JPS59136649A - 化学的感応性半導体センサ− - Google Patents

化学的感応性半導体センサ−

Info

Publication number
JPS59136649A
JPS59136649A JP58010770A JP1077083A JPS59136649A JP S59136649 A JPS59136649 A JP S59136649A JP 58010770 A JP58010770 A JP 58010770A JP 1077083 A JP1077083 A JP 1077083A JP S59136649 A JPS59136649 A JP S59136649A
Authority
JP
Japan
Prior art keywords
region
film
substrate
amorphous silicon
sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58010770A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0474666B2 (OSRAM
Inventor
Michihiro Nakamura
通宏 中村
Makoto Yano
誠 矢野
Kazuo Dai
提 和夫
Yoshitaka Ito
善孝 伊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shindengen Electric Manufacturing Co Ltd
Kuraray Co Ltd
Original Assignee
Shindengen Electric Manufacturing Co Ltd
Kuraray Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shindengen Electric Manufacturing Co Ltd, Kuraray Co Ltd filed Critical Shindengen Electric Manufacturing Co Ltd
Priority to JP58010770A priority Critical patent/JPS59136649A/ja
Publication of JPS59136649A publication Critical patent/JPS59136649A/ja
Publication of JPH0474666B2 publication Critical patent/JPH0474666B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403Cells and electrode assemblies
    • G01N27/414Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS

Landscapes

  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Molecular Biology (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
JP58010770A 1983-01-25 1983-01-25 化学的感応性半導体センサ− Granted JPS59136649A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58010770A JPS59136649A (ja) 1983-01-25 1983-01-25 化学的感応性半導体センサ−

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58010770A JPS59136649A (ja) 1983-01-25 1983-01-25 化学的感応性半導体センサ−

Publications (2)

Publication Number Publication Date
JPS59136649A true JPS59136649A (ja) 1984-08-06
JPH0474666B2 JPH0474666B2 (OSRAM) 1992-11-26

Family

ID=11759564

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58010770A Granted JPS59136649A (ja) 1983-01-25 1983-01-25 化学的感応性半導体センサ−

Country Status (1)

Country Link
JP (1) JPS59136649A (OSRAM)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63165748A (ja) * 1986-12-26 1988-07-09 Kanegafuchi Chem Ind Co Ltd 非晶質半導体イオンセンサ
JPS63315940A (ja) * 1987-06-19 1988-12-23 Res Dev Corp Of Japan アモルファスシリコンを用いたイオンセンシング電界効果トランジスタとその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63165748A (ja) * 1986-12-26 1988-07-09 Kanegafuchi Chem Ind Co Ltd 非晶質半導体イオンセンサ
JPS63315940A (ja) * 1987-06-19 1988-12-23 Res Dev Corp Of Japan アモルファスシリコンを用いたイオンセンシング電界効果トランジスタとその製造方法

Also Published As

Publication number Publication date
JPH0474666B2 (OSRAM) 1992-11-26

Similar Documents

Publication Publication Date Title
US4354308A (en) Method for manufacture of a selective chemical sensitive FET transducer
US4505799A (en) ISFET sensor and method of manufacture
JP4212667B2 (ja) 圧力センサおよび電気化学的センサを組み合わせたセンサの製造方法
US6573734B2 (en) Integrated thin film liquid conductivity sensor
US5446437A (en) Temperature sensor
KR100449069B1 (ko) 미소전극, 미소전극 어레이 및 미소전극 제조 방법
KR100993167B1 (ko) 나노구조물 센서
US5944970A (en) Solid state electrochemical sensors
US4791465A (en) Field effect transistor type semiconductor sensor and method of manufacturing the same
JPH1062383A (ja) 電気化学センサ
US20140061728A1 (en) Gate Biasing Electrodes For FET Sensors
JPH11317474A (ja) 回路基板およびその製造方法
US5945832A (en) Structure and method of measuring electrical characteristics of a molecule
JPS59136649A (ja) 化学的感応性半導体センサ−
US4670731A (en) Semiconductor temperature sensor
JPH0765985B2 (ja) ISFET並びにこれを利用したISFETプローブとISFET pHセンサ
KR20190016424A (ko) 가스센서의 제조 방법
JPS6242539A (ja) 化学感応性半導体装置及びその製造方法
EP0230084A1 (en) Blister FET pressure sensor
JPS63208753A (ja) 免疫センサ及び免疫検出方法
Zhu et al. Microarray H2O2 electrodes as base elements of high-response glucose sensors
KR20050076101A (ko) 마이크로 캐비티 상에 형성한 다중가스 검지용 단일칩가스센서 및 그 제조방법
KR200408169Y1 (ko) 브릿지 구조를 갖는 가스 검지용 단일칩 가스센서
KR20060094664A (ko) 브릿지 구조를 갖는 가스 검지용 단일칩 가스센서 및 그 제조방법
JPH0452409B2 (OSRAM)