DE3363539D1 - Method of growing an alloy film by a layer-by-layer process on a substrate, and a method of making a semiconductor device - Google Patents

Method of growing an alloy film by a layer-by-layer process on a substrate, and a method of making a semiconductor device

Info

Publication number
DE3363539D1
DE3363539D1 DE8383201640T DE3363539T DE3363539D1 DE 3363539 D1 DE3363539 D1 DE 3363539D1 DE 8383201640 T DE8383201640 T DE 8383201640T DE 3363539 T DE3363539 T DE 3363539T DE 3363539 D1 DE3363539 D1 DE 3363539D1
Authority
DE
Germany
Prior art keywords
layer
growing
substrate
making
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8383201640T
Other languages
German (de)
English (en)
Inventor
Peter James Dobson
Charles Thomas Foxon
James Hamilton Neave
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Koninklijke Philips NV
Original Assignee
Philips Electronic and Associated Industries Ltd
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd, Philips Gloeilampenfabrieken NV filed Critical Philips Electronic and Associated Industries Ltd
Application granted granted Critical
Publication of DE3363539D1 publication Critical patent/DE3363539D1/de
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/548—Controlling the composition
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/52—Alloys

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
DE8383201640T 1982-11-26 1983-11-17 Method of growing an alloy film by a layer-by-layer process on a substrate, and a method of making a semiconductor device Expired DE3363539D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB08233778A GB2130716A (en) 1982-11-26 1982-11-26 Method of determining the composition of an alloy film grown by a layer-by layer process

Publications (1)

Publication Number Publication Date
DE3363539D1 true DE3363539D1 (en) 1986-06-19

Family

ID=10534554

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383201640T Expired DE3363539D1 (en) 1982-11-26 1983-11-17 Method of growing an alloy film by a layer-by-layer process on a substrate, and a method of making a semiconductor device

Country Status (6)

Country Link
US (1) US4575462A (enExample)
EP (1) EP0110468B1 (enExample)
JP (1) JPS59132349A (enExample)
CA (1) CA1208806A (enExample)
DE (1) DE3363539D1 (enExample)
GB (1) GB2130716A (enExample)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4855013A (en) * 1984-08-13 1989-08-08 Agency Of Industrial Science And Technology Method for controlling the thickness of a thin crystal film
FR2578095B1 (fr) * 1985-02-28 1988-04-15 Avitaya Francois D Procede et dispositif de depot par croissance epitaxiale d'un materiau dope
JPS62222633A (ja) * 1986-03-25 1987-09-30 Sharp Corp 半導体素子の製造方法
US4732108A (en) * 1986-08-26 1988-03-22 The Perkin-Elmer Corporation Apparatus for monitoring epitaxial growth
US5194983A (en) * 1986-11-27 1993-03-16 Centre National De La Recherche Scientifique (C.N.R.S.) Superlattice optical monitor
JPH0727861B2 (ja) * 1987-03-27 1995-03-29 富士通株式会社 ▲ｉｉｉ▼−▲ｖ▼族化合物半導体結晶の成長方法
EP0307096A3 (en) * 1987-09-08 1990-12-05 Varian Associates, Inc. Growth rate monitor for molecular beam epitaxy
US4812650A (en) * 1987-09-08 1989-03-14 Varian Associates, Inc. Growth rate monitor for molecular beam epitaxy
JP2625760B2 (ja) * 1987-09-24 1997-07-02 株式会社島津製作所 真空蒸着装置
FI81926C (fi) * 1987-09-29 1990-12-10 Nokia Oy Ab Foerfarande foer uppbyggning av gaas-filmer pao si- och gaas-substrater.
GB8726639D0 (en) * 1987-11-13 1987-12-16 Vg Instr Groups Ltd Vacuum evaporation & deposition
US4952527A (en) * 1988-02-19 1990-08-28 Massachusetts Institute Of Technology Method of making buffer layers for III-V devices using solid phase epitaxy
US4931132A (en) * 1988-10-07 1990-06-05 Bell Communications Research, Inc. Optical control of deposition of crystal monolayers
JPH0647515B2 (ja) * 1988-12-08 1994-06-22 シャープ株式会社 化合物半導体エピタキシャル成長法
US5152866A (en) * 1989-01-13 1992-10-06 Hughes Aircraft Company Plasma/radiation assisted molecular beam epitaxy method
JPH0751478B2 (ja) * 1989-11-24 1995-06-05 新技術事業団 化合物結晶のエピタキシャル成長方法
US5094974A (en) * 1990-02-28 1992-03-10 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Growth of III-V films by control of MBE growth front stoichiometry
US5091335A (en) * 1990-03-30 1992-02-25 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration MBE growth technology for high quality strained III-V layers
US5171399A (en) * 1990-08-15 1992-12-15 The United States Of America As Represented By The United States Department Of Energy Reflection mass spectrometry technique for monitoring and controlling composition during molecular beam epitaxy
US5330610A (en) * 1993-05-28 1994-07-19 Martin Marietta Energy Systems, Inc. Method of digital epilaxy by externally controlled closed-loop feedback
US5543170A (en) * 1993-08-26 1996-08-06 The United States Of America As Represented By The Secretary Of The Air Force Desorption mass spectrometric control of alloy composition during molecular beam epitaxy
US5985025A (en) * 1995-02-01 1999-11-16 Texas Instruments Incorporated Semiconductor growth method
US7060131B2 (en) * 2001-05-09 2006-06-13 Hrl Laboratories, Llc Epitaxy with compliant layers of group-V species
US7271025B2 (en) * 2005-07-12 2007-09-18 Micron Technology, Inc. Image sensor with SOI substrate
US8261690B2 (en) * 2006-07-14 2012-09-11 Georgia Tech Research Corporation In-situ flux measurement devices, methods, and systems

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4203799A (en) * 1975-05-30 1980-05-20 Hitachi, Ltd. Method for monitoring thickness of epitaxial growth layer on substrate
US4036167A (en) * 1976-01-30 1977-07-19 Inficon Leybold-Heraeus Inc. Apparatus for monitoring vacuum deposition processes
NL7605234A (nl) * 1976-05-17 1977-11-21 Philips Nv Werkwijze voor het vervaardigen van een halfge- leiderinrichting en halfgeleiderinrichting ver- vaardigd met behulp van de werkwijze.
GB2030551B (en) * 1978-09-22 1982-08-04 Philips Electronic Associated Growing a gaas layer doped with s se or te
EP0031180A3 (en) * 1979-12-19 1983-07-20 Philips Electronics Uk Limited Method of growing a doped iii-v alloy layer by molecular beam epitaxy and a semiconductor device comprising a semiconductor substrate bearing an epitaxial layer of a doped iii-v alloy grown by such a method
US4400407A (en) * 1980-12-29 1983-08-23 Rockwell International Corporation Method for deposition of thin film alloys utilizing electron beam vaporization

Also Published As

Publication number Publication date
GB2130716A (en) 1984-06-06
EP0110468B1 (en) 1986-05-14
EP0110468A1 (en) 1984-06-13
US4575462A (en) 1986-03-11
JPH0565479B1 (enExample) 1993-09-17
CA1208806A (en) 1986-07-29
JPS59132349A (ja) 1984-07-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee