JPS59127878A - 凹凸を有する光電変換装置用基板作製方法 - Google Patents

凹凸を有する光電変換装置用基板作製方法

Info

Publication number
JPS59127878A
JPS59127878A JP58003155A JP315583A JPS59127878A JP S59127878 A JPS59127878 A JP S59127878A JP 58003155 A JP58003155 A JP 58003155A JP 315583 A JP315583 A JP 315583A JP S59127878 A JPS59127878 A JP S59127878A
Authority
JP
Japan
Prior art keywords
substrate
ctf
semiconductor
electrode
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58003155A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0578195B2 (OSRAM
Inventor
Shunpei Yamazaki
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP58003155A priority Critical patent/JPS59127878A/ja
Publication of JPS59127878A publication Critical patent/JPS59127878A/ja
Publication of JPH0578195B2 publication Critical patent/JPH0578195B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)
JP58003155A 1983-01-12 1983-01-12 凹凸を有する光電変換装置用基板作製方法 Granted JPS59127878A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58003155A JPS59127878A (ja) 1983-01-12 1983-01-12 凹凸を有する光電変換装置用基板作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58003155A JPS59127878A (ja) 1983-01-12 1983-01-12 凹凸を有する光電変換装置用基板作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP4179181A Division JPH05198830A (ja) 1992-06-12 1992-06-12 光電変換装置作製方法

Publications (2)

Publication Number Publication Date
JPS59127878A true JPS59127878A (ja) 1984-07-23
JPH0578195B2 JPH0578195B2 (OSRAM) 1993-10-28

Family

ID=11549458

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58003155A Granted JPS59127878A (ja) 1983-01-12 1983-01-12 凹凸を有する光電変換装置用基板作製方法

Country Status (1)

Country Link
JP (1) JPS59127878A (OSRAM)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04127579A (ja) * 1990-09-19 1992-04-28 Hitachi Ltd コルゲート型太陽電池
JPH05198830A (ja) * 1992-06-12 1993-08-06 Semiconductor Energy Lab Co Ltd 光電変換装置作製方法
WO2012014723A1 (ja) * 2010-07-26 2012-02-02 浜松ホトニクス株式会社 光吸収基板の製造方法、及びそれを製造するための成形型の製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04127579A (ja) * 1990-09-19 1992-04-28 Hitachi Ltd コルゲート型太陽電池
JPH05198830A (ja) * 1992-06-12 1993-08-06 Semiconductor Energy Lab Co Ltd 光電変換装置作製方法
WO2012014723A1 (ja) * 2010-07-26 2012-02-02 浜松ホトニクス株式会社 光吸収基板の製造方法、及びそれを製造するための成形型の製造方法
JP5508533B2 (ja) * 2010-07-26 2014-06-04 浜松ホトニクス株式会社 光吸収基板の製造方法、及びそれを製造するための成形型の製造方法
US9108269B2 (en) 2010-07-26 2015-08-18 Hamamatsu Photonics K. K. Method for manufacturing light-absorbing substrate and method for manufacturing mold for making same

Also Published As

Publication number Publication date
JPH0578195B2 (OSRAM) 1993-10-28

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