JPS6018122B2 - resistive thin film - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a resistive thin film used as an electronic component.

The desirable characteristics that this type of resistive thin film should have include a relatively large sheet resistance, stability, that is, small change in resistance value over time, and a small temperature coefficient of resistance.
In addition, various characteristics are required, such as a low temperature coefficient with little change over time, a current noise of 4 ins, and a large nonlinearity (third harmonic).

Furthermore, in recent years, the center value for this low resistance temperature coefficient has increased from 0 to
Demand for smaller rice bowls such as 2 paddy plates/℃ is increasing from the market. It is an object of the present invention to provide a stable resistive thin film that satisfies these characteristics and is inexpensive. Conventionally, resistive thin films have been produced by sputtering, electron beam evaporation,
It is made by being ruptured onto a substrate by resistance heating vapor deposition or the like.

As the thin film member, tantalum nitride (TaN),
Titanium nitride (TIN) and nickel-chrome (Ni-C)
r) alloy, nickel-chrome aluminum (Ni-C) alloy, nickel-chrome silicon (N
i-Cr-Si) alloys and the like have been put into practical use. but,
Since reactive film deposition is required, in which a TIN or Tan'-like amount of N2 gas is introduced, control is difficult and reproducibility is difficult to obtain. Further, Ni-Cr has a high specific resistance, and its oxide film is delicate and has excellent heat resistance and chemical resistance, but its low temperature resistance coefficient is as large as 100 to 15Q blood/°C. Furthermore, N
I-Cr-A and Ni-Cr-Si are delicate, have high heat resistance and chemical resistance, and have a small low temperature coefficient of resistance, but if the amount of A or Si deviates even slightly from the optimum conditions, the low temperature coefficient of resistance will decrease. As the resistance increases, it is necessary to delicately adjust the amount of Si, and advanced manufacturing technology is required to stably and continuously produce a small resistive thin film with a low temperature coefficient of resistance. The present invention has been made in view of the above points, and embodiments thereof will be described in detail below.

First, nickel (Ni) was deposited on an alumina cylindrical base from an alloy target using the DC magnetron sputtering method.
), chromium (Cr), aluminum (A), and yttrium (Y) are sputtered.

The ratio of each component at this time is as shown in Table 1 below.
Next, the coated substrate was placed in a 0 heating furnace and heated in air for 4 hours.
Heat treatment was performed at 00°C for 1 hour. Caps with lead wires were caulked onto both ends of the film-coated substrate thus obtained, and used as a sample. The low temperature coefficient and specific resistance of this sample are
The results of the investigation using the average value of q hardness are shown in Table 2 below. Also,
Table 2 also shows the characteristic values of samples prepared under the same conditions as above using nickel and chromium as a reference. Note that the low resistance temperature coefficient was measured between 125°C and 175°C. <Table 1><Table2> As shown in the above table, Examples 1 to 4 according to the present invention and the reference example are significantly different in low temperature coefficient of resistance.

In addition, Ni-Cr-A excluding yttrium, in that case,
A: When the ratio is changed by about 0.7 to 6, the low temperature coefficient changes by about 20 to 3 blood/℃. In this way, nickel,
The resistive thin film made of chromium, aluminum, and yttrium has a small low temperature coefficient of resistance, and even if the ratio of some components changes, the value of the low temperature coefficient of resistance remains stable, so the ratio must be adjusted slightly during manufacturing. It is possible to obtain the desired resistive thin film relatively easily without having to do so.

In addition, the current noise is 0.04 μV with a completed resistance value of 100KQ.
The third harmonic index was about 10V and about 13B, showing good characteristics JO. Furthermore, at a temperature of 125q0, the rated power (example 1/4W) is set to 1. When a load life test was conducted in which the load was applied repeatedly for 30 minutes and then turned off for 30 minutes, the results shown in the figure were obtained. Each of the products of the present invention (Ni:C
Characteristic a due to r:Aso:Y=80:20:3:0.7)
, characteristic b of a conventional product (Ni:Cr:A=80:20:3), and characteristic C of a conventional product (Ni:Cr=80:20). From the figure, it can be seen that the resistive thin film of the present invention is stable even in long-term use after undergoing an accelerated test of 200 q hours, and is effective in terms of longevity. As described above, the resistive thin film of the present invention exhibits good values in various properties, can be manufactured stably at low cost, and has great industrial efficiency.

A simple explanatory diagram of the data diagram is a diagram showing a comparison of the load life test results of the product of the present invention and the conventional product.

Claims (1)

[Claims] 1. A resistive thin film characterized by being composed of nickel, chrome, aluminum and yttrium.