JPS59124768A - 不揮発性半導体記憶装置の製造方法 - Google Patents

不揮発性半導体記憶装置の製造方法

Info

Publication number
JPS59124768A
JPS59124768A JP57233790A JP23379082A JPS59124768A JP S59124768 A JPS59124768 A JP S59124768A JP 57233790 A JP57233790 A JP 57233790A JP 23379082 A JP23379082 A JP 23379082A JP S59124768 A JPS59124768 A JP S59124768A
Authority
JP
Japan
Prior art keywords
layer
insulating layer
tantalum oxide
silicon
memory device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57233790A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0450754B2 (cs
Inventor
Takashi Kato
隆 加藤
Shinpei Tsuchiya
土屋　真平
Nobuo Toyokura
豊蔵　信夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57233790A priority Critical patent/JPS59124768A/ja
Publication of JPS59124768A publication Critical patent/JPS59124768A/ja
Publication of JPH0450754B2 publication Critical patent/JPH0450754B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors

Landscapes

  • Non-Volatile Memory (AREA)
  • Static Random-Access Memory (AREA)
  • Read Only Memory (AREA)
JP57233790A 1982-12-29 1982-12-29 不揮発性半導体記憶装置の製造方法 Granted JPS59124768A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57233790A JPS59124768A (ja) 1982-12-29 1982-12-29 不揮発性半導体記憶装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57233790A JPS59124768A (ja) 1982-12-29 1982-12-29 不揮発性半導体記憶装置の製造方法

Publications (2)

Publication Number Publication Date
JPS59124768A true JPS59124768A (ja) 1984-07-18
JPH0450754B2 JPH0450754B2 (cs) 1992-08-17

Family

ID=16960603

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57233790A Granted JPS59124768A (ja) 1982-12-29 1982-12-29 不揮発性半導体記憶装置の製造方法

Country Status (1)

Country Link
JP (1) JPS59124768A (cs)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5229595A (en) * 1991-12-19 1993-07-20 Xerox Corporation Fluid-filled color filtered input scanner arrays
US5698883A (en) * 1989-10-09 1997-12-16 Kabushiki Kaisha Toshiba MOS field effect transistor and method for manufacturing the same
JP2009117874A (ja) * 2001-06-28 2009-05-28 Samsung Electronics Co Ltd 浮遊トラップ型不揮発性メモリ素子

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4840668A (cs) * 1971-09-28 1973-06-14
JPS4979692A (cs) * 1972-12-07 1974-08-01
JPS49116982A (cs) * 1973-12-14 1974-11-08

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4840668A (cs) * 1971-09-28 1973-06-14
JPS4979692A (cs) * 1972-12-07 1974-08-01
JPS49116982A (cs) * 1973-12-14 1974-11-08

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5698883A (en) * 1989-10-09 1997-12-16 Kabushiki Kaisha Toshiba MOS field effect transistor and method for manufacturing the same
US5229595A (en) * 1991-12-19 1993-07-20 Xerox Corporation Fluid-filled color filtered input scanner arrays
JP2009117874A (ja) * 2001-06-28 2009-05-28 Samsung Electronics Co Ltd 浮遊トラップ型不揮発性メモリ素子

Also Published As

Publication number Publication date
JPH0450754B2 (cs) 1992-08-17

Similar Documents

Publication Publication Date Title
US5300802A (en) Semiconductor integrated circuit device having single-element type non-volatile memory elements
US5585293A (en) Fabrication process for a 1-transistor EEPROM memory device capable of low-voltage operation
KR100385041B1 (ko) Ｅｅｐｒｏｍ 메모리 셀 및 그 제조 방법
US20040256657A1 (en) [flash memory cell structure and method of manufacturing and operating the memory cell]
JPH10189776A (ja) 不揮発性半導体記憶装置およびその製造方法
USRE37959E1 (en) Semiconductor integrated circuit device and method of manufacturing the same
US5422292A (en) Process for fabricating split gate flash EEPROM memory
JP2980012B2 (ja) 不揮発性半導体記憶装置
US6522587B1 (en) Non-volatile semiconductor memory devices
JP3173907B2 (ja) 不揮発性記憶素子およびその製造方法
JPS59124768A (ja) 不揮発性半導体記憶装置の製造方法
JPH06104451A (ja) 不揮発性半導体記憶装置
US6757208B1 (en) Dual-bit nitride read only memory cell with parasitic amplifier and methods of fabricating and reading the same
JPH07202046A (ja) 不揮発性半導体記憶装置およびその製造方法
JP3389003B2 (ja) 不揮発性半導体記憶装置及びその製造方法
JP3139165B2 (ja) 不揮発性メモリセルの製造方法
JPH0555600A (ja) 半導体不揮発性記憶装置
JPH065875A (ja) 不揮発性メモリ装置
JPS62502156A (ja) フロ−ティング・ゲ−ト不揮発性電界効果メモリ−装置
JPH07106442A (ja) 不揮発性半導体記憶装置
JP3462526B2 (ja) 不揮発性記憶装置及びその製造方法
JPH065874A (ja) 不揮発性半導体記憶装置の製造方法
KR19990055792A (ko) 반도체 소자의 제조방법
JPH06125065A (ja) 不揮発性記憶装置およびその駆動方法
JPH0147906B2 (cs)