JPS59117187A - 光分岐用半導体レ−ザ - Google Patents

光分岐用半導体レ−ザ

Info

Publication number
JPS59117187A
JPS59117187A JP23392482A JP23392482A JPS59117187A JP S59117187 A JPS59117187 A JP S59117187A JP 23392482 A JP23392482 A JP 23392482A JP 23392482 A JP23392482 A JP 23392482A JP S59117187 A JPS59117187 A JP S59117187A
Authority
JP
Japan
Prior art keywords
junction
light
laser
layer
semiconductor laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP23392482A
Other languages
English (en)
Japanese (ja)
Other versions
JPH041517B2 (https=
Inventor
Akira Fujimoto
晶 藤本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Omron Corp
Original Assignee
Tateisi Electronics Co
Omron Tateisi Electronics Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tateisi Electronics Co, Omron Tateisi Electronics Co filed Critical Tateisi Electronics Co
Priority to JP23392482A priority Critical patent/JPS59117187A/ja
Priority to GB08321788A priority patent/GB2127218B/en
Priority to DE19833329467 priority patent/DE3329467A1/de
Priority to DE19833348097 priority patent/DE3348097C2/de
Publication of JPS59117187A publication Critical patent/JPS59117187A/ja
Publication of JPH041517B2 publication Critical patent/JPH041517B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2238—Buried stripe structure with a terraced structure

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP23392482A 1982-08-16 1982-12-23 光分岐用半導体レ−ザ Granted JPS59117187A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP23392482A JPS59117187A (ja) 1982-12-23 1982-12-23 光分岐用半導体レ−ザ
GB08321788A GB2127218B (en) 1982-08-16 1983-08-12 Semiconductor laser
DE19833329467 DE3329467A1 (de) 1982-08-16 1983-08-16 Halbleiterlaser
DE19833348097 DE3348097C2 (https=) 1982-08-16 1983-08-16

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23392482A JPS59117187A (ja) 1982-12-23 1982-12-23 光分岐用半導体レ−ザ

Publications (2)

Publication Number Publication Date
JPS59117187A true JPS59117187A (ja) 1984-07-06
JPH041517B2 JPH041517B2 (https=) 1992-01-13

Family

ID=16962730

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23392482A Granted JPS59117187A (ja) 1982-08-16 1982-12-23 光分岐用半導体レ−ザ

Country Status (1)

Country Link
JP (1) JPS59117187A (https=)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55115388A (en) * 1979-02-26 1980-09-05 Mitsubishi Electric Corp Manufacture of semiconductor laser device
JPS55132091A (en) * 1979-04-02 1980-10-14 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser array

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55115388A (en) * 1979-02-26 1980-09-05 Mitsubishi Electric Corp Manufacture of semiconductor laser device
JPS55132091A (en) * 1979-04-02 1980-10-14 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser array

Also Published As

Publication number Publication date
JPH041517B2 (https=) 1992-01-13

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