JPS6395601A - Resistance thin film - Google Patents
Resistance thin filmInfo
- Publication number
- JPS6395601A JPS6395601A JP61242402A JP24240286A JPS6395601A JP S6395601 A JPS6395601 A JP S6395601A JP 61242402 A JP61242402 A JP 61242402A JP 24240286 A JP24240286 A JP 24240286A JP S6395601 A JPS6395601 A JP S6395601A
- Authority
- JP
- Japan
- Prior art keywords
- resistance
- thin film
- temperature coefficient
- small
- nickel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229940024548 aluminum oxide Drugs 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 239000011651 chromium Substances 0.000 claims description 2
- 229940090961 chromium dioxide Drugs 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229940073644 nickel Drugs 0.000 claims description 2
- 229960001866 silicon dioxide Drugs 0.000 claims description 2
- 239000010408 film Substances 0.000 description 6
- 229910018487 Ni—Cr Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- -1 nickel-chromium-aluminum Chemical compound 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- GZWXHPJXQLOTPB-UHFFFAOYSA-N [Si].[Ni].[Cr] Chemical compound [Si].[Ni].[Cr] GZWXHPJXQLOTPB-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Non-Adjustable Resistors (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、電子部品として使用される抵抗薄膜に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a resistive thin film used as an electronic component.
従来の技術
この種抵抗薄膜として具備すべき好ましい特性としては
、比抵抗が比較的大きいこと、安定性すなわち抵抗値の
経時変化が小さいこと、抵抗温度係数が小さいこと、ま
た抵抗温度係数の経時変化が小さいこと等の種々にわた
る特性が要求される。Prior Art The desirable characteristics that this type of resistive thin film should have are a relatively high specific resistance, stability, that is, a small change in resistance value over time, a small temperature coefficient of resistance, and a low change in temperature coefficient of resistance over time. A wide variety of characteristics are required, such as a small value.
従来、抵抗薄膜はスパッタリングや電子ビーム蒸着、抵
抗加熱蒸着等により、基体上に被着することにより作ら
れている。そして、薄膜材料としては、窒化タンタル（
ＴａＮ）、窒化チタン（Ｔｉｅ）やニッケルークローム
（Ｎｉ−Ｃｒ）合金、ニッケルークローム−アルミニウ
ム（Ｎｉ−０ｒ −Ａｌ ）合金、ニッケルークローム
−硅素（Ｎｉ −０ｒ−８ｉ）合金等が実用化されてい
る。Conventionally, resistive thin films have been made by depositing them on a substrate by sputtering, electron beam evaporation, resistance heating evaporation, or the like. As a thin film material, tantalum nitride (
Practical use of titanium nitride (Tie), nickel-chromium (Ni-Cr) alloy, nickel-chromium-aluminum (Ni-0r-Al) alloy, nickel-chromium-silicon (Ni-0r-8i) alloy, etc. has been done.
発明が解決しようとする問題点
しかし、ＴｉＮやＴａＮは微量のＮ２ガスを導入する反
応性着膜を必要とするため、制御が難かしく、再現性が
得にくい。またＴａはレアメタルであり、産地が偏在し
ており、原料価格が不安定でコストダウンの障害となっ
ている。Problems to be Solved by the Invention However, since TiN and TaN require reactive film deposition in which a small amount of N2 gas is introduced, control is difficult and reproducibility is difficult to obtain. Furthermore, Ta is a rare metal, its production areas are unevenly distributed, and raw material prices are unstable, which is an obstacle to cost reduction.
Ｎｉ−０ｒは比抵抗が小さい。その酸化皮膜は緻密で耐
熱性、耐薬品性とも優れてはいるが、その抵抗温度係数
は１ｏＯ〜１ｓ ｏ ｐｐｍ ／Ｃと大きい。Ni-0r has a low specific resistance. The oxide film is dense and has excellent heat resistance and chemical resistance, but its temperature coefficient of resistance is as large as 1 oO to 1 so ppm/C.
さらにＮｉ −Ｏｒ −８ｉ 、 Ｎｉ −０ｒ−４１
は比抵抗が小さいが、緻密で耐熱性、耐薬品性に富み、
抵抗温度係数も小さい。しかじ人ｅもしくはＳｉ量が最
適条件から少しでも外れると抵抗温度係数は大きくなる
ため、人ｅもしくはＳｌの微妙な量の加減が必要である
。Furthermore, Ni-Or-8i, Ni-0r-41
has a low specific resistance, but is dense, heat resistant, and chemical resistant.
The temperature coefficient of resistance is also small. However, if the amount of Si or the amount of Si deviates even slightly from the optimum conditions, the temperature coefficient of resistance increases, so it is necessary to delicately adjust the amount of E or Si.
本発明は、上記のような点に鑑みてなされだものであり
、これらの特性を満足し、かつ安価にして安定的に抵抗
薄膜を提供することを目的とする。The present invention has been made in view of the above points, and aims to provide a stable resistive thin film that satisfies these characteristics and is inexpensive.
問題点を解決するだめの手段
この問題点を解決するために本発明は、抵抗体の組成を
、ニッケル、クローム、アルミニウムおよび二酸化硅素
より構成して薄膜を形成するものである。Means for Solving the Problem In order to solve this problem, the present invention forms a thin film of a resistor composed of nickel, chromium, aluminum and silicon dioxide.
作用
この構成になる組成を有した抵抗薄膜は、比抵抗が大き
く、抵抗値の経時変化が小さく、まだ抵抗温度係数は比
較的小さく、抵抗温度係数の経時変化は小さい等の特性
上の優位性をもつ。まだ、資源的にも供給の心配の小な
い材料を使用している点、着膜が容易な点など、安価に
して安定的に抵抗薄膜をつくることができる。Function: A resistive thin film with this composition has superior properties such as high specific resistance, small change in resistance value over time, relatively small temperature coefficient of resistance, and small change in temperature coefficient of resistance over time. have. However, it is possible to stably produce a resistive thin film at low cost because it uses materials whose supply is not a concern in terms of resources, and it is easy to deposit the film.
実施例
まず、アルミナ基板に電子ビーム法により、２つのハー
スにいれたニッケルークローム−アルミニウムと二酸化
硅素を同時に蒸発して着膜した。Example First, nickel-chromium-aluminum and silicon dioxide, which were placed in two hearths, were simultaneously evaporated and deposited on an alumina substrate by an electron beam method.
この時の各成分の比率は下記の表１に示す通りである。The ratio of each component at this time is as shown in Table 1 below.
次いで着膜された基体にＯｒ、 Ａｕを着膜し、エツチ
ングにより抵抗体部と導体部を作成する。次に抵抗体部
両端の導体部にリード線を接続し、試料とした。この試
料の抵抗温度係数、比抵抗を各１０個の平均値で調べた
結果を下記の表２に示す。Next, a film of Or or Au is deposited on the substrate, and a resistor part and a conductor part are created by etching. Next, lead wires were connected to the conductor parts at both ends of the resistor part, and a sample was prepared. The temperature coefficient of resistance and specific resistance of this sample were investigated using the average values of 10 samples each, and the results are shown in Table 2 below.
また表２には、参考として、ニッケルークロームを用い
、上記と同一条件で作成した試料の特性値を併せて示し
ている。Table 2 also shows, as a reference, the characteristic values of samples prepared under the same conditions as above using nickel-chromium.
さらに温度２６℃で、電力１．３Ｗを１ 、３ ｍ５ｅ
ｏ。Furthermore, at a temperature of 26°C, power of 1.3W is applied to 1.3 m5e.
o.
印加し、０．７ｍ５ｅｃ、 切るということをくりか
えす負荷寿命試験（発熱部＝抵抗体部は空中にあり何物
にも接触していない）を行なったところ、図に示すよう
な結果を得た。それぞれ実施例１による特性ａ１参考例
にニッケルークローム）による特性すを比較したもので
ある。When we conducted a load life test in which the power was applied for 0.7 m5ec and the power was turned off repeatedly (the heat generating part = resistor part was in the air and not in contact with anything), we obtained the results shown in the figure. The characteristics a1 according to Example 1, the characteristics according to the reference example and the characteristics according to nickel-chrome) are compared.
（以下余白）
表１
表２
以上のように本発明によれば、ニッケルークローム−ア
ルミニウムおよび二酸化硅素を組成とする抵抗薄膜は、
機械的性能として、■表面は緻密で硬く、■耐熱性、耐
薬品性に富んでいる。また電気的性能として、■比抵抗
が大きく、■抵抗温度係数が比較的小さく、マた１×１
ｏサイクルの負荷寿命試験においても抵抗値変化率が小
さく、抵抗温度係数変化率が小さいという特徴を有し、
本発明の抵抗薄膜が長期使用状態においても安定であり
、寿命的にも効果のあることがわかる。また、生産上の
観点から、■組成が多少ズしても抵抗温度係数には犬さ
な差が生じない、■反応性着膜でなく着膜できるので制
御もむずかしくない等作りやすい膜ということができる
。(The following are blank spaces) Table 1 Table 2 As described above, according to the present invention, the resistive thin film whose composition is nickel-chromium-aluminum and silicon dioxide is
In terms of mechanical performance, ■The surface is dense and hard, and ■It has excellent heat resistance and chemical resistance. In addition, in terms of electrical performance, ■high specific resistance; ■relatively small temperature coefficient of resistance;
It has the characteristics of a small resistance value change rate and a small resistance temperature coefficient change rate even in an o-cycle load life test.
It can be seen that the resistive thin film of the present invention is stable even in long-term use and is effective in terms of longevity. In addition, from a production point of view, ① there is no small difference in the temperature coefficient of resistance even if the composition changes a little, ② It is an easy-to-manufacture film that is not difficult to control because it is not a reactive film but can be deposited. Can be done.
発明の効果
以上のように本発明の抵抗薄膜は、各種の特性において
良好な値を示し、かつ安価にして、安定的に製造するこ
とができ、その産業性は犬なるものがある。Effects of the Invention As described above, the resistive thin film of the present invention exhibits good values in various properties, can be manufactured stably at low cost, and has excellent industrial efficiency.
図は本発明品と従来品による負荷寿命試験結果を比較し
て示す特性図である。The figure is a characteristic diagram showing a comparison of the load life test results of the product of the present invention and the conventional product.
Claims (1)
らなることを特徴とする抵抗薄膜。A resistive thin film characterized by being composed of nickel, chromium, aluminum and silicon dioxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61242402A JPS6395601A (en) | 1986-10-13 | 1986-10-13 | Resistance thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61242402A JPS6395601A (en) | 1986-10-13 | 1986-10-13 | Resistance thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6395601A true JPS6395601A (en) | 1988-04-26 |
Family
ID=17088608
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61242402A Pending JPS6395601A (en) | 1986-10-13 | 1986-10-13 | Resistance thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6395601A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63147305A (en) * | 1986-12-11 | 1988-06-20 | Tdk Corp | Metal thin-film resistor |
| JP2007027299A (en) * | 2005-07-14 | 2007-02-01 | Matsushita Electric Ind Co Ltd | Thin-film resistor, electronic component using the same, and its manufacturing method |
-
1986
- 1986-10-13 JP JP61242402A patent/JPS6395601A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63147305A (en) * | 1986-12-11 | 1988-06-20 | Tdk Corp | Metal thin-film resistor |
| JP2007027299A (en) * | 2005-07-14 | 2007-02-01 | Matsushita Electric Ind Co Ltd | Thin-film resistor, electronic component using the same, and its manufacturing method |
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