JPS59139033A - フオトマスクブランク - Google Patents
フオトマスクブランクInfo
- Publication number
- JPS59139033A JPS59139033A JP58012904A JP1290483A JPS59139033A JP S59139033 A JPS59139033 A JP S59139033A JP 58012904 A JP58012904 A JP 58012904A JP 1290483 A JP1290483 A JP 1290483A JP S59139033 A JPS59139033 A JP S59139033A
- Authority
- JP
- Japan
- Prior art keywords
- film
- oxide
- photomask blank
- chlorine
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001020 plasma etching Methods 0.000 claims abstract description 15
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000000460 chlorine Substances 0.000 claims abstract description 9
- 229910052801 chlorine Inorganic materials 0.000 claims abstract description 9
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 9
- 239000011521 glass Substances 0.000 claims abstract description 8
- 229910052787 antimony Inorganic materials 0.000 claims abstract description 5
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 5
- 229910052738 indium Inorganic materials 0.000 claims abstract description 4
- 229910052742 iron Inorganic materials 0.000 claims abstract 3
- 229910052759 nickel Inorganic materials 0.000 claims abstract 3
- 229910052702 rhenium Inorganic materials 0.000 claims abstract 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract 3
- 229910052725 zinc Inorganic materials 0.000 claims abstract 3
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 claims description 4
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910000410 antimony oxide Inorganic materials 0.000 claims description 3
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical class [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 claims description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 2
- 229910017052 cobalt Inorganic materials 0.000 claims 2
- 239000010941 cobalt Substances 0.000 claims 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 2
- 239000011133 lead Substances 0.000 claims 2
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims 2
- 239000011701 zinc Substances 0.000 claims 2
- 230000000694 effects Effects 0.000 abstract description 4
- 238000005530 etching Methods 0.000 abstract description 3
- 239000000463 material Substances 0.000 abstract description 3
- 230000003449 preventive effect Effects 0.000 abstract 3
- 229910052745 lead Inorganic materials 0.000 abstract 1
- 230000000873 masking effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 27
- 239000007789 gas Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 229910052715 tantalum Inorganic materials 0.000 description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 229910003437 indium oxide Inorganic materials 0.000 description 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 241000894007 species Species 0.000 description 3
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 229910000480 nickel oxide Inorganic materials 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 239000005407 aluminoborosilicate glass Substances 0.000 description 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 229910000464 lead oxide Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- DYIZHKNUQPHNJY-UHFFFAOYSA-N oxorhenium Chemical compound [Re]=O DYIZHKNUQPHNJY-UHFFFAOYSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910003449 rhenium oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/46—Antireflective coatings
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58012904A JPS59139033A (ja) | 1983-01-31 | 1983-01-31 | フオトマスクブランク |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58012904A JPS59139033A (ja) | 1983-01-31 | 1983-01-31 | フオトマスクブランク |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59139033A true JPS59139033A (ja) | 1984-08-09 |
| JPS6237382B2 JPS6237382B2 (enrdf_load_stackoverflow) | 1987-08-12 |
Family
ID=11818349
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58012904A Granted JPS59139033A (ja) | 1983-01-31 | 1983-01-31 | フオトマスクブランク |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59139033A (enrdf_load_stackoverflow) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60132323A (ja) * | 1983-12-21 | 1985-07-15 | Hitachi Ltd | Ｘ線露光用マスクの製造方法 |
| WO2006027928A1 (ja) * | 2004-09-10 | 2006-03-16 | Shin-Etsu Chemical Co., Ltd. | フォトマスクブランクおよびフォトマスクならびにこれらの製造方法 |
| JP2016009744A (ja) * | 2014-06-24 | 2016-01-18 | 凸版印刷株式会社 | 反射型マスクおよび反射型マスクブランク |
| EP3214496A1 (en) | 2016-03-02 | 2017-09-06 | Shin-Etsu Chemical Co., Ltd. | Photomask blank and method for preparing a photomask |
| KR20170102811A (ko) | 2016-03-02 | 2017-09-12 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 포토마스크 블랭크 및 포토마스크의 제조 방법 |
-
1983
- 1983-01-31 JP JP58012904A patent/JPS59139033A/ja active Granted
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60132323A (ja) * | 1983-12-21 | 1985-07-15 | Hitachi Ltd | Ｘ線露光用マスクの製造方法 |
| WO2006027928A1 (ja) * | 2004-09-10 | 2006-03-16 | Shin-Etsu Chemical Co., Ltd. | フォトマスクブランクおよびフォトマスクならびにこれらの製造方法 |
| US7618753B2 (en) | 2004-09-10 | 2009-11-17 | Shin-Etsu Chemical Co., Ltd. | Photomask blank, photomask and method for producing those |
| JP2016009744A (ja) * | 2014-06-24 | 2016-01-18 | 凸版印刷株式会社 | 反射型マスクおよび反射型マスクブランク |
| EP3214496A1 (en) | 2016-03-02 | 2017-09-06 | Shin-Etsu Chemical Co., Ltd. | Photomask blank and method for preparing a photomask |
| KR20170102811A (ko) | 2016-03-02 | 2017-09-12 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 포토마스크 블랭크 및 포토마스크의 제조 방법 |
| US10678125B2 (en) | 2016-03-02 | 2020-06-09 | Shin-Etsu Chemical Co., Ltd. | Photomask blank and method for preparing photomask |
| US11327393B2 (en) | 2016-03-02 | 2022-05-10 | Shin-Etsu Chemical Co., Ltd. | Photomask blank and method for preparing photomask |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6237382B2 (enrdf_load_stackoverflow) | 1987-08-12 |
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