JPS59126779A - 銅表面を粗面化するための方法 - Google Patents
銅表面を粗面化するための方法Info
- Publication number
- JPS59126779A JPS59126779A JP58180860A JP18086083A JPS59126779A JP S59126779 A JPS59126779 A JP S59126779A JP 58180860 A JP58180860 A JP 58180860A JP 18086083 A JP18086083 A JP 18086083A JP S59126779 A JPS59126779 A JP S59126779A
- Authority
- JP
- Japan
- Prior art keywords
- copper
- iodine
- plastic
- copper surface
- sample
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title description 37
- 229910052802 copper Inorganic materials 0.000 title description 36
- 239000010949 copper Substances 0.000 title description 36
- 238000000034 method Methods 0.000 title description 13
- 238000007788 roughening Methods 0.000 title description 5
- 229910052740 iodine Inorganic materials 0.000 description 22
- 239000011630 iodine Substances 0.000 description 22
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 18
- 239000004033 plastic Substances 0.000 description 13
- 229920003023 plastic Polymers 0.000 description 13
- -1 Iodine ions Chemical class 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000009832 plasma treatment Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910000831 Steel Inorganic materials 0.000 description 3
- GBRBMTNGQBKBQE-UHFFFAOYSA-L copper;diiodide Chemical compound I[Cu]I GBRBMTNGQBKBQE-UHFFFAOYSA-L 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 3
- 239000010959 steel Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical class II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 2
- 238000010849 ion bombardment Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 235000002918 Fraxinus excelsior Nutrition 0.000 description 1
- 206010028813 Nausea Diseases 0.000 description 1
- 235000010678 Paulownia tomentosa Nutrition 0.000 description 1
- 240000002834 Paulownia tomentosa Species 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 241000270708 Testudinidae Species 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000002956 ash Substances 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 230000008693 nausea Effects 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 235000011888 snacks Nutrition 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/382—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/09—Treatments involving charged particles
- H05K2203/095—Plasma, e.g. for treating a substrate to improve adhesion with a conductor or for cleaning holes
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Laminated Bodies (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
- ing And Chemical Polishing (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)
- Manufacturing Of Printed Wiring (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US454922 | 1982-12-30 | ||
| US06/454,922 US4416725A (en) | 1982-12-30 | 1982-12-30 | Copper texturing process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59126779A true JPS59126779A (ja) | 1984-07-21 |
| JPS6219513B2 JPS6219513B2 (en, 2012) | 1987-04-28 |
Family
ID=23806622
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58180860A Granted JPS59126779A (ja) | 1982-12-30 | 1983-09-30 | 銅表面を粗面化するための方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4416725A (en, 2012) |
| EP (1) | EP0112989B1 (en, 2012) |
| JP (1) | JPS59126779A (en, 2012) |
| DE (1) | DE3366120D1 (en, 2012) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10600639B2 (en) | 2016-11-14 | 2020-03-24 | Applied Materials, Inc. | SiN spacer profile patterning |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3376186D1 (en) * | 1983-08-02 | 1988-05-05 | Ibm Deutschland | Dry-etching process and its use |
| US4668366A (en) * | 1984-08-02 | 1987-05-26 | The Perkin-Elmer Corporation | Optical figuring by plasma assisted chemical transport and etching apparatus therefor |
| DE3523960A1 (de) * | 1985-07-04 | 1987-01-08 | Licentia Gmbh | Verfahren zur metallisierung eines elektrisch schlecht leitenden substrates aus einem anorganischen material |
| US4718972A (en) * | 1986-01-24 | 1988-01-12 | International Business Machines Corporation | Method of removing seed particles from circuit board substrate surface |
| US4908094A (en) * | 1986-04-14 | 1990-03-13 | International Business Machines Corporation | Method for laminating organic materials via surface modification |
| US4689111A (en) * | 1986-10-28 | 1987-08-25 | International Business Machines Corp. | Process for promoting the interlaminate adhesion of polymeric materials to metal surfaces |
| US5128008A (en) * | 1991-04-10 | 1992-07-07 | International Business Machines Corporation | Method of forming a microelectronic package having a copper substrate |
| US5153986A (en) * | 1991-07-17 | 1992-10-13 | International Business Machines | Method for fabricating metal core layers for a multi-layer circuit board |
| US5705082A (en) * | 1995-01-26 | 1998-01-06 | Chromalloy Gas Turbine Corporation | Roughening of metal surfaces |
| DE19731424C1 (de) * | 1997-07-22 | 1998-08-13 | Daimler Benz Ag | Verfahren zum Einbetten von metallischen Leitern mikroelektronischer Bauelemente in eine Kunststoffmasse |
| US6730237B2 (en) * | 2001-06-22 | 2004-05-04 | International Business Machines Corporation | Focused ion beam process for removal of copper |
| JP2015115334A (ja) * | 2013-12-09 | 2015-06-22 | イビデン株式会社 | プリント配線板及びプリント配線板の製造方法 |
| CN106653590A (zh) * | 2017-01-04 | 2017-05-10 | 京东方科技集团股份有限公司 | 阵列基板及其制作工艺、显示面板、显示装置 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3445264A (en) * | 1965-06-24 | 1969-05-20 | Ibm | Method and composition for treating the surface of polymeric articles to improve adhesion |
| US3573454A (en) * | 1968-04-22 | 1971-04-06 | Applied Res Lab | Method and apparatus for ion bombardment using negative ions |
| US3661747A (en) * | 1969-08-11 | 1972-05-09 | Bell Telephone Labor Inc | Method for etching thin film materials by direct cathodic back sputtering |
| US3808035A (en) * | 1970-12-09 | 1974-04-30 | M Stelter | Deposition of single or multiple layers on substrates from dilute gas sweep to produce optical components, electro-optical components, and the like |
| SU530486A1 (ru) * | 1974-01-11 | 1976-09-30 | Предприятие П/Я В-2194 | Способ размерного травлени меди |
| JPS544359A (en) * | 1977-06-10 | 1979-01-13 | Toyo Aluminium Kk | Method of making aluminum foil for positive electrode of electrorytic capacitor |
| JPS5531154A (en) * | 1978-08-28 | 1980-03-05 | Hitachi Ltd | Plasma etching apparatus |
| DE2850542C2 (de) * | 1978-11-22 | 1982-07-01 | Kernforschungsanlage Jülich GmbH, 5170 Jülich | Verfahren zum Ätzen von Oberflächen aus Kupfer oder Kupferlegierungen |
| US4264813A (en) * | 1979-06-29 | 1981-04-28 | International Business Machines Corportion | High intensity ion source using ionic conductors |
-
1982
- 1982-12-30 US US06/454,922 patent/US4416725A/en not_active Expired - Fee Related
-
1983
- 1983-09-30 JP JP58180860A patent/JPS59126779A/ja active Granted
- 1983-10-21 DE DE8383110503T patent/DE3366120D1/de not_active Expired
- 1983-10-21 EP EP83110503A patent/EP0112989B1/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10600639B2 (en) | 2016-11-14 | 2020-03-24 | Applied Materials, Inc. | SiN spacer profile patterning |
Also Published As
| Publication number | Publication date |
|---|---|
| EP0112989A1 (en) | 1984-07-11 |
| DE3366120D1 (en) | 1986-10-16 |
| EP0112989B1 (en) | 1986-09-10 |
| US4416725A (en) | 1983-11-22 |
| JPS6219513B2 (en, 2012) | 1987-04-28 |
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