CN203896323U - Integrated ambipolar switch tube - Google Patents
Integrated ambipolar switch tube Download PDFInfo
- Publication number
- CN203896323U CN203896323U CN201420175860.4U CN201420175860U CN203896323U CN 203896323 U CN203896323 U CN 203896323U CN 201420175860 U CN201420175860 U CN 201420175860U CN 203896323 U CN203896323 U CN 203896323U
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- CN
- China
- Prior art keywords
- switch pipe
- resistance
- integrated
- transistor
- diode
- Prior art date
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Abstract
The utility model provides an integrated ambipolar switch tube comprising the following structures: an ambipolar transistor; a first resistor connected with a base electrode of the ambipolar transistor; a second resistor connected between the base electrode and an emitter electrode of the ambipolar transistor; and a freewheeling diode connected between the emitter electrode and a collector electrode of the ambipolar transistor. An ambipolar transistor core is added with the R1 and R2 so as to reduce a delay time and a storage time of the integrated ambipolar switch tube, thus reducing transition loss of the integrated ambipolar switch tube; the switch loss of the integrated ambipolar switch tube can be reduced without increasing a package heat radiation area, thereby effectively improving switch performance and reducing cost at the same time.
Description
Technical field
The utility model relates to a kind of semiconductor device, particularly relates to a kind of integrated bipolar switch pipe.
Background technology
Integrated bipolar switch pipe is a kind of current control device, and electronics and hole participate in conduction simultaneously.Integrated bipolar switch pipe volume is little, lightweight, little power consumption, the life-span is long, reliability is high, is widely used in using as switch in the switching circuits such as switching power circuit, Full-bridge oscillating, half-bridge vibration, single-ended reverse exciting.
NPN transistor is modal integrated bipolar switch pipe, its characteristic working curve as shown in Figure 1, when integrated bipolar switch pipe is worked in switching circuit, need to be through three different regions, respectively: cut-off region, transition region, saturation region.Cut-off region: emitter junction and collector junction are reverse bias, integrated bipolar switch pipe is in off state.Transition region: emitter junction positively biased, collector junction is reverse-biased, and integrated bipolar switch pipe can be equivalent to a variable D.C. resistance.Saturation region: emitter junction and collector junction are forward bias, integrated bipolar switch pipe is in closure state.By analysis find cut-off region and saturation region switching loss very micro-, and the switching loss of transition region is larger.The operating state of integrated bipolar switch pipe is switched to saturation region from cut-off region, and is switched to the process of cut-off region and can produces switching loss from saturation region.Switching loss has comprised turn-off power loss and turn-on consumption, and switch, in the time turn-offing and open, has the voltage and current of acute variation to produce, and therefore loss is very large.
Be illustrated in figure 2 typical NPN transistor switching circuit, described NPN transistor switching circuit comprises NPN transistor and peripheral resistance.Wherein, peripheral resistance R
land R
bbe respectively load resistance and base biasing resistor.As shown in Fig. 3 (a), when inputting positive pulse V to transistor
btime, transistor turns.If transistor is in saturation condition, output voltage V
ofor saturation voltage V
cES, as shown in Figure 3 (c), collector current is saturation current I
cs, as shown in Figure 3 (b).Now, the switch of the suitable connection of transistor.As shown in Fig. 3 (a), in the time that base stage no signal is inputted, transistor is in cut-off state, and collector electrode only has very little reverse leakage current to pass through, output voltage V
oclose to supply voltage+V
cC, as shown in Figure 3 (c).Now transistor is equivalent to a cut-off switch.As input pulse V
badd fashionable, collector current will through one section time of delay t
djust be increased to I
cs, in the time that input pulse is removed, collector current also through one section time of delay t
sjust decline gradually.As shown in Figure 3 (b), transistor switch time parameter is generally according to collector current i
cvariation define: time of delay t
d: join i from pulse signal
crise to 0.1I
cs.Rise time t
r: i
cfrom 0.1I
csrise to 0.9I
cs.Memory time t
s: be removed to i from pulse signal
cdrop to 0.9I
cs.Fall time t
f: i
cfrom 0.9I
csdrop to 0.1I
cs.Wherein t
d+ t
rbe opening time t
on, t
s+ t
fbe shut-in time t
off.
Because integrated bipolar switch pipe switching tube in the time opening need to pass through opening time t
oncould realize firing current, and integrated bipolar switch pipe need to pass through shut-in time t in the time closing
offcould realize close current, therefore opening and closing speed is slow, and integrated bipolar switch pipe power consumption is increased.General way is to increase integrated bipolar switch pipe die area or increase package cooling area to reduce the damage that integrated bipolar switch pipe causes because of power consumption, but this method need to increase die area and package cooling area, virtually having increased production cost, is not the preferred method that solves integrated bipolar switch pipe power problems.Therefore how not increase on the basis of production cost, the switching characteristic, reduction switching loss, the lifting output current that strengthen integrated bipolar switch pipe become those skilled in the art's problem demanding prompt solution.
Utility model content
The shortcoming of prior art in view of the above, the purpose of this utility model is to provide a kind of integrated bipolar switch pipe, increases problem for solving that the switching characteristic of the integrated bipolar switch pipe of prior art is poor, switching loss large and reducing the cost that switching loss brings.
For achieving the above object and other relevant objects, the utility model provides a kind of integrated bipolar switch pipe, and described integrated bipolar switch pipe at least comprises:
Bipolar transistor, the first resistance, the second resistance and diode;
One end of described the first resistance is as the first exit of described integrated bipolar switch pipe, and the other end is connected in the base stage of described bipolar transistor;
Described the second resistance is connected between the emitter and base stage of described bipolar transistor, and one end that described the second resistance is connected with the emitter of described bipolar transistor is as the second exit of described integrated bipolar switch pipe;
Described diode is connected between the collector electrode and emitter of described bipolar transistor, and one end that described diode is connected with the collector electrode of described bipolar transistor is as the three terminal of described integrated bipolar switch pipe.
Preferably, the first exit of described integrated bipolar switch pipe is base stage, and the second exit is emitter, and three terminal is collector electrode.
Preferably, the resistance of described the first resistance and described the second resistance is preset ratio setting, to repair the drive waveforms of described bipolar transistor.
More preferably, the proportion of described the second resistance and described the first resistance is set as 1～8.
Preferably, the resistance sum of described the first resistance and described the second resistance is set as 50 Ω～10K Ω.
Preferably, described bipolar transistor is NPN type.
Preferably, the anodic bonding of described diode is in the emitter of described bipolar transistor, and the negative electrode of described diode is connected in the collector electrode of described bipolar transistor.
Preferably, described diode is fly-wheel diode.
More preferably, described fly-wheel diode is fast recovery diode or Schottky diode.
As mentioned above, integrated bipolar switch pipe of the present utility model, has following beneficial effect:
Integrated bipolar switch pipe of the present utility model utilization reduces time of delay and the memory time of integrated bipolar switch pipe at the inner increase of integrated bipolar switch pipe tube core device R 1, R2, on the basis that does not increase package cooling area, reduce the switching loss of integrated bipolar switch pipe, effectively improve switch performance and reduce cost simultaneously.
Brief description of the drawings
Fig. 1 is shown as the characteristic working curve schematic diagram of bipolar transistor.
Fig. 2 is shown as NPN transistor switching circuit schematic diagram of the prior art.
Fig. 3 (a) is shown as the input voltage waveform schematic diagram of NPN transistor switching circuit of the prior art.
Fig. 3 (b) is shown as the collector current waveform schematic diagram of NPN transistor switching circuit of the prior art.
Fig. 3 (c) is shown as the output voltage waveforms schematic diagram of NPN transistor switching circuit of the prior art.
Fig. 4 is shown as integrated bipolar switch pipe schematic diagram of the present utility model.
Element numbers explanation
1 integrated bipolar switch pipe
Q bipolar transistor
R1 the first resistance
R2 the second resistance
D diode
B the first exit
E the second exit
C three terminal
Embodiment
By specific instantiation, execution mode of the present utility model is described below, those skilled in the art can understand other advantages of the present utility model and effect easily by the disclosed content of this specification.The utility model can also be implemented or be applied by other different embodiment, and the every details in this specification also can be based on different viewpoints and application, carries out various modifications or change not deviating under spirit of the present utility model.
Refer to Fig. 4.It should be noted that, the diagram providing in the present embodiment only illustrates basic conception of the present utility model in a schematic way, satisfy and only show with assembly relevant in the utility model in graphic but not component count, shape and size drafting while implementing according to reality, when its actual enforcement, kenel, quantity and the ratio of each assembly can be a kind of random change, and its assembly layout kenel also may be more complicated.
As shown in Figure 4, the utility model provides a kind of integrated bipolar switch pipe 1, and described integrated bipolar switch pipe 1 at least comprises:
Bipolar transistor Q, the first resistance R 1, the second resistance R 2 and diode D.
Described bipolar transistor Q is bipolar npn transistor npn npn, and described bipolar transistor Q uses as switch.In the time that the base stage of described bipolar transistor Q is coupled with enough large voltage, described bipolar transistor Q conducting, switch connection; In the time that the base stage of described bipolar transistor Q is coupled with enough little voltage, described bipolar transistor Q cut-off, switch connects disconnection.
One end of described the first resistance R 1 is as the first exit B of described integrated bipolar switch pipe 1, and described the first exit B is the base stage of described integrated bipolar switch pipe 1.The other end is connected in the base stage of described bipolar transistor Q.Described the first resistance R 1 is carried out dividing potential drop by external load to the voltage on described integrated bipolar switch pipe 1 base stage B, thereby the electric current that acts on described bipolar transistor Q base is carried out to current limliting, reduces the reverse recovery time that charge-storage effect causes.
One end of described the second resistance R 2 is connected in the base stage of described bipolar transistor Q, the other end is connected in the emitter of described bipolar transistor Q, one end that described the second resistance R 2 is connected with the emitter of described bipolar transistor Q is as the second exit E of described integrated bipolar switch pipe 1, and described the second exit E is the emitter of described integrated bipolar switch pipe 1.Described the second resistance R 2 is for negative base current provides low impedance path, to reach the effect that reduces reverse recovery time.
Described the first resistance R 1 is preset ratio setting with the resistance of described the second resistance R 2, to repair the drive waveforms of described bipolar transistor Q, provide larger base stage to fall over each other electric current and reverse current in the moment of switch connection and shutoff, to accelerate the conducting of described bipolar transistor Q and to close, promote the conversion of described integrated bipolar switch pipe 1 between saturated and cut-off, greatly reduce switching loss.
The resistance sum of described the first resistance R 1 and described the second resistance R 2 is set as 50 Ω～10K Ω, makes the resistance of described the first resistance R 1 and described the second resistance R 2 meet preset ratio by certain resistance proportioning.In the present embodiment, the scope of R2/R1 is set as 1～8, wherein R1=100 Ω, R2=470 Ω.
The negative electrode of described diode D is connected in the collector electrode of described bipolar transistor Q, the anodic bonding of described diode D is in the emitter of described bipolar transistor Q, one end that described diode D is connected with the collector electrode of described bipolar transistor Q is as the three terminal C of described integrated bipolar switch pipe 1, and described three terminal C is the collector electrode of described integrated bipolar switch pipe 1.Described diode D is fly-wheel diode, can be fast recovery diode or Schottky diode, and in the present embodiment, described diode D is fast recovery diode.Described diode D can effectively prevent that described bipolar transistor Q is damaged by reverse-conduction current.
Integrated bipolar switch pipe 1 of the present utility model increases the first resistance R 1 and the second resistance R 2, the drive waveforms of repairing described bipolar transistor Q by the ratio regulating between described the first resistance R 1 and described the second resistance R 2, the switching loss that reduces described integrated bipolar switch pipe 1 with this on the basis that does not increase package cooling area, effectively improves switch performance and reduces cost simultaneously.
In sum, the utility model provides a kind of integrated bipolar switch pipe, and described integrated bipolar switch pipe at least comprises: bipolar transistor, the first resistance, the second resistance and diode; One end of described the first resistance is as the first exit of described integrated bipolar switch pipe, and the other end is connected in the base stage of described bipolar transistor; Described the second resistance is connected between the emitter and base stage of described bipolar transistor, and one end that described the second resistance is connected with the emitter of described bipolar transistor is as the second exit of described integrated bipolar switch pipe; Described diode is connected between the collector electrode and emitter of described bipolar transistor, and one end that described diode is connected with the collector electrode of described bipolar transistor is as the three terminal of described integrated bipolar switch pipe.Integrated bipolar switch pipe of the present utility model utilization reduces time of delay and the memory time of integrated bipolar switch pipe at the inner increase of integrated bipolar switch pipe tube core device R 1, R2, reduce the loss of integrated bipolar switch tube transitions, on the basis that reduces package cooling area, greatly reduce the temperature rise of integrated bipolar switch pipe, effectively reduce the cost of integrated bipolar switch pipe simultaneously.So the utility model has effectively overcome various shortcoming of the prior art and tool high industrial utilization.
Above-described embodiment is illustrative principle of the present utility model and effect thereof only, but not for limiting the utility model.Any person skilled in the art scholar all can, under spirit of the present utility model and category, modify or change above-described embodiment.Therefore, have in technical field under such as and conventionally know that the knowledgeable modifies or changes not departing from all equivalences that complete under spirit that the utility model discloses and technological thought, must be contained by claim of the present utility model.
Claims (9)
1. an integrated bipolar switch pipe, is characterized in that, described integrated bipolar switch pipe at least comprises:
Bipolar transistor, the first resistance, the second resistance and diode;
One end of described the first resistance is as the first exit of described integrated bipolar switch pipe, and the other end is connected in the base stage of described bipolar transistor;
Described the second resistance is connected between the emitter and base stage of described bipolar transistor, and one end that described the second resistance is connected with the emitter of described bipolar transistor is as the second exit of described integrated bipolar switch pipe;
Described diode is connected between the collector electrode and emitter of described bipolar transistor, and one end that described diode is connected with the collector electrode of described bipolar transistor is as the three terminal of described integrated bipolar switch pipe.
2. integrated bipolar switch pipe according to claim 1, is characterized in that: the first exit of described integrated bipolar switch pipe is base stage, the second exit is emitter, and three terminal is collector electrode.
3. integrated bipolar switch pipe according to claim 1, is characterized in that: the resistance of described the first resistance and described the second resistance is preset ratio setting, to repair the drive waveforms of described bipolar transistor.
4. integrated bipolar switch pipe according to claim 3, is characterized in that: the proportion of described the second resistance and described the first resistance is set as 1～8.
5. integrated bipolar switch pipe according to claim 1, is characterized in that: the resistance sum of described the first resistance and described the second resistance is set as 50 Ω～10K Ω.
6. integrated bipolar switch pipe according to claim 1, is characterized in that: described bipolar transistor is NPN type.
7. integrated bipolar switch pipe according to claim 1, is characterized in that: the anodic bonding of described diode is in the emitter of described bipolar transistor, and the negative electrode of described diode is connected in the collector electrode of described bipolar transistor.
8. integrated bipolar switch pipe according to claim 1, is characterized in that: described diode is fly-wheel diode.
9. integrated bipolar switch pipe according to claim 8, is characterized in that: described fly-wheel diode is fast recovery diode or Schottky diode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420175860.4U CN203896323U (en) | 2014-04-11 | 2014-04-11 | Integrated ambipolar switch tube |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420175860.4U CN203896323U (en) | 2014-04-11 | 2014-04-11 | Integrated ambipolar switch tube |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203896323U true CN203896323U (en) | 2014-10-22 |
Family
ID=51722675
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420175860.4U Expired - Fee Related CN203896323U (en) | 2014-04-11 | 2014-04-11 | Integrated ambipolar switch tube |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203896323U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111404501A (en) * | 2020-03-26 | 2020-07-10 | 芯朴科技(上海)有限公司 | Bias circuit of thermal tracking compensation power amplifier |
-
2014
- 2014-04-11 CN CN201420175860.4U patent/CN203896323U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111404501A (en) * | 2020-03-26 | 2020-07-10 | 芯朴科技(上海)有限公司 | Bias circuit of thermal tracking compensation power amplifier |
| CN111404501B (en) * | 2020-03-26 | 2023-08-29 | 芯朴科技(上海)有限公司 | Bias circuit of thermal tracking compensation power amplifier |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20141022 Termination date: 20150411 |
|
| EXPY | Termination of patent right or utility model |