiconductor element,
or
The power semiconductor element receives a turn-on instruction when the driving protection circuit is in fault, and when the control unit detects that the turn-on module or the second power management module is in fault, the control unit controls the high-voltage module to work, provides reverse high voltage for the gate pole of the power semiconductor element, and breaks down the gate pole to cause the gate pole to fail.
Further, the power semiconductor element is an integrated gate commutated thyristor, an emitter turn-off thyristor, a MOSFET or an IGBT.
The invention also provides a control method of a drive protection circuit of a power semiconductor element, which comprises the following steps:
when the drive protection circuit is in failure, the safety unit injects gate current or provides forward voltage to the power semiconductor element to enable the power semiconductor element to be in a conducting state, or/and provides high voltage higher than reverse breakdown voltage to the power semiconductor element to enable the power semiconductor element to be in a failure and in a short-circuit state.
Further, the standby switch-on module in the safety unit injects gate current or provides forward voltage to the power semiconductor element when the driving protection circuit fails, so that the power semiconductor element is in a conducting state,
or
The high-voltage module in the safety unit provides a high voltage higher than a reverse breakdown voltage to the power semiconductor element when the driving protection circuit fails, so that the power semiconductor element fails and is in a short-circuit state.
Further, the control unit provides a signal to the standby switch-on module to control the standby switch-on module to start working, the first voltage management circuit charges the first capacitor, and the first capacitor injects gate current or provides forward voltage to the power semiconductor element through the current-limiting resistor and the first diode to make the power semiconductor element work in a conducting state,
or
The control unit provides a signal to the standby switch-on module to control the standby switch-on module to start working, the second voltage management circuit charges the second capacitor, and the second capacitor injects gate current or provides forward voltage to the power semiconductor element through the first controllable switch, the inductor, the sampling resistor, the freewheeling diode and the second diode to enable the power semiconductor element to work in a conducting state,
or
The control unit provides a signal for the high-voltage module to control the high-voltage module to start working, the third voltage management circuit charges the high-voltage capacitor, and the high-voltage capacitor applies reverse high voltage to the gate pole of the power semiconductor element by controlling the second controllable switch.
Further, by changing said first voltage management circuit parameter, adjusting said first capacitor charging voltage, controlling the magnitude of said injected gate current or said provided forward voltage,
or
Adjusting said second capacitor charging voltage by changing said second voltage management circuit parameter, controlling the magnitude of said injected gate current or said provided forward voltage,
or
And adjusting the charging voltage of the high-voltage capacitor by changing the parameter of the third voltage management circuit, and controlling the amplitude of the reverse high voltage.
Further, the control unit controls the first controllable switch to adjust the amplitude and ripple of the injected gate current or the provided forward voltage,
or
And the control unit controls the second controllable switch to adjust the amplitude and the ripple of the reverse high voltage.
According to the drive protection circuit of the power semiconductor element and the control method thereof, when the drive protection circuit breaks down, if a turn-on signal is received, a standby turn-on module in the drive protection circuit injects gate current or provides forward voltage to the element, so that the element is in a conducting state; or a high-voltage module in the driving protection circuit provides a high voltage higher than a reverse breakdown voltage to the element, so that the element fails and is in a short-circuit state. The drive protection circuit is high in reliability, even if the drive protection circuits of a plurality of elements fail when the power semiconductor element series system integrally receives a turn-on command, the series system can be guaranteed to be in a turn-on state integrally, series reliability is improved, and the standby turn-on module and the high-voltage module are simple in circuit principle, easy to achieve, low in cost and small in size. Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 illustrates an IGCT drive protection circuit with a standby switch-on module according to an embodiment of the present invention;
fig. 2 illustrates a topology of a first standby provisioning module according to an embodiment of the present invention;
fig. 3 illustrates a topology of a second standby provisioning module according to an embodiment of the present invention;
FIG. 4 illustrates an IGCT drive protection circuit with a high voltage module according to an embodiment of the present invention;
FIG. 5 illustrates a topology of a high voltage module of an embodiment of the present invention;
FIG. 6 illustrates an ETO drive protection circuit with a standby power-on module according to an embodiment of the present invention;
fig. 7 shows an ETO drive protection circuit with a high voltage module of an embodiment of the invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention discloses a drive protection circuit of a power semiconductor element and a control method thereof, wherein the drive protection circuit comprises a safety unit, the safety unit comprises a standby switch-on module or/and a high-voltage module, and the power semiconductor element can be an IGCT, an ETO, a MOSFET or an IGBT.
Fig. 1 shows an IGCT driving protection circuit with a standby power-on module according to an embodiment of the present invention.
As shown in fig. 1, the driving protection circuit of the power semiconductor IGCT includes the standby switch-on module, a switch-off module 1, a control unit, a power management module 1 and a power management module 2,
wherein the content of the first and second substances,
one end of each of the standby switch-on module, the standby switch-on module and the standby switch-off module 1 is connected to a gate pole of the IGCT, and the other end of each of the standby switch-on module, the standby switch-on module and the standby switch-off module 1 is connected to a cathode of the IGCT; the control unit is connected to the standby switch-on module, the standby switch-on module and the standby switch-off module 1, and the power management module 1, and the control unit is independently powered by an external power supply through the power management module 1; the on-off module 1 is connected to the power management module 2, and is powered by an external power supply through the power management module 2.
When the drive protection circuit is in fault, if a turn-off instruction is received, the serial number of the serial systems has redundancy, the line voltage is endured by the normally working power semiconductor element IGCT, and the standby switch-on module does not work; if receiving a turn-on instruction, when the control unit detects that the turn-on module or the power management module 2 has a fault, the control unit controls the standby turn-on module to work, and injects gate current into the IGCT to conduct the IGCT, so that the whole series system is ensured to be in a conducting state.
The drive protection circuit uses the power management module 1 to supply power for the control unit independently, and uses an external power supply to directly supply power for the standby switch-on module, thereby ensuring the working reliability of the control unit and the standby switch-on module when the drive fails.
Fig. 2 shows a topology structure of a first standby provisioning module according to an embodiment of the present invention. As shown in fig. 2, the standby turn-on module includes a voltage management circuit, a capacitor, a current limiting resistor and a diode,
wherein the content of the first and second substances,
the positive electrode and the negative electrode of the capacitor are both connected to the voltage management circuit; the anode of the capacitor is connected to the anode of the diode through the current-limiting resistor; the cathode of the diode is connected to the gate of the power semiconductor element, such as an IGCT; the negative pole of the capacitor is connected to the cathode of the power semiconductor element, such as an IGCT.
The voltage management circuit is provided with an enabling control terminal, when the driving protection circuit is in fault, the control unit provides a signal to the enabling control terminal to control the standby switch-on module to start working, an external power supply charges the capacitor through the voltage management circuit with an isolation function or without isolation energy supply, and then the capacitor injects gate current into a power semiconductor element such as an IGCT through the current limiting resistor and the diode to enable the power semiconductor element to work in a conducting state. By varying the voltage management circuit parameters, the capacitor charging voltage can be adjusted to control the magnitude of the injected gate current or the provided forward voltage.
Fig. 3 shows a topology of a second standby provisioning module according to an embodiment of the present invention. As shown in fig. 3, the standby switch-on module includes a voltage management circuit a, a capacitor C, a freewheeling diode, a controllable switch, an inductor, a sampling resistor and a diode D,
wherein the content of the first and second substances,
the anode and the cathode of the capacitor C are both connected to the voltage management circuit A, and the cathode of the capacitor C is connected to the anode of the freewheeling diode; one end of the controllable switch is connected to the anode of the capacitor C, and the other end of the controllable switch is connected to the cathode of the freewheeling diode and one end of the inductor; the other end of the inductor is connected to the anode of the diode D through the sampling resistor; the cathode of the diode D is connected to the gate of the power semiconductor element, e.g. IGCT; the negative pole of the capacitor C is connected to the cathode of the power semiconductor element, e.g. IGCT.
Fig. 3 is a circuit diagram in which the current limiting resistor of fig. 2 is replaced by the controllable switch, the inductor, the sampling resistor and the freewheeling diode. When the driving protection circuit is in fault, the control unit provides a signal for the second standby switch-on module to control the standby switch-on module to start working, the voltage management circuit A charges the capacitor C, and then the capacitor C injects gate current to the power semiconductor element through the controllable switch, the inductor, the sampling resistor, the freewheeling diode and the diode D. The charging voltage of the capacitor C is adjusted by changing the parameter of the voltage management circuit A, the injected gate pole current or the amplitude of the provided forward voltage is controlled, and the amplitude, the ripple wave and the like of the injected gate pole current or the provided forward voltage can be adjusted by controlling the controllable switch through the control unit.
Fig. 4 shows an IGCT drive protection circuit with a high voltage module according to another embodiment of the present invention. Fig. 4 is a view, opposite to fig. 1, of fig. 4 showing a high voltage module in place of the standby switch-on module of fig. 1.
When the drive protection circuit is in fault, if a turn-off instruction is received, the series number of the series system has redundancy, the line voltage is endured by a normally working power semiconductor element such as an IGCT, and the high-voltage module does not work; if receiving a turn-on instruction, when the control unit detects that the turn-on module or the power management module 2 has a fault, the control unit controls the high-voltage module to work, and provides a reverse high voltage for a gate of the power semiconductor element, such as an IGCT, so as to break down the gate and cause the gate to fail.
Fig. 5 shows the topology of the high voltage module in an embodiment of the invention. As shown in fig. 5, the high voltage module includes a voltage management circuit B, a high voltage capacitor, a controllable switch S and a diode D1,
wherein the content of the first and second substances,
the anode and the cathode of the high-voltage capacitor are both connected to the voltage management circuit B, and the cathode of the high-voltage capacitor is connected to one end of the controllable switch S; the other end of the controllable switch S is connected to the cathode of the diode D1; the anode of the diode D1 is connected to the gate of the power semiconductor element, such as an IGCT; the positive pole of the high-voltage capacitor is connected to the cathode of the power semiconductor element, such as an IGCT.
The voltage management circuit B is provided with an enabling control terminal, when the driving protection circuit is in fault, the voltage management circuit B receives a signal provided by the control unit to the enabling control terminal of the voltage management circuit B to control the high-voltage module to start working, an external power supply charges the high-voltage capacitor through the voltage management circuit B with or without an isolation function, and then the high-voltage capacitor provides reverse high voltage to a power semiconductor element such as an IGCT through the controllable switch S and the diode D1 to break down the gate pole. The charging voltage of the high-voltage capacitor can be adjusted by changing the parameters of the voltage management circuit B, so that the amplitude of the voltage is controlled, and the amplitude and the ripple of the reverse high voltage can also be adjusted by controlling the controllable switch S through the control unit.
Fig. 6 shows an ETO driving protection circuit with a standby power-on module according to an embodiment of the present invention, and fig. 7 shows an ETO driving protection circuit with a high-voltage module according to an embodiment of the present invention. The operation principle of fig. 6 and 7 is the same as that of fig. 1 and 4, respectively, except that the semiconductor power element in fig. 6 and 7 is ETO.
Similarly, for the power semiconductor element with the failure short-circuit mode and voltage control on and off, such as MOSFET, IGBT, etc., a safety unit comprising a standby on module or a high-voltage module can be used in the driving protection circuit, at this time, when the power semiconductor element driving protection circuit, such as MOSFET, IGBT, etc., fails, the control unit provides a signal to the enabling control terminal of the standby on module, controls the standby on module to start working, and applies a forward voltage to the gate of the power semiconductor element, such as MOSFET, IGBT, etc., to make it on; or the control unit provides a signal to the enable control terminal of the high-voltage module to control the high-voltage module to start working, and applies high voltage to the gate pole of the power semiconductor element such as MOSFET, IGBT and the like to break down and fail, thereby ensuring that the whole series system is in a conducting state.
The control method of the drive protection circuit of the power semiconductor element of the invention comprises the following steps:
the standby switch-on module injects gate current to the power semiconductor element when the driving protection circuit is in fault, so that the power semiconductor element is in a conducting state, or applies forward voltage to a gate of the power semiconductor element to enable the power semiconductor element to be conducted; or the high-voltage module provides a high voltage higher than a reverse breakdown voltage to the power semiconductor element when the drive protection circuit fails, so that the power semiconductor element fails and is in a short-circuit state.
Wherein the content of the first and second substances,
referring to fig. 2, when the driving protection circuit fails, the control unit provides a signal to the enable control terminal to control the standby power-on module to start operating, the external power supply charges the capacitor through the voltage management circuit with or without isolation function, and then the capacitor injects a gate current to a power semiconductor element, such as an IGCT, through the current limiting resistor and the diode, so that the power semiconductor element operates in a conducting state. By varying the voltage management circuit parameters, the capacitor charging voltage can be adjusted to control the magnitude of the injected gate current or the provided forward voltage.
Referring to fig. 3, when the driving protection circuit fails, the control unit provides a signal to an enable control terminal of the voltage management circuit a, an external power supply charges the capacitor C through the voltage management circuit a with or without isolation function, and then the capacitor C injects a gate current to the power semiconductor element through the controllable switch, the inductor, the sampling resistor, the freewheeling diode and the diode D. The charging voltage of the capacitor C is adjusted by changing the parameter of the voltage management circuit A, the injected gate pole current or the amplitude of the provided forward voltage is controlled, and the amplitude, the ripple wave and the like of the injected gate pole current or the provided forward voltage can be adjusted by controlling the controllable switch through the control unit.
Referring to fig. 5, when the driving protection circuit fails, the voltage management circuit B receives a signal provided by the control unit to an enable control terminal of the voltage management circuit B, and controls the high-voltage module to start operating, an external power source charges the high-voltage capacitor through the voltage management circuit B with or without isolation function, and the high-voltage capacitor provides a reverse high voltage to a power semiconductor element, such as an IGCT, through the controllable switch S and the diode D1, so as to break down the gate. The charging voltage of the high-voltage capacitor can be adjusted by changing the parameters of the voltage management circuit B, so that the amplitude of the voltage is controlled, and the amplitude and the ripple of the reverse high voltage can also be adjusted by controlling the controllable switch S through the control unit.
According to the drive protection circuit of the power semiconductor element and the control method thereof, when the drive protection circuit breaks down, if a turn-on signal is received, a standby turn-on module in the drive protection circuit injects gate current or provides forward voltage to the element, so that the element is in a conducting state; or a high-voltage module in the driving protection circuit provides a high voltage higher than a reverse breakdown voltage to the element, so that the element fails and is in a short-circuit state. When the power semiconductor element series system integrally receives a turn-on command, the drive protection circuit can ensure that the series system integrally is in a conducting state even if the drive protection circuit of a plurality of elements fails, and improves series reliability.
The first, second, … of the present invention are used only to distinguish between different devices and are not used to mark the order of connection of the devices.
Although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (12)
1. A drive protection circuit of a power semiconductor element comprises a switching-on module and a switching-off module, and is characterized by further comprising a safety unit,
wherein the content of the first and second substances,
one end of each of the turn-on module, the turn-off module and the safety unit is connected to the gate pole of the power semiconductor device, the other end of each of the turn-on module, the turn-off module and the safety unit is connected to the cathode of the power semiconductor device,
the safety unit injects gate current or provides forward voltage to the power semiconductor element when the driving protection circuit fails so that the power semiconductor element is in a conducting state, or/and provides high voltage higher than reverse breakdown voltage to the power semiconductor element so that the power semiconductor element fails and is in a short-circuit state.
2. The drive protection circuit of a power semiconductor element according to claim 1,
the safety unit comprises a standby switch-on module or a high-voltage module,
the standby switch-on module is connected between a gate and a cathode of the power semiconductor device, and injects gate current or provides forward voltage to the power semiconductor element when the driving protection circuit fails so that the power semiconductor element is in a conducting state;
the high-voltage module is connected between a gate and a cathode of the power semiconductor device, and provides a high voltage higher than a reverse breakdown voltage to the power semiconductor element when the driving protection circuit fails, so that the power semiconductor element fails and is in a short-circuit state.
3. The drive protection circuit of a power semiconductor element according to claim 2,
the standby switch-on module comprises a first voltage management circuit, a first capacitor, a current-limiting resistor and a first diode,
wherein the content of the first and second substances,
the positive electrode and the negative electrode of the first capacitor are both connected to the first voltage management circuit;
the positive electrode of the first capacitor is connected to the positive electrode of the first diode through the current-limiting resistor;
the cathode of the first diode is connected to the gate electrode of the power semiconductor element;
the negative pole of the first capacitor is connected to the cathode of the power semiconductor element,
or the standby switch-on module comprises a second voltage management circuit, a second capacitor, a freewheeling diode, a first controllable switch, an inductor, a sampling resistor and a second diode,
wherein the content of the first and second substances,
the anode and the cathode of the second capacitor are both connected to the second voltage management circuit, and the cathode of the second capacitor is connected to the anode of the freewheeling diode;
one end of the first controllable switch is connected to the anode of the second capacitor, and the other end of the first controllable switch is connected to the cathode of the freewheeling diode and one end of the inductor;
the other end of the inductor is connected to the anode of the second diode through the sampling resistor;
the cathode of the second diode is connected to the gate electrode of the power semiconductor element;
the negative electrode of the second capacitor is connected to the cathode of the power semiconductor element.
4. The drive protection circuit of a power semiconductor element according to claim 2,
the high-voltage module comprises a third voltage management circuit, a high-voltage capacitor, a second controllable switch and a third diode,
wherein the content of the first and second substances,
the positive electrode and the negative electrode of the high-voltage capacitor are both connected to the third voltage management circuit, and the negative electrode of the high-voltage capacitor is connected to one end of the second controllable switch;
the other end of the second controllable switch is connected to the cathode of the third diode;
the anode of the third diode is connected to the gate of the power semiconductor element;
the anode of the high-voltage capacitor is connected to the cathode of the power semiconductor element.
5. The drive protection circuit for a power semiconductor element according to any one of claims 1 to 4,
the safety unit is connected to an external power source.
6. The drive protection circuit for a power semiconductor element according to any one of claims 2 to 4,
the power supply management system also comprises a control unit, a first power supply management module and a second power supply management module;
the control unit is connected to the first power management module, the standby switch-on module or the high-voltage module, the switch-on module and the second power management module;
the second power management module is connected to the switching-on module and the switching-off module;
the power semiconductor element receives a turn-on instruction when the driving protection circuit is in fault, when the control unit detects that the turn-on module or the second power management module is in fault, the control unit controls the standby turn-on module to work, and injects gate current to the power semiconductor element to conduct the power semiconductor element or applies forward voltage to the gate of the power semiconductor element to conduct the power semiconductor element,
or
The power semiconductor element receives a turn-on instruction when the driving protection circuit is in fault, and when the control unit detects that the turn-on module or the second power management module is in fault, the control unit controls the high-voltage module to work, provides reverse high voltage for the gate pole of the power semiconductor element, and breaks down the gate pole to cause the gate pole to fail.
7. The drive protection circuit for a power semiconductor element according to any one of claims 1 to 4,
the power semiconductor element is an integrated gate commutated thyristor, an emitter turn-off thyristor, a MOSFET or an IGBT.
8. A control method of a drive protection circuit of a power semiconductor device according to any one of claims 1 to 7,
when the drive protection circuit is in failure, the safety unit injects gate current or provides forward voltage to the power semiconductor element to enable the power semiconductor element to be in a conducting state, or/and provides high voltage higher than reverse breakdown voltage to the power semiconductor element to enable the power semiconductor element to be in a failure and in a short-circuit state.
9. The method for controlling the drive protection circuit of the power semiconductor element according to claim 8,
the standby switch-on module in the safety unit injects gate current or provides forward voltage to the power semiconductor element when the driving protection circuit fails so that the power semiconductor element is in a conducting state,
or
The high-voltage module in the safety unit provides a high voltage higher than a reverse breakdown voltage to the power semiconductor element when the driving protection circuit fails, so that the power semiconductor element fails and is in a short-circuit state.
10. The method for controlling the drive protection circuit of the power semiconductor element according to claim 9,
the control unit provides a signal to the standby switch-on module to control the standby switch-on module to start working, the first voltage management circuit charges the first capacitor, and the first capacitor injects gate current or provides forward voltage to the power semiconductor element through the current-limiting resistor and the first diode to enable the power semiconductor element to work in a conducting state,
or
The control unit provides a signal to the standby switch-on module to control the standby switch-on module to start working, the second voltage management circuit charges the second capacitor, and the second capacitor injects gate current or provides forward voltage to the power semiconductor element through the first controllable switch, the inductor, the sampling resistor, the freewheeling diode and the second diode to enable the power semiconductor element to work in a conducting state,
or
The control unit provides a signal for the high-voltage module to control the high-voltage module to start working, the third voltage management circuit charges the high-voltage capacitor, and the high-voltage capacitor applies reverse high voltage to the gate pole of the power semiconductor element by controlling the second controllable switch.
11. The method for controlling the drive protection circuit of the power semiconductor element according to claim 10,
adjusting said first capacitor charging voltage, controlling the magnitude of said injected gate current or said provided forward voltage by changing said first voltage management circuit parameter,
or
Adjusting said second capacitor charging voltage by changing said second voltage management circuit parameter, controlling the magnitude of said injected gate current or said provided forward voltage,
or
And adjusting the charging voltage of the high-voltage capacitor by changing the parameter of the third voltage management circuit, and controlling the amplitude of the reverse high voltage.
12. The method for controlling the drive protection circuit of the power semiconductor element according to claim 10,
controlling the first controllable switch by the control unit to adjust the amplitude and ripple of the injected gate current or the provided forward voltage,
or
And the control unit controls the second controllable switch to adjust the amplitude and the ripple of the reverse high voltage.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201911090504.6A CN110830015A (en) | 2019-11-08 | 2019-11-08 | Drive protection circuit of power semiconductor element and control method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201911090504.6A CN110830015A (en) | 2019-11-08 | 2019-11-08 | Drive protection circuit of power semiconductor element and control method thereof |
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| CN111669160A (en) * | 2020-06-29 | 2020-09-15 | 中车株洲电力机车研究所有限公司 | GCT turn-off circuit and control method thereof |
| CN112234962A (en) * | 2020-12-16 | 2021-01-15 | 杭州飞仕得科技有限公司 | Power semiconductor driving circuit with dynamically controllable gate current |
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| CN113497545A (en) * | 2020-04-08 | 2021-10-12 | 南京南瑞继保工程技术有限公司 | IGCT driving device, IGCT module, electronic equipment and control method |
| CN111669160A (en) * | 2020-06-29 | 2020-09-15 | 中车株洲电力机车研究所有限公司 | GCT turn-off circuit and control method thereof |
| CN111669160B (en) * | 2020-06-29 | 2023-05-26 | 中车株洲电力机车研究所有限公司 | GCT turn-off circuit and control method thereof |
| CN112234962A (en) * | 2020-12-16 | 2021-01-15 | 杭州飞仕得科技有限公司 | Power semiconductor driving circuit with dynamically controllable gate current |
| CN113702797A (en) * | 2021-10-28 | 2021-11-26 | 清华大学 | Test circuit of semiconductor device driver and control method thereof |
| CN113702797B (en) * | 2021-10-28 | 2022-04-08 | 清华大学 | Test circuit of semiconductor device driver and control method thereof |
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