JPS59124169A - 化合物半導体装置 - Google Patents

化合物半導体装置

Info

Publication number
JPS59124169A
JPS59124169A JP57229255A JP22925582A JPS59124169A JP S59124169 A JPS59124169 A JP S59124169A JP 57229255 A JP57229255 A JP 57229255A JP 22925582 A JP22925582 A JP 22925582A JP S59124169 A JPS59124169 A JP S59124169A
Authority
JP
Japan
Prior art keywords
layer
barrier
type
potential
electron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57229255A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6359267B2 (cg-RX-API-DMAC7.html
Inventor
Yasumi Hikosaka
康己 彦坂
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57229255A priority Critical patent/JPS59124169A/ja
Publication of JPS59124169A publication Critical patent/JPS59124169A/ja
Publication of JPS6359267B2 publication Critical patent/JPS6359267B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP57229255A 1982-12-29 1982-12-29 化合物半導体装置 Granted JPS59124169A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57229255A JPS59124169A (ja) 1982-12-29 1982-12-29 化合物半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57229255A JPS59124169A (ja) 1982-12-29 1982-12-29 化合物半導体装置

Publications (2)

Publication Number Publication Date
JPS59124169A true JPS59124169A (ja) 1984-07-18
JPS6359267B2 JPS6359267B2 (cg-RX-API-DMAC7.html) 1988-11-18

Family

ID=16889239

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57229255A Granted JPS59124169A (ja) 1982-12-29 1982-12-29 化合物半導体装置

Country Status (1)

Country Link
JP (1) JPS59124169A (cg-RX-API-DMAC7.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59149063A (ja) * 1983-02-16 1984-08-25 Nec Corp 半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59149063A (ja) * 1983-02-16 1984-08-25 Nec Corp 半導体装置

Also Published As

Publication number Publication date
JPS6359267B2 (cg-RX-API-DMAC7.html) 1988-11-18

Similar Documents

Publication Publication Date Title
JP2786327B2 (ja) ヘテロ接合電界効果トランジスタ
JP2822547B2 (ja) 高電子移動度トランジスタ
US4410902A (en) Planar doped barrier semiconductor device
US8466495B2 (en) Field effect transistor with reduced gate leakage current
US4771326A (en) Composition double heterojunction transistor
TWI513008B (zh) 超陡峭二極體結構及其製造方法
JPH08512430A (ja) Ｍｏｓトレンチを有するショットキー障壁整流装置
JP2929899B2 (ja) 非線形の伝達特性をもつ電界効果トランジスタ
EP0566591A1 (en) SEMICONDUCTOR DEVICE.
US5206524A (en) Heterostructure bipolar transistor
US5955742A (en) Semiconductor device formed on a substrate having an off-angle surface and a fabrication process thereof
JPS59124169A (ja) 化合物半導体装置
JPH0355980B2 (cg-RX-API-DMAC7.html)
WO1997008740A1 (en) Graded compositions of ii-vi semiconductors and devices utilizing same
US4689646A (en) Depletion mode two-dimensional electron gas field effect transistor and the method for manufacturing the same
JP3054216B2 (ja) 半導体装置
JPH04277680A (ja) トンネルトランジスタ及びその製造方法
JPH0620142B2 (ja) 半導体装置
JPH0474487A (ja) 半導体レーザ
JP2606660B2 (ja) ヘテロ接合電界効果トランジスタ
JP2600755B2 (ja) 半導体装置
JPS6273674A (ja) 半導体装置
US20020145153A1 (en) Thin-film crystal wafer having pn junction and method for fabricating the wafer
JPS594178A (ja) 半導体装置
JPH02265251A (ja) 半導体装置