CN202696455U - Field effect transistor drive circuit - Google Patents
Field effect transistor drive circuit Download PDFInfo
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- CN202696455U CN202696455U CN 201220385365 CN201220385365U CN202696455U CN 202696455 U CN202696455 U CN 202696455U CN 201220385365 CN201220385365 CN 201220385365 CN 201220385365 U CN201220385365 U CN 201220385365U CN 202696455 U CN202696455 U CN 202696455U
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Abstract
The utility model provides a high-efficiency field effect transistor drive circuit which is used for driving a switch power supply field effect transistor. The field effect transistor drive circuit comprises a working power supply, a drive signal generating circuit, a time delay drive circuit, and a time delay circuit. The drive signal generating circuit, the time delay drive circuit and the time delay circuit are sequentially connected and are further connected to the switch power supply field effect transistor. The drive circuit comprises a low speed disconnecting circuit and a high speed disconnecting circuit. The time delay drive circuit comprises a first inverter, a second inverter and a voltage comparator. The first inverter provides drive signals for the low speed disconnecting circuit. The second inverter provides drive circuit signals for the high speed disconnecting circuit. The voltage comparator is positioned in front of the second inverter. When the drive signals of an inverted input terminal of the voltage comparator increases to high than a reference voltage, the high speed disconnecting circuit is turned off, with the low speed disconnecting circuit left; and till the first inverter and the second inverter are conducted, the low speed disconnecting circuit is turned off.
Description
Technical field
The utility model relates to a kind of switch power technology, and particularly relevant for a kind of high efficiency field effect transistor drive circuit, it is applied to Switching Power Supply.
Background technology
In a lot of circuit, particularly in the Switching Power Supply, field effect transistor often is used as the element of switch, is used for the high-tension power transfer part of certain some, particularly large electric current of conducting and blocking circuit.Because be high power circuit, usually to bear large electric current during the field effect transistor conducting, usually to bear high voltage during blocking-up.In the process that field effect transistor is blocked and opened, produce power loss.
Oscillogram when Fig. 1 is the field effect transistor shutoff.200 is the electric current of field effect transistor drain-to-source.204 is the voltage of drain-to-source.202 is gate drive voltage.Field effect transistor with N-type describes as example, and field effect transistor turn-offs to reduce power loss with the speed of maximum before t2.And the voltage of the gate pole of field effect transistor (gate) has individual platform (t1 is to t2), and the voltage between this platform field effect transistor in period drain electrode and source electrode almost has been raised to the equal voltage of input direct voltage.If continue to keep high-speed the shutoff, will cause strong overshoot.Dash area among Fig. 1 is the loss when turn-offing each time, and more high power loss is larger for visible frequency.
In addition, the switching device in the switching circuit for example is field effect transistor, and the minimum resistance during conducting is very large on the power loss impact.Conducting resistance is higher, and power loss is just higher.And usually from the conducting resistance of the low field effect transistor of drain-to-source rated voltage less than the high field effect transistor of rated voltage.Therefore in order to reduce power loss, usually select alap rated voltage field effect transistor.The electromagnetic interference that produces in the FET switch circuit should be reduced to minimum.Electromagnetic interference in the switching circuit is to be caused by switching process.And the interference of the higher generation of voltage is larger.
In switching circuit, because the speed of switch is higher, such as the speed switch with 100 or 200 nanosecond, this speed usually causes overshoot and the spine of voltage on drain electrode and source electrode.This is because connect the path of source electrode or drain electrode certain length always to be arranged, and this length just has certain inductance.The feature of inductance is exactly that wherein electric current can not suddenly change.So when field effect transistor is turn-offed rapidly, the electric current in the inductance to the capacitor charging on the field effect transistor drain-to-source after, form the order Oscillating circuit with electric capacity, so that the voltage overshoot of field effect transistor drain-to-source and produce vibration.If do not adopt any measure damping overshoot voltage and vibration, so for fear of the damage of field effect transistor, must use the field effect transistor of high voltage-rated.Therefore power loss increases greatly.And the voltage of high frequency oscillation has produced electromagnetic interference, may destroy the normal operation of other electronic equipments.As shown in Figure 2, be the voltage waveform simulation result without any the field effect transistor drain-to-source of damping measure.In Fig. 2, demonstration be without any damping voltage overshoot and waveform.Actual direct voltage only has about 75 volts, but the voltage overshoot of field effect transistor when turn-offing be to 280 volts, and strong vibration.Fig. 3 shows the power loss the when field effect transistor that does not have damping is turn-offed.Therefore, reduce voltage overshoot, lower vibration, become the major issue that the field effect transistor drive circuit need to solve.
In the prior art, several typical ways are arranged.The first is to prolong the turn-off time.Fig. 4 is the field effect transistor drain-to-source voltage simulation waveform that low rate is turn-offed.Fig. 5 is the switch power loss simulation result that low rate is turn-offed.When the turn-off time overtime, the electric current in the inductance has time enough to subtract to get off.But this method has increased the power loss when turn-offing greatly, and therefore field effect transistor also wants cube to increase to reduce the temperature rise that is caused by power consumption.
Another kind method is that drain electrode and the source electrode of being on the scene effect pipe adds damper.Typical damper is by diode, and resistance and electric capacity form, as shown in Figure 6.Fig. 6 is typical FET switch circuit in the prior art.110 is the field effect transistor drive circuit among the figure.102 is field effect transistor.Diode 104, resistance 106, and electric capacity 108 has formed damper and reduces the field effect transistor source electrode to the voltage spine of drain electrode.Line inductance 100 is the reasons that cause the voltage spine.When field effect transistor 102 is turn-offed, begin electric capacity 108 chargings.Because the voltage on the electric capacity 108 can not suddenly change, so the voltage overshoot when turn-offing is absorbed by electric capacity 108, the highest overshoot voltage reduces greatly.Fig. 7 is the voltage simulation result that utilizes the field effect transistor drain-to-source of damper.Fig. 8 is the power loss simulation result that utilizes damper.When field effect transistor 102 conducting, the voltage on the electric capacity 108 discharges by resistance 106, with energy consumption on resistance 106.Use the method for damper to need more outer member, and because of its power loss along with voltage swing and other factors vary, the power consumption of its element is difficult to calculate accurately, causes component size to be difficult to select.
The third method is at the shutoff initial stage, turn-offs with fast speed.Then after a delay circuit produces certain delay, switching speed is fallen slowly, so overshoot voltage can in time be absorbed by field effect transistor.This method can reduce power loss greatly, and the while plays again the function that reduces overshoot voltage but do not increase element.But because field effect transistor has thousands of kinds, the turn-off speed of each etc. are all different, if therefore do not increase the delay adjustable function, are difficult to accomplish to optimize switch opportunity, thereby optimize the damping function of overshoot voltage.
The utility model content
For the problems referred to above, the purpose of this utility model provides a kind of field effect transistor drive circuit, and it has delay adjustable function, efficient stable.
The utility model proposes a kind of field effect transistor drive circuit, the field effect transistor that is used for Switching Power Supply drives.This field effect transistor drive circuit comprises working power, drives signal generating circuit, delay driving circuit, delay circuit, wherein, working power is connected with driving signal generating circuit, delay driving circuit and delay circuit, drives the field effect transistor that signal generating circuit, delay driving circuit and delay circuit connect and further be connected to Switching Power Supply successively.Described drive circuit comprises at a slow speed breaking circuit and quick breaking circuit, delay driving circuit comprises the first inverter, the second inverter and voltage comparator, the first inverter offers at a slow speed breaking circuit driving signal, and the second inverter provides the drive circuit signal to quick breaking circuit.Voltage comparator is positioned at before the second inverter, when the driving signal of voltage comparator inverting input rises to when being higher than a reference voltage, turn-offs quick breaking circuit, only remaining at a slow speed breaking circuit; Until at a slow speed breaking circuit is turn-offed in the first inverter and the second inverter conducting.
In an embodiment of the present utility model, described driving signal generating circuit comprises the first resistance, drive signal generator, the second resistance and the first switch element, the second resistance is connected in the drive signal generator two ends, and the positive input terminal of the first switch element is connected in the drive signal generator positive pole, the negative pole common ground of the negative input end of the first switch element and drive signal generator; Simultaneously, the positive input terminal of the first switch element is connected to the positive pole of drive circuit power supply by the first resistance, and drive signal generator sends the break-make that drives signal controlling the first switch element.
In an embodiment of the present utility model, described delay driving circuit further comprises reference voltage source, second switch element, comparator power supply and some resistance, the first inverter and the second inverter are used for the driving signal inversion with drive signal generator, and wherein reference voltage source provides described reference voltage to voltage comparator.
In an embodiment of the present utility model, described the first inverter and the second inverter are P type field effect transistor.
In an embodiment of the present utility model, the gate pole of described the first inverter is connected to the positive input terminal of the first switch element, the source ground of the first inverter, and the drain electrode of the first inverter is connected to the drive circuit power supply by the 3rd resistance; The gate pole of the second inverter is connected to the positive input terminal of the first switch element, the source ground of the second inverter, and the drain electrode of the second inverter is connected to the drive circuit power supply by the tenth resistance; Voltage comparator is connected between the gate pole and working power of the second inverter, and the positive pole of reference voltage source connects the inverting input of voltage comparator, minus earth; The output of voltage comparator is connected to the positive input terminal of second switch element, the negative input end ground connection of second switch element.
In an embodiment of the present utility model, described drive circuit is a totem drive circuit, it comprises N-type field effect transistor, at a slow speed breaking circuit, fast breaking circuit and some resistance, the gate pole of N-type field effect transistor is connected to the drain electrode of the first inverter, the source electrode of N-type field effect transistor is connected to the drive circuit power supply, the drain electrode of N-type field effect transistor is connected to the drain electrode of quick breaking circuit by the 13 resistance, the drain electrode of N-type field effect transistor also is connected to the at a slow speed drain electrode of breaking circuit by the first resistance, fast breaking circuit and the at a slow speed source grounding of breaking circuit; The gate pole of breaking circuit is connected to the drain electrode of the first inverter at a slow speed, and the gate pole of breaking circuit is connected to the drain electrode of the second inverter and the positive input terminal of second switch element fast.
In an embodiment of the present utility model, described at a slow speed breaking circuit and quick breaking circuit are realized by a P type field effect transistor.
In an embodiment of the present utility model, described Switching Power Supply comprises Switching Power Supply field effect transistor and transformer circuit, the drain electrode of N-type field effect transistor is connected to the gate pole of Switching Power Supply field effect transistor, the source electrode of Switching Power Supply field effect transistor is via the 4th grounding through resistance, and the drain electrode of Switching Power Supply field effect transistor is connected to transformer circuit.
In an embodiment of the present utility model, described field effect transistor drive circuit further comprises an antihunt circuit, and antihunt circuit is connected with the field effect transistor of Switching Power Supply.
In an embodiment of the present utility model, described damper circuit comprises diode, the 9th resistance and inductance, after diode and the 9th resistance parallel connection, diode anode one end is connected to the drain electrode of Switching Power Supply field effect transistor, diode cathode one end is connected to electric capacity, another extremely further ground connection of electric capacity.
Field effect transistor drive circuit described in the utility model, it has the delay adjustable function, and efficient is high, and power consumption is little.When gate voltage began to descend from platform, the trigger voltage comparator changed output state.The variation of this state then changes the turn-off speed of field effect transistor, reaches the purpose that reduces overshoot voltage.This high-speed comparator also can be realized with diverse ways.It for example is a digital delay circuit.When gate voltage drops to a certain degree, trigger the turn-off speed that this delay circuit reduces field effect transistor.
Above-mentioned explanation only is the general introduction of technical solutions of the utility model, for can clearer understanding technological means of the present utility model, and can be implemented according to the content of specification, and for above-mentioned and other objects, features and advantages of the present utility model can be become apparent, below especially exemplified by embodiment, and the cooperation accompanying drawing, be described in detail as follows.
Description of drawings
Oscillogram when Fig. 1 is the field effect transistor turn off process.
Fig. 2 is without any the voltage waveform simulation result of the field effect transistor drain-to-source of damping measure in the prior art.
Fig. 3 is without the fet switch power consumption waveform of any damping in the prior art.
Fig. 4 is the field effect transistor drain-to-source voltage simulation waveform that low rate is turn-offed in the prior art.
Fig. 5 is the switch power loss simulation result that low rate is turn-offed in the prior art.
Fig. 6 is the circuit diagram of typical FET switch circuit in the prior art.
Fig. 7 is the voltage simulation result that utilizes the field effect transistor drain-to-source of damper in the prior art.
Fig. 8 is the power loss simulation result that utilizes damper in the prior art.
Fig. 9 is the block diagram of the field effect transistor drive circuit of the utility model preferred embodiment.
Figure 10 is the circuit diagram of the field effect transistor drive circuit of the utility model preferred embodiment.
Figure 11 is the voltage simulation waveform of drain-to-source of the field effect transistor of the utility model preferred embodiment.
Figure 12 is the field effect transistor power loss simulation waveform that utilizes the field effect transistor drive circuit of the utility model preferred embodiment.
Embodiment
The utility model is a field effect transistor drive circuit, can optimize switch opportunity, thereby optimizes the function of overshoot voltage.Please in conjunction with reference Fig. 9-10, Fig. 9 is the field effect transistor drive circuit block diagram of the utility model preferred embodiment, and Figure 10 is the circuit diagram of the field effect transistor drive circuit of the utility model preferred embodiment.In the present embodiment, describe as an example of reverse excitation circuit example.The field effect transistor that field effect transistor drive circuit 91 is used for Switching Power Supply 92 drives.Switching Power Supply 92 comprises switch 921 and the transformer circuit 922 that is connected, and switch 921 is used for providing ac signal to transformer circuit 922.Switch 921 is generally field effect transistor, and the element that represents take label M4 among Figure 10 is as main Switching Power Supply field effect transistor.Field effect transistor drive circuit 91 comprises working power 911, drives signal generating circuit 912, delay driving circuit 913, delay circuit 914 and antihunt circuit 915, wherein, working power 911 is connected with driving signal generating circuit 912, delay driving circuit 913 and delay circuit 914, for this drive circuit provides working power.Driving signal generating circuit 912, delay driving circuit 913 and delay circuit 914 connects successively and also further is connected to switch 921.Antihunt circuit 915 directly is connected with switch 921.
In conjunction with shown in Figure 10, the drive circuit power supply that working power 911 represents for label V2 in the present embodiment.Drive the drive signal generator that signal generating circuit 912 comprises the first resistance R 1, label V1 representative, the second resistance R 2, the first switch element S1, the second resistance R 2 is connected in drive signal generator V1 two ends, and it is anodal that the positive input terminal of the first switch element S1 is connected in drive signal generator V1, the negative pole common ground of negative input end and drive signal generator V1.Simultaneously, the positive input terminal of the first switch element S1 is connected to the positive pole of drive circuit power supply V2 by the first resistance R 1, to obtain working power.Drive signal generator V1 sends the break-make that drives signal controlling the first switch element S1.
Delay driving circuit 913 comprises the first inverter M1, the second inverter M6, voltage comparator U1, reference voltage source V5, second switch element S2, comparator power supply V4 and some resistance R 3, R10, R11, R12, the first inverter M1 and the second inverter M6 are identical driving prime inverter, and the first inverter M1, the second inverter M6 are used for the driving signal inversion with drive signal generator V1.In the present embodiment, the first inverter M1, the second inverter M6 are P type field effect transistor.The gate pole of the first inverter M1 is connected to the positive input terminal of the first switch element S1, source ground, and drain electrode is connected to drive circuit power supply V2 by resistance R 3.The gate pole of the second inverter M6 is connected to the positive input terminal of the first switch element S1, source ground, and drain electrode is connected to drive circuit power supply V2 by resistance R 10.The gate pole of the second inverter M6 also is connected to the in-phase input end of voltage comparator U1 by resistance R 11, that is, voltage comparator U1 is connected between the second inverter M6 and the working power V2.The positive pole of reference voltage source V5 connects the inverting input of voltage comparator U1, minus earth.The output of voltage comparator U1 is connected to the positive input terminal of second switch element S2, the negative input end ground connection of second switch element S2.Simultaneously, comparator power supply V4 is connected to voltage comparator U1, and U1 provides working power for voltage comparator.
The first inverter M1 offers the at a slow speed breaking circuit M5 driving signal that totem drives specially, and the second inverter M6 provides the drive circuit signal to quick breaking circuit M2.
The switch 91 of Switching Power Supply 92 realized by a field effect transistor M4, and the drain electrode of N-type field effect transistor M3 is connected to the gate pole of Switching Power Supply field effect transistor M4.The source electrode of Switching Power Supply field effect transistor M4 is via a resistance R 4 ground connection, and the drain electrode of Switching Power Supply field effect transistor M4 is connected to transformer circuit 92.
Above-mentioned circuit working principle is as follows:
In the Switching Power Supply field effect transistor M4 turn on process, and before turn-offing, drive signal generator V1 produces and drives signal, makes the first switch element S1 conducting, the first inverter M1 and the second inverter M6 gate pole are positioned at low level, and the first inverter M1, the second inverter M6 are in off-state.Field effect transistor M3, M2, M5 are in conducting state.If when needing Switching Power Supply field effect transistor M4 to enter turn off process, drive signal generator V1 output signal disconnects the first switch element S1, the gate voltage of the first inverter M1 and the second inverter M6 begins to raise, voltage comparator U1 is positioned at before the second inverter M6, so when the driving signal at voltage comparator U1 inverting input rises to the setting voltage that is higher than reference voltage source V5, the output of voltage comparator U1 is with second switch element S2 conducting, thereby drag down the voltage on the quick breaking circuit M2 gate pole, turn-off thus quick breaking circuit M2, only remaining at a slow speed breaking circuit M5.Afterwards, the gate voltage of the first inverter M1 and the second inverter M6 continues to be increased to conducting voltage, the first inverter M1 and the second inverter M6 conducting, drag down the voltage at a slow speed the breaking circuit M5 and N-type field effect transistor M3 gate pole, turn-off N-type field effect transistor M3, turn-off simultaneously at a slow speed breaking circuit M5, reach thus the purpose of the stopcock power supply field effect transistor M4 that slows down.
In sum, field effect transistor drive circuit described in the utility model, it has the delay adjustable function, and efficient is high, and power consumption is little.When gate voltage began to descend from platform, the trigger voltage comparator changed output state.The variation of this state then changes the turn-off speed of field effect transistor, reaches the purpose that reduces overshoot voltage.This high-speed comparator also can be realized with diverse ways.It for example is a digital delay circuit.When gate voltage drops to a certain degree, trigger the turn-off speed that this delay circuit reduces field effect transistor.
The above, only be embodiment of the present utility model, be not that the utility model is done any pro forma restriction, although the utility model discloses as above with embodiment, yet be not to limit the utility model, any those skilled in the art, within not breaking away from the technical solutions of the utility model scope, when the technology contents that can utilize above-mentioned announcement is made a little change or is modified to the equivalent embodiment of equivalent variations, in every case be not break away from the technical solutions of the utility model content, any simple modification that foundation technical spirit of the present utility model is done above embodiment, equivalent variations and modification all still belong in the scope of technical solutions of the utility model.
Claims (10)
1. field effect transistor drive circuit, be used for driving switch power supply field effect transistor, this field effect transistor drive circuit comprises working power, drive signal generating circuit, delay driving circuit, delay circuit, wherein, working power and driving signal generating circuit, delay driving circuit and delay circuit are connected, drive signal generating circuit, delay driving circuit and delay circuit connect and further are connected to the field effect transistor of Switching Power Supply successively, wherein, described drive circuit comprises at a slow speed breaking circuit and quick breaking circuit, delay driving circuit comprises the first inverter, the second inverter and voltage comparator, the first inverter offers at a slow speed breaking circuit driving signal, and the second inverter provides the drive circuit signal to quick breaking circuit; Voltage comparator is positioned at before the second inverter, when the driving signal of voltage comparator inverting input rises to when being higher than a reference voltage, turn-offs quick breaking circuit, only remaining at a slow speed breaking circuit; Until at a slow speed breaking circuit is turn-offed in the first inverter and the second inverter conducting.
2. field effect transistor drive circuit according to claim 1, it is characterized in that, described driving signal generating circuit comprises the first resistance, drive signal generator, the second resistance and the first switch element, the second resistance is connected in the drive signal generator two ends, and the positive input terminal of the first switch element is connected in the drive signal generator positive pole, the negative pole common ground of the negative input end of the first switch element and drive signal generator; Simultaneously, the positive input terminal of the first switch element is connected to the positive pole of drive circuit power supply by the first resistance, and drive signal generator sends the break-make that drives signal controlling the first switch element.
3. field effect transistor drive circuit according to claim 2, it is characterized in that, described delay driving circuit further comprises reference voltage source, second switch element, comparator power supply and some resistance, the first inverter and the second inverter are used for the driving signal inversion with drive signal generator, and wherein reference voltage source provides described reference voltage to voltage comparator.
4. field effect transistor drive circuit according to claim 3 is characterized in that, described the first inverter and the second inverter are P type field effect transistor.
5. field effect transistor drive circuit according to claim 4, it is characterized in that, the gate pole of described the first inverter is connected to the positive input terminal of the first switch element, the source ground of the first inverter, and the drain electrode of the first inverter is connected to the drive circuit power supply by the 3rd resistance; The gate pole of the second inverter is connected to the positive input terminal of the first switch element, the source ground of the second inverter, and the drain electrode of the second inverter is connected to the drive circuit power supply by the tenth resistance; Voltage comparator is connected between the gate pole and working power of the second inverter, and the positive pole of reference voltage source connects the inverting input of voltage comparator, minus earth; The output of voltage comparator is connected to the positive input terminal of second switch element, the negative input end ground connection of second switch element.
6. field effect transistor drive circuit according to claim 4, it is characterized in that, described drive circuit is a totem drive circuit, it comprises the N-type field effect transistor, breaking circuit at a slow speed, quick breaking circuit and some resistance, the gate pole of N-type field effect transistor is connected to the drain electrode of the first inverter, the source electrode of N-type field effect transistor is connected to the drive circuit power supply, the drain electrode of N-type field effect transistor is connected to the drain electrode of quick breaking circuit by the 13 resistance, the drain electrode of N-type field effect transistor also is connected to the at a slow speed drain electrode of breaking circuit by the first resistance, fast breaking circuit and the at a slow speed source grounding of breaking circuit; The gate pole of breaking circuit is connected to the drain electrode of the first inverter at a slow speed, and the gate pole of breaking circuit is connected to the drain electrode of the second inverter and the positive input terminal of second switch element fast.
7. field effect transistor drive circuit according to claim 3 is characterized in that, described at a slow speed breaking circuit and quick breaking circuit are realized by a P type field effect transistor.
8. field effect transistor drive circuit according to claim 6, it is characterized in that, described Switching Power Supply comprises Switching Power Supply field effect transistor and transformer circuit, the drain electrode of N-type field effect transistor is connected to the gate pole of Switching Power Supply field effect transistor, the source electrode of Switching Power Supply field effect transistor is via the 4th grounding through resistance, and the drain electrode of Switching Power Supply field effect transistor is connected to transformer circuit.
9. field effect transistor drive circuit according to claim 1 is characterized in that, described field effect transistor drive circuit further comprises an antihunt circuit, and antihunt circuit is connected with the field effect transistor of Switching Power Supply.
10. field effect transistor drive circuit according to claim 9, it is characterized in that, described damper circuit comprises diode, the 9th resistance and inductance, after diode and the 9th resistance parallel connection, diode anode one end is connected to the drain electrode of Switching Power Supply field effect transistor, diode cathode one end is connected to electric capacity, another extremely further ground connection of electric capacity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN 201220385365 CN202696455U (en) | 2012-08-06 | 2012-08-06 | Field effect transistor drive circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220385365 CN202696455U (en) | 2012-08-06 | 2012-08-06 | Field effect transistor drive circuit |
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| CN202696455U true CN202696455U (en) | 2013-01-23 |
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| CN 201220385365 Expired - Fee Related CN202696455U (en) | 2012-08-06 | 2012-08-06 | Field effect transistor drive circuit |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102931821A (en) * | 2012-08-06 | 2013-02-13 | 江苏应能微电子有限公司 | Field effect tube driving circuit |
| CN108696268A (en) * | 2018-05-24 | 2018-10-23 | 南京工程学院 | A kind of direct driving circuit of open type GaN FET |
-
2012
- 2012-08-06 CN CN 201220385365 patent/CN202696455U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102931821A (en) * | 2012-08-06 | 2013-02-13 | 江苏应能微电子有限公司 | Field effect tube driving circuit |
| CN102931821B (en) * | 2012-08-06 | 2016-02-10 | 江苏应能微电子有限公司 | Field effect transistor drive circuit |
| CN108696268A (en) * | 2018-05-24 | 2018-10-23 | 南京工程学院 | A kind of direct driving circuit of open type GaN FET |
| CN108696268B (en) * | 2018-05-24 | 2021-09-24 | 南京工程学院 | Direct drive circuit of normally-open GaN FET |
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130123 Termination date: 20160806 |
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| CF01 | Termination of patent right due to non-payment of annual fee |