JPS59139193A - メモリ装置 - Google Patents

メモリ装置

Info

Publication number
JPS59139193A
JPS59139193A JP59016106A JP1610684A JPS59139193A JP S59139193 A JPS59139193 A JP S59139193A JP 59016106 A JP59016106 A JP 59016106A JP 1610684 A JP1610684 A JP 1610684A JP S59139193 A JPS59139193 A JP S59139193A
Authority
JP
Japan
Prior art keywords
output
sense amplifier
memory device
signal
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59016106A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0259559B2 (enrdf_load_stackoverflow
Inventor
Osamu Minato
湊 修
Toshiaki Masuhara
増原 利明
Katsuhiro Shimohigashi
下東 勝博
Hiroo Masuda
弘生 増田
Yoshiaki Kamigaki
良昭 神垣
Yoshimune Hagiwara
萩原 吉宗
Hideo Sunami
英夫 角南
Yoshio Sakai
芳男 酒井
Eiji Takeda
英次 武田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP59016106A priority Critical patent/JPS59139193A/ja
Publication of JPS59139193A publication Critical patent/JPS59139193A/ja
Publication of JPH0259559B2 publication Critical patent/JPH0259559B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
JP59016106A 1984-02-02 1984-02-02 メモリ装置 Granted JPS59139193A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59016106A JPS59139193A (ja) 1984-02-02 1984-02-02 メモリ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59016106A JPS59139193A (ja) 1984-02-02 1984-02-02 メモリ装置

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP1006004A Division JPH023179A (ja) 1989-01-17 1989-01-17 メモリ装置
JP1006003A Division JPH023178A (ja) 1989-01-17 1989-01-17 メモリ装置

Publications (2)

Publication Number Publication Date
JPS59139193A true JPS59139193A (ja) 1984-08-09
JPH0259559B2 JPH0259559B2 (enrdf_load_stackoverflow) 1990-12-12

Family

ID=11907260

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59016106A Granted JPS59139193A (ja) 1984-02-02 1984-02-02 メモリ装置

Country Status (1)

Country Link
JP (1) JPS59139193A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01130388A (ja) * 1987-11-16 1989-05-23 Nec Corp 半導体記憶装置
US7339850B2 (en) 2004-07-13 2008-03-04 Renesas Technology Corp. Semiconductor memory device allowing high-speed data reading

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS528734A (en) * 1975-07-02 1977-01-22 Fairchild Camera Instr Co Differential sensing amplifier
JPS53149733A (en) * 1977-06-01 1978-12-27 Toshiba Corp Mos dynamic memory device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS528734A (en) * 1975-07-02 1977-01-22 Fairchild Camera Instr Co Differential sensing amplifier
JPS53149733A (en) * 1977-06-01 1978-12-27 Toshiba Corp Mos dynamic memory device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01130388A (ja) * 1987-11-16 1989-05-23 Nec Corp 半導体記憶装置
US7339850B2 (en) 2004-07-13 2008-03-04 Renesas Technology Corp. Semiconductor memory device allowing high-speed data reading

Also Published As

Publication number Publication date
JPH0259559B2 (enrdf_load_stackoverflow) 1990-12-12

Similar Documents

Publication Publication Date Title
US4247791A (en) CMOS Memory sense amplifier
KR930000712B1 (ko) 반도체 집적회로
JPH0453039B2 (enrdf_load_stackoverflow)
US4176289A (en) Driving circuit for integrated circuit semiconductor memory
JPH0634352B2 (ja) メモリ・アレイ・デバイス
KR880004478A (ko) 반도체 기억장치
US4748349A (en) High performance dynamic sense amplifier with voltage boost for row address lines
JPH0518198B2 (enrdf_load_stackoverflow)
US4543500A (en) High performance dynamic sense amplifier voltage boost for row address lines
JPH0142167B2 (enrdf_load_stackoverflow)
US4653029A (en) MOS amplifier and semiconductor memory using the same
US4860257A (en) Level shifter for an input/output bus in a CMOS dynamic ram
JPH05205475A (ja) データ伝送回路
KR960038997A (ko) 반도체 메모리장치의 전류센스앰프회로
JP2756797B2 (ja) Fetセンス・アンプ
JPS62132419A (ja) センス増幅器
KR950010620B1 (ko) 반도체 기억장치
US5012450A (en) Read amplifier for static memories in CMOS technology
JPS59139193A (ja) メモリ装置
JP2752197B2 (ja) ディジタル・メモリ・システム
JPS62154287A (ja) 半導体メモリ装置
US4370575A (en) High performance dynamic sense amplifier with active loads
US4543501A (en) High performance dynamic sense amplifier with dual channel grounding transistor
JPS63205890A (ja) 半導体メモリ装置
JPH03296989A (ja) ダイナミック型センスアンプ