JPS59136649A - 化学的感応性半導体センサ− - Google Patents
化学的感応性半導体センサ−Info
- Publication number
- JPS59136649A JPS59136649A JP58010770A JP1077083A JPS59136649A JP S59136649 A JPS59136649 A JP S59136649A JP 58010770 A JP58010770 A JP 58010770A JP 1077083 A JP1077083 A JP 1077083A JP S59136649 A JPS59136649 A JP S59136649A
- Authority
- JP
- Japan
- Prior art keywords
- region
- film
- substrate
- amorphous silicon
- sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
Landscapes
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- Molecular Biology (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Engineering & Computer Science (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58010770A JPS59136649A (ja) | 1983-01-25 | 1983-01-25 | 化学的感応性半導体センサ− |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58010770A JPS59136649A (ja) | 1983-01-25 | 1983-01-25 | 化学的感応性半導体センサ− |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59136649A true JPS59136649A (ja) | 1984-08-06 |
| JPH0474666B2 JPH0474666B2 (OSRAM) | 1992-11-26 |
Family
ID=11759564
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58010770A Granted JPS59136649A (ja) | 1983-01-25 | 1983-01-25 | 化学的感応性半導体センサ− |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59136649A (OSRAM) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63165748A (ja) * | 1986-12-26 | 1988-07-09 | Kanegafuchi Chem Ind Co Ltd | 非晶質半導体イオンセンサ |
| JPS63315940A (ja) * | 1987-06-19 | 1988-12-23 | Res Dev Corp Of Japan | アモルファスシリコンを用いたイオンセンシング電界効果トランジスタとその製造方法 |
-
1983
- 1983-01-25 JP JP58010770A patent/JPS59136649A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63165748A (ja) * | 1986-12-26 | 1988-07-09 | Kanegafuchi Chem Ind Co Ltd | 非晶質半導体イオンセンサ |
| JPS63315940A (ja) * | 1987-06-19 | 1988-12-23 | Res Dev Corp Of Japan | アモルファスシリコンを用いたイオンセンシング電界効果トランジスタとその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0474666B2 (OSRAM) | 1992-11-26 |
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