JPH0287501A - Electric resistance material - Google Patents
Electric resistance materialInfo
- Publication number
- JPH0287501A JPH0287501A JP63239135A JP23913588A JPH0287501A JP H0287501 A JPH0287501 A JP H0287501A JP 63239135 A JP63239135 A JP 63239135A JP 23913588 A JP23913588 A JP 23913588A JP H0287501 A JPH0287501 A JP H0287501A
- Authority
- JP
- Japan
- Prior art keywords
- resistance
- aluminum
- boron
- thin film
- resistance material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 title claims abstract description 40
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052796 boron Inorganic materials 0.000 claims abstract description 20
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 17
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 17
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000001301 oxygen Substances 0.000 claims abstract description 17
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 17
- 229910002058 ternary alloy Inorganic materials 0.000 claims abstract description 11
- QRRWWGNBSQSBAM-UHFFFAOYSA-N alumane;chromium Chemical compound [AlH3].[Cr] QRRWWGNBSQSBAM-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000000203 mixture Substances 0.000 claims abstract description 9
- 229910000838 Al alloy Inorganic materials 0.000 claims abstract description 6
- 230000007613 environmental effect Effects 0.000 abstract description 7
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052804 chromium Inorganic materials 0.000 abstract description 4
- 239000011651 chromium Substances 0.000 abstract description 4
- 239000010409 thin film Substances 0.000 description 29
- 239000000758 substrate Substances 0.000 description 18
- 239000000919 ceramic Substances 0.000 description 13
- 238000010586 diagram Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910002056 binary alloy Inorganic materials 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 229910000599 Cr alloy Inorganic materials 0.000 description 2
- QQHSIRTYSFLSRM-UHFFFAOYSA-N alumanylidynechromium Chemical compound [Al].[Cr] QQHSIRTYSFLSRM-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000007651 thermal printing Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910018487 Ni—Cr Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 239000000788 chromium alloy Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910000623 nickel–chromium alloy Inorganic materials 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 150000003482 tantalum compounds Chemical class 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Landscapes
- Non-Adjustable Resistors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、例えば薄膜抵抗器、抵抗ネットワーク、熱
印字素子の発熱体、その他に用いられる電気抵抗材料に
関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an electrically resistive material used for, for example, thin film resistors, resistance networks, heating elements of thermal printing elements, and others.
薄膜抵抗器に従来から用いられているニッケル・クロム
合金やタンタル化合物等の薄膜抵抗材料の比抵抗は、セ
ラミック基板上で０．２ｍΩ・ｃｍ程度と小さく、従っ
てこれを用いたチップ抵抗器等のような小型の抵抗器で
は高い抵抗値を得るのが困難であった０例えばこのよう
なチップ抵抗器の抵抗値の上限は数十にΩ〜百にΩであ
った。The specific resistance of thin film resistive materials such as nickel-chromium alloys and tantalum compounds conventionally used in thin film resistors is as low as 0.2 mΩ・cm on ceramic substrates, so it is difficult to make chip resistors etc. using these materials. It is difficult to obtain a high resistance value with such a small resistor.For example, the upper limit of the resistance value of such a chip resistor is from tens of ohms to hundreds of ohms.
また、熱印字素子の発熱体のために比抵抗の大きな薄膜
材料が幾つか開発されてはいるが、その抵抗温度係数は
数百ｐｐｍ／ｄｅｇ以上と著しく大きく、従ってこれを
精密抵抗器に用いることはできない。−例を示せば、Ｔ
ａ−３ｉＣ系材料では、比抵抗は４．２ｍΩ・ｃｍ程度
と比較的大きいものの、抵抗温度係数が一６００ＰＰｍ
／ｄｅｇ程度と著しく大きい。In addition, although some thin film materials with high specific resistance have been developed for the heating elements of thermal printing elements, their temperature coefficients of resistance are extremely large, at several hundred ppm/deg or more, and therefore they are used in precision resistors. It is not possible. -For example, T
Although the specific resistance of a-3iC material is relatively large at around 4.2 mΩ・cm, the temperature coefficient of resistance is 1600 PPm.
/deg, which is extremely large.
一方、チップ抵抗器に従来から多用されている厚膜抵抗
材料は、極めて高い抵抗値が容易に得られるものの、信
鎖性や長期の安定性に乏しく、また抵抗温度係数も大き
いため、高精度・高信顛性を要求される用途には適用で
きない０例えば、ＴａＢｚ系材料やＬａＢｂ系材料では
、１５０ ’Ｃで１０００時間放置による抵抗値変化率
は１％程度と比較的大きく、また抵抗温度係数も１５０
〜２５０ｐｐｍ／ｄｅｇ程度と比較的大きい。On the other hand, although thick film resistance materials, which have traditionally been widely used in chip resistors, can easily obtain extremely high resistance values, they lack reliability and long-term stability, and have a large resistance temperature coefficient, making it difficult to achieve high precision.・Cannot be applied to applications that require high reliability. For example, with TaBz-based materials and LaBb-based materials, the rate of change in resistance value when left at 150'C for 1000 hours is relatively large, about 1%, and the resistance temperature The coefficient is also 150
It is relatively large at ~250 ppm/deg.
そこでこの発明は、比抵抗が大きく、しかも抵抗温度係
数が小さく、かつ耐環境性に優れた電気抵抗材料を提供
することを目的とする。SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide an electrical resistance material that has a large specific resistance, a small temperature coefficient of resistance, and excellent environmental resistance.
この発明の電気抵抗材料は、Ｃｒ−ＡＩ−Ｂ−０系のも
のであり、アルミニウムを１０ないし４０原子％含むク
ロム・アルミニウム合金にホウ素を３０ないし７０原子
％添加した三元合金に対して、酸素を１０ないし３０原
子％添加した組成をしている。The electrical resistance material of the present invention is of the Cr-AI-B-0 series, and is a ternary alloy in which boron is added to a chromium-aluminum alloy containing 10 to 40 atomic % of aluminum and 30 to 70 atomic % of boron. It has a composition in which 10 to 30 atomic percent of oxygen is added.
上記三元合金は、換言すれば、その（クロム。In other words, the above ternary alloy is (chromium).
アルミニウム、ホウ素）の組成比（原子％）が、第１図
に示す三成分組成図におけるＡ（６３，７゜３０）、Ｂ
（２７，３，７０）、Ｃ（１８，１２゜７０）および
Ｄ （４２，２８，３０）の４点で囲まれる領域内にあ
ると言うこともできる。The composition ratio (atomic %) of aluminum, boron) is A (63,7°30) and B in the ternary composition diagram shown in Figure 1.
It can also be said that it is within a region surrounded by four points: (27, 3, 70), C (18, 12° 70), and D (42, 28, 30).
ここで、クロム・アルミニウム合金中のアルミニウム濃
度を１０〜４０ａｔ（原子）％の範囲に限定したのは、
アルミニウム濃度が１０ａｔ％未満ては比抵抗が小さく
、また４０ａｔ％を越えると抵抗温度係数が著しく負方
向に増大すると共に熱処理による電気的特性の変化も大
きくなるからである。Here, the aluminum concentration in the chromium-aluminum alloy was limited to a range of 10 to 40 at% (atomic)% because
This is because if the aluminum concentration is less than 10 at %, the specific resistance is small, and if it exceeds 40 at %, the temperature coefficient of resistance increases significantly in the negative direction, and the change in electrical characteristics due to heat treatment becomes large.
また、三元合金中のホウ素濃度を３０〜７０ａｔ％の範
囲に限定したのは、ホウ素濃度が３０ａｔ％未満では比
抵抗が小さく、また７０ａｔ％を越えると抵抗温度係数
が負方向に大きく増大するからである。In addition, the reason why the boron concentration in the ternary alloy is limited to a range of 30 to 70 at% is that when the boron concentration is less than 30 at%, the specific resistance is small, and when it exceeds 70 at%, the temperature coefficient of resistance increases significantly in the negative direction. It is from.
また、当該電気抵抗材料中の酸素濃度を１０〜３０ａｔ
％の範囲に限定したのは、酸素濃度が１０ａｔ％未満で
は比抵抗が小さく、また３０ａｔ％を越えると抵抗温度
係数が負方向に大きく増大するからである。In addition, the oxygen concentration in the electrical resistance material is 10 to 30at.
The reason why the oxygen concentration is limited to this range is that when the oxygen concentration is less than 10 at %, the specific resistance is small, and when it exceeds 30 at %, the temperature coefficient of resistance increases greatly in the negative direction.
２０ａｔ％のアルミニウムを含んだクロム・アルミニウ
ム二元合金ターゲットの表面にホウ素の粒を並べて三元
系としたターゲットを用い、酸素を添加したアルゴンガ
スによりスパッタリングを行い、種々の組成のＣｒ−Ａ
Ｉ−Ｂ−０系電気抵抗材料の薄膜をセラミック基板上に
堆積させた。この薄膜におけるクロム・アルミニウム合
金に対するホウ素の濃度はクロム・アルミニウム二元合
金ターゲットの表面に並べるホウ素の量を変えることに
より、また、クロムとアルミニウムとの組成比は２０ａ
ｔ％のアルミニウムを含んだクロム・アルミニウム二元
合金ターゲットの表面にクロムあるいはアルミニウムを
追加することにより、更に、Ｃｒ−ＡＩ−Ｂ三元合金に
対する酸素濃度はアルゴンガスに添加する酸素の濃度を
変化させることにより調整した。このＣｒ−ＡＩ−Ｂ−
０系薄膜電気抵抗材料の電気的特性と耐環境性を図面に
基づいて説明する。Using a ternary system target with boron grains arranged on the surface of a chromium-aluminum binary alloy target containing 20 at% aluminum, sputtering was performed with oxygen-added argon gas to produce Cr-A of various compositions.
A thin film of I-B-0 series electrically resistive material was deposited onto a ceramic substrate. The concentration of boron relative to the chromium-aluminum alloy in this thin film can be determined by changing the amount of boron arranged on the surface of the chromium-aluminum binary alloy target, and the composition ratio of chromium and aluminum can be adjusted to 20a.
By adding chromium or aluminum to the surface of the chromium-aluminum binary alloy target containing t% aluminum, the oxygen concentration for the Cr-AI-B ternary alloy can be changed by changing the concentration of oxygen added to the argon gas. It was adjusted by This Cr-AI-B-
The electrical properties and environmental resistance of the 0 series thin film electrical resistance material will be explained based on the drawings.
第２図は、セラミック基板上に堆積させて薄膜化したＣ
ｒ−ＡＩ−Ｂ−０系電気抵抗材料における電気的特性の
三元合金中のホウ素濃度依存性の一例を示す図であり、
このときのＣｒ −Ａ １合金中のアルミニム濃度は２
０ａｔ％、薄膜中の酸素濃度は１５〜３０ａｔ％であっ
た。Figure 2 shows a thin film of C deposited on a ceramic substrate.
FIG. 2 is a diagram showing an example of the dependence of electrical properties on boron concentration in a ternary alloy in an r-AI-B-0 based electrical resistance material,
At this time, the aluminum concentration in the Cr-A 1 alloy is 2
The oxygen concentration in the thin film was 15 to 30 at%.
この図から分かるように、当該Ｃｒ−ＡＩ−Ｂ−０系薄
膜は、およそ２０ａｔ％のホウ素が添加されることによ
り、その比抵抗が減少すると共に抵抗温度係数（ＴＣＰ
）の絶対値が急減する。しかし、２０〜３０ａｔ％以上
のホウ素濃度域では、ホウ素濃度の増加に伴い比抵抗が
著しく（例えば従来のＮｉ−Ｃｒ合金の一桁以上に）増
大するものの、７０ａｔ％程度までは抵抗温度係数の絶
対値にあまり大きな変化は生じなく電気抵抗材料として
実用的な値を示す。As can be seen from this figure, when approximately 20 at% boron is added to the Cr-AI-B-0 thin film, its specific resistance decreases and its temperature coefficient of resistance (TCP) decreases.
) suddenly decreases in absolute value. However, in the boron concentration range of 20 to 30 at% or more, as the boron concentration increases, the resistivity increases significantly (for example, by one order of magnitude or more in conventional Ni-Cr alloys), but up to about 70 at%, the temperature coefficient of resistance increases. There is no significant change in the absolute value, and it shows a practical value as an electrical resistance material.
更に、これらの薄膜に数百°Ｃでの安定化熱処理（第３
図および第４図の熱処理も同様）を施すと、比抵抗は若
干減少するものの、抵抗温度係数の絶対値は半減し、よ
り高精度の抵抗材料として使用し得る特性が得られるこ
とが分かる。Furthermore, these thin films were subjected to stabilization heat treatment (third stage) at several hundred degrees Celsius.
It can be seen that when the heat treatment shown in FIG. 4 and FIG. 4 is applied, although the specific resistance is slightly reduced, the absolute value of the temperature coefficient of resistance is halved, and characteristics that can be used as a resistor material with higher precision are obtained.
尚、上記の２０〜３０ａｔ％以上のホウ素濃度域におけ
る薄膜の構造は、Ｘ線回折によれば非晶質化しているも
のと認められ、このような非晶質構造を維持することが
、上記のような°優れた電気的特性を維持する上で好ま
しいと言える。In addition, the structure of the thin film in the boron concentration range of 20 to 30 at% or more is recognized to be amorphous according to X-ray diffraction, and maintaining such an amorphous structure is necessary to maintain such an amorphous structure. It can be said that this is preferable in terms of maintaining excellent electrical characteristics such as °.
第３図は、セラミック基板上に堆積させて薄膜化したＣ
ｒ−ＡＩ−Ｂ−０系電気抵抗材料における電気的特性の
Ｃｒ−Ａ１合金中のアルミニウム濃度依存性の一例を示
す図であり、このときのＣｒ−Ａ１合金に対するホウ素
濃度は４５ａｔ％、薄膜中の酸素濃度はｌＯ〜３０ａｔ
％であった。Figure 3 shows a thin film of C deposited on a ceramic substrate.
It is a diagram showing an example of the dependence of the electrical properties of the r-AI-B-0 series electrical resistance material on the aluminum concentration in the Cr-A1 alloy. The oxygen concentration is lO~30at
%Met.
この図から分かるように、当該Ｃｒ−ＡＩ−Ｂ−０系薄
膜は、Ｃｒ−Ａ１合金中のアルミニウム濃度が１０ａｔ
％未満では比抵抗が小さく、また４０ａｔ％を越えると
抵抗温度係数（ＴＣＲ）が負方向に増大し熱処理での電
気的特性の変化も太き（なる。As can be seen from this figure, the Cr-AI-B-0 thin film has an aluminum concentration of 10at in the Cr-A1 alloy.
If it is less than 40 at %, the specific resistance is small, and if it exceeds 40 at %, the temperature coefficient of resistance (TCR) increases in the negative direction, and the change in electrical characteristics during heat treatment becomes large.
従って、当該アルミニウム濃度は、１０〜４０ａｔ％の
範囲内にするのが好ましい。Therefore, the aluminum concentration is preferably within the range of 10 to 40 at%.
第４図は、セラミック基板上に堆積させて薄膜化したＣ
ｒ−ＡＩ−Ｂ−０系電気抵抗材料における電気的特性の
酸素濃度依存性の一例を示す図であり、このときの２０
ａｔ％Ａｌ−Ｃｒ合金に対するホウ素濃度は５５ａｔ％
であった。Figure 4 shows a thin film of C deposited on a ceramic substrate.
FIG. 2 is a diagram showing an example of the dependence of electrical properties on oxygen concentration in r-AI-B-0-based electrical resistance materials, where 20
boron concentration for at% Al-Cr alloy is 55 at%
Met.
この図から分かるように、当該Ｃｒ−ＡＩ−Ｂ−０系薄
膜は、酸素濃度が１０ａｔ％未満では比抵抗が小さく、
また３０ａｔ％越えると抵抗温度係数（ＴＣＲ）が負方
向に大きく増大して、厚膜抵抗材料と同様の電気的特性
を示す、従って、当該酸素濃度は、１０〜３０ａｔ％の
範囲内にするのが好ましい。As can be seen from this figure, the specific resistance of the Cr-AI-B-0 thin film is small when the oxygen concentration is less than 10 at%.
Furthermore, if the oxygen concentration exceeds 30 at%, the temperature coefficient of resistance (TCR) increases greatly in the negative direction and exhibits electrical characteristics similar to those of thick film resistive materials. Therefore, the oxygen concentration should be within the range of 10 to 30 at%. is preferred.
第５図は、セラミック基板上に堆積させて薄膜化したＣ
ｒ−ＡＩ−Ｂ−０系電気抵抗材料における電気的特性の
耐環境性の一例を示す図であり、このときの２０ａｔ％
Ａｌ−Ｃｒ合金に対するホウ素濃度は５５ａｔ％、薄膜
中の酸素濃度は約２０ａｔ％であった。Figure 5 shows a thin film of C deposited on a ceramic substrate.
It is a figure showing an example of the environmental resistance of the electrical characteristics of r-AI-B-0 series electrical resistance material, in which 20at%
The boron concentration in the Al-Cr alloy was 55 at%, and the oxygen concentration in the thin film was about 20 at%.
尚、用いた試片はセラミック基板上の薄膜表面が露出し
たものであり、耐湿性は純水中での煮沸、また耐酸化性
は１５０°Ｃの空気中での放置による電気抵抗の変化に
より評価した。ちなみに、この純水煮沸試験は、−船釣
な抵抗器の評価に適用される湿中負荷試験（６０℃、９
５％ＲＩ（、定格負荷）に比べて４桁以上厳しい試験に
なる。The sample used was a thin film on a ceramic substrate with the surface exposed, and moisture resistance was determined by boiling in pure water, and oxidation resistance was determined by changes in electrical resistance when left in air at 150°C. evaluated. By the way, this pure water boiling test is a humidity load test (60℃, 90℃) applied to the evaluation of resistors used in boat fishing.
The test is four orders of magnitude more severe than 5% RI (rated load).
この図から分かるように、当該Ｃｒ−ＡＩ−Ｂ−〇系薄
膜は、耐湿・耐酸化性のどちらも時間の経過と共に電気
抵抗が増大するものの、その変化率は極めて小さく、従
って高安定の抵抗材料であることが分かる。As can be seen from this figure, although the electrical resistance of the Cr-AI-B-〇-based thin film increases over time for both moisture resistance and oxidation resistance, the rate of change is extremely small, and therefore it has a highly stable resistance. You can see that it is the material.
尚、上記実施例では、Ｃｒ−ＡＩ−Ｂ−０系電気抵抗材
料を薄膜化して作製するのに、制御の比較的簡単なスパ
ッタリングを用いたが、真空蒸着等の他の薄膜形成手段
を用いても良い。In the above example, sputtering, which is relatively easy to control, was used to form a thin film of the Cr-AI-B-0 based electrical resistance material, but other thin film forming means such as vacuum evaporation could also be used. It's okay.
また、上記実施例では、薄膜を堆積させる基板にセラミ
ック基板を用いたが、ガラス基板や表面に電気絶縁層を
設けた金属板等の他の電気絶縁性基板を用いても良い、
ガラス基板を用いれば、周知のように、比抵抗はセラミ
ック基板の場合の約半分になる。Further, in the above embodiment, a ceramic substrate was used as the substrate on which the thin film was deposited, but other electrically insulating substrates such as a glass substrate or a metal plate with an electrically insulating layer provided on the surface may be used.
As is well known, if a glass substrate is used, the specific resistance will be approximately half that of a ceramic substrate.
また、当該Ｃｒ−ＡＩ−Ｂ−０系電気抵抗材料は、上記
のように電気絶縁性基板上に薄膜化するようにすれば比
較的簡単に作製することができるが、勿論必要に応じて
、厚膜化したリバルクとして用いることも可能である。Further, the Cr-AI-B-0 based electrical resistance material can be produced relatively easily by forming it into a thin film on an electrically insulating substrate as described above, but of course, if necessary, It is also possible to use it as a thicker rebulk.
以上のようにこの発明によれば、比抵抗が大きく、しか
も抵抗温度係数が小さく、かつ耐環境性に優れた電気抵
抗材料が得られる。その場合、当該電気抵抗材料の構造
が非晶質である方が、上記のような優れた電気的特性を
維持する上で好ましい。As described above, according to the present invention, an electrical resistance material having a large specific resistance, a small temperature coefficient of resistance, and excellent environmental resistance can be obtained. In this case, it is preferable that the electric resistance material has an amorphous structure in order to maintain the above-mentioned excellent electric properties.
従って当該電気抵抗材料を用いれば、例えば、抵抗値が
高くかつ高精度・高信軌性のチップ抵抗器や高集積抵抗
ネットワーク等の実現が可能になる。Therefore, by using the electrical resistance material, it is possible to realize, for example, a chip resistor with a high resistance value, high accuracy, and high reliability, a highly integrated resistance network, and the like.
より具体例を示せば、表面実装部品等として用いられる
薄膜チップ抵抗器の抵抗値の上限が従来は数十にΩ〜百
にΩ程度であったものを、当該電気抵抗材料を用いれば
、これを−桁程度増大させることが可能になる。To give a more specific example, the upper limit of the resistance value of a thin film chip resistor used as a surface mount component, etc., was previously on the order of tens of ohms to hundreds of ohms. It becomes possible to increase the amount by -order of magnitude.
また、従来は厚膜抵抗材料を用いていたため精度・信頼
性の点で劣っていた百にΩ程度以上の抵抗値のチップ抵
抗器も、当該電気抵抗材料を用いれば、高精度でかつ信
頼性の高いものとすることができる。In addition, chip resistors with a resistance value of more than 100 ohms, which conventionally used thick-film resistance materials and were inferior in terms of accuracy and reliability, can now be made with high precision and reliability by using this electrical resistance material. It can be made to have a high value.
第１図は、この発明に係る電気抵抗材料における三元合
金の組成比を示す三成分組成図である。
第２図は、セラミック基板上に堆積させて薄膜化したＣ
ｒ−ＡＩ−Ｂ−０系電気抵抗材料における電気的特性の
三元合金中のホウ素濃度依存性の一例を示す図である。
第３図は、セラミック基板上に堆積させて薄膜化したＣ
ｒ−ＡＩ−Ｂ−０系電気抵抗材料における電気的特性の
Ｃｒ −Ａ Ｉ合金中のアルミニウム濃度依存性の一例
を示す図である。第４図は、セラミック基板上に堆積さ
せて薄膜化したＣｒ−ＡＩ−Ｂ−０系電気抵抗材料にお
ける電気的特性の酸素濃度依存性の一例を示す図である
。
第５図は、セラミック基板上に堆積させて薄膜化したＣ
ｒ−ＡＩ−Ｂ−０系電気抵抗材料における電気的特性の
耐環境性の一例を示す図である。FIG. 1 is a ternary composition diagram showing the composition ratio of the ternary alloy in the electrical resistance material according to the present invention. Figure 2 shows a thin film of C deposited on a ceramic substrate.
It is a figure which shows an example of the boron concentration dependence in a ternary alloy of the electrical property in r-AI-B-0 type|system|group electric resistance material. Figure 3 shows a thin film of C deposited on a ceramic substrate.
It is a figure which shows an example of the aluminum concentration dependence in Cr-AI alloy of the electrical property in r-AI-B-0 type electric resistance material. FIG. 4 is a diagram showing an example of the dependence of electrical characteristics on oxygen concentration in a Cr-AI-B-0 based electrical resistance material deposited on a ceramic substrate to form a thin film. Figure 5 shows a thin film of C deposited on a ceramic substrate.
It is a figure which shows an example of the environmental resistance of the electrical property of r-AI-B-0 type|system|group electric resistance material.
Claims (2)
・アルミニウム合金にホウ素を３０ないし７０原子％添
加した三元合金に対して、酸素を１０ないし３０原子％
添加した組成の電気抵抗材料。(1) For a ternary alloy in which 30 to 70 atom% of boron is added to a chromium-aluminum alloy containing 10 to 40 atom% of aluminum, 10 to 30 atom% of oxygen is added.
Electrical resistance material with added composition.
気抵抗材料。(2) The electrical resistance material according to claim 1, wherein the structure of the material is amorphous.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63239135A JPH0287501A (en) | 1988-09-24 | 1988-09-24 | Electric resistance material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63239135A JPH0287501A (en) | 1988-09-24 | 1988-09-24 | Electric resistance material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0287501A true JPH0287501A (en) | 1990-03-28 |
| JPH0577321B2 JPH0577321B2 (en) | 1993-10-26 |
Family
ID=17040294
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63239135A Granted JPH0287501A (en) | 1988-09-24 | 1988-09-24 | Electric resistance material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0287501A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5227231A (en) * | 1991-06-19 | 1993-07-13 | Susumu Co., Ltd. | Electrical resistive material |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62109301A (en) * | 1985-11-08 | 1987-05-20 | 株式会社日立製作所 | Heat sensitive recording head |
| JPS62165302A (en) * | 1986-01-16 | 1987-07-21 | 進工業株式会社 | High resistance material |
-
1988
- 1988-09-24 JP JP63239135A patent/JPH0287501A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62109301A (en) * | 1985-11-08 | 1987-05-20 | 株式会社日立製作所 | Heat sensitive recording head |
| JPS62165302A (en) * | 1986-01-16 | 1987-07-21 | 進工業株式会社 | High resistance material |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5227231A (en) * | 1991-06-19 | 1993-07-13 | Susumu Co., Ltd. | Electrical resistive material |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0577321B2 (en) | 1993-10-26 |
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