JPS59132349A - 合金薄膜の成長方法 - Google Patents
合金薄膜の成長方法Info
- Publication number
- JPS59132349A JPS59132349A JP58220900A JP22090083A JPS59132349A JP S59132349 A JPS59132349 A JP S59132349A JP 58220900 A JP58220900 A JP 58220900A JP 22090083 A JP22090083 A JP 22090083A JP S59132349 A JPS59132349 A JP S59132349A
- Authority
- JP
- Japan
- Prior art keywords
- alloy
- thin film
- growth
- growth rate
- growing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims description 133
- 229910045601 alloy Inorganic materials 0.000 title claims description 116
- 239000000956 alloy Substances 0.000 title claims description 116
- 238000000034 method Methods 0.000 title claims description 55
- 239000000758 substrate Substances 0.000 claims description 57
- 239000010410 layer Substances 0.000 claims description 47
- 150000001875 compounds Chemical class 0.000 claims description 23
- 239000010408 film Substances 0.000 claims description 23
- 230000010355 oscillation Effects 0.000 claims description 22
- 238000010894 electron beam technology Methods 0.000 claims description 13
- 239000000203 mixture Substances 0.000 claims description 13
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 10
- 238000003475 lamination Methods 0.000 claims description 8
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 claims description 6
- 229910002059 quaternary alloy Inorganic materials 0.000 claims description 6
- 239000002356 single layer Substances 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 230000000737 periodic effect Effects 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 4
- 229910002056 binary alloy Inorganic materials 0.000 claims description 3
- 239000000470 constituent Substances 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 229910002058 ternary alloy Inorganic materials 0.000 claims description 3
- 238000005275 alloying Methods 0.000 claims description 2
- 238000001771 vacuum deposition Methods 0.000 claims description 2
- 229940126062 Compound A Drugs 0.000 claims 1
- NLDMNSXOCDLTTB-UHFFFAOYSA-N Heterophylliin A Natural products O1C2COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC2C(OC(=O)C=2C=C(O)C(O)=C(O)C=2)C(O)C1OC(=O)C1=CC(O)=C(O)C(O)=C1 NLDMNSXOCDLTTB-UHFFFAOYSA-N 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 12
- 229910052733 gallium Inorganic materials 0.000 description 11
- 230000004907 flux Effects 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 8
- 238000002003 electron diffraction Methods 0.000 description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- RBFDCQDDCJFGIK-UHFFFAOYSA-N arsenic germanium Chemical compound [Ge].[As] RBFDCQDDCJFGIK-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 238000002128 reflection high energy electron diffraction Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 101000677891 Homo sapiens Iron-sulfur clusters transporter ABCB7, mitochondrial Proteins 0.000 description 1
- 102100021504 Iron-sulfur clusters transporter ABCB7, mitochondrial Human genes 0.000 description 1
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910000756 V alloy Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 1
- -1 aluminum germanium Chemical compound 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 150000003346 selenoethers Chemical class 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
- WYUZTTNXJUJWQQ-UHFFFAOYSA-N tin telluride Chemical compound [Te]=[Sn] WYUZTTNXJUJWQQ-UHFFFAOYSA-N 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
- C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/548—Controlling the composition
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
- C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/52—Alloys
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB8233778 | 1982-11-26 | ||
| GB08233778A GB2130716A (en) | 1982-11-26 | 1982-11-26 | Method of determining the composition of an alloy film grown by a layer-by layer process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59132349A true JPS59132349A (ja) | 1984-07-30 |
| JPH0565479B1 JPH0565479B1 (enExample) | 1993-09-17 |
Family
ID=10534554
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58220900A Pending JPS59132349A (ja) | 1982-11-26 | 1983-11-25 | 合金薄膜の成長方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4575462A (enExample) |
| EP (1) | EP0110468B1 (enExample) |
| JP (1) | JPS59132349A (enExample) |
| CA (1) | CA1208806A (enExample) |
| DE (1) | DE3363539D1 (enExample) |
| GB (1) | GB2130716A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6483657A (en) * | 1987-09-24 | 1989-03-29 | Shimadzu Corp | Vacuum deposition device |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4855013A (en) * | 1984-08-13 | 1989-08-08 | Agency Of Industrial Science And Technology | Method for controlling the thickness of a thin crystal film |
| FR2578095B1 (fr) * | 1985-02-28 | 1988-04-15 | Avitaya Francois D | Procede et dispositif de depot par croissance epitaxiale d'un materiau dope |
| JPS62222633A (ja) * | 1986-03-25 | 1987-09-30 | Sharp Corp | 半導体素子の製造方法 |
| US4732108A (en) * | 1986-08-26 | 1988-03-22 | The Perkin-Elmer Corporation | Apparatus for monitoring epitaxial growth |
| US5194983A (en) * | 1986-11-27 | 1993-03-16 | Centre National De La Recherche Scientifique (C.N.R.S.) | Superlattice optical monitor |
| JPH0727861B2 (ja) * | 1987-03-27 | 1995-03-29 | 富士通株式会社 | ▲ｉｉｉ▼−▲ｖ▼族化合物半導体結晶の成長方法 |
| EP0307096A3 (en) * | 1987-09-08 | 1990-12-05 | Varian Associates, Inc. | Growth rate monitor for molecular beam epitaxy |
| US4812650A (en) * | 1987-09-08 | 1989-03-14 | Varian Associates, Inc. | Growth rate monitor for molecular beam epitaxy |
| FI81926C (fi) * | 1987-09-29 | 1990-12-10 | Nokia Oy Ab | Foerfarande foer uppbyggning av gaas-filmer pao si- och gaas-substrater. |
| GB8726639D0 (en) * | 1987-11-13 | 1987-12-16 | Vg Instr Groups Ltd | Vacuum evaporation & deposition |
| US4952527A (en) * | 1988-02-19 | 1990-08-28 | Massachusetts Institute Of Technology | Method of making buffer layers for III-V devices using solid phase epitaxy |
| US4931132A (en) * | 1988-10-07 | 1990-06-05 | Bell Communications Research, Inc. | Optical control of deposition of crystal monolayers |
| JPH0647515B2 (ja) * | 1988-12-08 | 1994-06-22 | シャープ株式会社 | 化合物半導体エピタキシャル成長法 |
| US5152866A (en) * | 1989-01-13 | 1992-10-06 | Hughes Aircraft Company | Plasma/radiation assisted molecular beam epitaxy method |
| JPH0751478B2 (ja) * | 1989-11-24 | 1995-06-05 | 新技術事業団 | 化合物結晶のエピタキシャル成長方法 |
| US5094974A (en) * | 1990-02-28 | 1992-03-10 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Growth of III-V films by control of MBE growth front stoichiometry |
| US5091335A (en) * | 1990-03-30 | 1992-02-25 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | MBE growth technology for high quality strained III-V layers |
| US5171399A (en) * | 1990-08-15 | 1992-12-15 | The United States Of America As Represented By The United States Department Of Energy | Reflection mass spectrometry technique for monitoring and controlling composition during molecular beam epitaxy |
| US5330610A (en) * | 1993-05-28 | 1994-07-19 | Martin Marietta Energy Systems, Inc. | Method of digital epilaxy by externally controlled closed-loop feedback |
| US5543170A (en) * | 1993-08-26 | 1996-08-06 | The United States Of America As Represented By The Secretary Of The Air Force | Desorption mass spectrometric control of alloy composition during molecular beam epitaxy |
| US5985025A (en) * | 1995-02-01 | 1999-11-16 | Texas Instruments Incorporated | Semiconductor growth method |
| US7060131B2 (en) * | 2001-05-09 | 2006-06-13 | Hrl Laboratories, Llc | Epitaxy with compliant layers of group-V species |
| US7271025B2 (en) * | 2005-07-12 | 2007-09-18 | Micron Technology, Inc. | Image sensor with SOI substrate |
| US8261690B2 (en) * | 2006-07-14 | 2012-09-11 | Georgia Tech Research Corporation | In-situ flux measurement devices, methods, and systems |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4203799A (en) * | 1975-05-30 | 1980-05-20 | Hitachi, Ltd. | Method for monitoring thickness of epitaxial growth layer on substrate |
| US4036167A (en) * | 1976-01-30 | 1977-07-19 | Inficon Leybold-Heraeus Inc. | Apparatus for monitoring vacuum deposition processes |
| NL7605234A (nl) * | 1976-05-17 | 1977-11-21 | Philips Nv | Werkwijze voor het vervaardigen van een halfge- leiderinrichting en halfgeleiderinrichting ver- vaardigd met behulp van de werkwijze. |
| GB2030551B (en) * | 1978-09-22 | 1982-08-04 | Philips Electronic Associated | Growing a gaas layer doped with s se or te |
| EP0031180A3 (en) * | 1979-12-19 | 1983-07-20 | Philips Electronics Uk Limited | Method of growing a doped iii-v alloy layer by molecular beam epitaxy and a semiconductor device comprising a semiconductor substrate bearing an epitaxial layer of a doped iii-v alloy grown by such a method |
| US4400407A (en) * | 1980-12-29 | 1983-08-23 | Rockwell International Corporation | Method for deposition of thin film alloys utilizing electron beam vaporization |
-
1982
- 1982-11-26 GB GB08233778A patent/GB2130716A/en not_active Withdrawn
-
1983
- 1983-11-17 EP EP83201640A patent/EP0110468B1/en not_active Expired
- 1983-11-17 US US06/552,653 patent/US4575462A/en not_active Expired - Fee Related
- 1983-11-17 DE DE8383201640T patent/DE3363539D1/de not_active Expired
- 1983-11-24 CA CA000441824A patent/CA1208806A/en not_active Expired
- 1983-11-25 JP JP58220900A patent/JPS59132349A/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6483657A (en) * | 1987-09-24 | 1989-03-29 | Shimadzu Corp | Vacuum deposition device |
Also Published As
| Publication number | Publication date |
|---|---|
| GB2130716A (en) | 1984-06-06 |
| DE3363539D1 (en) | 1986-06-19 |
| EP0110468B1 (en) | 1986-05-14 |
| EP0110468A1 (en) | 1984-06-13 |
| US4575462A (en) | 1986-03-11 |
| JPH0565479B1 (enExample) | 1993-09-17 |
| CA1208806A (en) | 1986-07-29 |
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