JPS59138303A - Method of producing sputter film - Google Patents
Method of producing sputter filmInfo
- Publication number
- JPS59138303A JPS59138303A JP1212783A JP1212783A JPS59138303A JP S59138303 A JPS59138303 A JP S59138303A JP 1212783 A JP1212783 A JP 1212783A JP 1212783 A JP1212783 A JP 1212783A JP S59138303 A JPS59138303 A JP S59138303A
- Authority
- JP
- Japan
- Prior art keywords
- film
- sputter film
- shock resistance
- thermal shock
- mixed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Physical Vapour Deposition (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
（技術分野）
本発明は耐熱衝撃性の優れた絶縁膜又は抵抗体膜をス・
ぐツクによシ製造する方法に関するものである０
（従来技術）
従来、ス・やツタによシイ４子られる酸化膜、例えばザ
ーマルヘッ、ドに用いられるＳ １０２膜は不純物のな
い膜が用いられ、この膜を用いた発熱部の耐熱衝撃特性
に１第］図に示すように電力の相対値０．８０位の加速
試験に耐える性能である。なお図において（１７Ｉ軸は
加速試験において発熱体に加えた電力の相対値、縦軸は
抵抗値変化（％）である。しかしサーマルヘッドの発熱
部においてはさらに高出力化が望まれているのが現況で
ある。一方策２図はＴａ板上にＡｔ２０５板を部分的に
搭載したターケゞットからＲＦスパッタにより得た抵抗
体膜の加速試験結果である。なお、図において点線で示
す曲線は窒化メンタル膜の耐ステップストレス試験結果
で比較のため示した。このＴａ−Ａｔ２０３膜はＡｒガ
スのみで成製できるがさらに高出力化が望まれている。DETAILED DESCRIPTION OF THE INVENTION (Technical Field) The present invention provides a method for manufacturing an insulating film or a resistor film with excellent thermal shock resistance.
0 (Prior art) Conventionally, an oxide film that is produced by S102 or Ivy, such as S102 film used in thermal heads, is a film free of impurities. As shown in Figure 1, the thermal shock resistance of a heat-generating part using this film has the ability to withstand an accelerated test with a relative power value of about 0.80. In the figure (17I axis is the relative value of the electric power applied to the heating element in the accelerated test, and the vertical axis is the change in resistance value (%). However, even higher output is desired in the heat generating part of the thermal head. is the current situation. Figure 2 shows the accelerated test results of a resistor film obtained by RF sputtering from a target in which an At205 plate is partially mounted on a Ta plate. In addition, the curve shown by the dotted line in the figure The results of the step stress resistance test of the nitride mental film are shown for comparison.This Ta-At203 film can be formed using only Ar gas, but higher output is desired.
（発明の目的）
本発明は、このような従来の問題点を解決するもので、
スパッタによるこれら酸化膜及び抵抗体膜中に微量の金
属元素を混入せしめてさらにその性能を高めるようにし
たものである。以下本発明の一実施例を図面によシ詳細
に説明する。(Object of the invention) The present invention solves these conventional problems,
A trace amount of a metal element is mixed into the oxide film and the resistor film by sputtering to further improve their performance. An embodiment of the present invention will be described in detail below with reference to the drawings.
（発明の構成）
ス・ぐツク用ターケゝットにおいてＳｉＯ２膜を成製す
る際、ターケ゛ッ１中に微量のＡｔを含有せしめてスパ
ッタ膜を製造した。このようなス・ぐツク膜に発熱部の
耐熱衝撃試験を行った結果、第ご３図に示すような特性
曲線が得られた。これを第１図に比べると特性が著しく
向上していることが認められる。(Structure of the Invention) When forming a SiO2 film in a target for gas, a small amount of At was contained in the target 1 to produce a sputtered film. As a result of conducting a thermal shock resistance test on the heat generating part of such a suction film, a characteristic curve as shown in FIG. 3 was obtained. Comparing this with FIG. 1, it is recognized that the characteristics are significantly improved.
この実施例は二酸化圭素（Ｓ ｉＯ２）中にＡｔを混入
しした場合の実験結果であるが、Ａｔ以外にＮｉ、Ａｕ
を含有せしめても同様の効果が得られた。This example shows the experimental results when At was mixed into silica dioxide (S iO2), but in addition to At, Ni, Au
A similar effect was obtained even when it was contained.
次に、Ｔａ −Ａｚ２ｏ３系の抵抗体膜において微量の
Ｎｉを混入したスｉＥツタ膜を成製し、これをサーマル
ヘッドに用い連続印字試験を行なったところ、混入しな
いものに比べ寿命は著しく向上した・これらの効果は混
入されたｈｔ 、又はＮｉがスパッタされた各々の粒子
の間隙に混入するためと思われる。従って抵抗体膜とし
てＴａ −ｈｔ２０３以外にＴａ −５ｉ０２ ｐ Ｔ
ａ −ＳｉＣの場合も同様の効果があり、混入金属元素
もＡｔ、Ｎｉ以外にＡｕ等がある。なお、混入する微量
元素は６％以下が好ましい。Next, we created an SiE ivy film containing a small amount of Ni in a Ta-Az2o3-based resistor film, and when we conducted a continuous printing test using this in a thermal head, we found that the lifespan was significantly improved compared to one without Ni. These effects are thought to be due to the mixed Ht or Ni being mixed into the gaps between the sputtered particles. Therefore, in addition to Ta-ht203, Ta-5i02pT is used as a resistor film.
A similar effect is obtained in the case of a-SiC, and the mixed metal elements include Au and the like in addition to At and Ni. Note that the amount of trace elements mixed is preferably 6% or less.
（発明の効果）
以上説明したように本発明製造方法によれば耐熱衝撃性
の擾れたス・千゛ツクによる絶縁膜又は抵抗体膜が得ら
れる効果がある。(Effects of the Invention) As explained above, according to the manufacturing method of the present invention, an insulating film or a resistor film made of a film with poor thermal shock resistance can be obtained.
第１図は従来のスパッタによる酸化膜の耐熱衝撃特性曲
線、第２図は同じく抗体膜における耐熱衝撃特性曲線、
第３図は本発明製造方法における酸化膜の耐熱衝撃特性
曲線を示す図であるＯ特許出願人沖電気工業株式会社Figure 1 shows the thermal shock resistance characteristic curve of the oxide film produced by conventional sputtering, and Figure 2 shows the thermal shock resistance characteristic curve of the antibody film.
FIG. 3 is a diagram showing the thermal shock resistance characteristic curve of the oxide film in the manufacturing method of the present invention. Patent applicant: Oki Electric Industry Co., Ltd.
Claims (1)
素よジなる抵抗体膜全成製する際、ターケ゛ットとして
ｐ、ｔ 、 Ｎｒ又はＡｕの金属元素を微量含有せしめ
ることを特徴とするス・母ツタ膜の製造方法・In the spacing target method, when forming an oxide film or a resistor film made of a plurality of elements, the sprocket base film is characterized by containing a trace amount of a metal element such as p, t, Nr or Au as a target. Production method·
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1212783A JPS59138303A (en) | 1983-01-29 | 1983-01-29 | Method of producing sputter film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1212783A JPS59138303A (en) | 1983-01-29 | 1983-01-29 | Method of producing sputter film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59138303A true JPS59138303A (en) | 1984-08-08 |
Family
ID=11796864
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1212783A Pending JPS59138303A (en) | 1983-01-29 | 1983-01-29 | Method of producing sputter film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59138303A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06330823A (en) * | 1993-04-30 | 1994-11-29 | Carl Freudenberg:Fa | Heating module of internal combustion engine |
-
1983
- 1983-01-29 JP JP1212783A patent/JPS59138303A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06330823A (en) * | 1993-04-30 | 1994-11-29 | Carl Freudenberg:Fa | Heating module of internal combustion engine |
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