JPS59128299A - 燐化アルミニウム・インジウム単結晶の製造方法 - Google Patents

燐化アルミニウム・インジウム単結晶の製造方法

Info

Publication number
JPS59128299A
JPS59128299A JP58001868A JP186883A JPS59128299A JP S59128299 A JPS59128299 A JP S59128299A JP 58001868 A JP58001868 A JP 58001868A JP 186883 A JP186883 A JP 186883A JP S59128299 A JPS59128299 A JP S59128299A
Authority
JP
Japan
Prior art keywords
aluminum
single crystal
substrate
starting materials
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58001868A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0369879B2 (enExample
Inventor
Isao Hino
日野　功
Toru Suzuki
徹 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP58001868A priority Critical patent/JPS59128299A/ja
Publication of JPS59128299A publication Critical patent/JPS59128299A/ja
Publication of JPH0369879B2 publication Critical patent/JPH0369879B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP58001868A 1983-01-10 1983-01-10 燐化アルミニウム・インジウム単結晶の製造方法 Granted JPS59128299A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58001868A JPS59128299A (ja) 1983-01-10 1983-01-10 燐化アルミニウム・インジウム単結晶の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58001868A JPS59128299A (ja) 1983-01-10 1983-01-10 燐化アルミニウム・インジウム単結晶の製造方法

Publications (2)

Publication Number Publication Date
JPS59128299A true JPS59128299A (ja) 1984-07-24
JPH0369879B2 JPH0369879B2 (enExample) 1991-11-05

Family

ID=11513521

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58001868A Granted JPS59128299A (ja) 1983-01-10 1983-01-10 燐化アルミニウム・インジウム単結晶の製造方法

Country Status (1)

Country Link
JP (1) JPS59128299A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4761269A (en) * 1986-06-12 1988-08-02 Crystal Specialties, Inc. Apparatus for depositing material on a substrate
US4901670A (en) * 1988-08-22 1990-02-20 Santa Barbara Research Center Elemental mercury source for metal-organic chemical vapor deposition

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4834798A (enExample) * 1971-09-06 1973-05-22
JPS4876472A (enExample) * 1972-01-13 1973-10-15

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4834798A (enExample) * 1971-09-06 1973-05-22
JPS4876472A (enExample) * 1972-01-13 1973-10-15

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4761269A (en) * 1986-06-12 1988-08-02 Crystal Specialties, Inc. Apparatus for depositing material on a substrate
US4901670A (en) * 1988-08-22 1990-02-20 Santa Barbara Research Center Elemental mercury source for metal-organic chemical vapor deposition

Also Published As

Publication number Publication date
JPH0369879B2 (enExample) 1991-11-05

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