JPS5822379A - Target for sputtering - Google Patents
Target for sputteringInfo
- Publication number
- JPS5822379A JPS5822379A JP11983781A JP11983781A JPS5822379A JP S5822379 A JPS5822379 A JP S5822379A JP 11983781 A JP11983781 A JP 11983781A JP 11983781 A JP11983781 A JP 11983781A JP S5822379 A JPS5822379 A JP S5822379A
- Authority
- JP
- Japan
- Prior art keywords
- target
- thin film
- sputtering
- film resistor
- weight
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、スノくツタリングに使用するターゲット（薄
膜抵抗材料）の改良に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an improvement of a target (thin film resistance material) used for snow climbing.
近年、電子工業の飛躍的な発展に伴って抵抗器の電気的
特性に対する要求も次第に厳し−１ものとなり、蒸着方
式によるニクロム系薄膜抵抗体やスパッタリング方式に
よる窒化メンタル薄膜抵抗体が開発され実用化されてき
た。しかし、抵抗値の安定度や電気的特性の再現性を得
るための厳密な製造管理の点において、なお問題カーあ
った。In recent years, with the rapid development of the electronics industry, the requirements for the electrical characteristics of resistors have become increasingly strict, and nichrome thin film resistors made by vapor deposition and nitride mental thin film resistors made by sputtering were developed and put into practical use. It has been. However, there were still problems in terms of strict manufacturing control to obtain stability of resistance values and reproducibility of electrical characteristics.
一方、マクネトロン・スノ（ツタ装置カー、その実用化
に伴りてスノくツタ・レート（速度）カを増加し、薄膜
抵抗体の着膜装置として実用に供されるまで釦なってい
る。スパッタリング方式は、着膜後の薄膜の組成比の再
現性に問題のある蒸着方式に比べて、薄膜の組成の制御
が非常に容易であるという利点がある。On the other hand, with the commercialization of the McNetron Suno (Ivy device), the Sunoki Tsuta rate (speed) was increased, and it became a button until it was put into practical use as a film deposition device for thin film resistors. Sputtering This method has the advantage that the composition of the thin film can be controlled much more easily than the vapor deposition method, which has problems with reproducibility of the composition ratio of the thin film after deposition.
本発明は、上述の諸点に鑑み、抵抗値の安定度において
優れ電気的特性の調整が容易なスパッタリング用ターゲ
ットを提供しようとするものである。本発明のターゲッ
トは、ニッケルとクロムの成分比率が３：２から２：３
までのニッケルクロム合金にシリコンを１．５〜５．０
重量％、アルきニエームを２．５〜８．０重量寓添加し
たもので、上記の数値範囲内で従来のものより優れた特
性が得られることを確認した。本発明のターゲットは、
従来の窒化タンタル薄膜抵抗体を製作する際のスパッタ
リング条件を維持しなくてもその影響が少なく、条件の
１づであるガス圧は、単に放電を維持すればよく窒化タ
ンタルの場合のように微妙な調整を必要としない。また
、電気的特性も、着膜後加熱処理を施すことによって抵
抗温度係数を調整することが可能であり、同時に、薄膜
抵抗体の安定度をも著しく向上させ、従来の蒸着方式に
よるニクロム系薄膜抵抗体やスパッタリング方式による
窒化タンタル薄膜抵抗体をしのいでいる。以下、図面に
より本発明を具体的に説明する。In view of the above-mentioned points, the present invention aims to provide a sputtering target which has excellent resistance value stability and whose electrical characteristics can be easily adjusted. The target of the present invention has a nickel and chromium component ratio of 3:2 to 2:3.
Silicon to nickel chromium alloy up to 1.5~5.0
It was confirmed that by adding 2.5 to 8.0% by weight of alkyleneme, superior properties than conventional products could be obtained within the above numerical range. The target of the present invention is
There is little effect even if sputtering conditions are not maintained when manufacturing conventional tantalum nitride thin film resistors, and the first condition, gas pressure, is fine as in the case of tantalum nitride, where it is sufficient to simply maintain discharge. No adjustment required. In addition, regarding the electrical properties, the temperature coefficient of resistance can be adjusted by applying heat treatment after film deposition, and at the same time, the stability of the thin film resistor can be significantly improved. It outperforms resistors and tantalum nitride thin film resistors made by sputtering. Hereinafter, the present invention will be specifically explained with reference to the drawings.
第１図は、ニクロム系合金ＫＲする従来のターゲットと
本発明のターゲットとをスパッタリング方式により絶縁
基体に着膜させた場合の、それぞれの薄膜抵抗体の面積
抵抗値と抵抗温度係数の関係を示″ｆ特性曲線図である
。図から判るように、本発明のターゲットを用いた薄膜
抵抗体は、広い抵抗値範囲に亘って抵抗温度係数が負又
は正の小さい値を示している。本発明の代表的な３つの
実施例については、後で説明する。Figure 1 shows the relationship between the sheet resistance value and the temperature coefficient of resistance of each thin film resistor when a conventional target made of nichrome alloy KR and the target of the present invention are deposited on an insulating substrate by sputtering. FIG. 2 is a diagram of the "f characteristic curve. As can be seen from the figure, the thin film resistor using the target of the present invention exhibits a small negative or positive temperature coefficient of resistance over a wide resistance value range. Three representative examples will be described later.
９２図は、上述の薄膜抵抗器の無負荷、１５０Ｃにおけ
る加速寿命試験結果を示すもので、これより、本発明の
寿命（抵抗値変化率）は、ニッケルクロム合金のみ及び
ニッケルクロム合金にシリコン又はアルミニュームを単
独で添加した材料に比べ遥かに優れていることが判る。Figure 92 shows the results of an accelerated life test at 150C under no load for the above-mentioned thin film resistor.From this, the life (resistance change rate) of the present invention is determined by the nickel-chromium alloy alone and the nickel-chromium alloy with silicon or It can be seen that this material is far superior to materials to which aluminum is added alone.
因みに、蒸着方式によるニクロム系薄膜抵抗器は第２図
中のＮｉＣｒ８ｉ化タンタル薄膜抵抗器はＮ１ＣｒＡＪ
の却命特性とほぼ近似の寿命特性である。Incidentally, the nichrome thin film resistor made by vapor deposition is N1CrAJ, and the NiCr8i tantalum thin film resistor in Figure 2 is N1CrAJ.
This is a lifespan characteristic that is almost similar to the lifespan characteristic of .
次に、本発明の詳細な説明する。Next, the present invention will be explained in detail.
下記の実施例においては、着膜装置として市販のバレル
・コーチインク式マグネトロン・スパッタ装置を用い、
膜組成の変更は、ニッケルクロム合金板にシリコン及び
アルミニューム板を埋込み又は貼着により装着し、その
鉄層面積比を変えて実験した結果に基き、最終的に溶層
法で所望の組成の合金板を作製してターゲットとするこ
とにより行なったが、両者の間には、着膜した膜の組成
比に差が殆ど昭められなかった。In the following examples, a commercially available barrel coach ink type magnetron sputtering device was used as the film deposition device.
The change in film composition was based on the results of experiments in which silicon and aluminum plates were embedded or attached to a nickel-chromium alloy plate, and the iron layer area ratio was changed.Finally, the desired composition was achieved using the molten layer method. This was carried out by preparing an alloy plate and using it as a target, but there was almost no difference in the composition ratio of the deposited film between the two.
実施例１
合金組成比がニッケル４８重量％、クロム４８重量％、
シリコン１．５重量％、アルミニューム２．５重量％の
ターゲットを、アルゴンガス圧１〜１０３
Ｘ １０ ｔｏｒｒ 、電力０．５〜３．５ＫＷでス
パッタリングして薄膜抵抗体を得た。その面積抵抗値と
抵抗温度係数の関係を示す特性曲線は、第１図の実施例
１のとおりであった。先にも述べた如く、本発明の４元
合金ターゲツトは、アルゴンガス圧及び着膜速度に抵抗
温度係数が全く影響されないため、ガス圧と電力は単に
所望の面積抵抗値が得られ易い値に設定するだけでよい
。Example 1 Alloy composition ratio is nickel 48% by weight, chromium 48% by weight,
A thin film resistor was obtained by sputtering a target containing 1.5% by weight of silicon and 2.5% by weight of aluminum at an argon gas pressure of 1 to 10 3 X 10 torr and a power of 0.5 to 3.5 KW. The characteristic curve showing the relationship between the sheet resistance value and the temperature coefficient of resistance was as shown in Example 1 in FIG. As mentioned earlier, in the quaternary alloy target of the present invention, the temperature coefficient of resistance is not affected at all by the argon gas pressure and the film deposition rate, so the gas pressure and electric power are simply set to values that make it easy to obtain the desired sheet resistance value. Just set it up.
実施例２
合金組成比がニッケル４５重量％、クロム４７重量％、
シリコン３重量％、アルミニューム５重量％のターゲッ
トを、実施例１のスノくツタリング条件と同一条件でス
パッタリングして薄膜抵抗体を得た。その面積抵抗値と
抵抗温度係数の特性曲線は、第１図の実施例２のとおり
であった。Example 2 Alloy composition ratio is nickel 45% by weight, chromium 47% by weight,
A thin film resistor was obtained by sputtering a target containing 3% by weight of silicon and 5% by weight of aluminum under the same conditions as the slatting conditions of Example 1. The characteristic curve of the sheet resistance value and the temperature coefficient of resistance was as shown in Example 2 in FIG.
第３図は、この薄膜抵抗体を空気中で熱処理をした場合
の熱処理温度と抵抗温度係数の関係を示す特性曲線図で
ある。この図から判るように、熱処理温度を高くすると
抵抗温度係数は正の方向に変化する傾向があり、適切な
熱処理条件で処理すれば、数オームから数百オームの広
い面積抵抗値範囲に亘って抵抗温度係数の絶対値を±５
ＰＰＭ／Ｃ内に入れることが可能である。FIG. 3 is a characteristic curve diagram showing the relationship between the heat treatment temperature and the temperature coefficient of resistance when this thin film resistor is heat treated in air. As can be seen from this figure, the resistance temperature coefficient tends to change in the positive direction as the heat treatment temperature is increased, and if the heat treatment is performed under appropriate heat treatment conditions, the resistance temperature coefficient will change over a wide range of areal resistance values from several ohms to several hundred ohms. Absolute value of resistance temperature coefficient ±5
It can be placed within PPM/C.
実施例３
合金組成比がニッケル４５重量％、クロム４３重量％、
シリコン５重量％、アルミニューム８重量Ｓのターゲッ
トを、実施例１のスパッタリング条件と同一条件でスパ
ッタリングして薄膜抵抗体を得た。その面積抵抗値と抵
抗温度係数の特性曲線は、第１図の実施例３のとおりで
あった。Example 3 Alloy composition ratio is nickel 45% by weight, chromium 43% by weight,
A thin film resistor was obtained by sputtering using a target of 5% by weight silicon and 8% by weight aluminum under the same sputtering conditions as in Example 1. The characteristic curve of the sheet resistance value and the temperature coefficient of resistance was as shown in Example 3 in FIG.
以上説明したとおり、本発明ターゲットによれば、抵抗
値が安定で電気的特性の再現性に優れた薄膜抵抗体を得
ることができるのみならず、従来例に比し厳密な製造管
理を必要としない利点がある。As explained above, according to the target of the present invention, it is possible not only to obtain a thin film resistor with a stable resistance value and excellent reproducibility of electrical characteristics, but also to require stricter manufacturing control than conventional examples. There are advantages to not doing so.
なお、上述の実施例においては本発明ターゲットを作る
のに溶解法により合金板を作製してターゲットとしたが
、ホットプレス法により合金板を作製してターゲットと
しても、何ら変わらない特性が得られることは勿論であ
る。In addition, in the above-mentioned example, to make the target of the present invention, an alloy plate was prepared by a melting method and used as a target, but the same characteristics can be obtained even if an alloy plate is prepared by a hot press method and used as a target. Of course.
第１図は、従来のターゲットと本発明のターゲットを用
いて得た薄膜抵抗体の面積抵抗値と抵抗温度係数の関係
を示す特性曲線図、第２図は、加速寿命試験における抵
抗値変化率と試験時間の関係を示″ｆ％性図、第３図は
、本発明ターゲットによって得た薄膜抵抗体の熱処理温
度と抵抗温度係数の関係を示す特性曲線図である。
第１図
一輯汰汎４（０ん）
第２図
ト
１
ｇ
元
イ。
書
（？Ｐ・
４ｆ！、％’Ｌ”Ａ＜’ｅ＞Figure 1 is a characteristic curve diagram showing the relationship between sheet resistance value and temperature coefficient of resistance of thin film resistors obtained using a conventional target and the target of the present invention, and Figure 2 is a diagram showing the rate of change in resistance value in an accelerated life test. Figure 3 is a characteristic curve diagram showing the relationship between heat treatment temperature and resistance temperature coefficient of a thin film resistor obtained using the target of the present invention. Pan 4 (0n) Figure 2 To 1 g Gen I. Book (?P・4f!, %'L"A<'e>
Claims (1)
のニッケルクロム合金にシリコンを１．５重量％から５
．０重量％、アルミニュームを２．５重量９６カ１ら８
．０重量お含有させたス／＜ツタリング用ターゲット。Silicon is added from 1.5% by weight to 5% by weight in a nickel-chromium alloy with a nickel to chromium component ratio of 3:2 to 2:3.
．． 0% by weight, 2.5% by weight of aluminum 96 kg 1 to 8
．． Target for Tsutaring that contains 0 weight.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11983781A JPS5822379A (en) | 1981-07-30 | 1981-07-30 | Target for sputtering |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11983781A JPS5822379A (en) | 1981-07-30 | 1981-07-30 | Target for sputtering |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5822379A true JPS5822379A (en) | 1983-02-09 |
Family
ID=14771478
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11983781A Pending JPS5822379A (en) | 1981-07-30 | 1981-07-30 | Target for sputtering |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5822379A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59157282A (en) * | 1983-02-24 | 1984-09-06 | Toyo Soda Mfg Co Ltd | Target of high silicon nichrome for sputtering |
| JPS6277436A (en) * | 1985-09-30 | 1987-04-09 | Susumu Kogyo Kk | Chromium-aluminum alloy and thin film element using same |
| US5718778A (en) * | 1995-03-31 | 1998-02-17 | Hitachi Metals, Ltd. | Chromium target and process for producing the same |
| JP2008010604A (en) * | 2006-06-29 | 2008-01-17 | Sumitomo Metal Mining Co Ltd | Resistor thin film material, resistor thin film, sputtering target for forming the same, and thin-film resistor and its manufacturing method |
| JP2011119234A (en) * | 2009-10-29 | 2011-06-16 | Sumitomo Metal Mining Co Ltd | Resistor material, sputtering target for forming resistor thin film, resistor thin film, thin film resistor, and method of manufacturing same |
-
1981
- 1981-07-30 JP JP11983781A patent/JPS5822379A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59157282A (en) * | 1983-02-24 | 1984-09-06 | Toyo Soda Mfg Co Ltd | Target of high silicon nichrome for sputtering |
| JPH0323630B2 (en) * | 1983-02-24 | 1991-03-29 | Tosoh Corp | |
| JPS6277436A (en) * | 1985-09-30 | 1987-04-09 | Susumu Kogyo Kk | Chromium-aluminum alloy and thin film element using same |
| JPH0457740B2 (en) * | 1985-09-30 | 1992-09-14 | Susumu Ind Co Ltd | |
| US5718778A (en) * | 1995-03-31 | 1998-02-17 | Hitachi Metals, Ltd. | Chromium target and process for producing the same |
| JP2008010604A (en) * | 2006-06-29 | 2008-01-17 | Sumitomo Metal Mining Co Ltd | Resistor thin film material, resistor thin film, sputtering target for forming the same, and thin-film resistor and its manufacturing method |
| JP4622946B2 (en) * | 2006-06-29 | 2011-02-02 | 住友金属鉱山株式会社 | Resistance thin film material, sputtering target for forming resistance thin film, resistance thin film, thin film resistor, and manufacturing method thereof. |
| JP2011119234A (en) * | 2009-10-29 | 2011-06-16 | Sumitomo Metal Mining Co Ltd | Resistor material, sputtering target for forming resistor thin film, resistor thin film, thin film resistor, and method of manufacturing same |
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