JPS5912368A - Evaluation of humidity resistance for hybrid integrated circuit package - Google Patents
Evaluation of humidity resistance for hybrid integrated circuit packageInfo
- Publication number
- JPS5912368A JPS5912368A JP57121653A JP12165382A JPS5912368A JP S5912368 A JPS5912368 A JP S5912368A JP 57121653 A JP57121653 A JP 57121653A JP 12165382 A JP12165382 A JP 12165382A JP S5912368 A JPS5912368 A JP S5912368A
- Authority
- JP
- Japan
- Prior art keywords
- package
- evaluation
- hybrid integrated
- integrated circuit
- circuit package
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
- G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
Abstract
Description
【発明の詳細な説明】
(1)発明の技術分野
本発明は樹脂モールド型混成来槓回路の耐湿性評価方法
に係り、特にトランジスタhFK%注?利用して、簡便
に実施できる耐湿性評価方θスに関する。DETAILED DESCRIPTION OF THE INVENTION (1) Technical Field of the Invention The present invention relates to a method for evaluating the moisture resistance of a resin molded hybrid circuit, and particularly relates to a method for evaluating the moisture resistance of a resin molded hybrid circuit. This invention relates to a moisture resistance evaluation method θ that can be easily implemented using the present invention.
(2)技術の背景
混成集積回路はアルミナ丞板寺の上に抵抗、コンデンサ
等の受動素子を形成し、さらにトランジスタ素子等の能
動素子を実装し、これらの素子を接続して、発掘回路、
デジタル/アナログコンバータ等の機能回路全構成した
もので、一般に周囲は樹脂モールドされる。(2) Background of the technology Hybrid integrated circuits are made by forming passive elements such as resistors and capacitors on an alumina board, then mounting active elements such as transistor elements, and connecting these elements to create an excavated circuit,
It consists of all functional circuits such as digital/analog converters, and the surrounding area is generally molded with resin.
このような混成集積回路パッケージにおいて、モールド
部分、または基板や端子との接合部音速して外部の湿気
が内部へ入り、また湿気によりモールド材料中に含鳴さ
れるイオンが放出され、これによっても内部の素子(特
に能動素子)に影響金与え、特性を劣化させる。In such hybrid integrated circuit packages, external moisture enters the molded portion or the joints with the substrate and terminals at the speed of sound, and the moisture releases ions contained in the molding material, which can also cause It affects internal elements (especially active elements) and deteriorates their characteristics.
従って混成乗積回路パッケージの耐湿性設計を行なうた
めには、完成した混成集積回路パッケージの内部の湿度
の状態ケ外部から測定することが必装となる。Therefore, in order to design the humidity resistance of a hybrid integrated circuit package, it is essential to measure the humidity inside the completed hybrid integrated circuit package from the outside.
(3)従来技術と問題点
従来、混成集積回路の耐湿性評価方法として感湿素子f
L:便用する方法や混成楽積回路そのものの特注パラメ
ータ変動を利用する等の方法があるが、前者ではパッケ
ージを透して侵入した湿気と、パッケージ材料中に含有
されるイオンによる要因との総合的なものによる影響を
評価するには不適当でおる。(3) Conventional technology and problems Conventionally, as a method for evaluating the moisture resistance of hybrid integrated circuits, a moisture-sensitive element f
L: There are convenient methods and methods that use custom-made parameter variations of the hybrid product circuit itself, but in the former method, it is possible to eliminate moisture entering through the package and ions contained in the package material. It is inappropriate to evaluate the overall impact.
また感湿素子による測定回路は一般に複1イ[である。Furthermore, a measurement circuit using a humidity sensing element is generally a multi-layer circuit.
後省では、通常、各素子11/j々の特性変動がめって
も、総合特注として外部へ現われない僚、補償回路金膜
ける等により回路マー7ン紫大きくとるよう設計されて
いる為、侵入した湿気に対して悪風よく測定できない。In later studies, normally, even if the characteristics of each element 11/j vary, it does not appear externally as a comprehensive custom order, and the circuit margin is designed to be large due to the compensation circuit gold film, etc. It is not possible to properly measure the moisture that has entered.
(4)発明の目的
本発明の目的は以上従来の欠点忙解泊し、比較的簡1更
に、しかも感度よく、微少体積の混成集積回路の耐湿性
評価の方法全提供する単にある。(4) Object of the Invention The object of the present invention is to overcome the above-mentioned drawbacks of the conventional method and to provide a relatively simple and sensitive method for evaluating the moisture resistance of a hybrid integrated circuit having a minute volume.
(5)@明の構成
上記本発明の目的は混成集積回路パッケージ内にトラン
ジスタチップを収納し、該トラン/メタの直流電流増巾
率(hyz )を測冗することにより、前記パッケージ
の耐湿性會評11′1IIT心ことを牛丁徴とする混成
集積回路パッケージの耐湿性評価方法により達成される
。(5) @ Akira's configuration The purpose of the present invention is to house a transistor chip in a hybrid integrated circuit package, and measure the direct current amplification rate (hyz) of the trans/meta to improve the moisture resistance of the package. This is achieved by a method for evaluating the moisture resistance of a hybrid integrated circuit package, which is based on the concept of 11'1 IIT.
(6)発明の実施例
本発明はトランジスタのhFEが湿気や、湿気によるパ
ッケージ材料中に含有されるイオンの放出等の影響で変
化することを利用して混成集積回路のパッケージの耐湿
性評価全行うものである。(6) Embodiments of the Invention The present invention utilizes the fact that the hFE of a transistor changes due to the influence of moisture and the release of ions contained in the package material due to moisture. It is something to do.
第1図はある一定加湿条件のもとにおける混成集積回路
パッケージ内のトランジスタのhFKの変化と時間の関
係ケ示した一例で、A、 B、 Oはそれぞれパッケ
ージ構造A1構造B1構造Cの場合全示している。第1
図かられかるようにパッケージ構造AX Bの場合では
湿気の影響か内容に及びトランジスタのhFIが変化し
ている。Figure 1 shows an example of the relationship between changes in hFK of transistors in a hybrid integrated circuit package and time under certain humidification conditions. It shows. 1st
As can be seen from the figure, in the case of package structure AXB, the hFI of the transistor changes depending on the influence of moisture.
次に本発明の実施例を以下に述べる。Next, examples of the present invention will be described below.
1、第3図に示すようにセラミック基板1に形成された
パターン上の適当な場所にトランジスタチップ2奮搭載
しワイヤリング3を行なう。1. As shown in FIG. 3, two transistor chips are mounted at appropriate locations on the pattern formed on the ceramic substrate 1, and wiring 3 is performed.
次に第3図に示すようにモールド樹脂4によって評価対
象となるパッケージングを行なう。Next, as shown in FIG. 3, packaging to be evaluated is performed using mold resin 4.
尚、ワイヤリング3eよモジー−屋外部のリード線5か
らhFm測定が可能なよう適当な位置に行なう。In addition, the wiring 3e and the mozzie are placed at an appropriate position so that hFm measurement can be made from the lead wire 5 in the outdoor area.
2、次に出来たモジー−ルを適当な零囲気の恒湿槽に放
喧し、一定時間毎に取り出し、hrx特注を測定する。2. Next, the resulting module is placed in a constant humidity tank with a suitable zero atmosphere, and is taken out at regular intervals to measure the custom-made hrx.
& 評価の判定は、実績のあるパッケージと、評価の対
象としているパッケージ材料中に犬施し、その相対比較
によるか、又は、異なった順境条件で同時に実施し、そ
の加速率から、合否を決矩する。& Evaluation can be made by applying the test to a package with a proven track record and the packaging material to be evaluated, and making a relative comparison, or by conducting the test simultaneously under different favorable conditions, and determining pass/fail based on the acceleration rate. do.
ζ 評価実施にあたっては、チップ自体の耐湿1生の要
因ケ除く為、同一製造単位(メーカー、型格、製造ロッ
ト)のチップ全便用するのか望ましい。ζ When conducting the evaluation, it is desirable to use all chips from the same manufacturing unit (manufacturer, type, manufacturing lot) in order to eliminate factors related to the moisture resistance of the chip itself.
なおhFl変化敏の測矩感度金上げる為2ヶ以上のトラ
ンジスタ全第4図の通り2ヶ以上縦列に接続すれは、下
式によりhFPlの変化量?感度良く測定できん。Furthermore, in order to increase the measurement sensitivity of hFl change sensitivity, if two or more transistors are connected in series as shown in Figure 4, the change in hFPl can be calculated using the following formula. Cannot measure with good sensitivity.
但LIB=ベース亀流、 IC=コレクタ亀流△hyB
:hyzの減少撤
n=縦属接続の段数
以上はトランジスタチップのhFg測定のため3端子の
リードを引き出しておくものであるが、端子数が少ない
場合は第5図に示すように接続して外部へ2端子で引き
出して測定することも可能である。However, LIB = base turtle style, IC = collector turtle style △hyB
:Decrease/removal of hyz n = If the number of stages of vertical connection is greater than 3 terminal leads should be pulled out for hFg measurement of the transistor chip, but if the number of terminals is small, connect as shown in Figure 5. It is also possible to take measurements by pulling it out to the outside using two terminals.
(7)発明の詳細
な説明したように本発明の耐湿性評価方法によれは、比
較的簡1更に、かつ感度よく混成集積回路の耐湿性評価
かり能となる。なお一般にトランジスタチップのhyl
!の低下は乾燥させても回復しないので、加湿試験佼、
測定までの環境条件(放噴温度、時間)の影?f全受け
にくい事、さらにトランジスタチップは比較的入手しや
すく、サイズが小さいので安価で、かつ小型パッケージ
における測定も容易に出来る利点がある。(7) As described in detail, the moisture resistance evaluation method of the present invention allows the evaluation of the moisture resistance of hybrid integrated circuits to be performed relatively easily and with high sensitivity. In general, the hyl of a transistor chip
! Since the decrease in water does not recover even after drying, humidification tests were conducted.
Is it due to the environmental conditions (emission temperature, time) before the measurement? In addition, transistor chips are relatively easy to obtain, are small in size, are inexpensive, and can be easily measured in small packages.
第1図は一定加湿条件における混成集積回路パッケージ
内のトランジスタのhFIffiの変化を示すグラフ例
、第2図、第3図は本発明の詳細な説明図、ヤ
第4図、第5図は測定用トランジスタの接続図1示す。
図においてlは基板、2はトランジスタチップ、3はボ
ンディングワイヤ、4はモールリド位1月旨、5はリー
ド線を示す。
第1図
−〉時間
第4図 第5図Figure 1 is an example graph showing changes in hFiffi of a transistor in a hybrid integrated circuit package under constant humidification conditions, Figures 2 and 3 are detailed illustrations of the present invention, and Figures 4 and 5 are measurements. Connection diagram 1 of the transistor for use is shown. In the figure, 1 is a substrate, 2 is a transistor chip, 3 is a bonding wire, 4 is a mold lead, and 5 is a lead wire. Figure 1-〉Time Figure 4 Figure 5
Claims (1)
し、該トランジスタの直流奄θ1t、増1]率(hy罵
)を測定することにより、自jJ記パッケージの耐湿性
全評1曲することを%徴とする混成集積回路パッケージ
の耐湿性評価方法。By housing a transistor chip in a hybrid integrated circuit packaging material and measuring the direct current strength θ1t, increase rate (hy expletive) of the transistor, the overall moisture resistance of the package can be evaluated as a % characteristic. Moisture resistance evaluation method for hybrid integrated circuit packages.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57121653A JPS5912368A (en) | 1982-07-13 | 1982-07-13 | Evaluation of humidity resistance for hybrid integrated circuit package |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57121653A JPS5912368A (en) | 1982-07-13 | 1982-07-13 | Evaluation of humidity resistance for hybrid integrated circuit package |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5912368A true JPS5912368A (en) | 1984-01-23 |
Family
ID=14816570
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57121653A Pending JPS5912368A (en) | 1982-07-13 | 1982-07-13 | Evaluation of humidity resistance for hybrid integrated circuit package |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5912368A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5452102A (en) * | 1993-03-15 | 1995-09-19 | Hitachi, Ltd. | Image processing unit |
-
1982
- 1982-07-13 JP JP57121653A patent/JPS5912368A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5452102A (en) * | 1993-03-15 | 1995-09-19 | Hitachi, Ltd. | Image processing unit |
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