JPS59121822A - 半導体薄膜の製造方法 - Google Patents

半導体薄膜の製造方法

Info

Publication number
JPS59121822A
JPS59121822A JP57227587A JP22758782A JPS59121822A JP S59121822 A JPS59121822 A JP S59121822A JP 57227587 A JP57227587 A JP 57227587A JP 22758782 A JP22758782 A JP 22758782A JP S59121822 A JPS59121822 A JP S59121822A
Authority
JP
Japan
Prior art keywords
laser beam
recrystallization
film
thin film
end parts
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57227587A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6320012B2 (enExample
Inventor
Hisaaki Aizaki
尚昭 相崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP57227587A priority Critical patent/JPS59121822A/ja
Publication of JPS59121822A publication Critical patent/JPS59121822A/ja
Publication of JPS6320012B2 publication Critical patent/JPS6320012B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/3814—Continuous wave laser beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3238—Materials thereof being insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3458—Monocrystalline
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/381—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/382—Scanning of a beam

Landscapes

  • Recrystallisation Techniques (AREA)
JP57227587A 1982-12-28 1982-12-28 半導体薄膜の製造方法 Granted JPS59121822A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57227587A JPS59121822A (ja) 1982-12-28 1982-12-28 半導体薄膜の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57227587A JPS59121822A (ja) 1982-12-28 1982-12-28 半導体薄膜の製造方法

Publications (2)

Publication Number Publication Date
JPS59121822A true JPS59121822A (ja) 1984-07-14
JPS6320012B2 JPS6320012B2 (enExample) 1988-04-26

Family

ID=16863251

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57227587A Granted JPS59121822A (ja) 1982-12-28 1982-12-28 半導体薄膜の製造方法

Country Status (1)

Country Link
JP (1) JPS59121822A (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6319809A (ja) * 1986-07-14 1988-01-27 Agency Of Ind Science & Technol レ−ザビ−ムアニ−ル装置
US4888302A (en) * 1987-11-25 1989-12-19 North American Philips Corporation Method of reduced stress recrystallization
US5529951A (en) * 1993-11-02 1996-06-25 Sony Corporation Method of forming polycrystalline silicon layer on substrate by large area excimer laser irradiation
JP2002158184A (ja) * 2000-11-16 2002-05-31 Mitsubishi Electric Corp レーザ熱処理用のレーザ光学系
JP2008252064A (ja) * 2007-03-05 2008-10-16 Ulvac Japan Ltd レーザーアニール装置及びレーザーアニール方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6319809A (ja) * 1986-07-14 1988-01-27 Agency Of Ind Science & Technol レ−ザビ−ムアニ−ル装置
US4888302A (en) * 1987-11-25 1989-12-19 North American Philips Corporation Method of reduced stress recrystallization
US5529951A (en) * 1993-11-02 1996-06-25 Sony Corporation Method of forming polycrystalline silicon layer on substrate by large area excimer laser irradiation
JP2002158184A (ja) * 2000-11-16 2002-05-31 Mitsubishi Electric Corp レーザ熱処理用のレーザ光学系
JP2008252064A (ja) * 2007-03-05 2008-10-16 Ulvac Japan Ltd レーザーアニール装置及びレーザーアニール方法

Also Published As

Publication number Publication date
JPS6320012B2 (enExample) 1988-04-26

Similar Documents

Publication Publication Date Title
JPH0454370B2 (enExample)
JPS62104117A (ja) 半導体薄膜の製造方法
JPH03244136A (ja) 薄膜トランジスタの製造方法
JPS59161014A (ja) 半導体薄膜結晶化方法
JPH0343769B2 (enExample)
JPS6320012B2 (enExample)
JPS6362089B2 (enExample)
JPS60143624A (ja) 半導体装置の製造方法
JP4293414B2 (ja) 半導体膜の結晶化方法及びそれを用いた半導体装置の作製方法
JPS5892213A (ja) 半導体単結晶膜の製造方法
JPS59224114A (ja) 単結晶半導体薄膜の製造方法
JPH11251241A (ja) 結晶質珪素層の製造方法、太陽電池の製造方法及び薄膜トランジスタの製造方法
JPH01200615A (ja) 薄い単結晶半導体材料層を絶縁体に形成する方法
JP4524413B2 (ja) 結晶化方法
JPS5878454A (ja) 半導体装置の製造方法
JPH0335551A (ja) 半導体膜及びその形成方法
JPS5961117A (ja) 半導体装置の製造方法
JP2005005448A (ja) 多結晶半導体薄膜の製造方法
JPS62219510A (ja) 単結晶島状領域の形成方法
JPS62130510A (ja) 半導体基体の製造方法
JPS58165316A (ja) 半導体装置の製造方法
JPS62245621A (ja) Ｓｏｉデバイス形成法
JP2010114472A (ja) 結晶化方法
JPH03138925A (ja) 半導体膜の結晶化法
JPH0670964B2 (ja) 半導体装置の製造方法