JP4121270B2 - NTC thermistor made of quaternary alloy material and resistor using the same material - Google Patents
NTC thermistor made of quaternary alloy material and resistor using the same material Download PDFInfo
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- JP4121270B2 JP4121270B2 JP2001373006A JP2001373006A JP4121270B2 JP 4121270 B2 JP4121270 B2 JP 4121270B2 JP 2001373006 A JP2001373006 A JP 2001373006A JP 2001373006 A JP2001373006 A JP 2001373006A JP 4121270 B2 JP4121270 B2 JP 4121270B2
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- Prior art keywords
- alloy material
- resistor
- ntc thermistor
- temperature
- quaternary alloy
- Prior art date
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- 239000000956 alloy Substances 0.000 title claims description 15
- 229910002059 quaternary alloy Inorganic materials 0.000 title description 4
- 239000000463 material Substances 0.000 title description 3
- 239000010409 thin film Substances 0.000 claims description 13
- 239000000203 mixture Substances 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910019819 Cr—Si Inorganic materials 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Images
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- Thermistors And Varistors (AREA)
Description
【０００１】
【発明の属する技術分野】
この発明は、４元合金材料からなる負温度係数（ＮＴＣ）サーミスタや同材料を用いた抵抗器に関する。
【０００２】
【従来の技術】
ＮＴＣサーミスタは、温度を計測する用途のほかに、半導体素子のように正の温度特性をもつ電気的素子の特性を補償するために用いられる。計測に用いようとする電気的素子の正特性とこれを補償するために用いるサーミスタの負特性とは、互いに正負のみ反転したものが理想的であるが、電気的素子によりその特性は異なる。そこで、これを整合させるためのソフトウェアや回路が設けられる。この場合、サーミスタの特性としては、非線形な曲線より直線に近い方が整合させやすい。
【０００３】
【発明が解決しようとする課題】
しかし、従来のＮＴＣサーミスタは、温度係数の絶対値が大きく、しかも直線性が極めて悪い。従って、整合させるための演算処理や回路が複雑となっている。
それ故、この発明の課題は、直線性に優れた負の抵抗温度特性を有する合金材料からなるＮＴＣサーミスタ及び同材料を用いた抵抗器を提供することにある。
【０００４】
【課題を解決するための手段】
その課題を解決するために、この発明のＮＴＣサーミスタを構成するとともに、抵抗器にも用いられる合金材料は、
Ａｌ、Ｂ、Ｃｒ、Ｓｉの４元素から構成され、Ａｌ：２〜６（好ましくは３〜５）ａｔ％、Ｂ：３〜６５（好ましくは４〜６４）ａｔ％、Ｃｒ：７〜１３（好ましくは８〜１２）ａｔ％、Ｓｉ：２４〜８３（好ましくは２５〜８２）ａｔ％の組成範囲をもつことを特徴とする。
【０００５】
この組成範囲をもつことにより、直線性に優れた負の抵抗温度特性が得られる。従って、この合金材料からなるＮＴＣサーミスタによれば、電気的素子の特性と整合するプログラムや回路を容易に制作することができる。また、この合金材料からなる薄膜と、この薄膜を支持するガラス基板やセラミック基板などの絶縁基板とを備えることにより、直線性に優れた抵抗器として用いることもできる。
【０００６】
更に、この合金材料は、これを４００℃〜６００℃で加熱することにより、その抵抗温度係数の絶対値を制御することができる。従って、種々の正の温度特性をもつ電気的素子の特性を補償することができる。
【０００７】
【実施例】
−実施例１−
ＡｌＢＣｒＳｉ基板（Al:B:Cr:Si=10:7:26:67at%）上にＢチップ及びＳｉチップを配置し、これをターゲットとしてアルミナセラミック基板上にスパッタリングすることにより、表１に示す組成No.1〜4のＡｌ−Ｂ−Ｃｒ−Ｓｉ４元合金からなる薄膜を形成した。薄膜中の成分比は、ＡｌＢＣｒＳｉ基板の重量に対するＢチップ及びＳｉチップの重量で調整した。
【０００８】
【表１】
上記薄膜のうち組成No.２〜４のものについて、４端子法により−５０℃から＋１７５℃までの種々の温度における比抵抗を測定した。比較のために株式会社村田製作所製ＮＴＣサーミスタ（型式：NTSA0XH103FE1B0）についても同様に測定した。２５℃の比抵抗値を１とした場合の各温度における測定結果を図１に示す。
図１から明らかなように、この発明の合金組成に属する薄膜は、抵抗温度特性が負勾配を示し、且つその直線性が公知のＮＴＣサーミスタに比べて著しく優れていた。
【００１０】
−実施例２−
実施例１と同じ手順で表１に示した組成No.1〜4のＡｌ−Ｂ−Ｃｒ−Ｓｉ４元合金からなる薄膜を形成した。この薄膜をアルミナセラミック基板とともに水素２％、窒素９８％の混合ガス雰囲気中４００℃、５００℃又は６００℃で１０分間熱処理した後、４端子法により２５℃及び１２５℃における比抵抗を測定し、測定値より温度係数を算出した。得られた比抵抗及び温度係数とＳｉ／（Ａｌ＋Ｂ＋Ｃｒ＋Ｓｉ）比率との関係を図２に示す。
【００１１】
ここで温度係数は以下の式（１）で定義される値である。
温度係数＝（ρ−ρ0）／（ρ0ΔＴ）・・・・（１）
ρ：任意温度（本例では１２５℃）での比抵抗
ρ0：基準温度（本例では２５℃）での比抵抗
ΔＴ：温度差
【００１２】
図２に見られるように、この発明の合金組成に属する薄膜は、これを加熱することによって比抵抗を５mΩ・cmから20000mΩ・cmの範囲で、抵抗温度係数を−５００ppm/℃から−４０００ppm/℃の範囲で所望の値に制御することができる。
【００１３】
【発明の効果】
以上のように、この発明の合金は、直線性に優れた負の抵抗温度特性を有するので、この合金材料からなるＮＴＣサーミスタによれば、電気的素子の特性と整合するプログラムや回路を容易に制作することができる。
【図面の簡単な説明】
【図１】 各種組成の薄膜の抵抗温度特性を示すグラフである。
【図２】 各種組成の薄膜を加熱したときの比抵抗及び温度係数の変化を示すグラフである。[0001]
BACKGROUND OF THE INVENTION
This invention relates to a resistor with a negative temperature coefficient (NTC) thermistor and the same material consisting of quaternary alloy materials.
[0002]
[Prior art]
NTC thermistors are used to compensate for the characteristics of electrical elements having positive temperature characteristics, such as semiconductor elements, in addition to applications for measuring temperature. Ideally, the positive characteristics of the electrical element to be used for measurement and the negative characteristics of the thermistor used to compensate for this are the ones in which only positive and negative are inverted, but the characteristics differ depending on the electrical element. Therefore, software and a circuit for matching them are provided. In this case, as the thermistor characteristics, matching closer to a straight line is easier than a non-linear curve.
[0003]
[Problems to be solved by the invention]
However, the conventional NTC thermistor has a large absolute value of the temperature coefficient and extremely poor linearity. Therefore, the arithmetic processing and circuit for matching are complicated.
Therefore, an object of the present invention is to provide an NTC thermistor made of an alloy material having a negative resistance temperature characteristic excellent in linearity and a resistor using the material .
[0004]
[Means for Solving the Problems]
To solve the problem, as well as constituting a NTC thermistor of the present invention, an alloy material used in resistors,
It is composed of four elements of Al, B, Cr and Si, Al: 2 to 6 (preferably 3 to 5) at%, B: 3 to 65 (preferably 4 to 64) at%, Cr: 7 to 13 ( Preferably, it has a composition range of 8 to 12) at% and Si: 24 to 83 (preferably 25 to 82) at%.
[0005]
By having this composition range, a negative resistance temperature characteristic excellent in linearity can be obtained. Therefore, according to the NTC thermistor made of this alloy material, it is possible to easily produce programs and circuits that match the characteristics of the electrical elements. Moreover, it can also be used as a resistor excellent in linearity by providing the thin film which consists of this alloy material, and insulating substrates, such as a glass substrate and a ceramic substrate which support this thin film.
[0006]
Furthermore, the absolute value of the temperature coefficient of resistance of this alloy material can be controlled by heating it at 400 ° C. to 600 ° C. Therefore, it is possible to compensate for the characteristics of electrical elements having various positive temperature characteristics.
[0007]
【Example】
Example 1
The composition shown in Table 1 is obtained by arranging a B chip and an Si chip on an AlBCrSi substrate (Al: B: Cr: Si = 10: 7: 26: 67 at%), and sputtering this onto an alumina ceramic substrate as a target. Thin films made of No. 1 to 4 Al—B—Cr—Si quaternary alloys were formed. The component ratio in the thin film was adjusted by the weight of the B chip and the Si chip relative to the weight of the AlBCrSi substrate.
[0008]
[Table 1]
Among the thin films, those having composition Nos. 2 to 4 were measured for specific resistance at various temperatures from −50 ° C. to + 175 ° C. by the four-terminal method. For comparison, an NTC thermistor manufactured by Murata Manufacturing Co., Ltd. (model: NTSA0XH103FE1B0) was also measured in the same manner. The measurement results at each temperature when the specific resistance value at 25 ° C. is 1 are shown in FIG.
As is clear from FIG. 1, the thin film belonging to the alloy composition of the present invention has a negative resistance temperature characteristic and its linearity is significantly superior to known NTC thermistors.
[0010]
-Example 2-
A thin film made of an Al—B—Cr—Si quaternary alloy having the composition No. 1 to No. 4 shown in Table 1 was formed in the same procedure as in Example 1. After this thin film was heat-treated at 400 ° C., 500 ° C. or 600 ° C. for 10 minutes in a mixed gas atmosphere of 2% hydrogen and 98% nitrogen together with an alumina ceramic substrate, the specific resistance at 25 ° C. and 125 ° C. was measured by the 4-terminal method, The temperature coefficient was calculated from the measured value. FIG. 2 shows the relationship between the specific resistance and temperature coefficient obtained and the Si / (Al + B + Cr + Si) ratio.
[0011]
Here, the temperature coefficient is a value defined by the following equation (1).
Temperature coefficient = (ρ−ρ 0 ) / (ρ 0 ΔT) (1)
ρ: specific resistance at an arbitrary temperature (125 ° C. in this example) ρ 0 : specific resistance at a reference temperature (25 ° C. in this example) ΔT: temperature difference
As shown in FIG. 2, the thin film belonging to the alloy composition of the present invention is heated to have a specific resistance in the range of 5 mΩ · cm to 20000 mΩ · cm, and a resistance temperature coefficient of −500 ppm / ° C. to −4000 ppm / It can be controlled to a desired value in the range of ° C.
[0013]
【The invention's effect】
As described above, the alloy of the present invention has a negative resistance temperature characteristic excellent in linearity. Therefore, according to the NTC thermistor made of this alloy material, a program and a circuit that match the characteristics of the electrical element can be easily obtained. Can be produced.
[Brief description of the drawings]
FIG. 1 is a graph showing resistance temperature characteristics of thin films having various compositions.
FIG. 2 is a graph showing changes in specific resistance and temperature coefficient when thin films having various compositions are heated.
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001373006A JP4121270B2 (en) | 2001-12-06 | 2001-12-06 | NTC thermistor made of quaternary alloy material and resistor using the same material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001373006A JP4121270B2 (en) | 2001-12-06 | 2001-12-06 | NTC thermistor made of quaternary alloy material and resistor using the same material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003171728A JP2003171728A (en) | 2003-06-20 |
| JP4121270B2 true JP4121270B2 (en) | 2008-07-23 |
Family
ID=19181792
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001373006A Expired - Lifetime JP4121270B2 (en) | 2001-12-06 | 2001-12-06 | NTC thermistor made of quaternary alloy material and resistor using the same material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4121270B2 (en) |
-
2001
- 2001-12-06 JP JP2001373006A patent/JP4121270B2/en not_active Expired - Lifetime
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| Publication number | Publication date |
|---|---|
| JP2003171728A (en) | 2003-06-20 |
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