CN105048855A - Nano-second pulse generator with adjustable pulse width and output impedance - Google Patents
Nano-second pulse generator with adjustable pulse width and output impedance Download PDFInfo
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- CN105048855A CN105048855A CN201510419811.XA CN201510419811A CN105048855A CN 105048855 A CN105048855 A CN 105048855A CN 201510419811 A CN201510419811 A CN 201510419811A CN 105048855 A CN105048855 A CN 105048855A
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Abstract
The invention discloses a nano-second pulse generator with adjustable pulse width and output impedance, which is mainly composed of a direct current power supply, a pulse generation circuit, a drive circuit and a trigger circuit. The pulse generation circuit comprises a Blumlein type pulse forming line, a MOSFET (Metal-Oxide -Semiconductor Field Effect Transistor) and a load; the pulse forming line comprises a first transmission line and a second transmission line, which are coaxial lines and are connected with a circuit board of the pulse generation circuit through a BNC or SMA interface; the MOSFET is connected between an inner conductor and an outer conductor at one end of the first transmission line through a source electrode and a drain electrode; the direct current power supply is connected with the inner conductor at the end of the first transmission line; and the trigger circuit is connected with a grid electrode of the MOSFET through the drive circuit. According to the invention, the double-transmission line Blumlein type pulse forming line is adopted, and the MOSFET is used as a high speed switch, thus, high-frequency nano-second pulse output can be realized, moreover, the output impedance and the pulse width of the power supply are adjustable.
Description
Technical field
The present invention relates to simulation electronic and field of power electronics, particularly relate to a kind of pulsewidth and the adjustable nanosecond pulse power supply of output impedance.
Background technology
The concept of Blumlein type pulse forming line is that A.D.Blumlein proposed in 1948, becomes line also known as dimorphism.Become line relative to simple form, it can obtain the pulse that amplitude equals charging voltage, and simple form becomes line to obtain pulse that amplitude equals charging voltage half.Blumlein type pulse forming line is divided into pairs of transmission line type (as shown in Figure 1A) and compact (as shown in Figure 1B) two kinds.Blumlein type pulse forming line power supply many employings compact Blumlein type pulse forming line of prior art, the such as patent of publication number CN102931948, discloses the high-pressure subnanosecond impulse source of a kind of gas switch and compact Blumlein biography type pulse forming line.This clock adopts the compact Blumlein type pulse forming line of gas switch and particular design to create the pulse of 300kV subnanosecond level.Because this design adopts gas switch, so discharge pulse frequency can not be very high, the length and the impedance that form line are in addition non-adjustable, and this is also the shortcoming of compact Blumlein type pulse forming line.
Summary of the invention
The object of the invention is to the defect overcoming prior art existence, and a kind of pulsewidth of new structure and the adjustable nanosecond pulse power supply of output impedance are provided, technical problem to be solved makes it adopt pairs of transmission line type Blumlein type pulse forming line, and adopt Metal-Oxide Semiconductor field-effect transistor (Metal-Oxide-SemiconductorField-EffectTransistor, MOSFET) as speed-sensitive switch, form the pulse power, by adopting BNC or SMA as the interface of circuit board forming line and pulse generating circuit, changing in pulse generating circuit the length forming line, to realize pulse power output pulse width adjustable arbitrarily, pulse power output impedance is realized adjustable by parallel connection many Blumlein type pulse forming lines, realize nanosecond pulse by MOSFET many series connection to export.
The object of the invention to solve the technical problems realizes by the following technical solutions.A kind of pulsewidth proposed according to the present invention and the adjustable nanosecond pulse power supply of output impedance, it comprises: DC power supply, pulse generating circuit, drive circuit and circuits for triggering; Described pulse generating circuit comprises: Blumlein type pulse forming line, MOSFET and load, described Blumlein type pulse forming line comprises the first transmission line and the second transmission line, described first transmission line and described second transmission line are coaxial line, and the inner wire of described first transmission line one end is connected with the inner wire of described second transmission line one end, between the outer conductor that described load is connected to described second this end of transmission line and earth point, between the inner wire that described MOSFET is connected to the described first transmission line other end by source electrode and drain electrode and outer conductor; Described DC power supply is connected with the inner wire of the described first transmission line other end, the input of described circuits for triggering is connected with signal generator, the output of described circuits for triggering is connected with the input of described drive circuit, and the output of described drive circuit is connected with the grid of described MOSFET; Wherein said first transmission line and the two ends of described second transmission line are connected with the circuit board of pulse generating circuit respectively by BNC or SMA interface, thus be connected to form described pulse generating circuit with the described MOSFET on described circuit board and described load.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
Aforesaid a kind of pulsewidth and the adjustable nanosecond pulse power supply of output impedance, wherein said pulse generating circuit also comprises current-limiting resistance, and described current-limiting resistance is connected between the inner wire of described DC power supply and the described first transmission line other end.
Aforesaid a kind of pulsewidth and the adjustable nanosecond pulse power supply of output impedance, wherein the described first transmission line other end inner wire be connected with multiple MOSFET connected between outer conductor.
Aforesaid a kind of pulsewidth and the adjustable nanosecond pulse power supply of output impedance, in described pulse generating circuit, be wherein parallel with two the above Blumlein type pulse forming lines, wherein the inner wire of two the above the first transmission lines and outer conductor are in parallel respectively, the inner wire of two the above the second transmission lines and outer conductor are in parallel respectively, and in one end that the inner wire of described first transmission line of two more parallels is connected with the inner wire of described second transmission line of two more parallels, the outer conductor of described first transmission line of two more parallels is connected with the outer conductor of described second transmission line of two more parallels.
Aforesaid a kind of pulsewidth and the adjustable nanosecond pulse power supply of output impedance, wherein said
Aforesaid a kind of pulsewidth and the adjustable nanosecond pulse power supply of output impedance, wherein said drive circuit comprises: optical coupler, DC-DC converter and MOSFET driving chip, the input of described optical coupler is connected with the output of described circuits for triggering, the output of described optical coupler is connected with the input of described MOSFET driving chip, the output of described MOSFET driving chip is connected with the grid of described MOSFET, and described MOSFET driving chip is connected with power supply by described DC-DC converter.
Aforesaid a kind of pulsewidth and the adjustable nanosecond pulse power supply of output impedance, wherein said optical coupler adopts HCPL316, and described MOSFET driving chip adopts IXDN430.
Aforesaid a kind of pulsewidth and the adjustable nanosecond pulse power supply of output impedance, wherein said circuits for triggering comprise 555 chips and monostable flip chip, 1 pin ground connection of described 555 chips, 2 pins are connected with described signal generator, 3 pins are connected with described monostable flip chip, 5 pin completes cross the first capacity earth, 6 pins are by the second capacity earth, 7 pins are connected with power supply by the first resistance, 4 pins connect and are connected with power supply respectively with 8 pins, and the output of described monostable flip chip is connected with the input of described drive circuit.
Aforesaid a kind of pulsewidth and the adjustable nanosecond pulse power supply of output impedance, wherein said monostable flip chip adopts 74HC123,1 pin of described 74HC123,4 pins and 6 pin ground connection, 2 pins are connected with 3 pins of described 555 chips, 3 pins are connected with power supply by the second resistance, and 5 pins are connected with the input of described drive circuit, and 7 pins are by the 3rd capacity earth, 8 pins are connected with power supply, and by the 3rd resistance and described 3rd capacity earth.
By technique scheme, a kind of pulsewidth of the present invention and the adjustable nanosecond pulse power supply of output impedance at least have following advantages and beneficial effect: the present invention is compared to existing Blumlein type pulse forming line power supply, higher frequency nanosecond pulse can be exported, and its power supply output impedance is adjustable, and output pulse width is adjustable.
Above-mentioned explanation is only the general introduction of technical solution of the present invention, in order to technological means of the present invention can be better understood, and can be implemented according to the content of specification, and can become apparent to allow above and other object of the present invention, feature and advantage, below especially exemplified by preferred embodiment, and coordinate accompanying drawing, be described in detail as follows.
Accompanying drawing explanation
Figure 1A is the schematic diagram of the pulse generating circuit adopting pairs of transmission line type Blumlein type pulse forming line.
Figure 1B is the schematic diagram of the pulse generating circuit adopting compact Blumlein type pulse forming line.
Fig. 2 is the composition structural representation of the adjustable nanosecond pulse power supply of pulsewidth of the present invention and output impedance.
Fig. 3 A is the schematic diagram of a preferred embodiment of pulse generating circuit of the present invention.
Fig. 3 B is the schematic diagram of another preferred embodiment of pulse generating circuit of the present invention.
Fig. 4 A is the schematic diagram of the PCB of the pulse generating circuit of Fig. 3 A.
Fig. 4 B is the schematic diagram of the PCB of the pulse generating circuit of Fig. 3 B.
Fig. 5 is the schematic diagram of a preferred embodiment of drive circuit of the present invention.
Fig. 6 is the schematic diagram of a preferred embodiment of circuits for triggering of the present invention.
Fig. 7 is the oscillogram of the nanosecond pulse that the adjustable nanosecond pulse power supply of pulsewidth of the present invention and output impedance exports.
Embodiment
For further setting forth the present invention for the technological means reaching predetermined goal of the invention and take and effect, below in conjunction with accompanying drawing and preferred embodiment, to a kind of pulsewidth proposed according to the present invention and adjustable its embodiment of nanosecond pulse power supply, structure, feature and the effect thereof of output impedance, be described in detail as follows.
The present invention utilizes the fast switch of MOSFET and pairs of transmission line type Blumlein type pulse forming line to form nanosecond pulse power supply.Refer to shown in Fig. 2 and Fig. 3 A, Fig. 2 is the composition structural representation of the adjustable nanosecond pulse power supply of pulsewidth of the present invention and output impedance.Fig. 3 A is the schematic diagram of a preferred embodiment of pulse generating circuit of the present invention.Pulsewidth of the present invention and the adjustable nanosecond pulse power supply of output impedance form primarily of DC power supply 1, pulse generating circuit 2, drive circuit 3 and circuits for triggering 4.By signal generator 5 external trigger output pulse signal.Wherein pulse generating circuit 2 forms primarily of Blumlein type pulse forming line, MOSFET and load RL, Blumlein type pulse forming line comprises the first transmission line T1 and the second transmission line T2, first transmission line T1 and the second transmission line T2 is coaxial line, the inner wire of first transmission line T1 one end is connected with the inner wire of second transmission line T2 one end, between the outer conductor that load RL is connected to second this end of transmission line T2 and earth point, between the inner wire that MOSFET is connected to the first transmission line T1 other end by source electrode and drain electrode and outer conductor.DC power supply 1 is connected with the inner wire of the first transmission line T1 other end, and the input of circuits for triggering 4 is connected with signal generator 5, and the output of circuits for triggering 4 is connected with the input of drive circuit 3, and the output of drive circuit 3 is connected with the grid of MOSFET.As shown in Figure 2 A, pulse generating circuit 2 also comprises current-limiting resistance R0, and current-limiting resistance R0 is connected between DC power supply 1 and the inner wire of the first transmission line T1 other end.The first transmission line T1 other end of pulse generating circuit 2 inner wire be connected with multiple MOSFET connected between outer conductor.DC power supply 1 is charged to setting voltage through current-limiting resistance R0 to the first transmission line T1 of Blumlein type pulse forming line and the first transmission line T2, MOSFET is fast conducting within tens nanoseconds, on load RL, the rising pulses that nanosecond has one fixed width is obtained by Blumlein type pulse forming line, after formation pulse, DC power supply 1 also has little time to charge to the first transmission line T1 and the first transmission line T2 again.
Referring to shown in Fig. 4 A, is the schematic diagram of the PCB of the pulse generating circuit of Fig. 3 A.First transmission line T1 of Blumlein type pulse forming line and the two ends of the second transmission line T2 are respectively BNC or SMA interface, on the circuit board of pulse generating circuit, correspondence is welded with BNC or SMA interface, first transmission line T1 of Blumlein type pulse forming line is connected with the circuit board of pulse generating circuit respectively by BNC or SMA interface with the second transmission line T2, thus is connected to form pulse generating circuit 2 with the MOSFET on circuit board and load RL.Because pulse duration is determined by the length of the first transmission line T1 and the first transmission line T2, BNC or SMA interface can make the first transmission line T1 and the first transmission line T2 from circuit board disassembling just, when hope changes output pulse width, by changing the first transmission line T1 and the second transmission line T2 of other length, pulse power output pulse width can be realized adjustable arbitrarily.Wherein interface J5 is the interface of pulse generating circuit 2 and DC power supply 1.
Referring to shown in Fig. 3 B, is the schematic diagram of another preferred embodiment of pulse generating circuit of the present invention.The difference of the present embodiment and Fig. 3 A embodiment is: in pulse generating circuit 2, be parallel with two Blumlein type pulse forming lines, wherein two first transmission line T1_1 of two Blumlein type pulse forming lines, the inner wire of T1_2 and outer conductor are in parallel respectively, two second transmission line T2_1, the inner wire of T2_2 and outer conductor are in parallel respectively, and at two first transmission line T1_1 in parallel, the second transmission line T2_1 that the inner wire of T1_2 is in parallel with two, one end of the inner wire connection of T2_2, two first transmission line T1_1 in parallel, the second transmission line T2_1 that the outer conductor of T1_2 is in parallel with two, the outer conductor of T2_2 connects, the output impedance of the pulse power can be reduced like this.Such as: in the embodiment in fig. 3 a, the impedance of the first transmission line T1 and the second transmission line T2 is respectively 50 Ω, then power supply output impedance is 100 Ω; In the embodiment of Fig. 3 B, Blumlein type pulse forming line is two parallel connections, so impedance is 25 Ω, then power supply output impedance is 50 Ω.Fig. 4 B is the schematic diagram of the PCB of the pulse generating circuit of Fig. 3 B.The present invention, by more than two Blumlein type pulse forming lines in parallel in pulse generating circuit 2, can realize pulse power output impedance adjustable.
Referring to shown in Fig. 5, is the schematic diagram of a preferred embodiment of drive circuit of the present invention.Drive circuit 3 of the present invention can form primarily of optical coupler 31, DC-DC converter 32 and MOSFET driving chip 33, wherein the input of optical coupler 31 is connected with the output of circuits for triggering 4, the output of optical coupler 31 is connected with the input of MOSFET driving chip 33, the output of MOSFET driving chip 33 is connected with the grid of MOSFET, and MOSFET driving chip 33 is connected with power supply by DC-DC converter 32.In this example, optical coupler 31 adopts HCPL316, MOSFET driving chip 33 to adopt IXDN430.Pulse triggering signal is input to drive circuit 3 by circuits for triggering 4, is isolated by optical coupler 31, and MOSFET driving chip 33 produces drive singal, and MOSFET driving chip 33 is isolated power supply by DC-DC converter 32.
Referring to shown in Fig. 6, is the schematic diagram of a preferred embodiment of circuits for triggering of the present invention.Circuits for triggering 4 of the present invention can form primarily of 555 chips 41 and monostable flip chip 42, are used for limiting the incoming frequency of triggering signal by 555 chips 41, are used for restriction drive singal pulsewidth by monostable flip chip 42.Wherein 1 pin ground connection of 555 chips 41,2 pins are connected with signal generator 5,3 pins are connected with monostable flip chip 42,5 pin completes cross the first electric capacity C1 ground connection, 6 pins are by the second electric capacity C2 ground connection, 7 pins are connected with power supply by the first resistance R1, and 4 pins connect and are connected with power supply respectively with 8 pins, and the output of monostable flip chip 42 is connected with the input of drive circuit 3.Monostable flip chip 42 of the present invention can adopt 74HC123, wherein 1 pin of 74HC123,4 pins and 6 pin ground connection, 2 pins are connected with 3 pins of 555 chips 41,3 pins are connected with power supply by the second resistance R2,5 pins are connected with the input of drive circuit 3,7 pins are by the 3rd electric capacity C3 ground connection, and 8 pins are connected with power supply, and by the 3rd resistance R3 and the 3rd electric capacity C3 ground connection.
Referring to shown in Fig. 7, is the oscillogram of the nanosecond pulse that the adjustable nanosecond pulse power supply of pulsewidth of the present invention and output impedance exports.In an instantiation of the present invention, the switch mosfet speed that the pulse power adopts is 20ns, due to the sharpening of Blumlein type pulse forming line paired pulses, export pulse falling edge and be less than 5ns, pulsewidth is adjustable at 0-40ns, output impedance is that 100 Ω and 50 Ω are adjustable, export peak impulse voltage at 0-800V, amplified by pulse transformer and also can obtain higher output voltage, at present by special Pulse Transformer Design, crest voltage doubles, and can reach 1.6kV.
Dimorphism becomes the concept of line to be used in the pulse power of low pressure and high frequency by the present invention, can export the pulse signal meeting index, and cost reduces greatly.The pulse power of the type can be applied in photoelectric device driving simultaneously, and electromagnetism loads, tumour ablation, the aspects such as biological cell assays.So the present invention not only has novelty also have fine applicability simultaneously.
The above, it is only preferred embodiment of the present invention, not any pro forma restriction is done to the present invention, although the present invention discloses as above with preferred embodiment, but and be not used to limit the present invention, any those skilled in the art, do not departing within the scope of technical solution of the present invention, make a little change when the technology contents of above-mentioned announcement can be utilized or be modified to the Equivalent embodiments of equivalent variations, in every case be do not depart from technical solution of the present invention content, according to any simple modification that technical spirit of the present invention is done above embodiment, equivalent variations and modification, all still belong in the scope of technical solution of the present invention.
Claims (8)
1. pulsewidth and the adjustable nanosecond pulse power supply of output impedance, is characterized in that it comprises: DC power supply, pulse generating circuit, drive circuit and circuits for triggering; Described pulse generating circuit comprises: Blumlein type pulse forming line, MOSFET and load, described Blumlein type pulse forming line comprises the first transmission line and the second transmission line, described first transmission line and described second transmission line are coaxial line, and the inner wire of described first transmission line one end is connected with the inner wire of described second transmission line one end, between the outer conductor that described load is connected to described second this end of transmission line and earth point, between the inner wire that described MOSFET is connected to the described first transmission line other end by source electrode and drain electrode and outer conductor; Described DC power supply is connected with the inner wire of the described first transmission line other end, the input of described circuits for triggering is connected with signal generator, the output of described circuits for triggering is connected with the input of described drive circuit, and the output of described drive circuit is connected with the grid of described MOSFET; Wherein said first transmission line and the two ends of described second transmission line are connected with the circuit board of pulse generating circuit respectively by BNC or SMA interface, thus be connected to form described pulse generating circuit with the described MOSFET on described circuit board and described load.
2. pulsewidth according to claim 1 and the adjustable nanosecond pulse power supply of output impedance, it is characterized in that wherein said pulse generating circuit also comprises current-limiting resistance, described current-limiting resistance is connected between the inner wire of described DC power supply and the described first transmission line other end.
3. pulsewidth according to claim 1 and the adjustable nanosecond pulse power supply of output impedance, it is characterized in that wherein the described first transmission line other end inner wire be connected with multiple MOSFET connected between outer conductor.
4. pulsewidth according to claim 1 and the adjustable nanosecond pulse power supply of output impedance, it is characterized in that in described pulse generating circuit, be wherein parallel with two the above Blumlein type pulse forming lines, wherein the inner wire of two the above the first transmission lines and outer conductor are in parallel respectively, the inner wire of two the above the second transmission lines and outer conductor are in parallel respectively, and in one end that the inner wire of described first transmission line of two more parallels is connected with the inner wire of described second transmission line of two more parallels, the outer conductor of described first transmission line of two more parallels is connected with the outer conductor of described second transmission line of two more parallels.
5. pulsewidth according to claim 1 and the adjustable nanosecond pulse power supply of output impedance, it is characterized in that wherein said drive circuit comprises: optical coupler, DC-DC converter and MOSFET driving chip, the input of described optical coupler is connected with the output of described circuits for triggering, the output of described optical coupler is connected with the input of described MOSFET driving chip, the output of described MOSFET driving chip is connected with the grid of described MOSFET, and described MOSFET driving chip is connected with power supply by described DC-DC converter.
6. pulsewidth according to claim 5 and the adjustable nanosecond pulse power supply of output impedance, it is characterized in that wherein said optical coupler adopts HCPL316, described MOSFET driving chip adopts IXDN430.
7. pulsewidth according to claim 1 and the adjustable nanosecond pulse power supply of output impedance, it is characterized in that wherein said circuits for triggering comprise 555 chips and monostable flip chip, 1 pin ground connection of described 555 chips, 2 pins are connected with described signal generator, 3 pins are connected with described monostable flip chip, 5 pin completes cross the first capacity earth, 6 pins are by the second capacity earth, 7 pins are connected with power supply by the first resistance, 4 pins connect and are connected with power supply respectively with 8 pins, and the output of described monostable flip chip is connected with the input of described drive circuit.
8. pulsewidth according to claim 7 and the adjustable nanosecond pulse power supply of output impedance, it is characterized in that wherein said monostable flip chip adopts 74HC123,1 pin of described 74HC123,4 pins and 6 pin ground connection, 2 pins are connected with 3 pins of described 555 chips, 3 pins are connected with power supply by the second resistance, and 5 pins are connected with the input of described drive circuit, and 7 pins are by the 3rd capacity earth, 8 pins are connected with power supply, and by the 3rd resistance and described 3rd capacity earth.
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| CN106329981A (en) * | 2016-07-28 | 2017-01-11 | 南京信息工程大学 | Nanosecond-level transmission line pulse source |
| CN106900135A (en) * | 2017-04-10 | 2017-06-27 | 中国科学院电工研究所 | A kind of nanosecond pulse for plasma igniting is superimposed continuous-current plant |
| CN108183623A (en) * | 2017-12-06 | 2018-06-19 | 山东航天电子技术研究所 | A kind of fast rising pulse source of high pressure |
| CN111464068A (en) * | 2020-04-30 | 2020-07-28 | 清华大学 | Nanosecond pulse power supply |
| CN112763959A (en) * | 2020-12-24 | 2021-05-07 | 广东电网有限责任公司电力科学研究院 | External transient overvoltage sensor frequency response calibration platform |
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