JPS59139007A - Production of color solid-state image pickup element - Google Patents
Production of color solid-state image pickup elementInfo
- Publication number
- JPS59139007A JPS59139007A JP58012621A JP1262183A JPS59139007A JP S59139007 A JPS59139007 A JP S59139007A JP 58012621 A JP58012621 A JP 58012621A JP 1262183 A JP1262183 A JP 1262183A JP S59139007 A JPS59139007 A JP S59139007A
- Authority
- JP
- Japan
- Prior art keywords
- state image
- color
- color solid
- image sensor
- resin layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 239000011347 resin Substances 0.000 claims abstract description 15
- 229920005989 resin Polymers 0.000 claims abstract description 15
- 230000000873 masking effect Effects 0.000 claims abstract description 4
- 238000000926 separation method Methods 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 12
- -1 polyparaxylylene Polymers 0.000 claims description 4
- 239000004698 Polyethylene Substances 0.000 claims description 2
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 claims description 2
- 229920000052 poly(p-xylylene) Polymers 0.000 claims description 2
- 229920000573 polyethylene Polymers 0.000 claims description 2
- 239000012808 vapor phase Substances 0.000 claims description 2
- 238000003384 imaging method Methods 0.000 claims 1
- 239000000049 pigment Substances 0.000 claims 1
- 238000006116 polymerization reaction Methods 0.000 claims 1
- 238000001947 vapour-phase growth Methods 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052710 silicon Inorganic materials 0.000 abstract description 3
- 239000010703 silicon Substances 0.000 abstract description 3
- 239000007787 solid Substances 0.000 abstract 2
- 238000011109 contamination Methods 0.000 abstract 1
- 238000004806 packaging method and process Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 11
- 238000007796 conventional method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000012790 adhesive layer Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optical Filters (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
【発明の詳細な説明】 本発明はカラー撮像素子の製造方法に関する。[Detailed description of the invention] The present invention relates to a method of manufacturing a color image sensor.
従来のカラー撮像素子は第１図に示すような構造を有し
、つぎのようにして製造される。カラー用固体撮像素子
］をリードフレーム２上の所定位置にグイボンディング
した後、撮像素子１のボンディングパノド３をリードフ
レーム２の所定位置とワイヤボンディングにより接続し
、その後、撮像素子１を取り付けたり−ドフレーム２を
パッケージ４内に固定してから、別途製作した色分離用
フィルター５を撮像素子１の感光領域部に正確に位置合
せして透明接着剤層６により貼り合せ、しかる後、透明
ガラス板等からなる透明窓板７により、パッケージ４の
開口部を封止して作製される。A conventional color image sensor has a structure as shown in FIG. 1, and is manufactured as follows. After bonding the color solid-state image sensor] to a predetermined position on the lead frame 2, the bonding panod 3 of the image sensor 1 is connected to a predetermined position of the lead frame 2 by wire bonding, and then the image sensor 1 is attached. - After fixing the frame 2 in the package 4, a separately manufactured color separation filter 5 is accurately aligned with the photosensitive area of the image sensor 1 and bonded with a transparent adhesive layer 6. The opening of the package 4 is sealed with a transparent window plate 7 made of a glass plate or the like.
このように、従来のカラー固体撮像素子はパッケージに
撮像素子を取り伺けた後、色分離フィルターを貼り合わ
せるため、この工程で撮像素子が汚染されたり、傷つけ
られたりして機能を失なうことがしばしば起る欠点があ
った。In this way, with conventional color solid-state image sensors, after the image sensor is placed in the package, a color separation filter is pasted onto it, so there is a risk that the image sensor may become contaminated or damaged during this process and lose its functionality. There was a drawback that often occurred.
本発明は、以上のような従来技術の欠点をなくし、製造
工程の途中で撮像素子に傷害等を与えな℃・製造方法を
提供することを目的とする。SUMMARY OF THE INVENTION An object of the present invention is to eliminate the above-mentioned drawbacks of the prior art and provide a manufacturing method that does not cause damage to the image sensor during the manufacturing process.
本発明は、以」二の目的を達成するために、ボンディン
グパノド部を形成されたカラー用固体撮像素子のボンデ
ィングパノド部を含む周辺部上をレジスト膜でマスクし
た後、固体撮像素子の感光部領域上に直接色分離フィル
ターを形成し、しかる後、レジスト膜を除去してカラー
固体撮像素子を得るようにしたものである。In order to achieve the following two objects, the present invention masks the peripheral part of the color solid-state image sensor including the bonding panod part with a resist film, and then removes the solid-state image sensor. A color separation filter is formed directly on the photosensitive area, and then the resist film is removed to obtain a color solid-state image sensor.
以下に本発明を実施例により詳細に説明する。The present invention will be explained in detail below using examples.
実際には第２図に示ずように、シリコンウェハ】１上に
感光部、該感光部の周辺部に設けたボンディングパノド
部をもったカラー用固体撮像素子の多数を形成１〜、さ
らに、これらカラー用固体撮像素子の感光部領域上に直
接色分離フィルターを従来法により形成して多数のカラ
ー固体撮像素子１２の配列されたつ、ハを作成した後、
これから個々のカラー固体撮像素子】２を切り出すもの
であるが、理解を容易にするために、１個のカラー固体
撮像素子部分を用いて本発明の製造工程を説明する。In practice, as shown in FIG. 2, a large number of color solid-state image sensing devices having a photosensitive area and a bonding panod area provided around the photosensitive area are formed on a silicon wafer 1. After forming a color separation filter directly on the photosensitive area of these color solid-state image sensors by a conventional method to create an array of a large number of color solid-state image sensors 12,
From this, individual color solid-state image sensors [2] will be cut out, but for ease of understanding, the manufacturing process of the present invention will be explained using one color solid-state image sensor.
第３図は本発明によるカラー固体撮像素子の製造工程の
説明図である。FIG. 3 is an explanatory diagram of the manufacturing process of the color solid-state image sensor according to the present invention.
まず、シリコンウェハ１１の一表面上にカラー用感光部
領域１３と該感光部領域１３０周辺部上にボンディング
パノド１４を通常の方法で形成し、複数のカラー用固体
撮像素子１２′を作製する（図（ａ））。First, on one surface of the silicon wafer 11, a color photosensitive area 13 and a bonding panod 14 are formed on the periphery of the photosensitive area 130 by a conventional method, thereby producing a plurality of color solid-state image sensors 12'. (Figure (a)).
つぎに、素子１２′の感光部領域１３の周辺部のボンデ
ィングパソド１４を含む領域上にマステング層として有
機レジスト層１５を形成する（図（ｂ））。Next, an organic resist layer 15 is formed as a masking layer on a region including the bonding pad 14 around the photosensitive region 13 of the element 12' (FIG. (b)).
ついで、感光部領域１３、ボンディングパノド１４を含
むウェハＪ１の表裏両面上にポリパラキシリレンの気相
成膜による透明有機樹脂層１６．１７を形成する（図（
Ｃ））。なお、透明有機樹脂層としては、上記のほか、
ポリエチレン、塩化ビニル等のプラズマ重合膜を用いて
もよい。Next, transparent organic resin layers 16 and 17 are formed by vapor phase film formation of polyparaxylylene on both the front and back surfaces of the wafer J1 including the photosensitive area 13 and the bonding panode 14 (see FIG.
C)). In addition to the above, examples of the transparent organic resin layer include
A plasma polymerized film of polyethylene, vinyl chloride, etc. may also be used.
その後、前記透明有機樹脂１６上の前記撮像素子１２’
の感光部領域１３に対応する位置に直接、通常の方法に
より色分離フィルター１８を形成した後、色分離フィル
ター１８、ボンディングバノド１４を含む全面上に透明
有機樹脂層１９を形成する（図（ｄ））。After that, the image sensor 12' on the transparent organic resin 16 is
A color separation filter 18 is formed directly at a position corresponding to the photosensitive area 13 by a conventional method, and then a transparent organic resin layer 19 is formed on the entire surface including the color separation filter 18 and the bonding band 14 (see FIG. d)).
なお、色分離フィルターとして・は有機染色フィルター
、ＳＲフィルター、多層干渉膜フィルター等を用いるこ
とができる。Note that as the color separation filter, an organic dye filter, SR filter, multilayer interference film filter, etc. can be used.
つぎに、ボンディングパッド１４上のレジスト層１５を
その上の透明有機樹脂層１６．１９と共にリフトオフ法
により剥離、除去する（図（ｅ））。Next, the resist layer 15 on the bonding pad 14 is peeled off and removed together with the transparent organic resin layer 16.19 thereon by a lift-off method (FIG. (e)).
最後に、つ、・・］１の裏面を研磨して透明有機樹脂層
Ｊ７を除去した後、ウェハ１１を切断すれば、カラー固
体撮像素子１２が得られる（図（ｆ））。Finally, after polishing the back surface of 1 to remove the transparent organic resin layer J7, the wafer 11 is cut to obtain a color solid-state image sensor 12 (FIG. (f)).
実際には、以上のようにして得たカラー固体撮像素子Ｊ
２を従来と同様にリードフレームに取り伺けた後、パッ
ケージングするものである。Actually, the color solid-state image sensor J obtained as above
2 is placed on a lead frame in the same way as before, and then packaged.
以上説明したように、本発明においては、カラー用固体
撮像素子と色分離フィルターを一体に製作した後リード
フレームに取り付け、しかる後パッケージングするので
、従来法のようにカラー用固体撮像素子と別個に作製し
た色分離フィルターとのパッケージ内での接着工程がな
く、接着工程において撮像素子を汚染したり、傷つけた
りすることがない利点がある。さらに、本発明の方法は
固体撮像素子上に直接色分離フィルターを加工する方法
であるが、色分離フィルターの加工工程で、固体撮像素
子を汚染したり、傷つけたりすることがない。As explained above, in the present invention, the color solid-state image sensor and the color separation filter are manufactured integrally, attached to a lead frame, and then packaged. There is no adhesion process within the package with the color separation filter manufactured in 1995, and there is an advantage that the image sensor is not contaminated or damaged in the adhesion process. Furthermore, although the method of the present invention is a method of processing a color separation filter directly on a solid-state image sensor, the solid-state image sensor is not contaminated or damaged in the process of processing the color separation filter.
第１図は従来のカラー固体撮像素子の断面図、第２図は
ウェハ上に作製されるカラー撮像素子の配列を示す図、
第３図は本発明によるカラー固体撮像素子の製造工程の
概略を示す図である。
図において、
１：カラー用固体撮像素子
２ ： ！Ｊ −）”フレーム ３：ボンディングパッ
ド４：バノケージ ５：色分離フィルター６：接着
剤層 ７：透明窓板
１１：ウーハ １２：カラー固体撮像素子１３
：感光部領域 １４：ボ／ディングパッド１５：有
機レジスト層 １６．１７＋透明有機樹脂層１８：色分
離フィルター １９°透明有機樹脂層代理人弁理士
中 村 純之助FIG. 1 is a cross-sectional view of a conventional color solid-state image sensor, and FIG. 2 is a diagram showing the arrangement of color image sensors fabricated on a wafer.
FIG. 3 is a diagram schematically showing the manufacturing process of a color solid-state image sensor according to the present invention. In the figure, 1: Color solid-state image sensor 2: ! J-)” frame 3: Bonding pad 4: Vano cage 5: Color separation filter 6: Adhesive layer 7: Transparent window plate 11: Woofer 12: Color solid-state image sensor 13
: Photosensitive area 14: Board/ding pad 15: Organic resist layer 16.17+Transparent organic resin layer 18: Color separation filter 19°Transparent organic resin layer Patent attorney
Junnosuke Nakamura
Claims (1)
部領域周辺部の少なくともボンディングバンド部上にマ
スキング層として有機レジスト層を形成した後、前記ウ
ェノ・の表裏両面に透明有機樹脂層を気相成膜し、該樹
脂層上の前記撮像素子の感光部領域に対応する位置に直
接色分離フィルターを形成し、さらに少なくとも該色分
離フィルター上に透明有機樹脂層を形成し、しかる後、
前記レジスト層を該レジスト層上の前記透明樹脂層と共
に除去することを特徴とするカラー固体撮像素子の製造
方法。 ２、特許請求の範囲第１項記載のカラー固体撮像素子の
製造方法において、前記透明有機樹脂層はポリパラキシ
リレンを気相成膜１−だもの、もしくはポリエチレンま
たは塩化ビニルをプラズマ重合したものであることを特
徴とするカラー固体撮像素子の製造方法。 ３、特許請求の範囲第１項または第２項記載のカラー固
体撮像素子の製造方法にお（・て、前記色分離フィルタ
ーは有機染色フィルター、顔料フィルターもしくは多層
干渉膜フィルターであることを特徴とするカラー固体撮
像素子の製：Ｉりｉ方法。[Claims] - After forming an organic resist layer as a masking layer on at least the bonding band portion around the photosensitive area of the color solid-state image pickup device formed on the wafer, an organic resist layer is formed as a masking layer on both the front and back sides of the wafer. A transparent organic resin layer is formed in a vapor phase, a color separation filter is directly formed on the resin layer at a position corresponding to the photosensitive area of the image sensor, and a transparent organic resin layer is further formed at least on the color separation filter. But after that,
A method for manufacturing a color solid-state image sensor, characterized in that the resist layer is removed together with the transparent resin layer on the resist layer. 2. In the method for manufacturing a color solid-state image sensor according to claim 1, the transparent organic resin layer is formed by vapor phase deposition of polyparaxylylene, or by plasma polymerization of polyethylene or vinyl chloride. A method for manufacturing a color solid-state image sensor, characterized in that: 3. The method for manufacturing a color solid-state imaging device according to claim 1 or 2, characterized in that the color separation filter is an organic dye filter, a pigment filter, or a multilayer interference film filter. Manufacture of color solid-state image sensor: Iri method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58012621A JPS59139007A (en) | 1983-01-31 | 1983-01-31 | Production of color solid-state image pickup element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58012621A JPS59139007A (en) | 1983-01-31 | 1983-01-31 | Production of color solid-state image pickup element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59139007A true JPS59139007A (en) | 1984-08-09 |
Family
ID=11810444
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58012621A Pending JPS59139007A (en) | 1983-01-31 | 1983-01-31 | Production of color solid-state image pickup element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59139007A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6180104A (en) * | 1984-09-27 | 1986-04-23 | Matsushita Electronics Corp | Direct forming method of color filter |
| JPH01276739A (en) * | 1988-04-28 | 1989-11-07 | Tokin Corp | Manufacture of ld excited solid state laser element |
| JP2011091436A (en) * | 2011-01-11 | 2011-05-06 | Fujitsu Ltd | Packaged device |
-
1983
- 1983-01-31 JP JP58012621A patent/JPS59139007A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6180104A (en) * | 1984-09-27 | 1986-04-23 | Matsushita Electronics Corp | Direct forming method of color filter |
| JPH01276739A (en) * | 1988-04-28 | 1989-11-07 | Tokin Corp | Manufacture of ld excited solid state laser element |
| JPH0658982B2 (en) * | 1988-04-28 | 1994-08-03 | 株式会社トーキン | Method for manufacturing LD pumped solid-state laser device |
| JP2011091436A (en) * | 2011-01-11 | 2011-05-06 | Fujitsu Ltd | Packaged device |
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