JP4328538B2 - Manufacturing method of semiconductor device - Google Patents

Manufacturing method of semiconductor device Download PDF

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Publication number
JP4328538B2
JP4328538B2 JP2003010718A JP2003010718A JP4328538B2 JP 4328538 B2 JP4328538 B2 JP 4328538B2 JP 2003010718 A JP2003010718 A JP 2003010718A JP 2003010718 A JP2003010718 A JP 2003010718A JP 4328538 B2 JP4328538 B2 JP 4328538B2
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JP2004228119A (en
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幸之 野世
栄造 藤井
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Panasonic Corp
Panasonic Holdings Corp
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Panasonic Corp
Matsushita Electric Industrial Co Ltd
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【0001】
【発明の属する技術分野】
本発明は撮像機能または受光機能を有する半導体素子が搭載されたパッケージにおいてガラス板(リッド)の代わりに剥離可能な防塵膜を備えた半導体装置に関するものである。
【0002】
【従来の技術】
以下、従来の撮像機能または受光機能を有する半導体素子(例えば、撮像素子や受光素子など)4をパッケージの凹部に搭載する半導体装置1の斜視図である図21とそれに適用される防塵、防湿を目的としたガラス板11の斜視図である図20を用いて説明する。
【0003】
従来のガラス板11はガラス板をまず研磨で所定の厚さに削り、ケミカルまたはメカニカルによる方法でガラス表面のキズや汚れをとりながら所定の厚みに仕上げる。つぎに所定の厚みに仕上げられたガラス板11を半導体装置1のパッケージ本体2の外囲器上面3に搭載し得る寸法に個片化する。個片化は0.5μm〜10μm径の微粒ダイヤモンドが樹脂やメッキで堆積された金属と共に10μm〜50μmの円板状の極薄刃の先端部分に固定された刃物を用いて行われる。
【0004】
個片化は切断部を水で冷却しながら円板状の極薄刃を高速で回転させて行われる。そして切断された個片群は洗浄と乾燥が施されて半導体装置1に取り付けられる個片ガラス板11となる。このガラス板11を半導体素子4が搭載されたパッケージ本体2周囲の外囲器上面3に接着するが、接着はまず外囲器上面3に適量の接着剤を塗布する。この時使用される接着剤は感熱性または感光性のいずれか一方もしくは両方の特性を有するものを用いる。外囲器上面3に適量塗布した接着剤の上に先のガラス板11を正しく位置合わせして載せて、加熱や紫外線の照射でガラス板11を接着剤で外囲器上面3に接着する。このガラス板11は各機器に組み込まれる際も取り付けられたまま使用される。
【0005】
また、このガラス板11の保護シートに関する技術も知られている(例えば、特許文献1参照)。
【0006】
【特許文献1】
特開平7−326650号公報(第2頁、図8)
【0007】
【発明が解決しようとする課題】
しかしながら、この従来の防塵を目的としてパッケージ本体の外囲器上面にガラス板が接着された構成の半導体装置は、光学機器に組み込まれた場合にガラス板による光の吸収が生じて撮像面での受光効率を低下させる原因となる。またガラスの入光面と出光面の両面で光の反射が起こり多重反射等で固体撮像装置に対して光信号雑音として悪影響を及ぼす。さらにガラス板は光学機器に組み込まれたままになるため高い光学的平坦度や厚み精度が要求されるばかりでなく、ガラス板は無機材料の合成物であるためα放射線源のウラニウムやトリウムの微量混入による半導体素子面の放射線損傷を避けるために高純度の原材料が必要となり、さらに上記ガラス両面での光の反射を防ぐために反射防止膜が形成される等の理由で非常に高価な部品になるという課題を有していた。
【0008】
【課題を解決するための手段】
この課題を解決するために、本発明の半導体装置は凹部を有するパッケージと、凹部に搭載された半導体素子と、凹部を覆うようにパッケージ上面に粘着膜を介して接合された透明な防塵膜とを備え、粘着膜は光照射により粘着性が低下することを特徴とする。
【0009】
この構成により、セット製品や各種モジュールへの組み込み前後に半導体装置に光照射をしてそれまでに付着したダストなどと一緒に容易に防塵膜を剥離、除去でき、またガラス板がないことから上記した各課題が存在しない。
【0010】
また、本発明の半導体装置の製造方法は、粘着膜を介して防塵膜と遮光性の第1基材とが接合された防塵膜シートの第1基材にパッケージの凹部に対応する大きさの開口を形成する工程と、第1基材側から防塵膜シートに光照射をして、開口に対応する部分の粘着膜の粘着性を低下させる工程と、防塵膜をパッケージに対応する大きさに切断する工程と、防塵膜を第1基材から剥離し、粘着膜を介してパッケージに接合する工程とを有することを特徴とする。
【0011】
この構成により、第1基材が粘着膜に光照射するときの遮光マスクにも、防塵膜を切断するときの離散防止シートにもなり、少ない部材で半導体装置を製造することができる。また、防塵膜に接合された粘着膜は光照射された任意の領域の粘着性が低下しており、パッケージに接合されたときに、半導体素子やそのワイヤなどに付着して問題を起こすことがなく、一方で光未照射の領域はそのまま第1基材と防塵膜との接合に用いることができる。
【0012】
また、本発明の半導体装置の製造方法は、糊材を介して防塵膜の一面と遮光性の第1基材とが接合され、かつ、粘着膜を介して防塵膜の他面と第2基材とが接合された防塵膜シートの第1基材に凹部に対応する大きさの開口を形成する工程と、第1基材側から防塵膜シートに光照射をして、開口に対応する部分の粘着膜の粘着性を低下させる工程と、防塵膜をパッケージに対応する大きさに切断する工程と、防塵膜を第2基材から剥離し、粘着膜を介してパッケージに接合する工程とを有することを特徴とする。
【0013】
この構成により、第1基材に開口を形成する工程と防塵膜を切断する工程とを同じ方向からの加工ででき、これらの工程間で防塵膜シートを裏返す必要がなく、製造が容易となる。
【0014】
また、本発明の半導体装置の製造方法の粘着膜は光照射により固化して粘着性が低下するものであることを特徴とする。
【0015】
この構成により、固化した粘着膜は経時変化で劣化しても、ダストとなって半導体素子上に落下、積層し、問題となることはない。
【0016】
【発明の実施の形態】
以下本発明の実施の形態について、図面を参照しながら説明する。
【0017】
(実施の形態1)
図1から図9は本発明の実施の形態1における防塵膜9を構成するための各層と各形成工程の斜視図である。また図10(a)から図10(h)は図1から図9の主要工程の断面図である。
【0018】
図1のように本発明の防塵膜9を作り出す膜は3層(粘着膜、糊材層を含むと5層)の積層膜(防塵膜シート)8で構成されており、第一の層(第2基材)5はポリオレフィン、ポリプロピレン、ポリエステル、ポリエチレンテレフタレート等であり、できればフレキシブルなものが良く、第二の層6はポリエチレンテレフタレート、ポリエチレン、アクリル系等の透明基材(防塵膜)と紫外線反応型の透明性の高いアクリル系強粘着性糊材(粘着膜)12の積層構造であり、第三の層7は暗色顔料を練りこみ遮光性にされたポリオレフィン、ポリプロピレン、ポリエステル、ポリエチレンテレフタレート等の基材(第1基材)と弱粘着性糊材13の積層である。
【0019】
それぞれの層は図2のように貼り合わせて透明の第二の層6が第一の層5と第三の層7で挟まれた1枚のシートになるようにする。
【0020】
この状態で図3のように第三の層7にパッケージ本体2の外囲器上面3の内周とおおむね同様の大きさの開口14を形成する。開口14の形成は打ち抜き金型で第三の層7だけが取り除ける深さに切断溝10を形成し、その後中央部を除去する。また予め開口14が形成された第三の層7を後で貼り合わせても何ら問題はない。
【0021】
そして図4のように開口14が形成された第三の層7を有する積層膜8に適量の光(紫外線)を照射して、第二の層6の開口14部領域の強粘着性糊材12の粘着性を無くすか、弱くする。この場合に、光照射により、強粘着性糊材12は固化すると、後に経時変化があってもダスト発生源となることはない。
【0022】
つぎに図5のように第二の層6上に弱粘着性糊材13で接着されている第三の層7を剥離するが、この糊材は第二の層6上面に糊残渣が残らない性質のものを選定することが重要である。また、この第三の層7はパッケージから第二の層6を剥離するための光照射直前に第二の層6から剥離することもできる。
【0023】
さらに図6のように第二の層6の紫外線照射領域の外側をパッケージ本体2の外囲器上面3の外周とおおむね同様の大きさに打ち抜き金型で第二の層6だけが取り除ける深さに切断溝10を形成する。前述したとおり、この溝形成は第三の層7を残したまま行っても何ら問題はない。
【0024】
最後に図7のように余分な第二の層6を取り除き、第一の層5の上面に打ち抜かれた第二の層6、すなわち防塵膜9が貼り付いて残る状態になる。この操作は第三の層7を残して第二の層6を同時に打ち抜く場合は打ち抜き加工後に余分な第二の層6と第三の層7を同時に取り除く。このように第一の層5上に等間隔に配置された状態で残った防塵膜9は図8のように半導体装置群の各パッケージ本体2の外囲器上面3に貼り付けられる。
【0025】
そして図9のように貼り付けられて、その後の加工工程や検査工程で半導体素子4上に付着する塵埃を防ぐ。
【0026】
図9の構造を成す半導体装置1は一連の工程が終了する。そして防塵膜9上から半導体素子4面上だけを覆って、全面に紫外線を照射し、パッケージ本体2の外囲器上面3の防塵膜9接着領域の粘着力を微弱にして、光学機器に組み込む直前に防塵膜9を剥離して適用するものである。
【0027】
また、図10(a)から図10(h)は以上の主要工程における半導体装置1の断面を示したものである。
【0028】
このようにすることでガラス板のない本実施の形態の半導体装置は機器組み込み時の光学特性は従来に比べて大幅に改善され、また材料及び工法から大幅にコスト削減を図ることができる。
【0029】
(実施の形態2)
図11から図19は本発明の実施の形態2における防塵膜9を構成する各層と各形成工程の斜視図である。
【0030】
図11のように本発明の防塵膜9を作り出す膜は2層(糊材を含むと3層)の積層膜(防塵膜シート)8で構成されており、第二の層(防塵膜)6はポリエチレンテレフタレート、ポリエチレン、アクリル系等の透明基材と紫外線反応型の透明性の高いアクリル系強粘着性糊材(粘着膜)12の積層構造であり、第三の層7は暗色顔料を練りこみ遮光性にされたポリオレフィン、ポリプロピレン、ポリエステル、ポリエチレンテレフタレート等の基材(第1基材)である。
【0031】
二種類の層は図12のように貼り合わせて透明の第二の層6は粘着面側を第三の層7に対向するように配置され1枚のシートになるようにする。
【0032】
この状態で図13のように第三の層7にパッケージ本体2の外囲器上面3の内周とおおむね同様の大きさの開口14を形成する。開口14の形成は打ち抜き金型で第三の層7だけが取り除ける深さに切断溝10を形成し、その後中央部を除去する。また予め開口14が形成された第三の層7を後で貼り合わせても何ら問題はない。
【0033】
そして図14のように開口14が形成された第三の層7を介して積層膜8全面に適量の紫外線を照射して、第二の層6の開口14部領域の強粘着性糊材12の粘着性を無くすか、弱くする。
【0034】
つぎに図15のように第二の層6を上にする。
【0035】
さらに図16のように第二の層6の紫外線照射領域の外側をパッケージ本体2の外囲器上面3の外周とおおむね同様の大きさに第二の層6側から打ち抜き金型で第二の層6だけが取り除ける深さに切断溝10を形成する。
【0036】
最後に図17のように第二の層6を取り除き、第三の層7の上面に打ち抜かれた第二の層6、すなわち防塵膜9が貼り付いて残る状態になる。
【0037】
このように第三の層7上に等間隔に配置された状態で残った防塵膜9は図18のように半導体装置1群の各パッケージ本体2の外囲器上面3に貼り付けられる。
【0038】
そして図19のように貼り付けられて、その後の加工工程や検査工程で半導体素子4上に付着する塵埃を防ぐ。
【0039】
図19の構造を成す半導体装置1は一連の工程が終了する。そして防塵膜9上から半導体素子4面上だけを覆って、全面に紫外線を照射し、パッケージ本体2の外囲器上面3の防塵膜9接着領域の粘着力を微弱にして、光学機器に組み込む直前に防塵膜9を剥離して適用するものである。
【0040】
【発明の効果】
以上のように、従来の撮像機能を有する半導体装置のカメラモジュールへの組み込みにおいて、製品の出荷から顧客での装置への組み込みまでの間、塵埃に関する管理を慎重に行わなければならなかったが、本発明の半導体装置によれば製品出荷から装置の組み込み寸前までその管理を必要とせず、実装寸前に清浄雰囲気中で防塵膜(蓋)9を取り外し、そのまま装置に組み込むことができて、さらにパッケージ内部で発見された塵埃も除去することができ、歩留りの向上が図れる。
【0041】
また、本発明の構造を有する半導体装置はガラス板を取り付けずに装置に組み込むために、光学的特性も良好なものが得られる。
【図面の簡単な説明】
【図1】本発明の実施の形態1における半導体装置の積層膜の各構成基材の斜視図
【図2】本発明の実施の形態1における各構成基材を貼り合わせた形態の積層膜の斜視図
【図3】本発明の実施の形態1における第三の層に開口を形成した形態の積層膜の斜視図
【図4】本発明の実施の形態1における第三の層の開口を通して防塵膜の糊材に紫外線を照射している形態の斜視図
【図5】本発明の実施の形態1における紫外線照射後に、積層膜の第三の層を剥離した形態の斜視図
【図6】本発明の実施の形態1における積層膜の第二の層(防塵膜の層)の紫外線照射領域から一定距離隔てた外周を打ち抜いた形態の斜視図
【図7】本発明の実施の形態1における打ち抜かれた外側の第二の層が剥離されて、防塵膜が等間隔に第一の層上に配置されている形態の斜視図
【図8】本発明の実施の形態1におけるパッケージ外囲器上面と防塵膜が対向して配置されている形態の斜視図
【図9】本発明の実施の形態1におけるパッケージ外囲上面に防塵蓋が接着された形態の半導体装置の斜視図
【図10】本発明の実施の形態1における主要工程の断面図
【図11】本発明の実施の形態2における半導体装置の積層膜の各構成基材の斜視図
【図12】本発明の実施の形態2における各構成基材を貼り合わせた形態の積層膜の斜視図
【図13】本発明の実施の形態2における第三の層に開口を形成した形態の積層膜の斜視図
【図14】本発明の実施の形態2における第三の層の開口を通して防塵膜の糊材に紫外線を照射している形態の斜視図
【図15】本発明の実施の形態2における紫外線照射後に、積層膜の第二の層の表面側から見た形態の斜視図
【図16】本発明の実施の形態2における積層膜の第二の層(防塵膜の層)の紫外線照射領域から一定距離隔てた外周を打ち抜いた形態の斜視図
【図17】本発明の実施の形態2における打ち抜かれた外側の第二の層が剥離されて、防塵膜が等間隔に第三の層上に配置されている形態の斜視図
【図18】本発明の実施の形態2におけるパッケージ外囲器上面と防塵膜が対向して配置されている形態の斜視図
【図19】本発明の実施の形態2におけるパッケージ外囲上面に防塵蓋が接着された形態の半導体装置の斜視図
【図20】従来例の固体撮像装置に適用されるガラス板の斜視図
【図21】従来例の固体撮像装置の斜視図
【符号の説明】
1 半導体装置(固体撮像装置)
2 パッケージ本体
3 外囲器上面
4 半導体素子
5 第一の層
6 第二の層
7 第三の層
8 積層膜
9 防塵膜
10 切断溝
12 強粘着性糊材
13 弱粘着性糊材
14 開口
[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a semiconductor device including a dustproof film that can be peeled instead of a glass plate (lid) in a package in which a semiconductor element having an imaging function or a light receiving function is mounted.
[0002]
[Prior art]
Hereinafter, FIG. 21 which is a perspective view of a semiconductor device 1 in which a semiconductor element 4 (for example, an imaging element or a light receiving element) 4 having a conventional imaging function or a light receiving function is mounted in a recess of a package, and dust and moisture prevention applied thereto are shown. The objective glass plate 11 will be described with reference to FIG.
[0003]
The conventional glass plate 11 is first polished to a predetermined thickness by polishing, and finished to a predetermined thickness while removing scratches and dirt on the glass surface by a chemical or mechanical method. Next, the glass plate 11 finished to a predetermined thickness is separated into pieces that can be mounted on the envelope upper surface 3 of the package body 2 of the semiconductor device 1. The singulation is performed by using a blade fixed to the tip of a 10 μm to 50 μm disk-shaped ultrathin blade together with a resin or metal deposited with a fine diamond of 0.5 μm to 10 μm in diameter.
[0004]
The singulation is performed by rotating a disk-shaped ultrathin blade at high speed while cooling the cut portion with water. Then, the cut pieces are cleaned and dried to become individual glass plates 11 attached to the semiconductor device 1. The glass plate 11 is bonded to the envelope upper surface 3 around the package body 2 on which the semiconductor element 4 is mounted. First, an appropriate amount of adhesive is applied to the envelope upper surface 3. As the adhesive used at this time, an adhesive having either or both of heat sensitivity and photosensitivity is used. The previous glass plate 11 is properly aligned and placed on the adhesive applied to the envelope upper surface 3 in an appropriate amount, and the glass plate 11 is bonded to the envelope upper surface 3 with an adhesive by heating or irradiation with ultraviolet rays. The glass plate 11 is used while being attached even when incorporated in each device.
[0005]
Moreover, the technique regarding the protective sheet of this glass plate 11 is also known (for example, refer patent document 1).
[0006]
[Patent Document 1]
JP-A-7-326650 (2nd page, FIG. 8)
[0007]
[Problems to be solved by the invention]
However, a semiconductor device having a structure in which a glass plate is bonded to the upper surface of the envelope of the package main body for the purpose of dust prevention, light absorption by the glass plate occurs when incorporated in an optical instrument, It may cause a decrease in light receiving efficiency. Further, light is reflected on both the light incident surface and the light exit surface of the glass, and multiple reflections or the like adversely affect the solid-state imaging device as optical signal noise. Furthermore, since the glass plate remains incorporated in the optical device, high optical flatness and thickness accuracy are required, and since the glass plate is a composite of inorganic materials, a trace amount of uranium and thorium, which is an α radiation source, is required. High-purity raw materials are required to avoid radiation damage on the semiconductor element surface due to contamination, and the anti-reflection film is formed to prevent reflection of light on both surfaces of the glass. It had the problem that.
[0008]
[Means for Solving the Problems]
In order to solve this problem, a semiconductor device of the present invention includes a package having a recess, a semiconductor element mounted in the recess, and a transparent dust-proof film bonded to the upper surface of the package via an adhesive film so as to cover the recess. The adhesive film is characterized in that its adhesiveness is reduced by light irradiation.
[0009]
With this configuration, the semiconductor device can be irradiated with light before and after being incorporated into a set product or various modules, and the dust-proof film can be easily peeled off and removed together with the dust adhering to it. There are no issues.
[0010]
Further, the method for manufacturing a semiconductor device of the present invention has a size corresponding to the concave portion of the package on the first base of the dust-proof film sheet in which the dust-proof film and the light-shielding first base are joined via the adhesive film. The step of forming the opening, the step of irradiating the dust-proof film sheet from the first substrate side to reduce the adhesiveness of the part of the adhesive film corresponding to the opening, and the size of the dust-proof film corresponding to the package The method includes a step of cutting, and a step of peeling the dust-proof film from the first base material and bonding the dust-proof film to the package via the adhesive film.
[0011]
With this configuration, the first substrate can be used as a light-shielding mask when the adhesive film is irradiated with light, or as a non-discrete sheet when cutting the dust-proof film, and a semiconductor device can be manufactured with a small number of members. In addition, the adhesive film bonded to the dust-proof film has reduced adhesiveness in any area irradiated with light, and when bonded to a package, it may adhere to the semiconductor element and its wires, causing problems. On the other hand, the non-irradiated region can be used as it is for bonding the first base material and the dust-proof film.
[0012]
In addition, in the method for manufacturing a semiconductor device of the present invention, one surface of the dust-proof film and the first light-shielding base material are bonded to each other through the adhesive material, and the other surface of the dust-proof film and the second substrate are bonded to each other through the adhesive film. A step of forming an opening having a size corresponding to the concave portion in the first base material of the dust-proof film sheet bonded with the material, and a portion corresponding to the opening by irradiating the dust-proof film sheet from the first base material side Reducing the adhesiveness of the adhesive film, cutting the dustproof film into a size corresponding to the package, and peeling the dustproof film from the second substrate and joining the package via the adhesive film. It is characterized by having.
[0013]
With this configuration, the step of forming the opening in the first base material and the step of cutting the dust-proof film can be processed from the same direction, and it is not necessary to turn the dust-proof film sheet between these steps, and the manufacturing is facilitated. .
[0014]
In addition, the pressure-sensitive adhesive film of the method for manufacturing a semiconductor device according to the present invention is characterized in that it is solidified by light irradiation to reduce the adhesiveness.
[0015]
With this configuration, even if the solidified adhesive film deteriorates with time, it does not become a problem because it becomes dust and drops and stacks on the semiconductor element.
[0016]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of the present invention will be described below with reference to the drawings.
[0017]
(Embodiment 1)
1 to 9 are perspective views of each layer and each forming process for constituting the dust-proof film 9 in Embodiment 1 of the present invention. FIGS. 10A to 10H are cross-sectional views of the main steps of FIGS.
[0018]
As shown in FIG. 1, the film for producing the dust-proof film 9 of the present invention is composed of a laminated film (dust-proof film sheet) 8 of three layers (5 layers including an adhesive film and a paste material layer), and the first layer ( The second base material 5 is polyolefin, polypropylene, polyester, polyethylene terephthalate, etc., and is preferably flexible, and the second layer 6 is made of a transparent base material (dust-proof film) such as polyethylene terephthalate, polyethylene, acrylic, and ultraviolet light. Reactive type highly transparent acrylic strong adhesive paste (adhesive film) 12 laminated structure, third layer 7 kneaded with dark pigment to make light shielding polyolefin, polypropylene, polyester, polyethylene terephthalate, etc. The base material (first base material) and the weak adhesive paste material 13 are laminated.
[0019]
Each layer is bonded as shown in FIG. 2 so that the transparent second layer 6 is sandwiched between the first layer 5 and the third layer 7.
[0020]
In this state, as shown in FIG. 3, an opening 14 having the same size as the inner periphery of the envelope upper surface 3 of the package body 2 is formed in the third layer 7. The opening 14 is formed by forming a cutting groove 10 to a depth that only the third layer 7 can be removed by a punching die, and then removing the central portion. Further, there is no problem even if the third layer 7 in which the opening 14 is formed in advance is pasted later.
[0021]
Then, an appropriate amount of light (ultraviolet rays) is applied to the laminated film 8 having the third layer 7 in which the opening 14 is formed as shown in FIG. Remove or weaken the 12 stickiness. In this case, when the strong adhesive paste material 12 is solidified by light irradiation, it does not become a dust generation source even if there is a change with time later.
[0022]
Next, as shown in FIG. 5, the third layer 7 bonded to the second layer 6 with the weak adhesive paste 13 is peeled off. However, the glue residue remains on the upper surface of the second layer 6. It is important to select ones that have no properties. Further, the third layer 7 can be peeled off from the second layer 6 immediately before light irradiation for peeling off the second layer 6 from the package.
[0023]
Further, as shown in FIG. 6, the outer side of the ultraviolet irradiation region of the second layer 6 is roughly the same size as the outer periphery of the upper surface 3 of the envelope of the package body 2, and the depth that only the second layer 6 can be removed with a punching die. The cutting groove 10 is formed in As described above, there is no problem even if this groove formation is performed with the third layer 7 left.
[0024]
Finally, as shown in FIG. 7, the excess second layer 6 is removed, and the second layer 6 punched on the upper surface of the first layer 5, that is, the dust-proof film 9 is stuck and remains. In this operation, when the second layer 6 is simultaneously punched while leaving the third layer 7, the excess second layer 6 and third layer 7 are simultaneously removed after the punching process. Thus, the dust-proof film 9 remaining in the state of being arranged at equal intervals on the first layer 5 is attached to the envelope upper surface 3 of each package body 2 of the semiconductor device group as shown in FIG.
[0025]
And it adheres like FIG. 9 and prevents the dust adhering on the semiconductor element 4 at a subsequent process process or inspection process.
[0026]
A series of steps is completed for the semiconductor device 1 having the structure of FIG. Then, only the surface of the semiconductor element 4 is covered from above the dust-proof film 9, and the entire surface is irradiated with ultraviolet rays so that the adhesive force of the adhesion region of the dust-proof film 9 on the envelope upper surface 3 of the package body 2 is weakened and incorporated in the optical device. The dust-proof film 9 is peeled off immediately before application.
[0027]
FIG. 10A to FIG. 10H show cross sections of the semiconductor device 1 in the above main process.
[0028]
By doing so, the optical characteristics of the semiconductor device according to the present embodiment without a glass plate can be greatly improved as compared with the prior art, and the cost can be greatly reduced from the materials and the construction method.
[0029]
(Embodiment 2)
FIG. 11 to FIG. 19 are perspective views of each layer constituting each dust-proof film 9 and each forming process in Embodiment 2 of the present invention.
[0030]
As shown in FIG. 11, the film for creating the dust-proof film 9 of the present invention is composed of a laminated film (dust-proof film sheet) 8 of two layers (three layers when the paste is included), and a second layer (dust-proof film) 6. Is a laminated structure of a transparent base material such as polyethylene terephthalate, polyethylene, acrylic, etc. and a highly UV-sensitive acrylic strong adhesive paste (adhesive film) 12. The third layer 7 is prepared by kneading a dark pigment. It is a base material (first base material) such as polyolefin, polypropylene, polyester, polyethylene terephthalate, etc., which has been made light-shielding.
[0031]
The two kinds of layers are bonded together as shown in FIG. 12, and the transparent second layer 6 is disposed so that the adhesive surface side faces the third layer 7 so as to form one sheet.
[0032]
In this state, as shown in FIG. 13, an opening 14 having the same size as the inner periphery of the envelope upper surface 3 of the package body 2 is formed in the third layer 7. The opening 14 is formed by forming a cutting groove 10 to a depth that only the third layer 7 can be removed by a punching die, and then removing the central portion. Further, there is no problem even if the third layer 7 in which the opening 14 is formed in advance is pasted later.
[0033]
Then, as shown in FIG. 14, an appropriate amount of ultraviolet rays is irradiated on the entire surface of the laminated film 8 through the third layer 7 in which the openings 14 are formed, and the strong adhesive paste 12 in the region of the openings 14 in the second layer 6. Remove or weaken the stickiness.
[0034]
Next, the second layer 6 is turned up as shown in FIG.
[0035]
Further, as shown in FIG. 16, the outer side of the ultraviolet irradiation region of the second layer 6 is roughly the same size as the outer periphery of the upper surface 3 of the envelope of the package body 2 from the second layer 6 side by a punching die. A cutting groove 10 is formed at a depth that only the layer 6 can remove.
[0036]
Finally, as shown in FIG. 17, the second layer 6 is removed, and the second layer 6 punched on the upper surface of the third layer 7, that is, the dust-proof film 9 is stuck and remains.
[0037]
Thus, the dust-proof film 9 remaining in the state of being arranged at equal intervals on the third layer 7 is attached to the envelope upper surface 3 of each package body 2 of the semiconductor device 1 group as shown in FIG.
[0038]
And it adheres like FIG. 19 and prevents the dust adhering on the semiconductor element 4 at a subsequent process process or inspection process.
[0039]
A series of steps is completed for the semiconductor device 1 having the structure of FIG. Then, only the surface of the semiconductor element 4 is covered from above the dust-proof film 9, and the entire surface is irradiated with ultraviolet rays so that the adhesive force of the adhesion region of the dust-proof film 9 on the envelope upper surface 3 of the package body 2 is weakened and incorporated in the optical device. The dust-proof film 9 is peeled off immediately before application.
[0040]
【The invention's effect】
As described above, in the incorporation of a semiconductor device having a conventional imaging function into a camera module, it was necessary to carefully manage dust during the period from product shipment to incorporation into a customer device. According to the semiconductor device of the present invention, it is not necessary to manage it from product shipment to just before installation of the device, the dust-proof film (lid) 9 can be removed in a clean atmosphere just before mounting, and can be incorporated into the device as it is. The dust found inside can be removed, and the yield can be improved.
[0041]
In addition, since the semiconductor device having the structure of the present invention is incorporated in the device without attaching a glass plate, a device having good optical characteristics can be obtained.
[Brief description of the drawings]
FIG. 1 is a perspective view of each constituent substrate of a laminated film of a semiconductor device according to a first embodiment of the present invention. FIG. 2 is a perspective view of a laminated film in a form in which the respective constituent substrates are bonded together according to the first embodiment of the present invention. FIG. 3 is a perspective view of a laminated film in which an opening is formed in the third layer in the first embodiment of the present invention. FIG. 4 is a dustproof through the opening in the third layer in the first embodiment of the present invention. FIG. 5 is a perspective view of a form in which ultraviolet rays are radiated on the film paste material. FIG. 5 is a perspective view of a form in which the third layer of the laminated film is peeled off after ultraviolet irradiation in the first embodiment of the present invention. FIG. 7 is a perspective view of the second embodiment of the laminated film according to the first embodiment of the invention (the dust-proof film layer) in which the outer periphery is punched at a certain distance from the ultraviolet irradiation region. The removed outer second layer is peeled off and the dust-proof film is placed on the first layer at equal intervals. FIG. 8 is a perspective view of a form in which the upper surface of the package envelope and a dust-proof film are arranged to face each other in the first embodiment of the present invention. FIG. 9 is a perspective view of the first embodiment of the present invention. 10 is a perspective view of a semiconductor device in which a dustproof lid is bonded to the upper surface of the package. FIG. 10 is a cross-sectional view of the main steps in the first embodiment of the present invention. FIG. 12 is a perspective view of a laminated film in a configuration in which the constituent substrates in the second embodiment of the present invention are bonded together. FIG. 13 is a perspective view of the laminated film in a second embodiment of the present invention. 14 is a perspective view of a laminated film having an opening formed in the third layer. FIG. 14 is a perspective view of a form in which ultraviolet rays are irradiated to the paste material of the dust-proof film through the opening of the third layer in the second embodiment of the present invention. FIG. 15 shows ultraviolet irradiation according to the second embodiment of the present invention. FIG. 16 is a perspective view of the second layer of the laminated film as viewed from the surface side. FIG. 16 is a constant view from the ultraviolet irradiation region of the second layer (dustproof film) of the laminated film in the second embodiment of the present invention FIG. 17 is a perspective view of a form in which outer peripheries separated by a distance are punched. FIG. 17 is a diagram illustrating a case where the punched outer second layer is peeled off and a dustproof film is arranged on the third layer at regular intervals. FIG. 18 is a perspective view of a form in which the upper surface of the package envelope and a dust-proof film are arranged to face each other in the second embodiment of the present invention. FIG. 19 is a second embodiment of the present invention. FIG. 20 is a perspective view of a glass plate applied to a conventional solid-state imaging device. FIG. 21 is a perspective view of a conventional solid-state imaging device. Figure [Explanation of symbols]
1 Semiconductor device (solid-state imaging device)
2 Package body 3 Envelope top surface 4 Semiconductor element 5 First layer 6 Second layer 7 Third layer 8 Laminated film 9 Dustproof film 10 Cutting groove 12 Strong adhesive paste 13 Weak adhesive paste 14 Opening

Claims (3)

凹部を有するパッケージと、前記凹部に搭載された半導体素子と、前記凹部を覆うように前記パッケージ上面に光照射により粘着性が低下する粘着膜を介して接合された透明な防塵膜とを備えた半導体装置の製造方法であって、
前記粘着膜を介して前記防塵膜と遮光性の第1基材とが接合された防塵膜シートの前記第1基材に前記凹部に対応する大きさの開口を形成する工程と、
前記第1基材側から前記防塵シートに光照射をして、前記開口に対応する部分の前記粘着膜の粘着性を低下させる工程と、
前記防塵膜を前記パッケージに対応する大きさに切断する工程と、
前記防塵膜を前記第1基材から剥離し、前記粘着膜を介して前記パッケージ上面に接合する工程とを有することを特徴とする半導体装置の製造方法。
A package having a recess, a semiconductor element mounted in the recess, and a transparent dustproof film bonded to the upper surface of the package through an adhesive film whose adhesiveness is reduced by light irradiation so as to cover the recess. A method for manufacturing a semiconductor device , comprising:
Forming an opening having a size corresponding to the concave portion in the first base material of the dustproof film sheet in which the dustproof film and the first light-shielding base material are bonded via the adhesive film;
Irradiating the dustproof sheet with light from the first substrate side, and reducing the adhesiveness of the adhesive film of the portion corresponding to the opening;
Cutting the dust-proof film into a size corresponding to the package;
Separating the dust-proof film from the first base material and bonding the dust-proof film to the upper surface of the package through the adhesive film.
凹部を有するパッケージと、前記凹部に搭載された半導体素子と、前記凹部を覆うように前記パッケージ上面に光照射により粘着性が低下する粘着膜を介して接合された透明な防塵膜とを備えた半導体装置の製造方法であって、
糊材を介して前記防塵膜の一面と遮光性の第1基材とが接合され、かつ、前記粘着膜を介して前記防塵膜の他面と第2基材とが接合された防塵膜シートの前記第1基材に前記凹部に対応する大きさの開口を形成する工程と、
前記第1基材側から前記防塵シートに光照射をして、前記開口に対応する部分の前記粘着膜の粘着性を低下させる工程と、
前記防塵膜を前記パッケージに対応する大きさに切断する工程と、
前記防塵膜を前記第2基材から剥離し、前記粘着膜を介して前記パッケージに接合する工程とを有することを特徴とする半導体装置の製造方法。
A package having a recess, a semiconductor element mounted in the recess, and a transparent dustproof film bonded to the upper surface of the package through an adhesive film whose adhesiveness is reduced by light irradiation so as to cover the recess. A method for manufacturing a semiconductor device , comprising:
A dust-proof film sheet in which one surface of the dust-proof film and the first light-shielding base material are joined via a paste material, and the other side of the dust-proof film and the second base material are joined via the adhesive film Forming an opening having a size corresponding to the concave portion in the first base material,
Irradiating the dustproof sheet with light from the first substrate side, and reducing the adhesiveness of the adhesive film of the portion corresponding to the opening;
Cutting the dust-proof film into a size corresponding to the package;
Separating the dust-proof film from the second base material and bonding the dust-proof film to the package through the adhesive film.
前記粘着膜は光照射により固化して粘着性が低下するものであることを特徴とする請求項または請求項に記載の半導体装置の製造方法。Method for producing the adhesive film semiconductor device according to claim 1 or claim 2, wherein the adhesive is solidified by light irradiation is to decrease.
JP2003010718A 2003-01-20 2003-01-20 Manufacturing method of semiconductor device Expired - Fee Related JP4328538B2 (en)

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