CN108092491B - Power management circuit applied to GCT device gate electrode drive - Google Patents
Power management circuit applied to GCT device gate electrode drive Download PDFInfo
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- CN108092491B CN108092491B CN201810002287.XA CN201810002287A CN108092491B CN 108092491 B CN108092491 B CN 108092491B CN 201810002287 A CN201810002287 A CN 201810002287A CN 108092491 B CN108092491 B CN 108092491B
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- 238000000034 method Methods 0.000 claims abstract description 30
- 230000008569 process Effects 0.000 claims abstract description 30
- 238000004891 communication Methods 0.000 claims abstract description 11
- 238000012544 monitoring process Methods 0.000 claims abstract description 11
- 238000002955 isolation Methods 0.000 claims abstract description 8
- 230000002159 abnormal effect Effects 0.000 claims description 12
- 239000003990 capacitor Substances 0.000 claims description 8
- 230000005611 electricity Effects 0.000 claims description 4
- 230000015556 catabolic process Effects 0.000 abstract description 4
- 230000008859 change Effects 0.000 description 3
- 230000002708 enhancing effect Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/06—Circuits specially adapted for rendering non-conductive gas discharge tubes or equivalent semiconductor devices, e.g. thyratrons, thyristors
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Power Conversion In General (AREA)
Abstract
A power management circuit applied to gate drive of a GCT device comprises a first power module, wherein the first power module is used for supplying power to modules such as a turn-off module, a turn-on module, a monitoring and communication module and the like of the GCT device; the second power module is used for managing power supply in the power-on starting and power-off processes of the GCT device; and the third power supply module is used for providing standby power supply for the first power supply module of the upper and lower adjacent stages of GCT devices and performing isolated power supply on the adjacent GCT devices. The power management circuit meets the requirement that the GCT gate drive unit directly takes power from the GCT device high-voltage side main circuit, so that high-voltage isolation power supply is not needed to be carried out on the GCT gate drive unit from low potential, the volume and the cost of the device are greatly reduced, various standby power supply modes are provided, and the reliability is improved. And a power supply management strategy for the power-on and power-off processes is added, so that voltage breakdown in the processes is effectively prevented.
Description
Technical Field
The invention belongs to the technical field of power, relates to a power electronic device, and particularly relates to a power management circuit applied to gate drive of a GCT device.
Background
The gate commutated thyristor GCT (Gate Commutated Thyristor) device is used as a high-power semiconductor switching device, is characterized by gate commutated turn-off technology, and has the advantages of low on-state voltage drop of thyristors (SCR) and gate turn-off thyristors (GTO), stable dynamic and static turn-off performance of IGBT, and the like.
The existing gate drive applied to GCT devices (such as IGCT, ETO and the like) mainly comprises a power management circuit module, an on module, an off module, a monitoring and communication module and the like as shown in figure 1. The pre-charging capacitor group with several tens of mF exists in the turn-off module of the GCT device, and in the turn-off state, the capacitor group is connected with the gate pole and the cathode pole of the GCT in parallel, so that the voltage between the gate pole and the cathode pole is kept to be reversely biased, and the anode pole and the cathode pole of the GCT can withstand rated direct current voltage or transient voltage. If the voltage between the gate and the cathode does not meet a certain reverse bias condition, the withstand voltage and the voltage change rate of the GCT cannot reach the rated withstand voltage values. The power management circuit supplies power for a dozens of mF capacitor groups of the turn-off module, the turn-on module, the monitoring and communication module and the like.
The power-up start-up process of GCT gate driving requires charging the capacitor bank to a preset voltage threshold (e.g., 20V). Because of the limited charging power of the power management circuit, the typical gate drive power-on start-up process of existing GCTs generally requires 3-5 seconds. During the charging process, the GCT is ensured to be in an off state, and a higher voltage or a voltage change rate cannot be applied between the anode and the cathode, otherwise, the GCT can be damaged by overvoltage breakdown. Therefore, in GCT applications, it is necessary to complete the GCT gate drive power-up process before applying high voltage between the anode and cathode. Correspondingly, the GCT gate driving power supply can be disconnected after the voltage between the anode and the cathode is reduced to a certain value. This also determines that the GCT gate drive cannot directly draw power from between the anode and cathode, but requires the use of a low potential other power supply loop to power the GCT gate drive unit in high voltage isolation.
In addition, under the condition of the existing power management circuit, once the external power supply fails, the gate drive cannot work normally immediately, so that the system applied by the GCT fails.
The power management circuit of the gate drive in the prior art severely limits the application of GCT, particularly in the high voltage field, and the isolation voltage level for supplying power to the GCT gate drive unit is continuously improved along with the improvement of the voltage level, so that the device volume and the power supply cost are greatly increased, and the reliability is reduced.
Disclosure of Invention
The invention provides a novel power management circuit applied to gate drive of a GCT device, which solves the defects and the shortcomings of the prior art.
The technical proposal is as follows:
a power management circuit for GCT device gate drive, for connection to an external power source, comprising:
the first power module is used for supplying power to the turn-off module, the turn-on module and the monitoring and communication module driven by the gate electrode of the GCT device;
the second power module is electrically coupled with the first power module and is used for managing power supply in the power-on starting and power-off processes of the GCT device and carrying out standby power supply on the first power module by utilizing voltage between an anode and a cathode of the GCT device;
the first power module and the second power module are electrically coupled with an external power supply, and the external power supply supplies power for the first power module and the second power module.
The power supply system further comprises a third power supply module electrically coupled with the first power supply modules of the upper and lower adjacent stages of GCT devices, and used for providing standby power supply for the first power supply modules of the upper and lower adjacent stages of GCT devices and performing standby isolation power supply for the adjacent GCT devices; the first power module is electrically coupled to the third power module to supply power to the third power module.
The second power module is used for providing a certain reverse bias voltage between the gate and the cathode of the GCT device or short-circuiting the gate and the cathode of the GCT device when the capacitor of the turn-off circuit module is not charged in the power-on process of the GCT device.
The second power supply module is configured to provide a certain reverse bias voltage between a gate and a cathode of the GCT device or short-circuit the gate and the cathode of the GCT device under a condition that a capacitance voltage of the turn-off circuit module is low in a power-off process of the GCT device.
And in the processes of power-on, power-off and normal operation of the GCT device, the second power module is used for supplying power to the first power module by utilizing the voltage between the anode and the cathode of the GCT device, the external power supply is turned off, and the power supply of the external power supply is reduced.
When the external power supply is abnormal and a third power supply module of the adjacent-stage GCT device is abnormal, the second power supply module takes power from the voltage between the anode and the cathode of the GCT device, and the first power supply module supplies power for the on module and the off module.
When the external power supply is abnormal and the second power supply module is abnormal, the third power supply module of the adjacent-stage GCT device supplies power for the on module and the off module through the first power supply module.
The threshold value of the reverse bias voltage between the gate electrode and the cathode electrode provided by the second power supply module is equal to or lower than the preset threshold value of the voltage of the first power supply module, and the reverse bias voltage between the gate electrode and the cathode electrode preset by the second power supply module is quickly charged when the anode voltage and the cathode voltage of the GCT device are increased to lower voltages in the power-on process of the GCT device. And the reverse bias voltage between the gate electrode and the cathode electrode provided by the second power supply module is maintained until the voltage between the anode electrode and the cathode electrode of the GCT device is reduced below a safe value.
And when the voltage of the anode and the cathode of the GCT device rises to a lower voltage in the electrifying process of the GCT device, the second power supply module rapidly shorts the gate and the cathode.
And the second power supply module maintains the gate electrode and the cathode electrode of the GCT device to be short-circuited until the voltage between the anode electrode and the cathode electrode of the GCT device is reduced below a safe value.
The first, second and third power supply modules can feed back the state information of the first power supply module, the second power supply module and the external power supply module to the monitoring and communication module; and the monitoring and communication module reports the state information to a superior system.
Wherein the GCT device and the gate electrode drive together form an IGCT device or an ETO device.
By adopting the technical scheme, the invention has the beneficial effects that:
1) The requirement that the GCT gate electrode driving unit directly takes electricity from a main circuit at the high-voltage side of a GCT device is met, so that the gate electrode driving unit of the GCT does not need to be subjected to high-voltage isolation power supply from low potential, the volume and the cost of the device are greatly reduced, and the reliability is improved;
2) Providing a plurality of standby power supply modes, and enhancing the reliability;
3) And a power supply management strategy for the power-on and power-off processes is added, so that voltage breakdown in the processes is effectively prevented.
Drawings
FIG. 1 prior art power management circuit for gate drive of GCT device
Figure 2 the invention is applied to an embodiment of a novel power management circuit for gate drive of a GCT device.
Detailed Description
Specific embodiments of the present invention will be further described with reference to the drawings and the technical scheme of the present invention.
The novel power management circuit applied to the gate drive of the GCT device, as shown in fig. 2, comprises a first power module, wherein in the normal working process, power is supplied to a dozens of mF capacitor groups, an opening module, a monitoring and communication module and other modules of a turn-off module of the GCT device; the second power module is electrically coupled with the first power module and is used for managing power supply in the power-on starting and power-off processes of the GCT device and supplying power for the first power module in a standby mode by utilizing voltage between an anode and a cathode of the GCT device. The second power supply module is mainly used for providing a certain reverse bias voltage between the gate and the cathode of the GCT device or short-circuiting the gate and the cathode of the GCT device when the capacitor of the turn-off circuit module is not charged in the power-on process of the GCT device; and under the condition that the capacitance voltage of the turn-off circuit module is lower in the power-off process of the GCT device, providing a certain reverse bias voltage between the gate electrode and the cathode electrode of the GCT device, or short-circuiting the gate electrode and the cathode electrode of the GCT device. In the process of powering on, powering off and normal working of the GCT device, the second power module supplies power to the first power module by utilizing the voltage between the anode and the cathode of the GCT device, the external power is turned off, and the power supply of the external power is reduced, so that the GCT device can withstand rated direct current, transient voltage and voltage change rate.
The third power module is electrically coupled with the first power module of the upper and lower adjacent stages of GCT devices and is used for providing standby power for the first power module of the upper and lower adjacent stages of GCT devices and performing standby isolation power supply for the adjacent GCT devices; the first power module is electrically coupled to the third power module to supply power to the third power module.
In addition, when the external power supply is abnormal and the third power supply module of the GCT device of the adjacent stage is abnormal, the second power supply module of the stage can also take electricity from the anode voltage and the cathode voltage of the GCT, and short-time power supply is carried out for the on module and the off module through the first power supply module, so that buffer time is provided for fault protection of a system applied to the GCT.
When the external power supply is abnormal and the second power supply module is abnormal, the third power supply module of the adjacent-stage GCT device supplies power for the on module and the off module through the first power supply module of the stage.
As shown in fig. 2, each power module is connected by a dotted line to supply power to the corresponding structural component; the monitoring and communication module is connected with the monitored control modules such as the on module, the off module, the third power module and the like through dotted lines to monitor the monitored control modules; the first, second and third power supply modules can feed back the state information of the first power supply module, the second power supply module and the external power supply module to the monitoring and communication module; the monitoring and communication module reports the state information to a superior system; the switching-on module, the switching-off module, the second power module and the like are respectively connected with the gate electrode and the cathode electrode of the GCT device through solid lines.
The reverse bias voltage threshold value between the gate electrode and the cathode electrode provided by the second power supply module is equal to or lower than the preset voltage threshold value of the first power supply module, and the reverse bias voltage threshold value between the gate electrode and the cathode electrode preset by the second power supply module is quickly charged when the anode voltage and the cathode voltage of the GCT device rise to lower voltages in the power-on process of the GCT device.
And the reverse bias voltage between the gate electrode and the cathode electrode provided by the second power supply module is maintained until the voltage between the anode electrode and the cathode electrode of the GCT device is reduced below a safe value.
And the second power supply module is used for rapidly short-circuiting the gate electrode and the cathode electrode when the voltage of the anode electrode and the cathode electrode of the GCT device rises to a lower voltage in the electrifying process of the GCT device. And the second power supply module maintains the gate electrode and the cathode electrode of the GCT device to be short-circuited until the voltage between the anode electrode and the cathode electrode of the GCT device is reduced below a safe value.
In order to improve the power supply reliability of the power supply management circuit in high-voltage cascade application and prevent driving power failure caused by the failure of a power supply module for supplying power to a driving unit at one stage, the power supply management module of each sub-module is used as a standby power supply of two front and rear adjacent sub-modules to carry out isolated power supply on the adjacent sub-modules.
In summary, the power management circuit applied to the gate driving of the GCT device has the advantages that:
1) The requirement that the GCT gate electrode driving unit directly takes electricity from a main circuit at the high-voltage side of a GCT device is met, so that the gate electrode driving unit of the GCT does not need to be subjected to high-voltage isolation power supply from low potential, the volume and the cost of the device are greatly reduced, and the reliability is improved;
2) Providing a plurality of standby power supply modes, and enhancing the reliability;
3) And a power supply management strategy for the power-on and power-off processes is added, so that voltage breakdown in the processes is effectively prevented.
Although the invention has been described in terms of the above embodiments, those skilled in the art will recognize that the invention can be practiced with modification within the spirit and scope of the appended claims. All such variations and modifications are intended to fall within the scope of the appended claims. Accordingly, the examples and figures are to be regarded as illustrative rather than restrictive.
Claims (8)
1. A power management circuit applied to GCT device gate drive is connected with an external power supply, and is characterized in that:
comprising the following steps:
the first power module is used for supplying power to the turn-off module, the turn-on module and the monitoring and communication module driven by the gate electrode of the GCT device;
the second power module is electrically coupled with the first power module and is used for managing power supply in the power-on starting and power-off processes of the GCT device and carrying out standby power supply on the first power module by utilizing voltage between an anode and a cathode of the GCT device;
the first power supply module and the second power supply module are electrically coupled with an external power supply, and the external power supply supplies power for the first power supply module and the second power supply module;
the managing includes:
in the process of powering up the GCT device, when the capacitor of the turn-off circuit module is not charged, the second power module provides a certain reverse bias voltage for the gate electrode and the cathode electrode of the GCT device, or short-circuits the gate electrode and the cathode electrode of the GCT device; or,
and in the process of power failure of the GCT device, under the condition that the capacitance voltage of the turn-off circuit module is low, the second power module provides a certain reverse bias voltage for the space between the gate electrode and the cathode electrode of the GCT device, or short-circuits the gate electrode and the cathode electrode of the GCT device.
2. The power management circuit of claim 1, wherein:
the power management circuit further comprises a third power module electrically coupled to the first power modules of the upper and lower adjacent stages of GCT devices, and used for providing standby power for the first power modules of the upper and lower adjacent stages of GCT devices and performing standby isolation power supply on the adjacent stages of GCT devices; the first power module is electrically coupled to the third power module to supply power to the third power module.
3. The power management circuit of claim 2, wherein:
when the external power supply is abnormal and a third power supply module of the GCT device of the adjacent stage is abnormal, the second power supply module takes electricity from the voltage between the anode and the cathode of the GCT device, and the first power supply module supplies power for the on module and the off module.
4. The power management circuit of claim 1, wherein:
the threshold value of the reverse bias voltage between the gate and the cathode of the GCT device provided by the second power supply module is equal to or lower than the preset threshold value of the voltage of the first power supply module, and the GCT device is quickly charged to the threshold value of the reverse bias voltage between the gate and the cathode preset by the second power supply module when the voltage between the anode and the cathode of the GCT device rises to a lower voltage in the power-on process of the GCT device; and the second power supply module provides reverse bias voltage between the gate electrode and the cathode electrode of the GCT device, and maintains the voltage between the anode electrode and the cathode electrode of the GCT device until the voltage is lower than a safe value.
5. The power management circuit of claim 1, wherein:
the second power supply module is used for rapidly short-circuiting the gate electrode and the cathode electrode of the GCT device when the voltage between the anode electrode and the cathode electrode of the GCT device rises to a lower voltage in the process of electrifying the GCT device; and the second power supply module maintains the gate electrode and the cathode electrode of the GCT device to be short-circuited until the voltage between the anode electrode and the cathode electrode of the GCT device is reduced below a safe value.
6. The power management circuit of claim 1, wherein:
and in the processes of power-on, power-off and normal operation of the GCT device, the second power module is used for supplying power to the first power module by utilizing the voltage between the anode and the cathode of the GCT device, the external power supply is turned off, and the power supply of the external power supply is reduced.
7. The power management circuit of claim 2, wherein:
and when the external power supply is abnormal and the second power supply module is abnormal, the third power supply module of the adjacent-stage GCT device supplies power for the on module and the off module through the first power supply module.
8. The power management circuit according to any one of claims 1-7, wherein:
the GCT device is an IGCT device or an ETO device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810002287.XA CN108092491B (en) | 2018-01-02 | 2018-01-02 | Power management circuit applied to GCT device gate electrode drive |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810002287.XA CN108092491B (en) | 2018-01-02 | 2018-01-02 | Power management circuit applied to GCT device gate electrode drive |
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| CN108092491B true CN108092491B (en) | 2024-03-12 |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113497545B (en) * | 2020-04-08 | 2022-06-28 | 南京南瑞继保工程技术有限公司 | IGCT driving device, IGCT module, electronic equipment and control method |
| CN112803373B (en) * | 2020-12-14 | 2024-05-07 | 株洲中车时代半导体有限公司 | Power semiconductor device protection circuit, control method, storage medium, and apparatus |
| CN114726357B (en) * | 2022-05-17 | 2022-09-09 | 清华大学 | Driving circuit of turn-off thyristor and control method |
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