JPS6395603A - Resistance thin film - Google Patents
Resistance thin filmInfo
- Publication number
- JPS6395603A JPS6395603A JP61242404A JP24240486A JPS6395603A JP S6395603 A JPS6395603 A JP S6395603A JP 61242404 A JP61242404 A JP 61242404A JP 24240486 A JP24240486 A JP 24240486A JP S6395603 A JPS6395603 A JP S6395603A
- Authority
- JP
- Japan
- Prior art keywords
- resistance
- thin film
- temperature coefficient
- small
- resistance thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 239000011651 chromium Substances 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 239000010408 film Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 229910018487 Ni—Cr Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- GZWXHPJXQLOTPB-UHFFFAOYSA-N [Si].[Ni].[Cr] Chemical compound [Si].[Ni].[Cr] GZWXHPJXQLOTPB-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- -1 nickel-chromium-aluminum Chemical compound 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Non-Adjustable Resistors (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、電子部品として使用される抵抗薄膜に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a resistive thin film used as an electronic component.
従来の技術
この種抵抗薄膜として具備すべき好ましい特性としては
、比抵抗が比較的大きいこと、安定性すなわち抵抗値の
経時変化が小さいこと、抵抗温度係数が小さいこと、ま
た抵抗温度係数の経時変化が小さいこと等の種々にわた
る特性が要求される。Prior Art The desirable characteristics that this type of resistive thin film should have are a relatively high specific resistance, stability, that is, a small change in resistance value over time, a small temperature coefficient of resistance, and a low change in temperature coefficient of resistance over time. A wide variety of characteristics are required, such as a small value.
従来、抵抗薄膜はスパッタリングや電子ビーム蒸着、抵
抗加熱蒸着等により、基体上に被着することにより作ら
れている。そして、薄膜材料としては、窒化タンタル（
Ｔａｇ）、窒化チタン（Ｔｉｅ）やニッケルークローム
（Ｎｉ−Ｏｒ）合金、ニッケルークローム−アルミニウ
ム（Ｎ ｉ −Ｏｒ−人ｌ）合金、ニッケルークローム
−硅素（Ｎｉ−Ｏｒ−３ｉ）合金等が実用化されている
。Conventionally, resistive thin films have been made by depositing them on a substrate by sputtering, electron beam evaporation, resistance heating evaporation, or the like. As a thin film material, tantalum nitride (
Tag), titanium nitride (Tie), nickel-chromium (Ni-Or) alloy, nickel-chromium-aluminum (Ni-Or-1) alloy, nickel-chromium-silicon (Ni-Or-3i) alloy, etc. It has been put into practical use.
発明が解決しようとする問題点
しかし、ＴｉＮやＴａＮは微量のＮ２ ガスを導入する
反応性着膜を必要とするため、制御が難かしく、再現性
が得にくい。またＴａはレアメタルであり、産地が偏在
しておシ原料価格が不安定でコストダウンの障害となっ
ている。Problems to be Solved by the Invention However, since TiN and TaN require reactive deposition by introducing a small amount of N2 gas, control is difficult and reproducibility is difficult to obtain. Furthermore, Ta is a rare metal, and its production areas are unevenly distributed, making the raw material price unstable, which is an obstacle to cost reduction.
Ｎ ｉ −Ｏｒは比抵抗が小さい。その酸化皮膜は緻密
で耐熱性、耐薬品性とも優れてはいるが、その抵抗温度
係数は１００〜１ｒｓ ｏ ｐｐｍ／’Ｃと大きい。N i -Or has a low specific resistance. Although the oxide film is dense and has excellent heat resistance and chemical resistance, its temperature coefficient of resistance is as large as 100 to 1 rso ppm/'C.
さらにＮｉ−０ｒ−８ｉ、Ｎｉ−０ｒ−人ｌは比抵抗が
小さいが、緻密で耐熱性、耐薬品性に富み、抵抗温度係
数も小さい。しかしＡｌもしくはＳｌ量が最適条件から
少しでも外れると抵抗温度係数は大きくなるだめ、人ｌ
もしくはＳｉの微妙な量の加減が必要である。Furthermore, although Ni-0r-8i and Ni-0r-8i have a low specific resistance, they are dense, have high heat resistance and chemical resistance, and have a small temperature coefficient of resistance. However, if the amount of Al or Sl deviates even slightly from the optimum conditions, the temperature coefficient of resistance will increase.
Alternatively, it is necessary to slightly adjust the amount of Si.
本発明は、上記のような点に鑑みてなされたものであり
、これらの特性を満足し、かつ安価にして安定的に抵抗
薄膜を提供することを目的とする。The present invention has been made in view of the above points, and it is an object of the present invention to stably provide a resistive thin film that satisfies these characteristics and is inexpensive.
問題点を解決するだめの手段
この問題点を解決するために本発明は、抵抗体の組成を
、Ｍｉ、Ｃｒ、ＡｌおよびＳｉＯとＳｉＯ２の混合物よ
り構成して薄膜を形成するものである。Means for Solving the Problem In order to solve this problem, the present invention forms a thin film of a resistor composed of Mi, Cr, Al, and a mixture of SiO and SiO2.
作用
この構成になる組成を有した抵抗薄膜は、比抵抗が大き
く、抵抗値の経時変化が小さく、また抵抗温度係数は比
較的小さく、抵抗温度係数の経時変化は小さい等の特性
上の優位性をもつ。まだ、資源的にも供給の心配の小さ
い材料を使用している点、着膜が容易な点など、安価に
して安定的に抵抗薄膜をつくることができる。Function: A resistive thin film with this composition has superior characteristics such as a high specific resistance, a small change in resistance value over time, a relatively small temperature coefficient of resistance, and a small change in temperature coefficient of resistance over time. have. Still, resistive thin films can be produced stably at low cost because they use materials whose supply is not a concern in terms of resources and because they are easy to deposit.
実施例
まず、アルミナ基板に電子ビーム法により、１ノハース
にＮ１−Ｃｒ−ＡＪ、２のハースにＳｉｎ、ＳｉＯ２の
混合物を入れ、これを同時に蒸発して着膜した。EXAMPLE First, a mixture of N1-Cr-AJ in one hearth and Sin and SiO2 in two hearths was placed on an alumina substrate by an electron beam method, and these were simultaneously evaporated to form a film.
この時の各成分の比率は下記の表１に示す通りである。The ratio of each component at this time is as shown in Table 1 below.
次いで着膜された基体にＯｒ、Ａｕを着膜しエツチング
により抵抗体部と導体部を作成する。次に抵抗体部両端
の導体部にリード線を接続し、試料とした。この試料の
抵抗温度係数、比抵抗を各１０個の平均値で調べた結果
を下記の表２に示す。また表２には参考として、Ｎ ｉ
−Ｏｒを用い、上記と同一条件で作成した試料の特性
値を併せて示している。Next, Or and Au are deposited on the substrate, and etched to form a resistor portion and a conductor portion. Next, lead wires were connected to the conductor parts at both ends of the resistor part, and a sample was prepared. The temperature coefficient of resistance and specific resistance of this sample were investigated using the average values of 10 samples each, and the results are shown in Table 2 below. Table 2 also shows N i
The characteristic values of a sample prepared using -Or under the same conditions as above are also shown.
さらに温度２５℃で、電力１．３Ｗを１．３ ｍ５ｅｃ
印加し、０．７ ｍ５ｅｏ切るということをくりかえす
負荷寿命試験（発熱部＝抵抗体部は空中にあり何物にも
接触していない）を行なったところ、図に示すような結
果を得だ。それぞれ実施例１による特性ａ、参考例（Ｎ
ｉ−Ｏｒ）による特性すを比較したものである。Further, at a temperature of 25℃, power of 1.3W is 1.3 m5ec
When we conducted a load life test (the heat generating part = resistor part is in the air and not in contact with anything) by repeatedly applying a voltage and cutting 0.7 m5eo, we obtained the results shown in the figure. Characteristic a according to Example 1, reference example (N
This is a comparison of the characteristics according to i-Or).
（以下余 白） 以上のように本発明によれば、Ｎｉ、Ｏｒ、Ａｌ。(Left below) As described above, according to the present invention, Ni, Or, and Al.
ＳｉＯ，５ｉ０２ を組成とする抵抗薄膜は、機械的
性能として、■表面は緻密で硬く、■耐熱性、耐薬品性
に富んでいる。また電気的性能として、■比抵抗が大き
く、■抵抗温度係数が比較的小さく、まだ１×１０サイ
クルの負荷寿命試験においても、抵抗値変化率が小さく
、抵抗温度係数変化率が小さいという特徴を有し、本発
明の抵抗薄膜が長期使用状態においても安定であり、寿
命的にも効果のあることがわかる。また生産上の観点か
ら、■組成が多少ズしても抵抗温度係数には大きな差が
生じない、■反応性着膜でなく着膜できるので制御もむ
づかしくない等作りやすい膜ということができる。A resistive thin film composed of SiO,5i02 has mechanical properties such as (1) a dense and hard surface, and (2) excellent heat resistance and chemical resistance. In addition, in terms of electrical performance, it has the following characteristics: (1) high specific resistance, (2) relatively small resistance temperature coefficient, and even in a 1×10 cycle load life test, the resistance value change rate is small and the resistance temperature coefficient change rate is small. It can be seen that the resistive thin film of the present invention is stable even in long-term use and is effective in terms of longevity. In addition, from a production point of view, the film is easy to produce, such as (1) there is no big difference in the temperature coefficient of resistance even if the composition changes a little, and (2) it is not difficult to control because it is not a reactive film. can.
発明の効果
以上のように本発明の抵抗薄膜は、各種の特性において
良好な値を示し、かつ安価にして、安定的に製造するこ
とができ、その産業性は大なるものがある。Effects of the Invention As described above, the resistive thin film of the present invention exhibits good values in various properties, can be manufactured stably at low cost, and has great industrial efficiency.
図は本発明品と従来品による負荷寿命試験結果を比較し
て示す特性図である。The figure is a characteristic diagram showing a comparison of the load life test results of the product of the present invention and the conventional product.
Claims (1)
二酸化硅素からなることを特徴とする抵抗薄膜。A resistive thin film comprising nickel, chromium, aluminum, silicon monoxide and silicon dioxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61242404A JPS6395603A (en) | 1986-10-13 | 1986-10-13 | Resistance thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61242404A JPS6395603A (en) | 1986-10-13 | 1986-10-13 | Resistance thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6395603A true JPS6395603A (en) | 1988-04-26 |
Family
ID=17088635
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61242404A Pending JPS6395603A (en) | 1986-10-13 | 1986-10-13 | Resistance thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6395603A (en) |
-
1986
- 1986-10-13 JP JP61242404A patent/JPS6395603A/en active Pending
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