JPS5913699A - 半導体気相成長方法 - Google Patents

半導体気相成長方法

Info

Publication number
JPS5913699A
JPS5913699A JP11837082A JP11837082A JPS5913699A JP S5913699 A JPS5913699 A JP S5913699A JP 11837082 A JP11837082 A JP 11837082A JP 11837082 A JP11837082 A JP 11837082A JP S5913699 A JPS5913699 A JP S5913699A
Authority
JP
Japan
Prior art keywords
film thickness
gas
raw material
distribution
distribution function
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11837082A
Other languages
English (en)
Japanese (ja)
Other versions
JPH033639B2 (cg-RX-API-DMAC7.html
Inventor
Takashi Aoyama
隆 青山
Hironori Inoue
洋典 井上
Takaya Suzuki
誉也 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP11837082A priority Critical patent/JPS5913699A/ja
Publication of JPS5913699A publication Critical patent/JPS5913699A/ja
Publication of JPH033639B2 publication Critical patent/JPH033639B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP11837082A 1982-07-09 1982-07-09 半導体気相成長方法 Granted JPS5913699A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11837082A JPS5913699A (ja) 1982-07-09 1982-07-09 半導体気相成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11837082A JPS5913699A (ja) 1982-07-09 1982-07-09 半導体気相成長方法

Publications (2)

Publication Number Publication Date
JPS5913699A true JPS5913699A (ja) 1984-01-24
JPH033639B2 JPH033639B2 (cg-RX-API-DMAC7.html) 1991-01-21

Family

ID=14735020

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11837082A Granted JPS5913699A (ja) 1982-07-09 1982-07-09 半導体気相成長方法

Country Status (1)

Country Link
JP (1) JPS5913699A (cg-RX-API-DMAC7.html)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6225747A (ja) * 1985-07-26 1987-02-03 Konishiroku Photo Ind Co Ltd ハロゲン化銀写真感光材料

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6225747A (ja) * 1985-07-26 1987-02-03 Konishiroku Photo Ind Co Ltd ハロゲン化銀写真感光材料

Also Published As

Publication number Publication date
JPH033639B2 (cg-RX-API-DMAC7.html) 1991-01-21

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