JPS5845163B2 - How to make resistors - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention provides a film that has a nickel-based film that has a nearly linear resistance value against temperature changes, which has recently been used for temperature correction, thermal protection, and various temperature controls in electronic circuits. The present invention relates to a method of manufacturing a resistor, which was invented for the purpose of increasing the temperature coefficient of a resistor called a temperature-sensitive resistor, which has a tautic change.

Traditionally, this type of film has nickel as its main component, and the temperature coefficient has been adjusted according to changes in the type and amount of impurities such as chromium and cobalt. /°C or higher) and a film temperature-sensitive resistor with a large resistance value has become increasingly desirable.

Therefore, for the purpose of increasing the temperature coefficient, we coated the substrate with an electroless plating film several microns thick (
The resistance value at this time is 0.1 to 0.50.

), high-temperature aging at 250°C or higher has been performed to increase the temperature coefficient.

However, with this method alone, even if the temperature coefficient is large, the resistance value can only be increased to a maximum of several "-Ω" in the grooved state, and the demand has not been met until now.

The present invention provides a method of using a thin film formed by vacuum deposition or sputtering to obtain a high resistance film and also increasing the temperature coefficient.

An embodiment of the present invention will be described along with a conventional example for reference.

In order to increase the temperature coefficient on the base (ceramic), the present invention resists nickel of different purity (it is well known that if the purity is high, the temperature coefficient of the coating approaches that of the nickel wire even if it is a thin film). A nickel film with a thickness of several hundred angstroms or less was produced by heated vacuum deposition or sputtering.

The resistance value in this case was 2-100.

The purity of the nickel used at that time is as shown in the table below; sample A is commercially available nickel with poor purity, and sample B is expensive nickel specially produced to increase the purity of nickel.

Similarly, in the above table, a film was formed using vacuum evaporation,
It shows the temperature coefficient when used as a temperature sensitive resistor without aging.

Figure 1 shows an abbreviation of the humidity-sensitive resistor, where 1 is the base (
(ceramic), 2 is a film mainly composed of nickel, 3 is a metal cap, and 4 is a lead wire.

Here, we use the desired 3900p for high purity nickel.
pm/°C, but since the manufacturing cost of this material is higher than that of ordinary nickel, it is advantageous for industry E to use nickel, which is a component of sample A, as much as possible.

Therefore, an attempt was made to increase the temperature coefficient by using nickel as component A and aging the film formed on the substrate at 250°C or higher, but the temperature coefficient increased as shown in Figure 2 (solid line A- ), but as the temperature coefficient increases, the resistance value increases dramatically as shown by the broken line B, and in some cases the resistance value becomes infinite.

This is because nickel deteriorates due to oxidation, etc., and if a film deteriorated due to oxidation or the like is used in a temperature-sensitive resistor, the electrical characteristics of this resistor will deteriorate extremely.

Therefore, as shown in the present invention, silicon oxide (Sin), which has conventionally been used to protect the mechanical strength of general resistor films, is formed on the surface of the nickel film by vacuum deposition, and then
When thermal aging is performed at 0° C. or higher, the temperature coefficient can be increased without causing deterioration such as oxidation of the film due to aging.

The film formed on the substrate at this time is shown in FIG. 3, where 5 is the substrate, 6 is a film mainly composed of nickel, and γ is a silicon oxide film.

Using this element (initial resistance before grooving is 2 to 10Ω), a temperature-sensitive resistor as shown in Fig. I got something like this.

As an application of the present invention, if the high-purity nickel of sample H is used as a film and the unexploded surface method is used, it is possible to obtain a temperature coefficient even larger than that of sample A with poor purity, as shown in Figure 4. .

The broken line shows the resistance value, and the solid line shows the temperature coefficient.

The aging time at this time was 3 hours.

Further, if the aging atmosphere is not an oxidizing atmosphere but a non-oxidizing gas such as nitrogen gas, the increase in resistance value can be further prevented as shown in FIG.

Here, the solid line shows the case in an oxidizing atmosphere, and the broken line shows the case in a non-oxidizing atmosphere.

As described above, by using the present invention, it is possible to increase the temperature coefficient with high resistance without deteriorating the film, and it is also possible to do this with ordinary commercially available nickel.

Further, if nickel of particularly high purity is used, it becomes easier to manufacture a thin film type temperature sensitive resistor having an even larger temperature coefficient.

This makes thermal protection and temperature compensation of electronic circuits easier, and is of great value from an industrial perspective.

[Brief explanation of the drawing]

Fig. 1 is a half-sectional front view of a conventional temperature-sensitive resistor, Fig. 2 is a diagram showing changes in temperature coefficient and resistance increase rate with respect to aging temperature to explain the conventional method, and Fig. 3 is a diagram of the present invention. Cross-sectional view of the main parts of the temperature-sensitive resistor obtained by the method, No. 4
The figure is a diagram showing changes in temperature coefficient and resistance increase rate with respect to aging temperature for explaining the present invention, and Fig. 5 is a diagram showing changes in temperature coefficient and resistance increase rate with respect to aging temperature for explaining the present invention.
FIG. 3 is a diagram showing changes in resistance value vs. rate of increase with respect to aging temperature when performed in a non-oxidizing atmosphere. 5...Substrate, 6...Nickel main component film, 7...Silicon oxide film.

Claims (1)

[Claims] 1. A film containing nickel as a main component is formed on a substrate, silicon oxide is formed on the film, and 3000p prrv is produced by aging at a temperature of 250°C or higher.
``A method for manufacturing a resistor, characterized by obtaining a resistor having a temperature coefficient of C or more.