CN106570261A - Parameter extraction method for integrated gate commutated thyristor drive turn-off circuit and continuing current circuit - Google Patents

Abstract

A parameter extraction method for integrated gate commutated thyristor drive turn-off circuit and continuing current circuit. The method consists of the following steps: S1. analyzing running characteristics of the integrated gate commutated thyristor drive circuit and the continuing current circuit, proposing an equivalent circuit during the integrated gate commutated thyristor turn-off transient continuing current process; S2. according to the equivalent circuit obtained in S1, deducing voltage expressions of the integrated gate commutated thyristor in different states; S3, carrying out a unijunction transistor testing experiment of the integrated gate commutated thyristor, by virtue of a specific clamping voltage and experiment results of electric quantities of the integrated gate commutated thyristor and the continuing current circuit when current is turned off during the integrated gate commutated thyristor turn-off transient process, proposing the parameter extraction method for the integrated gate commutated thyristor drive turn-off circuit and continuing current circuit; and S4,for the integrated gate commutated thyristor, carrying out experiments on different voltage grades and the turn-off circuits, through processing of the different experiment results, determining parameter values of the integrated gate commutated thyristor drive turn-off circuit and continuing current circuit.

Description

Breaking circuit and the parameter of continuous current circuit is driven to carry for integrated gate commutated thyristor Take method

Technical field

The present invention relates to a kind of integrated gate commutated thyristor drives the parameter extracting method of breaking circuit and continuous current circuit.

Background technology

Integrated gate commutated thyristor (integrated gate commutated thyristor, IGCT) is by core device Part door pole stream-exchanging thyristor (gate commutated thyristor, GCT) is constituted with integral gate circuit two parts, with door Based on pole cut-off crystal brake tube (gate turn-off thyristor, GTO), by transparent anode, buffer layer structure and door Extremely hard actuation techniques, make IGCT possess more powerful switching characteristic, it is to avoid GTO transistor AND gates in shut-off transient process are brilliant The working condition that brake tube coexists, while the high power handling capability of GTO is inherited, by the general of various countries world community scientific research personnel All over concern, correlative study and its extensively promotes it to be used widely in mesohigh converter plant and relevant device.IGCT's Turn-off capacity is in close relations with gate-drive breaking circuit integrated inductor, because IGCT is used GCT and gate-drive electricity Road is integrated in same printed circuit board, makes gate-drive breaking circuit integrated inductor extremely low, only counts nanohenry, therefore IGCT need not Absorbing buffer circuit can shut-off kilo-ampere electric current.

At present, the research work for turning off transient state relevant issues with regard to IGCT is increasingly becoming study hotspot, including with regard to IGCT Change of current Mechanism Study, the optimization design research of gate drive circuit, grinding using drive circuit operation characteristic calculating IGCT junction temperatures Study carefully etc., but breaking circuit itself is driven on the integral gate for controlling IGCT shut-offs and the continuous current circuit of its turn-off characteristic is affected Research work be related to it is less.And, the IGCT two ends being applied in high-power current converting device are provided with fly-wheel diode, are bridge Arm provides continuous current circuit, while avoiding IGCT pressure-bearings too high and damaging.Because IGCT turns off the starting stage of transient state, reverse door Pole driving voltage will make fly-wheel diode bear positive bias and turn on, then the operation characteristic for making fly-wheel diode is also turned off to IGCT Transient state produces impact.Document《A Method to Extract the Accurate Junction Temperature of an IGCT During Conduction Using Gate–Cathode Voltage》Pay close attention to experiment in combination with emulation Method extract junction temperature when IGCT runs, and document《Impact of the anti-paralleled diode to IGCT turn off process》Only analyze Impact of the IGCT anti-paralleled diodes to IGCT turn off process, and exist really using experimental result explanation impact, but do not relate to And the impact of the operating condition of the whole continuous current circuit comprising IGCT gate-drive breaking circuits.

The content of the invention

The purpose of the present invention is the shortcoming for overcoming prior art, proposes that a kind of driving for integrated gate commutated thyristor is closed The parameter extracting method of deenergizing and continuous current circuit.The present invention adopts method of the theory analysis in combination with experimental result, realizes Integrated gate commutated thyristor drives the extraction of breaking circuit and continuous current circuit key parameter.

Integrated gate commutated thyristor of the present invention drives the concrete step of the parameter extracting method of breaking circuit and continuous current circuit It is rapid as follows：

Step 1：Analysis Drive Circuit of Integrated Gate Commutated Thyristor and continuous current circuit operation characteristic, propose that integral gate is changed Stream IGCT shut-off transient state afterflow process equivalent circuit；

Step 2：Integrated gate current IGCT terminal voltage in different conditions is derived according to the equivalent circuit that step 1 is obtained Expression formula；

Step 3：The integrated gate commutated thyristor single tube test experiments of specific clamp voltage and cut-off current are carried out, by Integrated gate commutated thyristor turns off transient process integrated gate commutated thyristor and each electric parameters experimental result of continuous current circuit, carries Go out the parameter extracting method that integrated gate commutated thyristor drives breaking circuit and continuous current circuit；

Step 4：Different electric pressures and cut-off current experiment are carried out for integrated gate commutated thyristor, by difference The process of experimental result, determines that integrated gate commutated thyristor drives the parameter value of breaking circuit and continuous current circuit.

Each step is described as follows：

1. in step 1 described in, integrated gate commutated thyristor shut-off transient state afterflow process equivalent circuit includes forward conduction Stage equivalent circuit, electric current ascent stage equivalent circuit, shut-off and Reverse recovery stage equivalent circuit and resonant stage equivalent electric Road；

2. in step 2 described in, in the integrated gate commutated thyristor shut-off transient state afterflow process equivalent circuit of different phase, Integrated gate commutated thyristor terminal voltage expression formula is different, including terminal voltage expression formula v in forward conduction stage_AK1, electric current rise Terminal voltage expression formula v in stage_AK2, shut-off and the Reverse recovery stage terminal voltage v_AK3Expression formula：

Wherein, V_GUTo turn off transient state driving power supply, L_nFor gate-drive breaking circuit integrated inductor, i_D1For fly-wheel diode Electric current, i_GFor gate current, V_TFor the built-in PNP transistor on-state voltage drop of integrated gate commutated thyristor, v_PNPChange for integral gate The built-in PNP transistor resistance state pressure drop of stream IGCT；

3. in step 3 described in, specific integrated gate commutated thyristor clamps voltage V_AKFor 2000V, cut-off current I_AFor 2000A, in integrated gate commutated thyristor shut-off transient process, integrated gate commutated thyristor and continuous current circuit electric parameters are tested As a result integrated gate commutated thyristor terminal voltage v is included_AKWith anode current i_A, fly-wheel diode electric current i_D1And main circuit current i_T；

4. in step 3 described in, integrated gate commutated thyristor drives the parameter of breaking circuit and continuous current circuit to include the change of current Time T_C, gate-drive breaking circuit integrated inductor L_n, continuous current circuit equivalent inductance L₁And equivalent capacity C₁。

5. in the step 3 described in, commutation time T_CExtracting method be using integrated gate commutated thyristor turn off transient state When terminal voltage v_AKAnd fly-wheel diode electric current i_D1Shut-off transient state experimental waveform direct measurement extract；

6. in the step 3 described in, gate-drive breaking circuit integrated inductor L_nExtracting method be to be changed using integral gate Terminal voltage v during stream IGCT shut-off transient state_AKAnd fly-wheel diode electric current i_D1Shut-off transient state experimental waveform, asked by formula (7) ：

Wherein, v_AK1For forward conduction stage integrated gate commutated thyristor terminal voltage, v_AK2It is integrated for electric current ascent stage Door pole stream-exchanging thyristor terminal voltage, I_TFor main circuit current, T_CFor commutation time；

7. in the step 3 described in, continuous current circuit equivalent inductance L₁Extracting method be to utilize integrated gate commutated thyristor Terminal voltage v during shut-off transient state_AKAnd fly-wheel diode electric current i_D1Shut-off transient state experimental waveform, tried to achieve by formula (8)：

Wherein, v_AK2For electric current ascent stage integrated gate commutated thyristor terminal voltage, i_D1For main circuit current；

8. in the step 3 described in, continuous current circuit equivalent capacity C₁Extracting method be to utilize integrated gate commutated thyristor Terminal voltage v_AKWith anode current i_A, fly-wheel diode electric current i_D1, main circuit current i_TShut-off transient state experimental waveform, by formula (5) try to achieve：

Wherein, L_nFor gate-drive breaking circuit integrated inductor, L₁For continuous current circuit equivalent inductance, T is cycle of oscillation；

9. in the step 4 described in, different electric pressures and cut-off current be respectively 700V/700A, 1000V/1000A, 1500V/1500A, 2000V/2000A, theory analysis is the equivalent circuit described in above-mentioned 1～8 and extracting method, and experiment is It is single to cross test experiments, finally by the integrated electricity of gate-drive breaking circuit extracted when taking different electric pressures and cut-off current Sense L_n, continuous current circuit equivalent inductance L₁And equivalent capacity C₁The algebraic mean value of parameter, you can determine L_n、L₁、C₁Actual value.

The present invention is based on the theory analysis that breaking circuit and continuous current circuit are driven to integrated gate commutated thyristor, with reference to reality Checking, it is proposed that one kind need not destroy IGCT gate drive circuit structures, you can effectively extract integrated gate commutated thyristor Breaking circuit and continuous current circuit parameter are driven, extraction process is simple and easy to do, be capable of achieving integrated gate commutated thyristor and drive shut-off The performance detection of circuit actual condition, predicts the drive circuit life-span, it is ensured that the safe operation of IGCT, and controls commutation time T_CAnd Gate-drive breaking circuit integrated inductor L_nIt is the emphasis of IGCT driving breaking circuit designs, the accurate extraction of the two is to driving electricity The research on road and improve work there is reference value.

Description of the drawings

Fig. 1 is parameter extracting method flow chart of the present invention；

Fig. 2 a are the fractionation structural representation of door pole stream-exchanging thyristor pair transistor equivalent structure；

Fig. 2 b are the schematic equivalent circuit of door pole stream-exchanging thyristor pair transistor equivalent structure；

Fig. 3 a are gate-drive breaking circuit running status schematic diagram when IGCT turns off transient state；

Gate-drive breaking circuit running status schematic diagram when Fig. 3 b are IGCT off-states；

Fig. 4 a are that IGCT turns off transient state afterflow process forward conduction stage schematic equivalent circuit；

Fig. 4 b are that IGCT turns off transient state afterflow process electric current ascent stage schematic equivalent circuit；

Fig. 4 c are that IGCT turns off transient state afterflow process shutdown and Reverse recovery stage schematic equivalent circuit；

Fig. 4 d are that IGCT turns off transient state afterflow process resonant stage schematic equivalent circuit；

Fig. 5 is that IGCT is mono- crosses test platform schematic diagram；

When Fig. 6 a are electric pressure 2000V, cut-off current 2000A, IGCT turns off IGCT terminal voltages v of transient state_AKWith anode Electric current i_A, main circuit current i_T, fly-wheel diode electric current i_D1Experimental waveform figure；

When Fig. 6 b are electric pressure 2000V, cut-off current 2000A, IGCT turns off IGCT terminal voltages v of transient state_AKWith afterflow Diode current i_D1Experimental waveform partial enlarged drawing；

When Fig. 7 a are electric pressure 700V, cut-off current 700A, IGCT turns off IGCT terminal voltages v of transient state_AKWith anode electricity Stream i_A, main circuit current i_T, fly-wheel diode electric current i_D1Experimental waveform figure, and v_AKWith i_D1Experimental waveform partial enlarged drawing；

When Fig. 7 b are electric pressure 1000V, cut-off current 1000A, IGCT turns off IGCT terminal voltages v of transient state_AKWith anode Electric current i_A, main circuit current i_T, fly-wheel diode electric current i_D1Experimental waveform figure, and v_AKWith i_D1Experimental waveform partial enlarged drawing；

When Fig. 7 c are electric pressure 1500V, cut-off current 1500A, IGCT turns off IGCT terminal voltages v of transient state_AKWith anode Electric current i_A, main circuit current i_T, fly-wheel diode electric current i_D1Experimental waveform figure, and v_AKWith i_D1Experimental waveform partial enlarged drawing.

Specific embodiment

The present invention is further illustrated below in conjunction with the drawings and specific embodiments.

Fig. 1 is parameter extracting method flow chart of the present invention.As shown in Figure 1, the present invention is comprised the steps of：Step 1：Analysis Drive Circuit of Integrated Gate Commutated Thyristor and continuous current circuit operation characteristic, propose that integrated gate commutated thyristor shut-off transient state continues Stream process equivalent circuit；Step 2：The equivalent circuit obtained according to step 1 derives integrated gate current IGCT in different conditions When terminal voltage expression formula；Step 3：Carry out specific clamp voltage to test with the integrated gate commutated thyristor single tube of cut-off current Experiment, by integrated gate commutated thyristor transient process integrated gate commutated thyristor and each electric parameters reality of continuous current circuit are turned off Result is tested, proposes that integrated gate commutated thyristor drives the parameter extracting method of breaking circuit and continuous current circuit；Step 4：For Integrated gate commutated thyristor carries out different electric pressures and cut-off current experiment, by the process to different experiments result, really Determine the parameter value that integrated gate commutated thyristor drives breaking circuit and continuous current circuit；

1. step 1：Analysis Drive Circuit of Integrated Gate Commutated Thyristor and continuous current circuit operation characteristic, propose integral gate Commutated thyristor turns off transient state afterflow process equivalent circuit：

Fig. 2 a and Fig. 2 b are respectively the fractionation structural representation of door pole stream-exchanging thyristor pair transistor equivalent structure and equivalent Circuit diagram.As shown in Figure 2 a and 2 b, door pole stream-exchanging thyristor GCT thematic structures are still by typical " four layer of three knot " structure Into that is, its operation principle can be equivalent with double transistor structure.A, K, G be respectively the anode of door pole stream-exchanging thyristor GCT, negative electrode and Gate terminal, equivalent built-in PNP and NPN are interconnected, and the former base stage is respectively the colelctor electrode and base stage of the latter, shape with colelctor electrode Into positive feedback structure.When driver element provides forward voltage, by terminal G Injection Currents, equivalent to providing for built-in NPN Base electric current, makes built-in NPN take the lead in turning on.After built-in NPN conductings, its collector current provides sufficiently large base for built-in PNP Electrode current, makes built-in PNP turn on therewith, and built-in PNP collector electric current provides base current for built-in NPN, is so far formed Positive feedback process, door pole stream-exchanging thyristor GCT is changed into on-state by off-state when the two reaches saturation state；When driver element is carried During for backward voltage, by terminal G extract out electric current, then built-in NPN lose base electric current, the rapid change of current of cathode current to gate pole, Cause door pole stream-exchanging thyristor GCT to be changed into the PNP for losing base current by IGCT, gradually turn off anode current.

Gate-drive breaking circuit running status schematic diagram when Fig. 3 a, Fig. 3 b are respectively IGCT shut-off transient state and off-state.Such as Shown in Fig. 3 a, breaking circuit switch S closures are driven during IGCT shut-off transient state, drive breaking circuit to enter working condition, reverse swing door Pole driving voltage V_GUBuilt-in NPN emitter junctions two ends are put on, emitter inverse is blocked and is deactivated, N⁺Side electric current I_inReduce Gate pole is commutated to completely for 0, IGCT cathode currents, and door pole stream-exchanging thyristor GCT is gradually closed in the PNP forms for losing Base injection It is disconnected.As shown in Figure 3 b, logical to avoid IGCT from opening by mistake, driving circuit structure is constant during off-state, and door-negative electrode bears all the time reverse bias electricity Pressure.

Fig. 4 a, Fig. 4 b, Fig. 4 c, Fig. 4 d are respectively IGCT shut-off transient state afterflow process forward conduction stage equivalent circuits and illustrate Figure, electric current ascent stage schematic equivalent circuit, shut-off and Reverse recovery stage schematic equivalent circuit and resonant stage are equivalent Circuit diagram.As shown in Fig. 4 a, Fig. 4 b, Fig. 4 c, Fig. 4 d, according to sustained diode₁Working condition condition IGCT shut-offs is temporary State afterflow process equivalent circuit has been divided into four-stage, respectively forward conduction stage, electric current ascent stage, shut-off and reversely extensive Multiple stage, resonant stage.

The forward conduction stage：Built-in NPN emitter junctions are equivalent to D_in, L₁For IGCT and sustained diode₁Constituted afterflow is returned The equivalent inductance on road, S is in closure state to drive breaking circuit switch, when IGCT is turned off.When turning off the transient state change of current because of IGCT Between it is extremely short, stage IGCT not yet bears main circuit pressure drop, and built-in PNP pressure drops are about IGCT on-state voltage drop V_T, can be considered constant pressure Source, main circuit current I_TIt is constant, can be considered constant-current source, cathode current i_inFrom D_inCommutate to gate pole, gate current i_GConstantly increase, Final i_in0 is reduced to, then i_GEqual to I_T, L_nOnly count nanohenry, V_TIt is less, V_GUUsually 20V, therefore v_AK1<0, i.e. anode terminal A is relative In cathode terminal K be electronegative potential, then sustained diode₁Bear forward bias and turn on, electric current is i_D1, then can obtain such as Fig. 4 a institutes The forward conduction stage schematic equivalent circuit for showing.

Electric current ascent stage：The stage current has completed to commutate to gate pole, cathode side diode D by negative electrode_inReversely cut-off Working condition is had dropped out, therefore meets i_GEqual to i_A, i_AComprising I_TAnd i_D1Two components, stage I_TWith V_TStill can be considered constant-current source with Constant pressure source, now, v_AK2It is still negative value, i_D1| v_AK2| persistently rise under effect, simultaneous shut-off transient state P base carrier Further detach, then electric current ascent stage schematic equivalent circuit as shown in Figure 4 b can be obtained on the basis of Fig. 4 a.

Shut-off and Reverse recovery stage：IGCT turns off the latter stage of transient state memory phase, and IGCT remains on the energy of electric current Power, i.e. I_TIt is constant, but N bases have started to bear external voltage, therefore built-in PNP pressure drops begin to ramp up, and are no longer V_T.Because of IGCT morning It is changed into the transistor for losing base current by IGCT, therefore replaces constant pressure source, pressure-bearing to be changed into v with the hanging PNP of base stage_PNP, With v_PNPIncrease, v_AK30 is leveled off to by negative, cause di_D1/ dt reduces therewith, but due to v_PNPRapid increase, the state holds The continuous time is extremely short, when anode terminal A opposing cathode terminal K are changed into high potential, v_AK3>When 0, D₁Bear reversed bias voltage and enter shut-off State, i_D1It is rapid to reduce and into the Reverse recovery stage, then shut-off as illustrated in fig. 4 c and reversely can be obtained on the basis of Fig. 4 b Restoration stage schematic equivalent circuit.

Resonant stage：Due to v_PNPRapid increase, anode current i_AThe decline stage of transient state, therefore main electricity are turned off in IGCT Road electric current i_TReduce therewith, be no longer equivalent to constant-current source I_T.Sustained diode₁After reverse recovery current returns to 0 for the first time, by In IGCT and sustained diode₁There is equivalent capacity C in the continuous current circuit of composition₁, cause sustained diode₁It is incomplete immediately Cut-off.Now, IGCT and sustained diode₁Almost equal external voltage is born, internal pressure-bearing PN junction barrier region broadens, makes The two shows barrier capacitance effect.Now, built-in PNP and sustained diode₁Ideal component is accordingly to be regarded as, is only used for bearing External voltage, then can obtain resonant stage schematic equivalent circuit as shown in figure 4d on the basis of Fig. 4 c.

2. step 2：The equivalent circuit obtained according to step 1 derives integrated gate current IGCT end electricity in different conditions The expression formula of pressure：

The forward conduction stage：IGCT terminal voltages v can be obtained by Fig. 4 a_AK1Expression formula：

Electric current ascent stage：IGCT anode current i can be obtained by Fig. 4 b_AAnd terminal voltage v_AK2Expression formula：

i_A=i_G=I_T+i_D1 (2)

Shut-off and Reverse recovery stage：IGCT terminal voltages v can be obtained by Fig. 4 c_AK3Expression formula：

Resonant stage：From Fig. 4 d, IGCT and D₁The continuous current circuit of composition constitutes series resonant circuit, cycle of oscillation T Table below is met up to formula：

In formula (1)～(5), V_GUTo turn off transient state driving power supply, L_nFor gate-drive breaking circuit integrated inductor, L₁It is continuous Flow back to road equivalent inductance, C₁For continuous current circuit equivalent capacity, i_D1For fly-wheel diode electric current, i_GFor gate current, i_TFor main circuit Electric current, V_TFor the built-in PNP transistor on-state voltage drop of integrated gate commutated thyristor, v_PNPIt is built-in for integrated gate commutated thyristor PNP transistor resistance state pressure drop, T is cycle of oscillation.

3. step 3：The integrated gate commutated thyristor single tube test experiments of specific clamp voltage and cut-off current are carried out, is borrowed Integrated gate commutated thyristor shut-off transient process integrated gate commutated thyristor and each electric parameters experimental result of continuous current circuit are helped, Propose that integrated gate commutated thyristor drives the parameter extracting method of breaking circuit and continuous current circuit：

Fig. 5 is IGCT single tube test platform schematic diagrams, for obtaining when different electric pressures and cut-off current, integral gate Commutated thyristor turns off the electric parameters experimental result of transient process integrated gate commutated thyristor and continuous current circuit, including integrated door Pole commutated thyristor terminal voltage v_AKWith anode current i_A, fly-wheel diode electric current i_D1, main circuit current i_T.According to experiment demand, This test platform sends pulse optically-controlled signal with resistance that resistance is 1 ohm as load using external control circuit, is input to IGCT drive circuits, realize the pulse work of IGCT.In Fig. 5, IGCT is the 4500V/4000A grades of ABB AB's production 5SHY 35L4520 type products, sustained diode₁For the D1331SH 45T type products of company of Infineon production.

When Fig. 6 a are electric pressure 2000V, cut-off current 2000A, IGCT turns off IGCT terminal voltages v of transient state_AKWith afterflow Diode current i_D1Experimental waveform partial enlarged drawing；When Fig. 6 b are electric pressure 2000V, cut-off current 2000A, IGCT shut-offs are temporary IGCT terminal voltages v of state_AKWith fly-wheel diode electric current i_D1Experimental waveform partial enlarged drawing.Using Fig. 4 a, Fig. 4 b, Fig. 4 c, Fig. 4 d Theory analysis and Fig. 6 a, the experimental result of Fig. 6 b, you can extract integrated gate commutated thyristor and drive breaking circuit and afterflow The parameter in loop, including commutation time T_C, gate-drive breaking circuit integrated inductor L_n, continuous current circuit equivalent inductance L₁And it is equivalent Electric capacity C₁。

Commutation time T_CExtracting method：IGCT turns off the current changing rate di in transient state change of current stage_G/ dt greatly, makes L_nProduce The larger sensing pressure drop of life, from formula (1), (3), IGCT terminal voltages v in change of current stage_AK1Absolute value is significantly less than i_D1Electric current The v of ascent stage_AK2Absolute value, therefore v_AK1Duration is commutation time T_C.According to above-mentioned analysis, when 1. being continued by Fig. 6 b-stages Between understand commutation time T_C=229ns.

Gate-drive breaking circuit integrated inductor L_nExtracting method：The change of current stage is big by the electric current that negative electrode commutates to gate pole It is little for anode current I to be turned off_T, and the current changing rate in change of current stage is much larger than each stage i_D1Rate of change, then di_D1/ dt exists The change of current stage is to L_nSensing pressure drop v_LnAffect less, v_LnMainly by I_TCommutating speed is determined.With reference to Fig. 6 b-stages 1. with formula (1), (3), change of current stage v can be obtained_LnExpression formula：

|v_Ln|=| v_AK1-v_AK2| (6)

And then L can be obtained_nExpression formula：

Now, current of commutation I_T=2000A, commutation time T_C=229ns, from Fig. 6 b | v_AK1|=6.0V, | v_AK2|= 18.3V, substituting into formula (7) can obtain L_n=1.41nH.

Continuous current circuit equivalent inductance L₁Extracting method：Observe Fig. 6 b-stages 2. to understand, i_D1The ending of electric current ascent stage Part, built-in PNP has started to pressure-bearing, causes | v_AK2| reduce, then i_D1The rate of climb gradually slows down therewith, but the stage initial portion Divide v_AK2And di_D1/ dt is more stable, and D₁On-state voltage drop is less negligible, understands with reference to equivalent circuit diagram 4b, v_AK2Almost all Land in L₁Two ends, therefore stage v can be chosen_AK2With di_D1/ dt calculates L₁, as shown in formula (8)：

Stage 2. initial part v is apparent from by Fig. 6 b_AK2And di_D1/ dt, substituting into formula (8) can obtain L₁=163nH.

Continuous current circuit equivalent capacity C₁Extracting method：From Fig. 6 b-stages 4., i is worked as_D1Reverse recovery current is reduced to 0 Afterwards, D₁Do not end immediately, but series resonant circuit of the cycle for T is constituted with IGCT.It is apparent from reference to Fig. 6 a, IGCT shut-offs are temporary I in the stable resonant oscillation part of state electric current decline stage, i.e. figure acceptance of the bid red period_AAnd i_D1Periodically significantly, by the period correspondence ripple Shape can obtain T=112.1ns, by itself and L₁、L_nIt is common to substitute into formula (5), C can be obtained₁=1.94nF.

4. step 4：Different electric pressures and cut-off current experiment are carried out for integrated gate commutated thyristor, by not With the process of experimental result, determine that integrated gate commutated thyristor drives the parameter value of breaking circuit and continuous current circuit：

Fig. 7 a, 7b, 7c are respectively electric pressure 700V and cut-off current 700A, electric pressure 1000V and cut-off current When 1000A, electric pressure 1500V and cut-off current 1500A, IGCT turns off IGCT terminal voltages v of transient state_AKWith anode current i_A、 Main circuit current i_T, fly-wheel diode electric current i_D1Experimental waveform figure, and v_AKWith i_D1Experimental waveform partial enlarged drawing.For figure 7a, Fig. 7 b, Fig. 7 c, equally can extract commutation time T using said method_C, gate-drive breaking circuit integrated inductor L_n, afterflow Loop equivalent inductance L₁And equivalent capacity C₁, parameter extraction result is as shown in table 1.

The difference V of table 1_AK、I_AWhen drive breaking circuit and continuous current circuit parameter

VAK/V_IA/A	TC/ns	Ln/nH	L1/nH	C1/nF	T/ns
						700_700	93	1.62	158	2.00	112.3
1000_1000	129	1.57	163	1.95	112.5
						1500_1500	200	1.55	162	2.02	114.3
2000_2000	229	1.41	163	1.94	112.1

Take each parameter algebraic mean value of table 1, you can determine that 5SHY 35L4520 types IGCT drive breaking circuit inductance L_nAnd D1331SH 45T type sustained diodes₁Continuous current circuit parameter：

Claims (10)

1. a kind of parameter extracting method for driving breaking circuit and continuous current circuit for integrated gate commutated thyristor, its feature exists In the extracting method is comprised the steps of：

Step 1：Analysis Drive Circuit of Integrated Gate Commutated Thyristor and continuous current circuit operation characteristic, propose integrated gate commutated crystalline substance Brake tube shutoff transient state afterflow process equivalent circuit；

Step 2：The equivalent circuit obtained according to step 1 derives the table of integrated gate current IGCT terminal voltage in different conditions Up to formula；

Step 3：The integrated gate commutated thyristor single tube test experiments of specific clamp voltage and cut-off current are carried out, by integrated Door pole stream-exchanging thyristor turns off transient process integrated gate commutated thyristor and each electric parameters experimental result of continuous current circuit, proposes collection The parameter extracting method of breaking circuit and continuous current circuit is driven into door pole stream-exchanging thyristor；

Step 4：Different electric pressures and cut-off current experiment are carried out for integrated gate commutated thyristor, by different experiments As a result process, determines that integrated gate commutated thyristor drives the parameter value of breaking circuit and continuous current circuit.

2. integrated gate commutated thyristor according to claim 1 drives the parameter extraction side of breaking circuit and continuous current circuit Method, it is characterised in that the integrated gate commutated thyristor shut-off transient state afterflow process equivalent circuit in described step 1 is included just To conducting phase equivalent circuit, electric current ascent stage equivalent circuit, shut-off and Reverse recovery stage equivalent circuit and resonant stage Equivalent circuit.

3. integrated gate commutated thyristor according to claim 1 drives the parameter extraction side of breaking circuit and continuous current circuit Method, it is characterised in that terminal voltage expression formula of the integrated gate commutated thyristor that described step 2 is derived in different conditions, Including terminal voltage expression formula v in forward conduction stage_AK1, electric current ascent stage terminal voltage expression formula v_AK2, shut-off and reversely extensive Terminal voltage v in multiple stage_AK3Expression formula：

$v_{AK1}=-V_{GU}+L_n\frac{{\mathrm{di}}_G}{dt}+V_T---\left(1\right)$

$v_{AK2}=-V_{GU}+L_n\frac{{\mathrm{di}}_{D1}}{dt}+V_T---\left(3\right)$

$v_{AK3}=-V_{GU}+L_n\frac{{\mathrm{di}}_{D1}}{dt}+v_{PNP}---\left(4\right)$

Wherein, V_GUTo turn off transient state driving power supply, L_nFor gate-drive breaking circuit integrated inductor, i_D1For fly-wheel diode electricity Stream, i_GFor gate current, V_TFor the built-in PNP transistor on-state voltage drop of integrated gate commutated thyristor, v_PNPFor integrated gate commutated The built-in PNP transistor resistance state pressure drop of IGCT.

4. integrated gate commutated thyristor according to claim 1 drives the parameter extraction side of breaking circuit and continuous current circuit Method, it is characterised in that specific clamp voltage V in described step 3_AKFor 2000V, cut-off current I_AFor 2000A.

5. integrated gate commutated thyristor according to claim 1 drives the parameter extraction side of breaking circuit and continuous current circuit Method, it is characterised in that the electric parameters experimental result in the step 3 includes integrated gate commutated thyristor terminal voltage v_AKWith anode Electric current i_A, fly-wheel diode electric current i_D1With main circuit current i_T。

6. integrated gate commutated thyristor according to claim 1 drives the parameter extraction side of breaking circuit and continuous current circuit Method, it is characterised in that the integrated gate commutated thyristor in the step 3 drives breaking circuit and the parameter of continuous current circuit to include Commutation time T_C, gate-drive breaking circuit integrated inductor L_n, continuous current circuit equivalent inductance L₁And equivalent capacity C₁。

7. integrated gate commutated thyristor according to claim 6 drives the parameter extraction side of breaking circuit and continuous current circuit Method, it is characterised in that described commutation time T_CTerminal voltage v when turning off transient state using integrated gate commutated thyristor_AKAnd afterflow Diode current i_D1Shut-off transient state experimental waveform direct measurement extract.

8. integrated gate commutated thyristor according to claim 6 drives the parameter extraction side of breaking circuit and continuous current circuit Method, it is characterised in that described gate-drive breaking circuit integrated inductor L_nTransient state is turned off using integrated gate commutated thyristor When terminal voltage v_AKAnd fly-wheel diode electric current i_D1Shut-off transient state experimental waveform, tried to achieve by formula (7)：

$L_n=\frac{|v_{AK1}-v_{AK2}|}{I_T}{T}_C---\left(7\right)$

Wherein, v_AK1For forward conduction stage integrated gate commutated thyristor terminal voltage, v_AK2For electric current ascent stage integral gate Commutated thyristor terminal voltage, I_TFor main circuit current, T_CFor commutation time.

9. integrated gate commutated thyristor according to claim 6 drives the parameter extraction side of breaking circuit and continuous current circuit Method, it is characterised in that described continuous current circuit equivalent inductance L₁Terminal voltage when turning off transient state using integrated gate commutated thyristor v_AKAnd fly-wheel diode electric current i_D1Shut-off transient state experimental waveform, tried to achieve by formula (8)：

$\left|v_{AK2}\right|=L_1\frac{{\mathrm{di}}_{D1}}{dt}---\left(8\right)$

Wherein, v_AK2For electric current ascent stage integrated gate commutated thyristor terminal voltage, i_D1For main circuit current.

10. integrated gate commutated thyristor according to claim 6 drives the parameter extraction of breaking circuit and continuous current circuit Method, it is characterised in that described continuous current circuit equivalent capacity C₁Using integrated gate commutated thyristor terminal voltage v_AKWith anode Electric current i_A, fly-wheel diode electric current i_D1, main circuit current i_TShut-off transient state experimental waveform, tried to achieve by formula (5)：

$T=2\mathrm{\&pi;}\sqrt{(L_n+L_1)C_1}---\left(5\right)$

Wherein, L_nFor gate-drive breaking circuit integrated inductor, L₁For continuous current circuit equivalent inductance, T is cycle of oscillation.