JPS59121190A - 帯状シリコン結晶製造装置 - Google Patents

帯状シリコン結晶製造装置

Info

Publication number
JPS59121190A
JPS59121190A JP23282082A JP23282082A JPS59121190A JP S59121190 A JPS59121190 A JP S59121190A JP 23282082 A JP23282082 A JP 23282082A JP 23282082 A JP23282082 A JP 23282082A JP S59121190 A JPS59121190 A JP S59121190A
Authority
JP
Japan
Prior art keywords
crystal
band
shaped silicon
melt
shaped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP23282082A
Other languages
English (en)
Japanese (ja)
Other versions
JPS618040B2 (enExample
Inventor
Koji Nakagawa
中川　公史
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP23282082A priority Critical patent/JPS59121190A/ja
Publication of JPS59121190A publication Critical patent/JPS59121190A/ja
Publication of JPS618040B2 publication Critical patent/JPS618040B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34—Edge-defined film-fed crystal-growth using dies or slits

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP23282082A 1982-12-25 1982-12-25 帯状シリコン結晶製造装置 Granted JPS59121190A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23282082A JPS59121190A (ja) 1982-12-25 1982-12-25 帯状シリコン結晶製造装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23282082A JPS59121190A (ja) 1982-12-25 1982-12-25 帯状シリコン結晶製造装置

Publications (2)

Publication Number Publication Date
JPS59121190A true JPS59121190A (ja) 1984-07-13
JPS618040B2 JPS618040B2 (enExample) 1986-03-11

Family

ID=16945286

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23282082A Granted JPS59121190A (ja) 1982-12-25 1982-12-25 帯状シリコン結晶製造装置

Country Status (1)

Country Link
JP (1) JPS59121190A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0398863U (enExample) * 1990-01-30 1991-10-15

Also Published As

Publication number Publication date
JPS618040B2 (enExample) 1986-03-11

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