CN207070035U - The drain modulation circuit of GaN high electron mobility transistor - Google Patents
The drain modulation circuit of GaN high electron mobility transistor Download PDFInfo
- Publication number
- CN207070035U CN207070035U CN201720674856.6U CN201720674856U CN207070035U CN 207070035 U CN207070035 U CN 207070035U CN 201720674856 U CN201720674856 U CN 201720674856U CN 207070035 U CN207070035 U CN 207070035U
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- circuit
- nmos
- amplifier
- modulation circuit
- ganhemt
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Abstract
A kind of this disclosure relates to drain modulation circuit of GaN high electron mobility transistor.The drain modulation circuit of disclosure GaN high electron mobility transistor, including：Pulse driving circuit, on-off circuit and overshoot protection circuit；The pulse driving circuit is used to produce the opposite pulse signal of two-way level；The on-off circuit is used to control turning on and off for N-type metal-oxide semiconductor (MOS) NMOS；The overshoot protection circuit is used for the output voltage for controlling the drain modulation circuit of the GaN high electron mobility transistor GaN HEMT.The disclosure is using NMOS as the switching device between power supply and GaN HEMT drain electrode; its size is smaller, price is relatively cheap; reduce the holistic cost and area of circuit; and solve in huge overshoot caused by source current acute variation; the nmos switch device in GaN HEMT drain modulation circuit is protected, improves the reliability of circuit.
Description
Technical field
This disclosure relates to circuit engineering, in particular it relates to a kind of drain modulation of GaN high electron mobility transistor
Circuit.
Background technology
Usual GaN high electron mobility transistor (GaN High Electron Mobility Transistor, letter
Claim：GaN HEMT) grid voltage need for negative voltage, when grid voltage is 0V, GaN HEMT are in heavily conducting state, such as
Fruit GaN HEMT drain voltage still in working condition, then can produce high current so that GaN HEMT are burned out.Therefore GaN is worked as
When HEMT grid voltage does not load correctly, must ensure GaN HEMT drain electrode will not go up electricity.Based on this, in order to protect
GaN HEMT, can be with when grid voltage does not load correctly, it is necessary to set switch between GaN HEMT drain electrode and power supply
By turning off switch protection GaN HEMT.What is more, in pulse application, except being also required in inter-train pause by power remove,
Also need to that GaN HEMT drain voltage is down into 0V within nanosecond other time.
In correlation technique, conventional switch is P-type mos (P Metal Oxide
Semiconductor, referred to as：PMOS) switching device.But PMOS switch device is because its carrier mobility is relatively low, in order to
Realize corresponding ducting capacity, PMOS switch device can take larger printed circuit board (Printed Circuit Board,
Referred to as：PCB) area, and cost is higher, the drain parasitic capacitance of PMOS switch device is larger in addition, causes drain voltage can not
Rapid shut-off, common name have the hangover of Microsecond grade, and serious meeting causes GaN HEMT to be burned out.
Utility model content
The purpose of the disclosure is to provide a kind of drain modulation circuit of GaN high electron mobility transistor.
To achieve these goals, the disclosure provides a kind of GaN HEMT drain modulation circuit, including：Pulsed drive electricity
Road, on-off circuit and overshoot protection circuit；
The pulse driving circuit is used to produce the opposite pulse signal of two-way level；
The on-off circuit is used to control turning on and off for N-type metal-oxide semiconductor (MOS) NMOS；
The overshoot protection circuit is used for the output voltage for controlling the drain modulation circuit of the GaN HEMT.
Optionally, the on-off circuit includes：First input port, the second input port, the first amplifier, the second amplification
Device, the first NMOS and the 2nd NMOS；
Wherein, the first input port is connected with a pin of first amplifier, first amplifier
Another pin is connected with the grid of the first NMOS；One pin of second input port and second amplifier
Connection, another pin of second amplifier are connected with the grid of the 2nd NMOS；
First NMOS and the 2nd NMOS series connection, the drain electrode of the first NMOS connect the first power supply, and described the
Two NMOS source ground；The drain modulation electricity of the GaN HEMT is connected between first NMOS and the 2nd NMOS
The output port on road；The output port of the drain modulation circuit of the GaN HEMT is connected with the drain electrode of the GaN HEMT.
Optionally, in addition to：Booster circuit；
One end of the booster circuit is connected with second source, the other end of the booster circuit and first amplifier
The 3rd pin connection.
Optionally, the pulse driving circuit includes：Negative voltage generating circuit, pulse control signal generation circuit, with door and
NOT gate；
One end of the negative voltage generating circuit and the pulse control signal generation circuit are connected to described and door；It is described
It is connected with an output end of door with the first input port；The input with another output end of door and the NOT gate
End connection, the output end of the NOT gate are connected with second input port；The other end of the negative voltage generating circuit with it is described
GaN HEMT grid connection.
Optionally, the overshoot protection circuit includes：First diode and the second diode；
First diode is in parallel with the first NMOS, and second diode is in parallel with the 2nd NMOS.
Optionally, the 3rd pin of second amplifier is connected with the second source, second amplifier
4th pin ground connection.
Optionally, the output end of the 4th pin of first amplifier and the drain modulation circuit of the GaN HEMT
Mouth connection.
Pass through above-mentioned technical proposal, using NMOS as the switching device between power supply and GaN HEMT drain electrode, its chi
It is very little it is smaller, price is relatively cheap, reduce the holistic cost and area of circuit, and solve in source current acute variation
Caused huge overshoot, the nmos switch device in GaN HEMT drain modulation circuit is protected, improves the reliable of circuit
Property.
Other feature and advantage of the disclosure will be described in detail in subsequent specific embodiment part.
Brief description of the drawings
Accompanying drawing is for providing further understanding of the disclosure, and a part for constitution instruction, with following tool
Body embodiment is used to explain the disclosure together, but does not form the limitation to the disclosure.In the accompanying drawings：
Fig. 1 is the drain modulation circuit block diagram of GaN HEMT according to an exemplary embodiment a kind of.
Fig. 2 is the drain modulation circuit block diagram of GaN HEMT according to an exemplary embodiment a kind of.
Embodiment
The embodiment of the disclosure is described in detail below in conjunction with accompanying drawing.It should be appreciated that this place is retouched
The embodiment stated is merely to illustrate and explained the disclosure, is not limited to the disclosure.
Fig. 1 is the drain modulation circuit block diagram of GaN HEMT according to an exemplary embodiment a kind of.Reference picture 1,
The drain modulation circuit of the GaN HEMT includes pulse driving circuit, on-off circuit and overshoot protection circuit；Pulse driving circuit
The pulse signal opposite for producing two-way level；On-off circuit is used to control N-type metal-oxide semiconductor (MOS) (N Metal
Oxide Semiconductor, referred to as：Turning on and off NMOS)；Overshoot protection circuit is used for the drain electrode for controlling GaN HEMT
The output voltage of modulation circuit.
Wherein, on-off circuit includes：First input port, the second input port, the first amplifier, the second amplifier,
One NMOS (NMOS1), the 2nd NMOS (NMOS2)；First input port is connected with a pin of the first amplifier, the first amplification
Another pin of device and NMOS1 grid G connect；Second input port is connected with a pin of the second amplifier, and second
Another pin of amplifier and NMOS2 grid G connect；NMOS1 and NMOS2 series connection, the NMOS1 electricity of drain D connection first
Source VDD1, NMOS2 source S ground connection；The output end of GaN HEMT drain modulation circuit is connected between NMOS1 and NMOS2
Mouth Vout；The output port Vout of GaN HEMT drain modulation circuit is connected with GaN HEMT drain electrode.Booster circuit
Vboost one end is connected with second source VDD2, and the other end of booster circuit is connected with the 3rd pin of the first amplifier.
Overshoot protection circuit includes：First diode Diode1 and the second diode Diode2；First diode Diode1 and NMOS1 is simultaneously
Connection, the second diode Diode2 are in parallel with NMOS2.
Fig. 2 is the drain modulation circuit block diagram of GaN HEMT according to an exemplary embodiment a kind of.Reference picture 2,
Pulse driving circuit includes：Negative voltage generating circuit, pulse control signal generation circuit and door and NOT gate；Negative voltage generating circuit
One end and pulse control signal generation circuit is connected to and door；Connect with an output end of door with first input port (PWM1)
Connect；It is connected with the input of another output end NAND gate of door, the output end of NOT gate is connected with the second input port (PWM2)；
The other end of negative voltage generating circuit is connected with GaN HEMT grid.
In the disclosure, first input port input signal for pulse width modulation (Pulse Width Modulation,
Referred to as：PWM1), the signal of the second input port input is PWM2, and PWM1 controls NMOS1 by the first amplifier, when PWM1 is
High level, NMOS1 drain D and source S are open-minded；PWM2 controls NMOS2 by the second amplifier, when PMW2 is high level,
NMOS2 miss D and source S is open-minded.To avoid power supply and ground short circuit, PWM1 and PWM2 can not be high level simultaneously.First electricity
Source VDD1 is 28~50V power supply, is powered for GaN HEMT, and second source VDD2 is 5~10V power supply, is supplied for on-off circuit
Electricity.The output port Vout of GaN HEMT drain modulation circuit is that the power supply after impulse modulation is exported to GaN HEMT leakage
Pole.The lifting of the supply voltage of first amplifier arrive VA+10V or so by booster circuit Vboost, and VA is the voltage of A points in figure, VA
It can change between 0~VDD2.
In the present embodiment, in order to reduce the loss of power supply, NMOS1 and NMOS2 resistance is set to be less than 100m Ω, GaN
Electric capacity (including NMOS1 and NMOS2 electric capacity, GaN HEMT electricity on the output port Vout of HEMT drain modulation circuit
Appearance and some filter capacitors and radio-frequency-short capacitance) it is no more than 10nF, the charge and discharge of such GaN HEMT drain modulation circuit
The time of electricity can be nanosecond order, even if considering ringing caused by current over pulse, input first input port and the
The rise and fall delay of the pulse signal of two input ports can be determined to be less than 50ns, can met most of high-power
Pulsed microwave power circuit application.
When the rise and fall delay of input first input port and the pulse signal of the second input port is reduced to nanosecond amount
During level, during being switched on and off of NMOS1 and NMOS2, curent change is very big, and its rate of change is 1GA/S magnitude, because
This is in GaN HEMT drain modulation circuit, even if very small stray inductance will also result in huge overshoot voltage, the mistake
The calculation formula for rushing voltage is：DV=di/dt × L, wherein L are stray inductance, and di/dt is current changing rate.Even if 50nH's
Stray inductance can also cause more than 50V overshoot voltage, and the overshoot voltage is superimposed upon on 28~50V voltage, it will usually is exceeded
The breakdown voltage of nmos switch device and GaN HEMT, causes circuit to damage.Device failure caused by order to prevent overshoot voltage,
First diode Diode1 and the second diode Diode2 can play a protective role, when the voltage of A points is more than VDD2+Von
When (Von is diode forward conducting voltage), the first diode Diode1 conductings, positive voltage overshoot is eliminated；When the voltage of A points is low
When VDD2-Von, the second diode Diode2 conductings, negative voltage overshoot is eliminated.Pass through the first diode Diode1 and the two or two
Pole pipe Diode2 protection, generally overshoot can control within less voltage (can be less than 5V) that (this is mainly due to two
Caused by pole pipe stray inductance in itself and resistance).
The disclosure, using NMOS as the switching device between power supply and GaN HEMT drain electrode, its size is smaller, price
It is relatively cheap, the holistic cost and area of circuit are reduced, and solve huge caused by source current acute variation
Overshoot, protects the nmos switch device in GaN HEMT drain modulation circuit, improves the reliability of circuit.
The preferred embodiment of the disclosure is described in detail above in association with accompanying drawing, still, the disclosure is not limited to above-mentioned reality
The detail in mode is applied, in the range of the technology design of the disclosure, a variety of letters can be carried out to the technical scheme of the disclosure
Monotropic type, these simple variants belong to the protection domain of the disclosure.
It is further to note that each particular technique feature described in above-mentioned embodiment, in not lance
In the case of shield, it can be combined by any suitable means.In order to avoid unnecessary repetition, the disclosure to it is various can
The combination of energy no longer separately illustrates.
In addition, it can also be combined between a variety of embodiments of the disclosure, as long as it is without prejudice to originally
Disclosed thought, it should equally be considered as disclosure disclosure of that.
Claims (7)
- A kind of 1. GaN high electron mobility transistor GaNHEMT drain modulation circuit, it is characterised in that including：Pulse Drive circuit, on-off circuit and overshoot protection circuit；The pulse driving circuit is used to produce the opposite pulse signal of two-way level；The on-off circuit is used to control turning on and off for N-type metal-oxide semiconductor (MOS) NMOS；The overshoot protection circuit is used for the output voltage for controlling the drain modulation circuit of the GaNHEMT.
- 2. GaNHEMT according to claim 1 drain modulation circuit, it is characterised in that the on-off circuit includes：The One input port, the second input port, the first amplifier, the second amplifier, the first NMOS and the 2nd NMOS；Wherein, the first input port is connected with a pin of first amplifier, first amplifier it is another Individual pin is connected with the grid of the first NMOS；One pin of second input port and second amplifier connects Connect, another pin of second amplifier is connected with the grid of the 2nd NMOS；First NMOS and the 2nd NMOS series connection, drain electrode the first power supply of connection of the first NMOS, described second NMOS source ground；The drain modulation circuit of the GaNHEMT is connected between first NMOS and the 2nd NMOS Output port；The output port of the drain modulation circuit of the GaNHEMT is connected with the drain electrode of the GaNHEMT.
- 3. GaNHEMT according to claim 2 drain modulation circuit, it is characterised in that also include：Booster circuit；One end of the booster circuit is connected with second source, and the of the other end of the booster circuit and first amplifier Three pin connections.
- 4. GaNHEMT according to claim 2 drain modulation circuit, it is characterised in that the pulse driving circuit bag Include：Negative voltage generating circuit, pulse control signal generation circuit and door and NOT gate；One end of the negative voltage generating circuit and the pulse control signal generation circuit are connected to described and door；Described and door An output end be connected with the first input port；It is described to connect with another output end of door and the input of the NOT gate Connect, the output end of the NOT gate is connected with second input port；The other end of the negative voltage generating circuit with it is described GaNHEMT grid connection.
- 5. GaNHEMT according to claim 2 drain modulation circuit, it is characterised in that the overshoot protection circuit bag Include：First diode and the second diode；First diode is in parallel with the first NMOS, and second diode is in parallel with the 2nd NMOS.
- 6. GaNHEMT according to claim 3 drain modulation circuit, it is characterised in that the of second amplifier Three pins are connected with the second source, the 4th pin ground connection of second amplifier.
- 7. GaNHEMT according to claim 2 drain modulation circuit, it is characterised in that the of first amplifier Four pins are connected with the output port of the drain modulation circuit of the GaNHEMT.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720674856.6U CN207070035U (en) | 2017-06-09 | 2017-06-09 | The drain modulation circuit of GaN high electron mobility transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720674856.6U CN207070035U (en) | 2017-06-09 | 2017-06-09 | The drain modulation circuit of GaN high electron mobility transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207070035U true CN207070035U (en) | 2018-03-02 |
Family
ID=61509708
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720674856.6U Withdrawn - After Issue CN207070035U (en) | 2017-06-09 | 2017-06-09 | The drain modulation circuit of GaN high electron mobility transistor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207070035U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111130468A (en) * | 2019-12-27 | 2020-05-08 | 上海大际电子科技有限公司 | Power amplifier protection and control circuit |
| CN111146770A (en) * | 2019-12-31 | 2020-05-12 | 三维通信股份有限公司 | Protection circuit of GaN power device |
| CN111431510A (en) * | 2020-05-08 | 2020-07-17 | 恒为科技（上海）股份有限公司 | Pulse signal generating circuit and electronic equipment |
-
2017
- 2017-06-09 CN CN201720674856.6U patent/CN207070035U/en not_active Withdrawn - After Issue
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111130468A (en) * | 2019-12-27 | 2020-05-08 | 上海大际电子科技有限公司 | Power amplifier protection and control circuit |
| CN111146770A (en) * | 2019-12-31 | 2020-05-12 | 三维通信股份有限公司 | Protection circuit of GaN power device |
| WO2021136221A1 (en) * | 2019-12-31 | 2021-07-08 | 三维通信股份有限公司 | Protective circuit for gan power device |
| CN111431510A (en) * | 2020-05-08 | 2020-07-17 | 恒为科技（上海）股份有限公司 | Pulse signal generating circuit and electronic equipment |
| CN111431510B (en) * | 2020-05-08 | 2023-04-21 | 恒为科技（上海）股份有限公司 | Pulse signal generating circuit and electronic equipment |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20180302 Effective date of abandoning: 20200108 |